JP2016136618A - ストライプ状トレンチゲート構造、トランジスタメサおよびダイオードメサを有する半導体素子 - Google Patents
ストライプ状トレンチゲート構造、トランジスタメサおよびダイオードメサを有する半導体素子 Download PDFInfo
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- JP2016136618A JP2016136618A JP2015247135A JP2015247135A JP2016136618A JP 2016136618 A JP2016136618 A JP 2016136618A JP 2015247135 A JP2015247135 A JP 2015247135A JP 2015247135 A JP2015247135 A JP 2015247135A JP 2016136618 A JP2016136618 A JP 2016136618A
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- trench gate
- mesa
- diode
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 210000000746 body region Anatomy 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims description 53
- 239000002019 doping agent Substances 0.000 claims description 13
- 230000007480 spreading Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 239000002800 charge carrier Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 27
- 239000010410 layer Substances 0.000 description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- -1 AlSi Chemical compound 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
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- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】半導体素子500は、第1の水平方向に沿って半導体ボディ100に延在するストライプ状トレンチゲート構造150を含む。近隣のトレンチゲート構造間のトランジスタメサ170は、ボディ領域115およびソースゾーン110を含み、ボディ領域は、ドリフト構造120との第1のpn接合pn1およびソースゾーンとの第2のpn接合pn2を形成する。ソースゾーンは、2つの近隣のトレンチゲート構造にそれぞれ直接隣接する。ダイオード領域116の少なくとも一部分を含むダイオードメサ180は、ドリフト構造との第3のpn接合pn3を形成する。ダイオードメサは、2つの近隣のトレンチゲート構造にそれぞれ直接隣接する。トランジスタメサおよびダイオードメサは、少なくとも第1の水平方向に沿って交互に配置する。
【選択図】図1B
Description
また、結晶面(−1100)、(1−100)、(11−20)、結晶方向<1−100>、<11−20>は、それぞれ、図中の
を表す。
101 第1の表面
102 第2の表面
104 第1の側壁
105 第2の側壁
106 下部
108 ステップ
110 ソースゾーン
115 ボディゾーン
116 ダイオード領域
117 開口部
120 ドリフト構造
121 ドリフトゾーン
122 電流波及ゾーン
129 接触層
150 トレンチゲート構造
151 ゲート誘電体
155 ゲート電極
170 トランジスタメサ
180 ダイオードメサ
310 第1の負荷電極
320 第2の負荷電極
500 半導体素子
501 4H−SiCウエハ
503 平坦部
Claims (25)
- 六方晶格子を有する半導体材料に基づく半導体ボディ(100)のストライプ状トレンチゲート構造(150)であって、トレンチゲート構造のトレンチ側壁が結晶面(1−100)および結晶面(−1100)である、ストライプ状トレンチゲート構造(150)と、
近隣のトレンチゲート構造(150)間のトランジスタメサ(170)であって、ドリフト構造(120)との第1のpn接合(pn1)およびソースゾーン(110)との第2のpn接合(pn2)を形成するボディ領域(115)を備える、トランジスタメサ(170)と
を備える半導体素子。 - ダイオード領域(116)の少なくとも一部分を備えるダイオードメサ(180)であって、ダイオード領域(116)が、前記ドリフト構造(120)との第3のpn接合(pn3)を形成し、2つの近隣のトレンチゲート構造(150)にそれぞれ直接隣接し、トランジスタメサ(170)およびダイオードメサ(180)が、少なくとも第1の水平方向に沿って交互に配置する、ダイオードメサ(180)
をさらに備える、請求項1に記載の半導体素子。 - 第1の表面(101)と前記第3のpn接合(pn3)との間の距離が、前記第1の表面(101)に垂直な前記トレンチゲート構造(150)の垂直エクステンションより大きい、
請求項2に記載の半導体素子。 - 前記ダイオード領域(116)が、前記第1の表面(101)に対する前記トレンチゲート構造(150)の垂直投影におけるセクションを含む、
請求項3に記載の半導体素子。 - 前記ダイオード領域(116)が、前記ドリフト構造(120)に直接隣接する遮蔽部分(116b)と、前記第1の表面(101)から前記遮蔽部分(116b)を分離する接触部分(116a)とをそれぞれ備え、前記接触部分(116a)の平均正味ドーパント濃度が、前記遮蔽部分(116b)の平均正味ドーパント濃度の少なくとも2倍高い、
請求項2から4のいずれか一項に記載の半導体素子。 - 前記遮蔽部分(116b)が、前記第1の表面(101)に対する前記トレンチゲート構造(150)の垂直投影におけるセクションを含み、前記トランジスタメサ(170)とは重なり合わない、
請求項5に記載の半導体素子。 - 前記ドリフト構造(120)が、低濃度にドープされたドリフトゾーン(121)と、前記ドリフトゾーン(121)と前記ボディ領域(115)との間の電流波及ゾーン(122)とを備え、前記電流波及ゾーン(122)の平均正味ドーパント濃度が、前記ドリフトゾーン(121)の平均正味ドーパント濃度の少なくとも2倍高い、
請求項2から6のいずれか一項に記載の半導体素子。 - 電荷キャリア移動度が、前記トレンチゲート構造(150)の両方の縦側壁に沿って等しい、
請求項2から7のいずれか一項に記載の半導体素子。 - 前記ソースゾーン(110)が、2つの近隣のトレンチゲート構造(150)のそれぞれに直接隣接する、
請求項2から8のいずれか一項に記載の半導体素子。 - 前記トレンチゲート構造(150)がそこから前記半導体ボディ(100)内まで延在する前記半導体ボディ(100)の第1の表面(101)が、結晶面(0001)によって形成された第1の表面セクション(101a)と、前記第1の表面セクション(101a)を接続する第2の表面セクション(101b)とを有するスタガ型の表面であり、前記トレンチゲート構造(150)の縦軸が、前記スタガ型の第1の表面(101)の前記第1および第2の表面セクション(101a、101b)の異なる向きから得られるステップ(108)に直交して伸びる、
請求項1から9のいずれか一項に記載の半導体素子。 - 半分のステップ高で前記ステップ(108)を切断する平均表面(101x)が、結晶方向<11−20>に対して傾斜している、
請求項10に記載の半導体素子。 - 前記トランジスタメサ(170)およびダイオードメサ(180)が、前記第1の水平方向に直交する第2の水平方向に沿って、さらに交互に配置され、前記トレンチゲート構造(150)によって分離される、
請求項2から11のいずれか一項に記載の半導体素子。 - 前記第1の水平方向に沿った前記トランジスタメサ(170)の第1の長さと前記第1の水平方向に沿った前記ダイオードメサ(180)の第2の長さとが等しい、
請求項2から12のいずれか一項に記載の半導体素子。 - 前記第1の水平方向に沿った前記トランジスタメサ(170)の第1の長さが、前記第1の水平方向に沿った前記ダイオードメサ(180)の第2の長さより大きい、
請求項2から12のいずれか一項に記載の半導体素子。 - 前記ダイオード領域(116)が、前記ドリフト構造(120)に直接隣接する遮蔽部分(116b)と、前記遮蔽部分(116b)を前記第1の表面(101)と接続する接触部分(116a)とをそれぞれ備え、前記接触部分(116a)の平均正味ドーパント濃度が、前記遮蔽部分(116b)の平均正味ドーパント濃度の少なくとも2倍高く、前記遮蔽部分(116b)が、前記第1の表面に対する前記トレンチゲート構造(150)の垂直投影におけるセクションを含む、
請求項2から14のいずれか一項に記載の半導体素子。 - 前記トレンチゲート構造(150)の垂直エクステンションより大きい前記第1の表面(101)までの距離の前記ダイオード領域(116)の一部分が、前記トランジスタメサ(170)を中心とする開口部(117)を有する隣接遮蔽層を形成する、
請求項2から14のいずれか一項に記載の半導体素子。 - 前記開口部(117)が回転対称である、
請求項16に記載の半導体素子。 - 前記開口部(117)が円形状の開口部である、
請求項16または17に記載の半導体素子。 - 前記ソースおよびダイオード領域(110、116)のオーム抵抗接点が、前記第1の表面(101)に沿って形成される、
請求項2から18のいずれか一項に記載の半導体素子。 - 前記半導体ボディ(100)が4H−SiCからなる、
請求項1から19のいずれか一項に記載の半導体素子。 - 前記ストライプ状トレンチゲート構造(150)が、軸外切断に直交して水平方向に延在する、
請求項1から20のいずれか一項に記載の半導体素子。 - 結晶面に平行な第1の表面セクション(101a)および前記第1の表面セクション(101a)に対して傾斜している第2の表面セクション(101b)を備えるスタガ型の第1の表面(101)を有する4H−SiCからなる半導体ボディのストライプ状トレンチゲート構造(150)であって、前記第1の表面セクション(101a)と前記第2の表面セクション(101b)との間のエッジ(108)によって形成されたステップに直交する第1の水平方向に沿って延在する、ストライプ状トレンチゲート構造(150)と、
近隣のトレンチゲート構造(150)間のトランジスタメサ(170)であって、ドリフト構造(120)との第1のpn接合(pn1)およびソースゾーン(110)との第2のpn接合(pn2)をそれぞれ形成するボディ領域(115)を備える、トランジスタメサ(170)と
を備える半導体素子。 - ダイオード領域(116)の少なくとも一部分を備えるダイオードメサ(180)であって、ダイオード領域(116)が、前記ドリフト構造(120)との第3のpn接合(pn3)を形成し、2つの近隣のトレンチゲート構造(150)にそれぞれ直接隣接し、トランジスタメサ(170)およびダイオードメサ(180)が、少なくとも前記第1の水平方向に沿って交互に配置する、ダイオードメサ(180)
をさらに備える、請求項22に記載の半導体素子。 - 前記第1の水平方向が結晶方向<11−20>に平行である、
請求項22または23に記載の半導体素子。 - 第1の水平方向に沿って半導体ボディ(100)に延在するストライプ状トレンチゲート構造(150)であって、前記半導体ボディ(100)が六方晶格子を有する半導体材料に基づく、ストライプ状トレンチゲート構造(150)と、
近隣のトレンチゲート構造(150)間のトランジスタメサ(170)であって、ドリフト構造(120)との第1のpn接合(pn1)およびソースゾーン(110)との第2のpn接合(pn2)を形成するボディ領域(115)を備える、トランジスタメサ(170)と、
ダイオード領域(116)の少なくとも一部分を備えるダイオードメサ(180)であって、ダイオード領域(116)が、前記ドリフト構造(120)との第3のpn接合(pn3)を形成し、2つの近隣のトレンチゲート構造(150)にそれぞれ直接隣接し、トランジスタメサ(170)およびダイオードメサ(180)が、少なくとも前記第1の水平方向に沿って交互に配置する、ダイオードメサ(180)と
を備える半導体素子。
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US10304953B2 (en) | 2019-05-28 |
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US20190245075A1 (en) | 2019-08-08 |
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