JP2016111143A - ウエーハの生成方法 - Google Patents
ウエーハの生成方法 Download PDFInfo
- Publication number
- JP2016111143A JP2016111143A JP2014246222A JP2014246222A JP2016111143A JP 2016111143 A JP2016111143 A JP 2016111143A JP 2014246222 A JP2014246222 A JP 2014246222A JP 2014246222 A JP2014246222 A JP 2014246222A JP 2016111143 A JP2016111143 A JP 2016111143A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- modified layer
- ingot
- single crystal
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 48
- 238000000926 separation method Methods 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000001902 propagating effect Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 49
- 235000012431 wafers Nutrition 0.000 description 41
- 238000003825 pressing Methods 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 7
- 239000002346 layers by function Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Abstract
Description
波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :4ns
スポット径 :10μm
集光レンズの開口数(NA) :0.45
インデックス量 :400μm
11 六方晶単結晶インゴット
11a 第一の面(表面)
11b 第二の面(裏面)
13 第一のオリエンテーションフラット
15 第二のオリエンテーションフラット
17 第一の面の垂線
19 c軸
21 c面
23 改質層
25 クラック
26 支持テーブル
30 レーザービーム照射ユニット
36 集光器(レーザーヘッド)
54 押圧機構
56 ヘッド
58 押圧部材
Claims (6)
- 第一の面と該第一の面と反対側の第二の面と、該第一の面から該第二の面に至るc軸と、該c軸に直交するc面とを有する六方晶単結晶インゴットからウエーハを生成するウエーハの生成方法であって、
六方晶単結晶インゴットに対して透過性を有する波長のレーザービームの集光点を該第一の面から生成するウエーハの厚みに相当する深さに位置づけると共に、該集光点と該六方晶単結晶インゴットとを相対的に移動して該レーザービームを該第一の面に照射し、該第一の面に平行な改質層及び該改質層から伸長するクラックを形成して分離起点を形成する分離起点形成ステップと、
該分離起点形成ステップを実施した後、該分離起点からウエーハの厚みに相当する板状物を該六方晶単結晶インゴットから剥離して六方晶単結晶ウエーハを生成するウエーハ剥離ステップと、を備え、
該分離起点形成ステップは、該第一の面の垂線に対して該c軸がオフ角分傾き、該第一の面と該c面との間にオフ角が形成される方向と直交する方向にレーザービームの集光点を相対的に移動して直線状の改質層を形成する改質層形成ステップと、
該オフ角が形成される方向に該集光点を相対的に移動して所定量インデックスするインデックスステップと、
を含むことを特徴とするウエーハの生成方法。 - 該分離起点形成ステップは、直線状の改質層から該c面方向に伝播して形成されるクラックの幅を計測し、集光点のインデックス量を設定するインデックス量設定ステップを更に含む請求項1記載のウエーハの生成方法。
- 該インデックス量設定ステップにおいて、直線状の改質層から該c面方向に伝播して該改質層の片側に形成されるクラックの幅をWとした場合、設定するインデックス量はW以上2W以下である請求項2記載のウエーハの生成方法。
- 該分離起点形成ステップにおいて、六方晶単結晶インゴットにレーザービームの集光点が位置づけられて最初の改質層が形成されるまでは、集光点のインデックス量をW以下に設定してレーザービームを走査する請求項3記載のウエーハの生成方法。
- 該分離起点形成ステップは往路及び復路で実施され、往路で六方晶単結晶インゴットに改質層を形成した後、所定量インデックスし、復路で六方晶単結晶インゴットに改質層を形成する請求項1〜4の何れかに記載のウエーハの生成方法。
- 六方晶単結晶インゴットは、SiCインゴット、又はGaNインゴットから選択される請求項1〜5の何れかに記載のウエーハの生成方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014246222A JP6399913B2 (ja) | 2014-12-04 | 2014-12-04 | ウエーハの生成方法 |
TW104136021A TWI678438B (zh) | 2014-12-04 | 2015-11-02 | 晶圓的生成方法 |
MYPI2015704164A MY175831A (en) | 2014-12-04 | 2015-11-17 | Wafer producing method |
SG10201509454YA SG10201509454YA (en) | 2014-12-04 | 2015-11-17 | Wafer producing method |
CN201510854879.0A CN105665948B (zh) | 2014-12-04 | 2015-11-30 | 晶片的生成方法 |
US14/955,306 US9884390B2 (en) | 2014-12-04 | 2015-12-01 | Wafer producing method |
KR1020150171677A KR102341591B1 (ko) | 2014-12-04 | 2015-12-03 | 웨이퍼의 생성 방법 |
DE102015224321.4A DE102015224321B4 (de) | 2014-12-04 | 2015-12-04 | Wafer-Herstellungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014246222A JP6399913B2 (ja) | 2014-12-04 | 2014-12-04 | ウエーハの生成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016111143A true JP2016111143A (ja) | 2016-06-20 |
JP6399913B2 JP6399913B2 (ja) | 2018-10-03 |
Family
ID=55974402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014246222A Active JP6399913B2 (ja) | 2014-12-04 | 2014-12-04 | ウエーハの生成方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9884390B2 (ja) |
JP (1) | JP6399913B2 (ja) |
KR (1) | KR102341591B1 (ja) |
CN (1) | CN105665948B (ja) |
DE (1) | DE102015224321B4 (ja) |
MY (1) | MY175831A (ja) |
SG (1) | SG10201509454YA (ja) |
TW (1) | TWI678438B (ja) |
Cited By (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017188586A (ja) * | 2016-04-06 | 2017-10-12 | 株式会社ディスコ | ウエーハの生成方法 |
KR20180035689A (ko) * | 2016-09-29 | 2018-04-06 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
DE102017222047A1 (de) | 2016-12-06 | 2018-06-07 | Disco Corporation | Sic-waferherstellungsverfahren |
KR20180094798A (ko) | 2017-02-16 | 2018-08-24 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
KR20180094785A (ko) | 2017-02-16 | 2018-08-24 | 가부시기가이샤 디스코 | 웨이퍼 생성 방법 |
KR20190003346A (ko) * | 2017-06-30 | 2019-01-09 | 가부시기가이샤 디스코 | 레이저 가공 장치 및 레이저 가공 방법 |
KR20190024683A (ko) | 2017-08-30 | 2019-03-08 | 가부시기가이샤 디스코 | 레이저 가공 장치 |
DE102018219942A1 (de) | 2017-11-22 | 2019-05-23 | Disco Corporation | SiC-Ingot-Ausbildungsverfahren |
KR20190060666A (ko) | 2017-11-24 | 2019-06-03 | 가부시기가이샤 디스코 | 박리 장치 |
KR20190063387A (ko) | 2017-11-29 | 2019-06-07 | 가부시기가이샤 디스코 | 박리 장치 |
KR20190066589A (ko) | 2017-12-05 | 2019-06-13 | 가부시기가이샤 디스코 | 박리 장치 |
KR20190087287A (ko) | 2018-01-16 | 2019-07-24 | 가부시기가이샤 디스코 | 평탄화 방법 |
KR20190089730A (ko) | 2018-01-22 | 2019-07-31 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 |
DE102019203465A1 (de) | 2018-03-14 | 2019-09-19 | Disco Corporation | Verfahren zum herstellen eines wafers und vorrichtung zum herstellen eines wafers |
DE102019204233A1 (de) | 2018-03-27 | 2019-10-02 | Disco Corporation | Verfahren zum Herstellen eines Wafers und Vorrichtung zum Herstellen eines Wafers |
KR20190138590A (ko) | 2018-06-05 | 2019-12-13 | 가부시기가이샤 디스코 | 모따기 가공 방법 |
KR20200031515A (ko) | 2018-09-14 | 2020-03-24 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 레이저 가공 장치 |
KR20200053410A (ko) | 2018-11-08 | 2020-05-18 | 가부시기가이샤 디스코 | 패싯 영역의 검출 방법 및 검출 장치 및 웨이퍼의 생성 방법 및 레이저 가공 장치 |
DE102019217967A1 (de) | 2018-11-21 | 2020-05-28 | Disco Corporation | Waferherstellungsverfahren |
JP2020113664A (ja) * | 2019-01-15 | 2020-07-27 | 株式会社ディスコ | ウエーハ、及びウエーハの生成方法 |
JP2020145418A (ja) * | 2019-02-05 | 2020-09-10 | 株式会社ディスコ | 基板を製造する方法、及び基板の製造用システム |
JP2020537817A (ja) * | 2017-09-12 | 2020-12-24 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 仮ボンディングされた基板スタックを分離させるための装置および方法 |
KR20210048981A (ko) | 2019-10-24 | 2021-05-04 | 가부시기가이샤 디스코 | SiC 잉곳의 가공 방법 및 레이저 가공 장치 |
US11018059B2 (en) | 2018-08-28 | 2021-05-25 | Disco Corporation | SiC substrate processing method |
KR20210072698A (ko) | 2019-12-06 | 2021-06-17 | 가부시기가이샤 디스코 | 판상물 유지구 |
EP3838483A1 (en) | 2019-12-20 | 2021-06-23 | Disco Corporation | Method of grinding workpiece |
KR20210083164A (ko) | 2019-12-26 | 2021-07-06 | 가부시기가이샤 디스코 | SiC 잉곳의 가공 방법 및 레이저 가공 장치 |
DE102021200574A1 (de) | 2020-01-22 | 2021-07-22 | Disco Corporation | Waferherstellungsverfahren und waferherstellungsvorrichtung |
US11264280B2 (en) | 2017-06-19 | 2022-03-01 | Rohm Co., Ltd. | Semiconductor device manufacturing method and wafer-attached structure |
DE102021209901A1 (de) | 2020-09-18 | 2022-03-24 | Disco Corporation | Waferherstellungsverfahren |
DE102021212374A1 (de) | 2020-11-10 | 2022-05-12 | Disco Corporation | Waferherstellungsverfahren |
DE102021213771A1 (de) | 2020-12-11 | 2022-06-15 | Disco Corporation | Schleifverfahren für werkstück |
KR20220110065A (ko) | 2021-01-29 | 2022-08-05 | 가부시기가이샤 디스코 | 박리 장치 |
DE102022201387A1 (de) | 2021-02-19 | 2022-08-25 | Disco Corporation | Erfassungsvorrichtung |
DE102022201386A1 (de) | 2021-02-19 | 2022-08-25 | Disco Corporation | Laserbearbeitungsvorrichtung und laserbearbeitungsverfahren |
DE102018202984B4 (de) | 2017-03-01 | 2022-10-06 | Disco Corporation | Halbleiteringot-untersuchungsverfahren und -vorrichtung und laserbearbeitungsvorrichtung |
DE102022205698A1 (de) | 2021-06-11 | 2022-12-15 | Disco Corporation | Bearbeitungsverfahren und bearbeitungsvorrichtung für einen ingot |
EP4109078A1 (en) | 2021-06-24 | 2022-12-28 | Disco Corporation | Facet region detection method and wafer generation method |
DE102022206057A1 (de) | 2021-06-23 | 2022-12-29 | Disco Corporation | Abziehvorrichtung |
DE102022208278A1 (de) | 2021-08-16 | 2023-02-16 | Disco Corporation | Waferherstellungsverfahren |
DE102022209155A1 (de) | 2021-09-10 | 2023-03-16 | Disco Corporation | Beförderungsvorrichtung und abziehvorrichtung |
DE102022211195A1 (de) | 2021-10-29 | 2023-05-04 | Disco Corporation | Verfahren zum herstellen eines substrats |
EP4191640A1 (en) | 2021-12-06 | 2023-06-07 | Disco Corporation | Wafer production method and wafer production machine |
DE102023200028A1 (de) | 2022-01-13 | 2023-07-13 | Disco Corporation | Substratherstellungsverfahren |
DE102023200889A1 (de) | 2022-02-10 | 2023-08-10 | Disco Corporation | Ausrichtungsverfahren |
DE102023203268A1 (de) | 2022-04-11 | 2023-10-12 | Disco Corporation | Waferherstellungsverfahren |
DE102023203263A1 (de) | 2022-04-18 | 2023-10-19 | Disco Corporation | Wasserproduktionssystem und Waferherstellungsverfahren |
DE102023203261A1 (de) | 2022-04-18 | 2023-10-19 | Disco Corporation | Waferherstellungsverfahren |
DE102023204226A1 (de) | 2022-05-16 | 2023-11-16 | Disco Corporation | Laserbearbeitungsvorrichtung |
DE102023204466A1 (de) | 2022-05-19 | 2023-11-23 | Disco Corporation | Abziehvorrichtung |
DE102023206091A1 (de) | 2022-07-05 | 2024-01-11 | Disco Corporation | Substratherstellungsverfahren |
DE102023207465A1 (de) | 2022-08-10 | 2024-02-15 | Disco Corporation | Laserbearbeitungsmaschine und waferherstellungsverfahren |
US11945049B2 (en) | 2019-06-14 | 2024-04-02 | Disco Corporation | SiC wafer manufacturing method and SiC wafer manufacturing apparatus |
DE102023210970A1 (de) | 2022-11-11 | 2024-05-16 | Disco Corporation | Laserbearbeitungsvorrichtung und bearbeitungsverfahren |
DE102023211731A1 (de) | 2022-12-02 | 2024-06-13 | Disco Corporation | Laserbearbeitungsvorrichtung |
JP7500655B2 (ja) | 2019-02-05 | 2024-06-17 | 株式会社ディスコ | 基板を製造する方法、及び基板の製造用システム |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
JP6472347B2 (ja) | 2015-07-21 | 2019-02-20 | 株式会社ディスコ | ウエーハの薄化方法 |
JP6486239B2 (ja) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6486240B2 (ja) * | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6690983B2 (ja) | 2016-04-11 | 2020-04-28 | 株式会社ディスコ | ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 |
KR102526611B1 (ko) | 2016-05-31 | 2023-04-28 | 엘지디스플레이 주식회사 | 표시장치 |
JP6698468B2 (ja) * | 2016-08-10 | 2020-05-27 | 株式会社ディスコ | ウエーハ生成方法 |
JP6723877B2 (ja) * | 2016-08-29 | 2020-07-15 | 株式会社ディスコ | ウエーハ生成方法 |
JP6781639B2 (ja) * | 2017-01-31 | 2020-11-04 | 株式会社ディスコ | ウエーハ生成方法 |
JP7009194B2 (ja) * | 2017-12-12 | 2022-01-25 | 株式会社ディスコ | ウエーハ生成装置および搬送トレー |
JP7164396B2 (ja) * | 2018-10-29 | 2022-11-01 | 株式会社ディスコ | ウエーハ生成装置 |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
CN111986986B (zh) * | 2020-08-24 | 2024-05-03 | 松山湖材料实验室 | 一种晶圆的剥离方法及剥离装置 |
JP2022071717A (ja) | 2020-10-28 | 2022-05-16 | 株式会社デンソー | 加工ウェハおよびチップ構成ウェハの製造方法 |
JP2022164087A (ja) | 2021-04-15 | 2022-10-27 | 株式会社ディスコ | レーザー加工装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013049161A (ja) * | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5223692A (en) | 1991-09-23 | 1993-06-29 | General Electric Company | Method and apparatus for laser trepanning |
FR2716303B1 (fr) * | 1994-02-11 | 1996-04-05 | Franck Delorme | Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement. |
US5561544A (en) | 1995-03-06 | 1996-10-01 | Macken; John A. | Laser scanning system with reflecting optics |
TW350095B (en) | 1995-11-21 | 1999-01-11 | Daido Hoxan Inc | Cutting method and apparatus for semiconductor materials |
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
CN101335235B (zh) | 2002-03-12 | 2010-10-13 | 浜松光子学株式会社 | 基板的分割方法 |
US20040144301A1 (en) | 2003-01-24 | 2004-07-29 | Neudeck Philip G. | Method for growth of bulk crystals by vapor phase epitaxy |
JP3998639B2 (ja) | 2004-01-13 | 2007-10-31 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP2005268752A (ja) * | 2004-02-19 | 2005-09-29 | Canon Inc | レーザ割断方法、被割断部材および半導体素子チップ |
US20050217560A1 (en) * | 2004-03-31 | 2005-10-06 | Tolchinsky Peter G | Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
WO2005122223A1 (en) | 2004-06-11 | 2005-12-22 | Showa Denko K.K. | Production method of compound semiconductor device wafer |
JP4809632B2 (ja) | 2005-06-01 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4749799B2 (ja) * | 2005-08-12 | 2011-08-17 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP4183093B2 (ja) | 2005-09-12 | 2008-11-19 | コバレントマテリアル株式会社 | シリコンウエハの製造方法 |
WO2007087354A2 (en) * | 2006-01-24 | 2007-08-02 | Baer Stephen C | Cleaving wafers from silicon crystals |
JP4402708B2 (ja) * | 2007-08-03 | 2010-01-20 | 浜松ホトニクス株式会社 | レーザ加工方法、レーザ加工装置及びその製造方法 |
JP5011072B2 (ja) | 2007-11-21 | 2012-08-29 | 株式会社ディスコ | レーザー加工装置 |
US8338218B2 (en) | 2008-06-26 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module |
JP5692969B2 (ja) | 2008-09-01 | 2015-04-01 | 浜松ホトニクス株式会社 | 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム |
JP2010153590A (ja) * | 2008-12-25 | 2010-07-08 | Hamamatsu Photonics Kk | 切断用加工方法 |
JP5446325B2 (ja) | 2009-03-03 | 2014-03-19 | 豊田合成株式会社 | レーザ加工方法および化合物半導体発光素子の製造方法 |
WO2010123976A1 (en) | 2009-04-21 | 2010-10-28 | Tetrasun, Inc. | Method for forming structures in a solar cell |
JP5537081B2 (ja) | 2009-07-28 | 2014-07-02 | 浜松ホトニクス株式会社 | 加工対象物切断方法 |
JP5379604B2 (ja) | 2009-08-21 | 2013-12-25 | 浜松ホトニクス株式会社 | レーザ加工方法及びチップ |
JP5558128B2 (ja) * | 2010-02-05 | 2014-07-23 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP2011165766A (ja) * | 2010-02-05 | 2011-08-25 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
JP2012109341A (ja) * | 2010-11-16 | 2012-06-07 | Shibuya Kogyo Co Ltd | 半導体材料の切断方法と切断装置 |
JP5670764B2 (ja) * | 2011-01-13 | 2015-02-18 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5480169B2 (ja) * | 2011-01-13 | 2014-04-23 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5775312B2 (ja) * | 2011-01-13 | 2015-09-09 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5670765B2 (ja) * | 2011-01-13 | 2015-02-18 | 浜松ホトニクス株式会社 | レーザ加工方法 |
KR20130103624A (ko) * | 2011-02-10 | 2013-09-23 | 신에츠 폴리머 가부시키가이샤 | 단결정 기판 제조 방법 및 내부 개질층 형성 단결정 부재 |
JP5904720B2 (ja) * | 2011-05-12 | 2016-04-20 | 株式会社ディスコ | ウエーハの分割方法 |
JP5912287B2 (ja) | 2011-05-19 | 2016-04-27 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP5912293B2 (ja) | 2011-05-24 | 2016-04-27 | 株式会社ディスコ | レーザー加工装置 |
JP6002982B2 (ja) | 2011-08-31 | 2016-10-05 | 株式会社フジシール | パウチ容器 |
JP5878330B2 (ja) | 2011-10-18 | 2016-03-08 | 株式会社ディスコ | レーザー光線の出力設定方法およびレーザー加工装置 |
JP5843393B2 (ja) * | 2012-02-01 | 2016-01-13 | 信越ポリマー株式会社 | 単結晶基板の製造方法、単結晶基板、および、内部改質層形成単結晶部材の製造方法 |
JP2014041924A (ja) | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
JP2014041925A (ja) | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
JP6090998B2 (ja) | 2013-01-31 | 2017-03-08 | 一般財団法人電力中央研究所 | 六方晶単結晶の製造方法、六方晶単結晶ウエハの製造方法 |
US9768343B2 (en) | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
JP6390898B2 (ja) | 2014-08-22 | 2018-09-19 | アイシン精機株式会社 | 基板の製造方法、加工対象物の切断方法、及び、レーザ加工装置 |
JP6358941B2 (ja) * | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395613B2 (ja) | 2015-01-06 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395633B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395634B2 (ja) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6425606B2 (ja) * | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | ウエーハの生成方法 |
JP6482389B2 (ja) * | 2015-06-02 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
JP6472333B2 (ja) * | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | ウエーハの生成方法 |
JP6482423B2 (ja) * | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | ウエーハの生成方法 |
JP6486240B2 (ja) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP6486239B2 (ja) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | ウエーハの加工方法 |
-
2014
- 2014-12-04 JP JP2014246222A patent/JP6399913B2/ja active Active
-
2015
- 2015-11-02 TW TW104136021A patent/TWI678438B/zh active
- 2015-11-17 SG SG10201509454YA patent/SG10201509454YA/en unknown
- 2015-11-17 MY MYPI2015704164A patent/MY175831A/en unknown
- 2015-11-30 CN CN201510854879.0A patent/CN105665948B/zh active Active
- 2015-12-01 US US14/955,306 patent/US9884390B2/en active Active
- 2015-12-03 KR KR1020150171677A patent/KR102341591B1/ko active IP Right Grant
- 2015-12-04 DE DE102015224321.4A patent/DE102015224321B4/de active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013049161A (ja) * | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | 加工対象物切断方法 |
Cited By (116)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017188586A (ja) * | 2016-04-06 | 2017-10-12 | 株式会社ディスコ | ウエーハの生成方法 |
TWI703027B (zh) * | 2016-04-06 | 2020-09-01 | 日商迪思科股份有限公司 | 晶圓的生成方法 |
KR20180035689A (ko) * | 2016-09-29 | 2018-04-06 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
KR102260344B1 (ko) | 2016-09-29 | 2021-06-02 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
DE102017222047A1 (de) | 2016-12-06 | 2018-06-07 | Disco Corporation | Sic-waferherstellungsverfahren |
KR20180064980A (ko) | 2016-12-06 | 2018-06-15 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
US10155323B2 (en) | 2016-12-06 | 2018-12-18 | Disco Corporation | SiC wafer producing method |
KR102279621B1 (ko) | 2016-12-06 | 2021-07-19 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
US10828726B2 (en) | 2017-02-16 | 2020-11-10 | Disco Corporation | SiC wafer producing method using ultrasonic wave |
KR20180094798A (ko) | 2017-02-16 | 2018-08-24 | 가부시기가이샤 디스코 | SiC 웨이퍼의 생성 방법 |
KR20180094785A (ko) | 2017-02-16 | 2018-08-24 | 가부시기가이샤 디스코 | 웨이퍼 생성 방법 |
DE102018202984B4 (de) | 2017-03-01 | 2022-10-06 | Disco Corporation | Halbleiteringot-untersuchungsverfahren und -vorrichtung und laserbearbeitungsvorrichtung |
US11742243B2 (en) | 2017-06-19 | 2023-08-29 | Rohm Co., Ltd. | Semiconductor device manufacturing method and wafer-attached structure |
US11264280B2 (en) | 2017-06-19 | 2022-03-01 | Rohm Co., Ltd. | Semiconductor device manufacturing method and wafer-attached structure |
JP2019012795A (ja) * | 2017-06-30 | 2019-01-24 | 株式会社ディスコ | レーザー加工装置及びレーザー加工方法 |
JP6994852B2 (ja) | 2017-06-30 | 2022-01-14 | 株式会社ディスコ | レーザー加工装置及びレーザー加工方法 |
KR20190003346A (ko) * | 2017-06-30 | 2019-01-09 | 가부시기가이샤 디스코 | 레이저 가공 장치 및 레이저 가공 방법 |
TWI761544B (zh) * | 2017-06-30 | 2022-04-21 | 日商迪思科股份有限公司 | 雷射加工裝置以及雷射加工方法 |
CN109202308A (zh) * | 2017-06-30 | 2019-01-15 | 株式会社迪思科 | 激光加工装置和激光加工方法 |
KR102518005B1 (ko) | 2017-06-30 | 2023-04-04 | 가부시기가이샤 디스코 | 레이저 가공 장치 및 레이저 가공 방법 |
US10946482B2 (en) | 2017-08-30 | 2021-03-16 | Disco Corporation | Laser processing apparatus |
KR20190024683A (ko) | 2017-08-30 | 2019-03-08 | 가부시기가이샤 디스코 | 레이저 가공 장치 |
JP7130735B2 (ja) | 2017-09-12 | 2022-09-05 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 仮ボンディングされた基板スタックを分離させるための装置および方法 |
US11534868B2 (en) | 2017-09-12 | 2022-12-27 | Ev Group E. Thallner Gmbh | Device and method for separating a temporarily bonded substrate stack |
JP2020537817A (ja) * | 2017-09-12 | 2020-12-24 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 仮ボンディングされた基板スタックを分離させるための装置および方法 |
KR20190059206A (ko) | 2017-11-22 | 2019-05-30 | 가부시기가이샤 디스코 | SiC 잉곳의 성형 방법 |
US11534890B2 (en) | 2017-11-22 | 2022-12-27 | Disco Corporation | SiC ingot forming method |
CN109807693A (zh) * | 2017-11-22 | 2019-05-28 | 株式会社迪思科 | SiC晶锭的成型方法 |
DE102018219942A1 (de) | 2017-11-22 | 2019-05-23 | Disco Corporation | SiC-Ingot-Ausbildungsverfahren |
US10507637B2 (en) | 2017-11-24 | 2019-12-17 | Disco Corporation | Peeling apparatus |
KR20190060666A (ko) | 2017-11-24 | 2019-06-03 | 가부시기가이샤 디스코 | 박리 장치 |
US11358306B2 (en) | 2017-11-29 | 2022-06-14 | Disco Corporation | Peeling apparatus |
KR20190063387A (ko) | 2017-11-29 | 2019-06-07 | 가부시기가이샤 디스코 | 박리 장치 |
KR20190066589A (ko) | 2017-12-05 | 2019-06-13 | 가부시기가이샤 디스코 | 박리 장치 |
DE102019200383B4 (de) | 2018-01-16 | 2024-03-21 | Disco Corporation | Planarisierungsverfahren |
US10714353B2 (en) | 2018-01-16 | 2020-07-14 | Disco Corporation | Planarization method |
KR20190087287A (ko) | 2018-01-16 | 2019-07-24 | 가부시기가이샤 디스코 | 평탄화 방법 |
KR20190089730A (ko) | 2018-01-22 | 2019-07-31 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 |
CZ309498B6 (cs) * | 2018-03-14 | 2023-03-01 | Disco Corporation | Způsob výroby waferu a zařízení pro výrobu waferu |
KR20190108488A (ko) | 2018-03-14 | 2019-09-24 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 |
DE102019203465A1 (de) | 2018-03-14 | 2019-09-19 | Disco Corporation | Verfahren zum herstellen eines wafers und vorrichtung zum herstellen eines wafers |
US10886127B2 (en) | 2018-03-14 | 2021-01-05 | Disco Corporation | Method of producing wafer and apparatus for producing wafer |
US11114307B2 (en) | 2018-03-27 | 2021-09-07 | Disco Corporation | Method of producing a wafer from an ingot including a peel-off detecting step |
KR20190113573A (ko) | 2018-03-27 | 2019-10-08 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 |
DE102019204233A1 (de) | 2018-03-27 | 2019-10-02 | Disco Corporation | Verfahren zum Herstellen eines Wafers und Vorrichtung zum Herstellen eines Wafers |
KR20190138590A (ko) | 2018-06-05 | 2019-12-13 | 가부시기가이샤 디스코 | 모따기 가공 방법 |
US11018059B2 (en) | 2018-08-28 | 2021-05-25 | Disco Corporation | SiC substrate processing method |
KR20200031515A (ko) | 2018-09-14 | 2020-03-24 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 레이저 가공 장치 |
US11597039B2 (en) | 2018-09-14 | 2023-03-07 | Disco Corporation | Wafer producing method and laser processing apparatus |
US11273522B2 (en) | 2018-09-14 | 2022-03-15 | Disco Corporation | Wafer producing method and laser processing apparatus |
US11340163B2 (en) | 2018-11-08 | 2022-05-24 | Disco Corporation | Method and apparatus for detecting facet region, wafer producing method, and laser processing apparatus |
KR20200053410A (ko) | 2018-11-08 | 2020-05-18 | 가부시기가이샤 디스코 | 패싯 영역의 검출 방법 및 검출 장치 및 웨이퍼의 생성 방법 및 레이저 가공 장치 |
KR20200060250A (ko) | 2018-11-21 | 2020-05-29 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 |
US11446771B2 (en) | 2018-11-21 | 2022-09-20 | Disco Corporation | Method for producing wafers using ultrasound |
DE102019217967A1 (de) | 2018-11-21 | 2020-05-28 | Disco Corporation | Waferherstellungsverfahren |
JP2020113664A (ja) * | 2019-01-15 | 2020-07-27 | 株式会社ディスコ | ウエーハ、及びウエーハの生成方法 |
JP7210292B2 (ja) | 2019-01-15 | 2023-01-23 | 株式会社ディスコ | ウエーハの生成方法 |
US11072042B2 (en) | 2019-01-15 | 2021-07-27 | Disco Corporation | Wafer and wafer producing method |
JP7500655B2 (ja) | 2019-02-05 | 2024-06-17 | 株式会社ディスコ | 基板を製造する方法、及び基板の製造用システム |
JP2020145418A (ja) * | 2019-02-05 | 2020-09-10 | 株式会社ディスコ | 基板を製造する方法、及び基板の製造用システム |
JP7135016B2 (ja) | 2019-02-05 | 2022-09-12 | 株式会社ディスコ | 基板を製造する方法、及び基板の製造用システム |
US11945049B2 (en) | 2019-06-14 | 2024-04-02 | Disco Corporation | SiC wafer manufacturing method and SiC wafer manufacturing apparatus |
KR20210048981A (ko) | 2019-10-24 | 2021-05-04 | 가부시기가이샤 디스코 | SiC 잉곳의 가공 방법 및 레이저 가공 장치 |
US11618106B2 (en) | 2019-10-24 | 2023-04-04 | Disco Corporation | Processing method and laser processing apparatus including imaging detector for SiC ingot |
KR20210072698A (ko) | 2019-12-06 | 2021-06-17 | 가부시기가이샤 디스코 | 판상물 유지구 |
KR20210080191A (ko) | 2019-12-20 | 2021-06-30 | 가부시기가이샤 디스코 | 워크의 연삭 방법 |
US11813717B2 (en) | 2019-12-20 | 2023-11-14 | Disco Corporation | Method of grinding workpiece |
EP3838483A1 (en) | 2019-12-20 | 2021-06-23 | Disco Corporation | Method of grinding workpiece |
US11958132B2 (en) | 2019-12-26 | 2024-04-16 | Disco Corporation | SiC ingot processing method and laser processing apparatus |
KR20210083164A (ko) | 2019-12-26 | 2021-07-06 | 가부시기가이샤 디스코 | SiC 잉곳의 가공 방법 및 레이저 가공 장치 |
KR20210095025A (ko) | 2020-01-22 | 2021-07-30 | 가부시기가이샤 디스코 | 웨이퍼 생성 방법, 및 웨이퍼 생성 장치 |
DE102021200574A1 (de) | 2020-01-22 | 2021-07-22 | Disco Corporation | Waferherstellungsverfahren und waferherstellungsvorrichtung |
KR20220037946A (ko) | 2020-09-18 | 2022-03-25 | 가부시기가이샤 디스코 | 웨이퍼의 제조 방법 |
DE102021209901A1 (de) | 2020-09-18 | 2022-03-24 | Disco Corporation | Waferherstellungsverfahren |
KR20220063734A (ko) | 2020-11-10 | 2022-05-17 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 |
DE102021212374A1 (de) | 2020-11-10 | 2022-05-12 | Disco Corporation | Waferherstellungsverfahren |
DE102021213771A1 (de) | 2020-12-11 | 2022-06-15 | Disco Corporation | Schleifverfahren für werkstück |
KR20220083600A (ko) | 2020-12-11 | 2022-06-20 | 가부시기가이샤 디스코 | 피가공물의 연삭 방법 |
KR20220110065A (ko) | 2021-01-29 | 2022-08-05 | 가부시기가이샤 디스코 | 박리 장치 |
DE102022201387A1 (de) | 2021-02-19 | 2022-08-25 | Disco Corporation | Erfassungsvorrichtung |
KR20220118914A (ko) | 2021-02-19 | 2022-08-26 | 가부시기가이샤 디스코 | 레이저 가공 장치 및 레이저 가공 방법 |
KR20220118918A (ko) | 2021-02-19 | 2022-08-26 | 가부시기가이샤 디스코 | 검출 장치 |
DE102022201386A1 (de) | 2021-02-19 | 2022-08-25 | Disco Corporation | Laserbearbeitungsvorrichtung und laserbearbeitungsverfahren |
US11726040B2 (en) | 2021-02-19 | 2023-08-15 | Disco Corporation | Detecting apparatus |
KR20220167223A (ko) | 2021-06-11 | 2022-12-20 | 가부시기가이샤 디스코 | 잉곳의 처리 방법 및 처리 장치 |
DE102022205698A1 (de) | 2021-06-11 | 2022-12-15 | Disco Corporation | Bearbeitungsverfahren und bearbeitungsvorrichtung für einen ingot |
KR20220170752A (ko) | 2021-06-23 | 2022-12-30 | 가부시기가이샤 디스코 | 박리 장치 |
DE102022206057A1 (de) | 2021-06-23 | 2022-12-29 | Disco Corporation | Abziehvorrichtung |
EP4109078A1 (en) | 2021-06-24 | 2022-12-28 | Disco Corporation | Facet region detection method and wafer generation method |
KR20230025755A (ko) | 2021-08-16 | 2023-02-23 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 |
DE102022208278A1 (de) | 2021-08-16 | 2023-02-16 | Disco Corporation | Waferherstellungsverfahren |
DE102022209155A1 (de) | 2021-09-10 | 2023-03-16 | Disco Corporation | Beförderungsvorrichtung und abziehvorrichtung |
KR20230038099A (ko) | 2021-09-10 | 2023-03-17 | 가부시기가이샤 디스코 | 반송 장치 및 박리 장치 |
DE102022211195A1 (de) | 2021-10-29 | 2023-05-04 | Disco Corporation | Verfahren zum herstellen eines substrats |
KR20230062378A (ko) | 2021-10-29 | 2023-05-09 | 가부시기가이샤 디스코 | 기판의 제조 방법 |
EP4191640A1 (en) | 2021-12-06 | 2023-06-07 | Disco Corporation | Wafer production method and wafer production machine |
KR20230085074A (ko) | 2021-12-06 | 2023-06-13 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 및 웨이퍼 생성 장치 |
KR20230109557A (ko) | 2022-01-13 | 2023-07-20 | 가부시기가이샤 디스코 | 기판의 제조 방법 |
DE102023200028A1 (de) | 2022-01-13 | 2023-07-13 | Disco Corporation | Substratherstellungsverfahren |
KR20230120995A (ko) | 2022-02-10 | 2023-08-17 | 가부시기가이샤 디스코 | 얼라인먼트 방법 |
DE102023200889A1 (de) | 2022-02-10 | 2023-08-10 | Disco Corporation | Ausrichtungsverfahren |
DE102023203268A1 (de) | 2022-04-11 | 2023-10-12 | Disco Corporation | Waferherstellungsverfahren |
KR20230145917A (ko) | 2022-04-11 | 2023-10-18 | 가부시기가이샤 디스코 | 웨이퍼의 제조 방법 |
DE102023203263A1 (de) | 2022-04-18 | 2023-10-19 | Disco Corporation | Wasserproduktionssystem und Waferherstellungsverfahren |
KR20230148756A (ko) | 2022-04-18 | 2023-10-25 | 가부시기가이샤 디스코 | 물 생성 장치 및 웨이퍼의 제조 방법 |
KR20230148757A (ko) | 2022-04-18 | 2023-10-25 | 가부시기가이샤 디스코 | 웨이퍼의 제조 방법 |
DE102023203261A1 (de) | 2022-04-18 | 2023-10-19 | Disco Corporation | Waferherstellungsverfahren |
DE102023204226A1 (de) | 2022-05-16 | 2023-11-16 | Disco Corporation | Laserbearbeitungsvorrichtung |
DE102023204466A1 (de) | 2022-05-19 | 2023-11-23 | Disco Corporation | Abziehvorrichtung |
DE102023206091A1 (de) | 2022-07-05 | 2024-01-11 | Disco Corporation | Substratherstellungsverfahren |
KR20240005584A (ko) | 2022-07-05 | 2024-01-12 | 가부시기가이샤 디스코 | 기판의 제조 방법 |
DE102023207465A1 (de) | 2022-08-10 | 2024-02-15 | Disco Corporation | Laserbearbeitungsmaschine und waferherstellungsverfahren |
KR20240021705A (ko) | 2022-08-10 | 2024-02-19 | 가부시기가이샤 디스코 | 레이저 가공 장치 및 웨이퍼의 제조 방법 |
DE102023210970A1 (de) | 2022-11-11 | 2024-05-16 | Disco Corporation | Laserbearbeitungsvorrichtung und bearbeitungsverfahren |
KR20240069634A (ko) | 2022-11-11 | 2024-05-20 | 가부시기가이샤 디스코 | 레이저 가공 장치 및 가공 방법 |
DE102023211731A1 (de) | 2022-12-02 | 2024-06-13 | Disco Corporation | Laserbearbeitungsvorrichtung |
Also Published As
Publication number | Publication date |
---|---|
DE102015224321A1 (de) | 2016-06-09 |
KR20160067780A (ko) | 2016-06-14 |
DE102015224321B4 (de) | 2024-05-02 |
MY175831A (en) | 2020-07-12 |
SG10201509454YA (en) | 2016-07-28 |
TWI678438B (zh) | 2019-12-01 |
CN105665948B (zh) | 2019-04-19 |
US20160158882A1 (en) | 2016-06-09 |
US9884390B2 (en) | 2018-02-06 |
JP6399913B2 (ja) | 2018-10-03 |
KR102341591B1 (ko) | 2021-12-22 |
TW201631227A (zh) | 2016-09-01 |
CN105665948A (zh) | 2016-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6399913B2 (ja) | ウエーハの生成方法 | |
JP6358941B2 (ja) | ウエーハの生成方法 | |
JP6472333B2 (ja) | ウエーハの生成方法 | |
JP6395613B2 (ja) | ウエーハの生成方法 | |
JP6395633B2 (ja) | ウエーハの生成方法 | |
JP6391471B2 (ja) | ウエーハの生成方法 | |
JP6395632B2 (ja) | ウエーハの生成方法 | |
JP6482423B2 (ja) | ウエーハの生成方法 | |
JP6482389B2 (ja) | ウエーハの生成方法 | |
JP6395634B2 (ja) | ウエーハの生成方法 | |
JP6429715B2 (ja) | ウエーハの生成方法 | |
JP6604891B2 (ja) | ウエーハの生成方法 | |
JP6425606B2 (ja) | ウエーハの生成方法 | |
JP6602207B2 (ja) | SiCウエーハの生成方法 | |
JP6358940B2 (ja) | ウエーハの生成方法 | |
JP6399914B2 (ja) | ウエーハの生成方法 | |
JP6494382B2 (ja) | ウエーハの生成方法 | |
JP6355540B2 (ja) | ウエーハの生成方法 | |
JP6366485B2 (ja) | ウエーハの生成方法 | |
JP6418927B2 (ja) | ウエーハの生成方法 | |
JP6472332B2 (ja) | ウエーハの生成方法 | |
JP6366486B2 (ja) | ウエーハの生成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171026 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180626 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180816 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180904 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180904 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6399913 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |