JP2016213456A - 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法 - Google Patents
背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法 Download PDFInfo
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- JP2016213456A JP2016213456A JP2016092266A JP2016092266A JP2016213456A JP 2016213456 A JP2016213456 A JP 2016213456A JP 2016092266 A JP2016092266 A JP 2016092266A JP 2016092266 A JP2016092266 A JP 2016092266A JP 2016213456 A JP2016213456 A JP 2016213456A
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- 239000000758 substrate Substances 0.000 title claims abstract description 141
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000012545 processing Methods 0.000 claims abstract description 118
- 239000004065 semiconductor Substances 0.000 claims abstract description 95
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 10
- 238000004891 communication Methods 0.000 claims abstract description 9
- 239000012530 fluid Substances 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000000919 ceramic Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 17
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- 238000000231 atomic layer deposition Methods 0.000 claims description 9
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- 238000010926 purge Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
さらに、本明細書には、半導体基板処理装置の基板ペデスタルモジュールを製造する方法が開示されている。基板ペデスタルモジュールを製造する方法は、上側ガス管フランジの上側セラミック面をプラテンの下側セラミック面に対して位置決めする工程と、上側ガス管フランジの上側セラミック面をプラテンの下側セラミック面に拡散結合させて、真空シールを形成する工程と、を備える。
Claims (20)
- 半導体基板を処理するための半導体基板処理装置であって、
半導体基板が処理されうる処理領域を備えた真空チャンバと、
処理ガスを前記真空チャンバ内に供給するために前記真空チャンバと流体連通する処理ガス源と、
前記処理ガス源から前記真空チャンバの前記処理領域に供給される処理ガスが通るシャワーヘッドモジュールと、
処理中に半導体基板を上に支持するよう構成された上面を有するセラミック材料製のプラテン、前記プラテンを支持する上側ステムフランジを有するセラミック材料製のステム、および、前記ステムの内部に配置されたセラミック材料製の背面ガス管、を備えた基板ペデスタルモジュールであって、前記背面ガス管は、前記プラテンの下面と前記上側ステムフランジの上面との間に配置された上側ガス管フランジを備え、前記プラテンの少なくとも1つの背面ガス通路と流体連通しており、処理中に前記プラテンの前記上面に支持される半導体基板の下面の下方の領域に背面ガスを供給するよう構成されている、基板ペデスタルモジュールと、
を備える、半導体基板処理装置。 - 請求項1に記載の半導体基板処理装置であって、前記半導体基板処理装置は、
(a)前記処理領域内で前記処理ガスをプラズマ状態に励起するよう適合されたRFエネルギ源、
(b)前記半導体基板処理装置によって実行される処理を制御するよう構成された制御システム、および/または、
(c)前記半導体基板処理装置の制御のためのプログラム命令を備えた非一時的なコンピュータマシン読み取り可能媒体、を備える、半導体基板処理装置。 - 請求項1に記載の半導体基板処理装置であって、前記ステムの前記内部と前記真空チャンバとの間に真空シールを形成するために、前記上側ガス管フランジの上面が前記プラテンの下面に拡散結合され、前記上側ガス管フランジの下面が前記上側ステムフランジの上面に拡散結合されている、半導体基板処理装置。
- 請求項1に記載の半導体基板処理装置であって、前記上側ガス管フランジの前記上面と前記プラテンの前記下面との間の接触面積は、前記上側ガス管フランジの前記下面と前記上側ステムフランジの前記上面との間の接触面積とほぼ等しい、半導体基板処理装置。
- 請求項1に記載の半導体基板処理装置であって、前記ガス管フランジの一部と前記プラテンの前記下面との間にギャップが形成されている、または、前記上側ガス管フランジの前記上面と前記プラテンの前記下面との間にギャップがない、半導体基板処理装置。
- 請求項1に記載の半導体基板処理装置であって、
(a)前記背面ガス管、前記プラテン、および/または、前記ステムは、窒化アルミニウムで形成されている、
(b)前記背面ガス管は、少なくとも1つのそれぞれの電気接続が前記上側ガス管フランジを通して伸びることができるように、前記上側ガス管フランジに少なくとも1つの開口部を備えている、
(c)前記背面ガス管は、前記ステムの前記内部の中で中心に配置されるか、または、前記背面ガス管は、前記ステムの前記内部の中で中心を外れて配置されている、および/または、
(d)前記半導体基板処理装置は、化学蒸着装置、プラズマ強化化学蒸着装置、原子層蒸着装置、プラズマ強化原子層蒸着装置、パルス蒸着層装置、または、プラズマ強化パルス蒸着層装置である、半導体基板処理装置。 - 請求項1に記載の半導体基板処理装置であって、前記基板ペデスタルモジュールは、さらに、
(a)前記プラテンに埋め込まれた少なくとも1つの静電ランプ電極、
(b)前記プラテンに埋め込まれた下側RF電極、
(c)前記プラテンに埋め込まれた少なくとも1つのヒータ、
(d)前記プラテンの前記上面に対して半導体基板を上下させるよう構成された複数のリフトピン、
(e)前記プラテンの前記上面に形成されたメサパターン、
(f)前記プラテンの前記上面に対して半導体基板を上下させるよう構成されたキャリヤリング、または、
(g)静電クランプ電極およびRF電極として機能するよう動作可能な埋め込みの単一電極、を備える、半導体基板処理装置。 - 請求項1に記載の半導体基板処理装置であって、さらに、背面ガスが、処理中に前記プラテンの前記上面に支持される半導体基板の下面の下方の前記領域に供給されうるように、前記プラテンの前記少なくとも1つの背面ガス通路と流体連通する前記背面ガス管を通して背面ガスを供給するよう動作可能な背面ガス供給部を備える、半導体基板処理装置。
- 請求項1に記載の半導体基板処理装置であって、前記上側ガス管フランジの外周は、前記プラテンの外径の1/4以下の半径上に位置する、半導体基板処理装置。
- 半導体基板処理装置の基板ペデスタルモジュールであって、前記基板ペデスタルモジュールは、
処理中に半導体基板を上に支持するよう構成された上面を有するセラミック材料製のプラテンと、
前記プラテンを支持する上側ステムフランジを有するセラミック材料製のステムと、
前記ステムの内部に配置されたセラミック材料製の背面ガス管であって、前記背面ガス管は、前記プラテンの下面と前記上側ステムフランジの上面との間に配置された上側ガス管フランジを備え、前記プラテンの少なくとも1つの背面ガス通路と流体連通しており、処理中に前記プラテンの前記上面上に支持される半導体基板の下面の下方の領域に背面ガスを供給するよう構成されている、背面ガス管と、
を備える、基板ペデスタルモジュール。 - 請求項10に記載の半導体基板処理装置であって、真空シールを形成するために、前記上側ガス管フランジの上面が前記プラテンの下面に拡散結合され、前記上側ガス管フランジの下面が前記上側ステムフランジの上面に拡散結合されている、半導体基板処理装置。
- 請求項11に記載の半導体基板処理装置であって、前記上側ガス管フランジの前記上面と前記プラテンの前記下面との間の接触面積は、前記上側ガス管フランジの前記下面と前記上側ステムフランジの前記上面との間の接触面積とほぼ等しい、半導体基板処理装置。
- 請求項10に記載の半導体基板処理装置であって、前記上側ガス管フランジの一部と前記プラテンの前記下面との間にギャップが形成されている、または、前記上側ガス管フランジの前記上面と前記プラテンの前記下面との間にギャップがない、半導体基板処理装置。
- 請求項10に記載の半導体基板処理装置であって、
(a)前記背面ガス管、前記プラテン、および/または、前記ステムは、窒化アルミニウムで形成されている、
(b)前記背面ガス管は、少なくとも1つのそれぞれの電気接続が前記上側ガス管フランジを通して伸びることができるように、前記上側ガス管フランジに少なくとも1つの開口部を備えている、および/または、
(c)前記背面ガス管は、前記ステムの前記内部の中で中心に配置されるか、または、前記背面ガス管は、前記ステムの前記内部の中で中心を外れて配置されている、半導体基板処理装置。 - 請求項10に記載の半導体基板処理装置であって、前記基板ペデスタルモジュールは、さらに、
(a)前記プラテンに埋め込まれた少なくとも1つの静電ランプ電極、
(b)前記プラテンに埋め込まれた下側RF電極、
(c)前記プラテンに埋め込まれた少なくとも1つのヒータ、
(d)前記プラテンの前記上面に対して半導体基板を上下させるよう構成された複数のリフトピン、
(e)前記プラテンの前記上面に形成されたメサパターン、
(f)前記プラテンの前記上面に対して半導体基板を上下させるよう構成されたキャリヤリング、または、
(g)静電クランプ電極およびRF電極として機能するよう動作可能な埋め込みの単一電極、を備える、半導体基板処理装置。 - 半導体基板処理装置の基板ペデスタルモジュールを製造する方法であって、
上側ガス管フランジの上側セラミック面をプラテンの下側セラミック面に対して位置決めする工程と、
前記上側ガス管フランジの前記上側セラミック面を前記プラテンの前記下側セラミック面に拡散結合させて、真空シールを形成する工程と、
を備える、方法。 - 請求項16に記載の方法であって、さらに、
上側ステムフランジの上側セラミック面を前記上側ガス管フランジの下側セラミック面に対して位置決めする工程と、
前記上側ガス管フランジの前記上側セラミック面を前記プラテンの前記下側セラミック面に、かつ、前記上側ステムフランジの前記上側セラミック面を前記上側ガス管フランジの前記下側セラミック面に、同時に拡散接合させて、真空シールを形成する工程、または、前記上側ガス管フランジの前記上側セラミック面が前記プラテンの前記下側セラミック面に拡散接合された後に、前記上側ステムフランジの前記上側セラミック面を前記上側ガス管フランジの前記下側セラミック面に拡散接合させて、真空シールを形成する工程と、
を備える、方法。 - 請求項1に記載の半導体基板処理装置で半導体基板を処理する方法であって、
前記処理ガス源から前記処理領域に前記処理ガスを供給する工程と、
前記プラテンの前記上面に支持された半導体基板を処理する工程と、
を備える、方法。 - 請求項18に記載の方法であって、さらに、処理集中に、前記背面ガス管を通して、前記プラテンの前記上面に支持された半導体基板の下面の下方の領域に、背面熱伝導ガスまたはパージガスを供給する工程を備える、方法。
- 請求項18に記載の方法であって、前記処理は、化学蒸着、プラズマ強化化学蒸着、原子層蒸着、プラズマ強化原子層蒸着、パルス蒸着層、および/または、プラズマ強化パルス蒸着層の内の少なくとも1つである、方法。
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JP7168642B2 (ja) | 2022-11-09 |
CN112063995A (zh) | 2020-12-11 |
KR20160133373A (ko) | 2016-11-22 |
JP6815745B2 (ja) | 2021-01-20 |
JP2021061422A (ja) | 2021-04-15 |
US20170321324A1 (en) | 2017-11-09 |
CN112063995B (zh) | 2023-06-27 |
US10655225B2 (en) | 2020-05-19 |
US20160333475A1 (en) | 2016-11-17 |
US20230220549A1 (en) | 2023-07-13 |
CN106148915A (zh) | 2016-11-23 |
US9738975B2 (en) | 2017-08-22 |
CN106148915B (zh) | 2020-08-21 |
KR20240031982A (ko) | 2024-03-08 |
US11634817B2 (en) | 2023-04-25 |
KR102641003B1 (ko) | 2024-02-23 |
US20200325578A1 (en) | 2020-10-15 |
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