JP2016186835A - メモリ書込みエラー訂正回路 - Google Patents
メモリ書込みエラー訂正回路 Download PDFInfo
- Publication number
- JP2016186835A JP2016186835A JP2016116969A JP2016116969A JP2016186835A JP 2016186835 A JP2016186835 A JP 2016186835A JP 2016116969 A JP2016116969 A JP 2016116969A JP 2016116969 A JP2016116969 A JP 2016116969A JP 2016186835 A JP2016186835 A JP 2016186835A
- Authority
- JP
- Japan
- Prior art keywords
- data
- memory
- write
- memory cell
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012937 correction Methods 0.000 title abstract description 4
- 230000005291 magnetic effect Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- 230000002457 bidirectional effect Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 17
- 230000005415 magnetization Effects 0.000 description 14
- 230000006399 behavior Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 230000002950 deficient Effects 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 208000017972 multifocal atrial tachycardia Diseases 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000408659 Darpa Species 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001080 multi-layer soft lithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1677—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5647—Multilevel memory with bit inversion arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Detection And Correction Of Errors (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
本出願は、参照によりその内容が全体として本明細書に組み込まれている、2010年11月18日に出願した「Memory Write Error Correction System」という名称の米国仮出願第61/415239号の35USC119(e)の下での優先権を主張するものである。
本発明は、DARPAによって与えられた付与/契約番号HR0011-09-C-0023の下で米国政府の支援によって行われた。米国政府は、この発明における一定の権利を保有する。
前記データビットの前記アドレスを前記アドレス指定回路にラッチすること、
前記データビットを前記データ入力出力回路にラッチすること、
前記データビットを前記データビットの前記アドレスにおいて前記メモリアレイに書き込むこと、
前記データビットの前記アドレスにおいて前記メモリアレイからデータアウトビットを読み出すこと、
前記データビットがデータアウトビットに等しいかどうか判定するために前記データビットを前記データアウトビットと比較すること、
前記比較するステップが、前記データビットが前記データアウトビットに等しくないと判定した場合は、前記データビットの前記アドレスを前記書込みエラーアドレスタグメモリに書き込むこと、および前記比較するステップが、前記データビットが前記データアウトビットに等しいと判定した場合は、前記データビットの前記アドレスを前記書込みエラーアドレスタグメモリに書き込まないこと。
前記データビットの前記アドレスを前記書込みエラーアドレスタグメモリから前記アドレス指定回路にロードすること、
前記データビットの前記アドレスにおいて前記メモリアレイ内のデータアウトビットを読み出すこと、
前記隠し読出し比較回路内の前記データアウトビットを反転すること、および
前記反転されたデータアウトビットを前記データビットの前記アドレスにおいて前記メモリアレイに書き込むこと。
12 基準層
14 トンネル層
16 自由層
20 トランジスタ
30 STT(スピントランスファートルク)-MRAMセル
100 メモリシステム
102 メモリアレイ、メモリアレイタイル(MAT)
104 ローカル列選択回路(LCS)
110 行デコーダ
120 列デコーダ
132 アドレスバッファおよびラッチ
134 プリデコード
140 制御ロジック
150 検知および書込みドライバ
160 隠し書込み比較
165 エラーフラグ
170 書込みエラーアドレスタグメモリ
180 データ入力出力
182 入力バッファデータインラッチ
184 データアウトラッチ出力バッファ
210 ソース線
212 ビット線
215 列選択
220 MSL線
230 MBL線
235 プリチャージ
240 イネーブル読出し信号
245 検知増幅器
250 書込みドライバ
255 検知回路
260 イネーブル書込み(ENW)信号
270 マルチプレクサ
275 排他的論理和またはXOR
280 データ書込み
285 データ読出し線
290 再書込み(REW)信号
351 インバータドライバ
352 インバータドライバ
Claims (10)
- メモリセルに記憶されるように適応された第1のデータを前記メモリセルに予め記憶されている第2のデータと比較するように構成された比較ブロックを備えるメモリ回路であって、前記比較ブロックが、前記第2のデータが前記第1のデータに一致しない場合は前記第2のデータが記憶される前記メモリセルのアドレスを記憶するようにさらに構成され、前記第2のデータが前記第1のデータに一致しなかった後に、前記メモリセルが次に続く書込みサイクル中に書き込まれる、
前記第2のデータが前記第1のデータに一致しない場合の書込みサイクルの時間は、前記第2のデータが前記第1のデータに一致する場合の書込みサイクルの時間と同一である、メモリ回路。 - 前記アドレスがタグメモリに記憶される、請求項1に記載のメモリ回路。
- メモリアレイと、
前記メモリアレイと前記比較ブロックとの間に結合された書込みブロックと、
前記メモリアレイと前記比較ブロックとの間に結合され、前記第2のデータを検知するように適応された読出しブロックと
をさらに備える、請求項1に記載のメモリ回路。 - 前記メモリ回路への外部のデバイスによる通常の書込み動作のために前記メモリセルがアクセスされていないときに反転された前記第2のデータを前記メモリセルに記憶するように構成された制御ロジックをさらに備える、請求項1に記載のメモリ回路。
- 前記メモリセルがDRAM、SRAM、ROM、PROM、EEPROM、フラッシュ、FeRAM、PRAM、MRAMまたはSTT-MRAMのセルである、請求項1に記載のメモリ回路。
- 前記メモリアレイが複数の前記メモリセルに結合された少なくとも1つの列を備え、前記列が第1の信号線および第2の信号線を備え、前記メモリセルが、前記第1の信号線に結合された第1の電流搬送端子と、前記第2の信号線に結合された第2の電流搬送端子と、ワード線に結合された制御端子とを備える、請求項3に記載のメモリ回路。
- 前記メモリセルが、
前記メモリセルの前記第1の電流搬送端子に結合された第1の端子を有する磁気トンネル接合、および
前記メモリセルの前記第2の電流搬送端子に結合された第1の電流搬送端子と、前記メモリセルの前記制御端子に結合されたゲート端子と、前記磁気トンネル接合の第2の端子に結合された第2の電流搬送端子とを有する第1のトランジスタ
をさらに備える、請求項6に記載のメモリ回路。 - メモリ回路における書込み動作中に書込みエラーを訂正する方法であって、
書込み動作中に、メモリセルに記憶されるように適応された第1のデータを前記メモリセルに予め記憶されている第2のデータと比較するステップと、
前記第2のデータが前記第1のデータに一致しない場合は前記第2のデータが記憶される前記メモリセルのアドレスを記憶するステップと、
前記書込みエラーを訂正するために次に続く書込みサイクル中に前記メモリセルに書き込むステップと
を備え、
前記第2のデータが前記第1のデータに一致しない場合の書込みサイクルの時間は、前記第2のデータが前記第1のデータに一致する場合の書込みサイクルの時間と同一である、る方法。 - 前記メモリセルの前記アドレスをラッチするステップと、
前記第1のデータをラッチするステップと、
前記メモリセルの前記アドレスにおいて前記第1のデータをメモリアレイに書き込むステップと、
前記書込み動作中に前記第2のデータを検知するステップと
をさらに備える、請求項8に記載の方法。 - メモリ回路における書込み動作後に書込みエラーを訂正する方法であって、
書込み動作後に、メモリセルに予め記憶されている第2のデータが前記メモリセルに記憶されるように適応された第1のデータに一致しない場合は第2のデータが記憶されるメモリセルのアドレスをロードするステップと、
前記第2のデータを検知するステップと、
前記第2のデータを反転するステップと、
前記書込みエラーを訂正するために、前記反転された第2のデータを前記第2のデータが記憶されている前記メモリセルのアドレスに書き込むステップと
を備え、
前記第2のデータが前記第1のデータに一致しない場合の書込みサイクルの時間は、前記第2のデータが前記第1のデータに一致する場合の書込みサイクルの時間と同一である、る方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41523910P | 2010-11-18 | 2010-11-18 | |
US61/415,239 | 2010-11-18 | ||
US13/013,616 | 2011-01-25 | ||
US13/013,616 US8456926B2 (en) | 2010-11-18 | 2011-01-25 | Memory write error correction circuit |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011251457A Division JP5990859B2 (ja) | 2010-11-18 | 2011-11-17 | メモリ書込みエラー訂正回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016186835A true JP2016186835A (ja) | 2016-10-27 |
JP6203905B2 JP6203905B2 (ja) | 2017-09-27 |
Family
ID=45094443
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011251457A Active JP5990859B2 (ja) | 2010-11-18 | 2011-11-17 | メモリ書込みエラー訂正回路 |
JP2016116969A Active JP6203905B2 (ja) | 2010-11-18 | 2016-06-13 | メモリ書込みエラー訂正回路 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011251457A Active JP5990859B2 (ja) | 2010-11-18 | 2011-11-17 | メモリ書込みエラー訂正回路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8456926B2 (ja) |
EP (1) | EP2455942B1 (ja) |
JP (2) | JP5990859B2 (ja) |
KR (1) | KR101863552B1 (ja) |
CN (1) | CN102467976B (ja) |
TW (1) | TWI489472B (ja) |
Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8456926B2 (en) * | 2010-11-18 | 2013-06-04 | Grandis, Inc. | Memory write error correction circuit |
JP6192256B2 (ja) * | 2010-10-12 | 2017-09-06 | サムスン セミコンダクター,インコーポレーテッド | 疑似ページモードのメモリアーキテクチャおよび方法 |
JP5112566B1 (ja) * | 2011-12-16 | 2013-01-09 | 株式会社東芝 | 半導体記憶装置、不揮発性半導体メモリの検査方法、及びプログラム |
US9069719B2 (en) * | 2012-02-11 | 2015-06-30 | Samsung Electronics Co., Ltd. | Method and system for providing a smart memory architecture |
US9679664B2 (en) * | 2012-02-11 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method and system for providing a smart memory architecture |
US8839073B2 (en) | 2012-05-04 | 2014-09-16 | Lsi Corporation | Zero-one balance management in a solid-state disk controller |
US20140026003A1 (en) * | 2012-07-23 | 2014-01-23 | Zhengang Chen | Flash memory read error rate reduction |
US9443615B2 (en) | 2012-12-04 | 2016-09-13 | Micron Technology, Inc. | Methods and apparatuses for memory testing with data compression |
KR101991900B1 (ko) * | 2013-03-13 | 2019-06-24 | 삼성전자주식회사 | 메모리 장치의 동작 방법, 이를 이용한 메모리 장치 및 이를 포함하는 메모리 시스템 |
KR102168096B1 (ko) | 2013-03-15 | 2020-10-20 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 데이터 쓰기 방법 |
KR101456104B1 (ko) * | 2013-04-04 | 2014-11-04 | 이화여자대학교 산학협력단 | 비휘발성 메모리를 위한 듀얼 버퍼링 파일 관리 방법, 파일 관리 시스템 및 대용량 저장 장치 |
KR102131746B1 (ko) | 2013-09-27 | 2020-07-08 | 인텔 코포레이션 | Stt-mram 사이즈와 쓰기 오류율을 최적화하기 위한 장치 및 방법 |
US9478273B2 (en) | 2013-10-31 | 2016-10-25 | Intel Corporation | Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory |
US9418721B2 (en) | 2014-01-21 | 2016-08-16 | International Business Machines Corporation | Determining and storing bit error rate relationships in spin transfer torque magnetoresistive random-access memory (STT-MRAM) |
US9406368B2 (en) | 2014-01-21 | 2016-08-02 | International Business Machines Corporation | Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM) |
WO2015167509A1 (en) * | 2014-04-30 | 2015-11-05 | Empire Technology Development Llc | Differential writing for life extension of portions of a memory device |
US10115446B1 (en) | 2015-04-21 | 2018-10-30 | Spin Transfer Technologies, Inc. | Spin transfer torque MRAM device with error buffer |
US10147500B2 (en) * | 2015-05-22 | 2018-12-04 | SK Hynix Inc. | Hybrid read disturb count management |
US9514796B1 (en) * | 2015-06-26 | 2016-12-06 | Intel Corporation | Magnetic storage cell memory with back hop-prevention |
KR102258905B1 (ko) * | 2015-07-02 | 2021-05-31 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 동작 방법 |
US10163479B2 (en) | 2015-08-14 | 2018-12-25 | Spin Transfer Technologies, Inc. | Method and apparatus for bipolar memory write-verify |
KR20170023249A (ko) * | 2015-08-19 | 2017-03-03 | 에스케이하이닉스 주식회사 | 메모리 장치 및 메모리 장치의 동작 방법 |
US10303536B2 (en) * | 2015-10-28 | 2019-05-28 | Via Technologies, Inc. | Non-volatile memory device and control method thereof |
US10388393B2 (en) * | 2016-03-22 | 2019-08-20 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
US11074988B2 (en) | 2016-03-22 | 2021-07-27 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
US10192602B2 (en) | 2016-09-27 | 2019-01-29 | Spin Transfer Technologies, Inc. | Smart cache design to prevent overflow for a memory device with a dynamic redundancy register |
US10628316B2 (en) | 2016-09-27 | 2020-04-21 | Spin Memory, Inc. | Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register |
US10437491B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register |
US10990465B2 (en) | 2016-09-27 | 2021-04-27 | Spin Memory, Inc. | MRAM noise mitigation for background operations by delaying verify timing |
US10546625B2 (en) | 2016-09-27 | 2020-01-28 | Spin Memory, Inc. | Method of optimizing write voltage based on error buffer occupancy |
US10991410B2 (en) | 2016-09-27 | 2021-04-27 | Spin Memory, Inc. | Bi-polar write scheme |
US10437723B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device |
US10360964B2 (en) | 2016-09-27 | 2019-07-23 | Spin Memory, Inc. | Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device |
US11151042B2 (en) * | 2016-09-27 | 2021-10-19 | Integrated Silicon Solution, (Cayman) Inc. | Error cache segmentation for power reduction |
US10366774B2 (en) * | 2016-09-27 | 2019-07-30 | Spin Memory, Inc. | Device with dynamic redundancy registers |
US11119910B2 (en) | 2016-09-27 | 2021-09-14 | Spin Memory, Inc. | Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments |
US11048633B2 (en) | 2016-09-27 | 2021-06-29 | Spin Memory, Inc. | Determining an inactive memory bank during an idle memory cycle to prevent error cache overflow |
US10192601B2 (en) | 2016-09-27 | 2019-01-29 | Spin Transfer Technologies, Inc. | Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registers |
US11386010B2 (en) | 2016-09-27 | 2022-07-12 | Integrated Silicon Solution, (Cayman) Inc. | Circuit engine for managing memory meta-stability |
US11010294B2 (en) | 2016-09-27 | 2021-05-18 | Spin Memory, Inc. | MRAM noise mitigation for write operations with simultaneous background operations |
US10446210B2 (en) | 2016-09-27 | 2019-10-15 | Spin Memory, Inc. | Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers |
US10460781B2 (en) | 2016-09-27 | 2019-10-29 | Spin Memory, Inc. | Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank |
US11119936B2 (en) | 2016-09-27 | 2021-09-14 | Spin Memory, Inc. | Error cache system with coarse and fine segments for power optimization |
US10818331B2 (en) | 2016-09-27 | 2020-10-27 | Spin Memory, Inc. | Multi-chip module for MRAM devices with levels of dynamic redundancy registers |
KR20180063475A (ko) * | 2016-12-02 | 2018-06-12 | 삼성전자주식회사 | 반도체 장치의 오류 검출 코드 생성 회로, 이를 포함하는 메모리 컨트롤러 및 반도체 메모리 장치 |
KR101933300B1 (ko) * | 2017-03-17 | 2019-03-15 | 한양대학교 산학협력단 | Stt-mram 불량 주소 우회 회로 및 이를 포함하는 stt-mram 디바이스 |
US10074436B1 (en) * | 2017-06-13 | 2018-09-11 | Winbound Electronics Corp. | Memory device and data reading method thereof |
US10481976B2 (en) | 2017-10-24 | 2019-11-19 | Spin Memory, Inc. | Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers |
US10529439B2 (en) | 2017-10-24 | 2020-01-07 | Spin Memory, Inc. | On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects |
US10489245B2 (en) | 2017-10-24 | 2019-11-26 | Spin Memory, Inc. | Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them |
US10656994B2 (en) | 2017-10-24 | 2020-05-19 | Spin Memory, Inc. | Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques |
WO2019133223A1 (en) * | 2017-12-27 | 2019-07-04 | Spin Transfer Technologies, Inc. | A method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device |
US10395712B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Memory array with horizontal source line and sacrificial bitline per virtual source |
US10811594B2 (en) | 2017-12-28 | 2020-10-20 | Spin Memory, Inc. | Process for hard mask development for MRAM pillar formation using photolithography |
US10360962B1 (en) | 2017-12-28 | 2019-07-23 | Spin Memory, Inc. | Memory array with individually trimmable sense amplifiers |
US10424726B2 (en) | 2017-12-28 | 2019-09-24 | Spin Memory, Inc. | Process for improving photoresist pillar adhesion during MRAM fabrication |
US10891997B2 (en) | 2017-12-28 | 2021-01-12 | Spin Memory, Inc. | Memory array with horizontal source line and a virtual source line |
US10840436B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture |
US10367139B2 (en) | 2017-12-29 | 2019-07-30 | Spin Memory, Inc. | Methods of manufacturing magnetic tunnel junction devices |
US10784439B2 (en) | 2017-12-29 | 2020-09-22 | Spin Memory, Inc. | Precessional spin current magnetic tunnel junction devices and methods of manufacture |
US10546624B2 (en) | 2017-12-29 | 2020-01-28 | Spin Memory, Inc. | Multi-port random access memory |
US10886330B2 (en) | 2017-12-29 | 2021-01-05 | Spin Memory, Inc. | Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch |
US10424723B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction devices including an optimization layer |
US10840439B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) fabrication methods and systems |
US10438996B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Methods of fabricating magnetic tunnel junctions integrated with selectors |
US10438995B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Devices including magnetic tunnel junctions integrated with selectors |
US10446744B2 (en) | 2018-03-08 | 2019-10-15 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
US11107974B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer |
US10734573B2 (en) | 2018-03-23 | 2020-08-04 | Spin Memory, Inc. | Three-dimensional arrays with magnetic tunnel junction devices including an annular discontinued free magnetic layer and a planar reference magnetic layer |
US11107978B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US10784437B2 (en) | 2018-03-23 | 2020-09-22 | Spin Memory, Inc. | Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US10411185B1 (en) | 2018-05-30 | 2019-09-10 | Spin Memory, Inc. | Process for creating a high density magnetic tunnel junction array test platform |
US10593396B2 (en) | 2018-07-06 | 2020-03-17 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10600478B2 (en) | 2018-07-06 | 2020-03-24 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10692569B2 (en) | 2018-07-06 | 2020-06-23 | Spin Memory, Inc. | Read-out techniques for multi-bit cells |
US10559338B2 (en) | 2018-07-06 | 2020-02-11 | Spin Memory, Inc. | Multi-bit cell read-out techniques |
US10650875B2 (en) | 2018-08-21 | 2020-05-12 | Spin Memory, Inc. | System for a wide temperature range nonvolatile memory |
US10699761B2 (en) | 2018-09-18 | 2020-06-30 | Spin Memory, Inc. | Word line decoder memory architecture |
US10971680B2 (en) | 2018-10-01 | 2021-04-06 | Spin Memory, Inc. | Multi terminal device stack formation methods |
US11621293B2 (en) | 2018-10-01 | 2023-04-04 | Integrated Silicon Solution, (Cayman) Inc. | Multi terminal device stack systems and methods |
AU2019374743B2 (en) | 2018-11-08 | 2022-03-03 | Neovasc Tiara Inc. | Ventricular deployment of a transcatheter mitral valve prosthesis |
US11107979B2 (en) | 2018-12-28 | 2021-08-31 | Spin Memory, Inc. | Patterned silicide structures and methods of manufacture |
CN109637415A (zh) * | 2018-12-29 | 2019-04-16 | 武汉华星光电技术有限公司 | 扫描信号生成方法、装置及电子设备 |
WO2020167496A1 (en) * | 2019-02-13 | 2020-08-20 | Spin Memory, Inc. | Multi-chip module for mram devices |
KR20200118311A (ko) * | 2019-04-05 | 2020-10-15 | 삼성전자주식회사 | 데이터를 스왑하기 위한 메모리 장치 및 메모리 장치의 동작 방법 |
KR20200137739A (ko) * | 2019-05-31 | 2020-12-09 | 에스케이하이닉스 주식회사 | 반도체장치 |
US10891999B1 (en) * | 2019-06-19 | 2021-01-12 | Western Digital Technologies, Inc. | Perpendicular SOT MRAM |
CN112131037B (zh) * | 2019-06-24 | 2023-11-14 | 华邦电子股份有限公司 | 存储器装置 |
US11436071B2 (en) | 2019-08-28 | 2022-09-06 | Micron Technology, Inc. | Error control for content-addressable memory |
FR3100346B1 (fr) * | 2019-09-04 | 2022-07-15 | St Microelectronics Rousset | Détection d'erreurs |
US11328752B2 (en) * | 2020-05-20 | 2022-05-10 | Silicon Storage Technology, Inc. | Self-timed sensing architecture for a non-volatile memory system |
JP2024521146A (ja) | 2022-02-24 | 2024-05-28 | チャンシン メモリー テクノロジーズ インコーポレイテッド | データ誤り訂正回路およびデータ伝送回路 |
CN116705122A (zh) * | 2022-02-24 | 2023-09-05 | 长鑫存储技术有限公司 | 数据纠错电路和数据传输电路 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6063800A (ja) * | 1983-09-17 | 1985-04-12 | Toshiba Corp | 半導体メモリ |
JPH0675864A (ja) * | 1992-08-27 | 1994-03-18 | Kofu Nippon Denki Kk | メモリエラー回復方式 |
JP2001052487A (ja) * | 1999-08-06 | 2001-02-23 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2002150795A (ja) * | 2000-11-13 | 2002-05-24 | Nec Microsystems Ltd | 半導体集積回路 |
JP2007334813A (ja) * | 2006-06-19 | 2007-12-27 | Nec Electronics Corp | メモリ制御回路及びデータ書き換え方法 |
JP2008034089A (ja) * | 2006-07-26 | 2008-02-14 | Samsung Electronics Co Ltd | フラッシュメモリ装置と該プログラム方法及びメモリシステム |
JP2010033620A (ja) * | 2006-10-30 | 2010-02-12 | Renesas Technology Corp | 磁性体メモリ |
JP5990859B2 (ja) * | 2010-11-18 | 2016-09-14 | サムスン セミコンダクター,インコーポレーテッド | メモリ書込みエラー訂正回路 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5862891A (ja) | 1981-10-09 | 1983-04-14 | Fujitsu Ltd | メモリ再書込み方式 |
US5526320A (en) * | 1994-12-23 | 1996-06-11 | Micron Technology Inc. | Burst EDO memory device |
US5754567A (en) * | 1996-10-15 | 1998-05-19 | Micron Quantum Devices, Inc. | Write reduction in flash memory systems through ECC usage |
FR2787922B1 (fr) | 1998-12-23 | 2002-06-28 | St Microelectronics Sa | Cellule memoire a programmation unique en technologie cmos |
JP2000268594A (ja) * | 1999-03-16 | 2000-09-29 | Nec Corp | 半導体記憶装置及びそのデータ検査方法 |
US6700827B2 (en) * | 2001-02-08 | 2004-03-02 | Integrated Device Technology, Inc. | Cam circuit with error correction |
US6552928B1 (en) | 2001-02-23 | 2003-04-22 | Read-Rite Corporation | Read-write control circuit for magnetic tunnel junction MRAM |
DE10110469A1 (de) * | 2001-03-05 | 2002-09-26 | Infineon Technologies Ag | Integrierter Speicher und Verfahren zum Testen und Reparieren desselben |
JP2002368196A (ja) | 2001-05-30 | 2002-12-20 | Internatl Business Mach Corp <Ibm> | メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法 |
US6590825B2 (en) | 2001-11-01 | 2003-07-08 | Silicon Storage Technology, Inc. | Non-volatile flash fuse element |
US6512685B1 (en) * | 2002-06-06 | 2003-01-28 | Integrated Device Technology, Inc. | CAM circuit with separate memory and logic operating voltages |
JP4170682B2 (ja) * | 2002-06-18 | 2008-10-22 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
US7506236B2 (en) | 2004-05-28 | 2009-03-17 | International Business Machines Corporation | Techniques for operating semiconductor devices |
JP4920680B2 (ja) * | 2005-05-09 | 2012-04-18 | ストミクロエレクトロニクス・ソシエテ・アノニム | エラー注入によるアタックに対してメモリを保護する装置 |
JP4883982B2 (ja) | 2005-10-19 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
KR100929155B1 (ko) * | 2007-01-25 | 2009-12-01 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 메모리 셀 억세스 방법 |
JP5283845B2 (ja) | 2007-02-07 | 2013-09-04 | 株式会社メガチップス | ビットエラーの予防方法、情報処理装置 |
JP2008198310A (ja) | 2007-02-15 | 2008-08-28 | Megachips Lsi Solutions Inc | ビットエラーの修復方法および情報処理装置 |
US7742329B2 (en) | 2007-03-06 | 2010-06-22 | Qualcomm Incorporated | Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory |
US7770079B2 (en) * | 2007-08-22 | 2010-08-03 | Micron Technology Inc. | Error scanning in flash memory |
JP5233234B2 (ja) * | 2007-10-05 | 2013-07-10 | 富士通株式会社 | 半導体装置およびその製造方法 |
US8057925B2 (en) * | 2008-03-27 | 2011-11-15 | Magic Technologies, Inc. | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same |
TWI366195B (en) * | 2008-05-05 | 2012-06-11 | Etron Technology Inc | A memory testing system and memory module thereof |
TWI473117B (zh) * | 2008-06-04 | 2015-02-11 | A Data Technology Co Ltd | 具資料修正功能之快閃記憶體儲存裝置 |
US7773438B2 (en) * | 2008-06-06 | 2010-08-10 | Qimonda North America Corp. | Integrated circuit that stores first and second defective memory cell addresses |
US8904083B2 (en) * | 2008-07-30 | 2014-12-02 | Infineon Technologies Ag | Method and apparatus for storing data in solid state memory |
TWI393146B (zh) * | 2008-10-15 | 2013-04-11 | Genesys Logic Inc | 具有錯誤修正碼容量設定單元之快閃記憶體控制器及其方法 |
JP2010135030A (ja) * | 2008-12-06 | 2010-06-17 | Hitachi Ulsi Systems Co Ltd | 半導体メモリと半導体メモリの不良解析方法 |
US7936592B2 (en) | 2009-02-03 | 2011-05-03 | Seagate Technology Llc | Non-volatile memory cell with precessional switching |
WO2010125658A1 (ja) * | 2009-04-28 | 2010-11-04 | パイオニア株式会社 | 再生装置及び方法、記録装置及び方法、並びにコンピュータプログラム |
US8599614B2 (en) * | 2009-04-30 | 2013-12-03 | Powerchip Corporation | Programming method for NAND flash memory device to reduce electrons in channels |
JP2011187144A (ja) * | 2010-03-11 | 2011-09-22 | Toshiba Corp | 半導体記憶装置 |
-
2011
- 2011-01-25 US US13/013,616 patent/US8456926B2/en active Active
- 2011-11-08 KR KR1020110115727A patent/KR101863552B1/ko active IP Right Grant
- 2011-11-11 EP EP11188861.6A patent/EP2455942B1/en active Active
- 2011-11-16 TW TW100141729A patent/TWI489472B/zh active
- 2011-11-17 JP JP2011251457A patent/JP5990859B2/ja active Active
- 2011-11-18 CN CN201110367818.3A patent/CN102467976B/zh active Active
-
2016
- 2016-06-13 JP JP2016116969A patent/JP6203905B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6063800A (ja) * | 1983-09-17 | 1985-04-12 | Toshiba Corp | 半導体メモリ |
JPH0675864A (ja) * | 1992-08-27 | 1994-03-18 | Kofu Nippon Denki Kk | メモリエラー回復方式 |
JP2001052487A (ja) * | 1999-08-06 | 2001-02-23 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2002150795A (ja) * | 2000-11-13 | 2002-05-24 | Nec Microsystems Ltd | 半導体集積回路 |
JP2007334813A (ja) * | 2006-06-19 | 2007-12-27 | Nec Electronics Corp | メモリ制御回路及びデータ書き換え方法 |
JP2008034089A (ja) * | 2006-07-26 | 2008-02-14 | Samsung Electronics Co Ltd | フラッシュメモリ装置と該プログラム方法及びメモリシステム |
JP2010033620A (ja) * | 2006-10-30 | 2010-02-12 | Renesas Technology Corp | 磁性体メモリ |
JP5990859B2 (ja) * | 2010-11-18 | 2016-09-14 | サムスン セミコンダクター,インコーポレーテッド | メモリ書込みエラー訂正回路 |
Also Published As
Publication number | Publication date |
---|---|
TWI489472B (zh) | 2015-06-21 |
JP5990859B2 (ja) | 2016-09-14 |
KR101863552B1 (ko) | 2018-06-01 |
JP6203905B2 (ja) | 2017-09-27 |
EP2455942B1 (en) | 2014-06-11 |
US8456926B2 (en) | 2013-06-04 |
CN102467976B (zh) | 2017-08-04 |
EP2455942A2 (en) | 2012-05-23 |
KR20120053953A (ko) | 2012-05-29 |
EP2455942A3 (en) | 2013-01-09 |
CN102467976A (zh) | 2012-05-23 |
TW201225097A (en) | 2012-06-16 |
US20120127804A1 (en) | 2012-05-24 |
JP2012109010A (ja) | 2012-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6203905B2 (ja) | メモリ書込みエラー訂正回路 | |
US9069719B2 (en) | Method and system for providing a smart memory architecture | |
US9679664B2 (en) | Method and system for providing a smart memory architecture | |
US8625339B2 (en) | Multi-cell per memory-bit circuit and method | |
US9030899B2 (en) | Memory device with post package repair, operation method of the same and memory system including the same | |
US7362644B2 (en) | Configurable MRAM and method of configuration | |
CN109726141B (zh) | 用于防止对故障地址重复编程的存储装置及其操作方法 | |
US10338835B2 (en) | Memory device | |
CN107430558B (zh) | 半导体存储装置 | |
CN103247347A (zh) | 提供智能存储器架构的方法和系统 | |
KR102038036B1 (ko) | 반도체 장치 및 반도체 장치를 포함하는 반도체 시스템 | |
TWI631559B (zh) | 半導體記憶裝置 | |
JP5712681B2 (ja) | 半導体記憶装置 | |
JP2005063553A (ja) | 磁性体記憶装置 | |
JP2022051347A (ja) | 半導体記憶装置およびその制御方法 | |
JP2010027202A (ja) | 磁性体記憶装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170502 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170522 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170711 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170731 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170830 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6203905 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |