JP2016011964A5 - - Google Patents
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- Publication number
- JP2016011964A5 JP2016011964A5 JP2015206268A JP2015206268A JP2016011964A5 JP 2016011964 A5 JP2016011964 A5 JP 2016011964A5 JP 2015206268 A JP2015206268 A JP 2015206268A JP 2015206268 A JP2015206268 A JP 2015206268A JP 2016011964 A5 JP2016011964 A5 JP 2016011964A5
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- intermediate layer
- temperature sensor
- sensor chip
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims 42
- 239000002241 glass-ceramic Substances 0.000 claims 25
- 238000000034 method Methods 0.000 claims 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 9
- 239000010408 film Substances 0.000 claims 8
- 238000007740 vapor deposition Methods 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
- 150000002500 ions Chemical class 0.000 claims 5
- 150000001768 cations Chemical class 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 4
- 230000001419 dependent effect Effects 0.000 claims 4
- 238000005240 physical vapour deposition Methods 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 3
- 150000004706 metal oxides Chemical class 0.000 claims 3
- 229910052697 platinum Inorganic materials 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 238000002161 passivation Methods 0.000 claims 2
- 239000002516 radical scavenger Substances 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000010292 electrical insulation Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007046900.6A DE102007046900C5 (de) | 2007-09-28 | 2007-09-28 | Hochtemperatursensor und ein Verfahren zu dessen Herstellung |
| DE102007046900.6 | 2007-09-28 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014041721A Division JP5855149B2 (ja) | 2007-09-28 | 2014-03-04 | １２００℃膜抵抗体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016011964A JP2016011964A (ja) | 2016-01-21 |
| JP2016011964A5 true JP2016011964A5 (https=) | 2016-04-07 |
| JP5976186B2 JP5976186B2 (ja) | 2016-08-23 |
Family
ID=40433426
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008249692A Expired - Fee Related JP5641683B2 (ja) | 2007-09-28 | 2008-09-29 | １２００℃膜抵抗体 |
| JP2014041721A Expired - Fee Related JP5855149B2 (ja) | 2007-09-28 | 2014-03-04 | １２００℃膜抵抗体 |
| JP2015206268A Expired - Fee Related JP5976186B2 (ja) | 2007-09-28 | 2015-10-20 | １２００℃膜抵抗体 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008249692A Expired - Fee Related JP5641683B2 (ja) | 2007-09-28 | 2008-09-29 | １２００℃膜抵抗体 |
| JP2014041721A Expired - Fee Related JP5855149B2 (ja) | 2007-09-28 | 2014-03-04 | １２００℃膜抵抗体 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8183974B2 (https=) |
| JP (3) | JP5641683B2 (https=) |
| KR (1) | KR101489001B1 (https=) |
| DE (1) | DE102007046900C5 (https=) |
| FR (1) | FR2921724B1 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8162536B2 (en) * | 2008-12-15 | 2012-04-24 | Delphi Technologies, Inc. | Combined sensor |
| DE102009007940B4 (de) * | 2009-02-06 | 2010-11-18 | Heraeus Sensor Technology Gmbh | Nichtleitfähiges Zirkonoxid |
| DE102009017676B3 (de) * | 2009-04-16 | 2010-08-05 | Heraeus Sensor Technology Gmbh | Hochtemperatursensor mit Chipdrähten aus Chromoxid bildender Eisenlegierung |
| DE102009045794A1 (de) | 2009-10-19 | 2011-04-28 | Innovative Sensor Technology Ist Ag | Sensor zur Bestimmung mindestens einer physikalischen Prozessgröße |
| DE102010050315C5 (de) * | 2010-11-05 | 2014-12-04 | Danfoss Silicon Power Gmbh | Verfahren zur Herstellung von gesinterten, elektrischen Baugruppen und damit hergestellte Leistungshalbleitermodule |
| DE102011051845B3 (de) * | 2011-07-14 | 2012-10-25 | Heraeus Sensor Technology Gmbh | Messwiderstand mit Schutzrahmen |
| JP5736348B2 (ja) * | 2012-06-21 | 2015-06-17 | 立山科学工業株式会社 | 薄膜抵抗体温度センサとその製造方法 |
| DE102012110210B4 (de) * | 2012-10-25 | 2017-06-01 | Heraeus Sensor Technology Gmbh | Hochtemperaturchip mit hoher Stabilität |
| JP6404726B2 (ja) | 2014-03-07 | 2018-10-17 | 日本特殊陶業株式会社 | 感温素子及び温度センサ |
| DE102014104219B4 (de) * | 2014-03-26 | 2019-09-12 | Heraeus Nexensos Gmbh | Keramikträger sowie Sensorelement, Heizelement und Sensormodul jeweils mit einem Keramikträger und Verfahren zur Herstellung eines Keramikträgers |
| EP3136067B1 (en) * | 2014-04-21 | 2019-01-30 | Kyocera Corporation | Wiring substrate and temperature sensing element |
| JP6430910B2 (ja) | 2015-08-05 | 2018-11-28 | 日本特殊陶業株式会社 | 感温素子および温度センサ |
| CN109073479B (zh) * | 2016-04-26 | 2021-02-19 | 京瓷株式会社 | 传感器基板以及传感器装置 |
| JP2018066592A (ja) * | 2016-10-17 | 2018-04-26 | Koa株式会社 | 白金温度センサ素子 |
| JP6821384B2 (ja) * | 2016-10-17 | 2021-01-27 | Koa株式会社 | 白金温度センサ素子 |
| DE102017104162A1 (de) | 2017-02-28 | 2018-08-30 | Innovative Sensor Technology Ist Ag | Sensorelement und thermischer Strömungssensor zur Bestimmung einer physikalischen Größe eines Messmediums |
| JP2018146404A (ja) * | 2017-03-06 | 2018-09-20 | Koa株式会社 | 温度センサ素子 |
| JP6929126B2 (ja) * | 2017-05-16 | 2021-09-01 | Koa株式会社 | 温度センサ素子 |
| JP6929125B2 (ja) * | 2017-05-16 | 2021-09-01 | Koa株式会社 | 温度センサ素子 |
| DE102018110889A1 (de) * | 2017-05-16 | 2018-11-22 | Koa Corporation | Temperatursensor-Element |
| EP3404405A1 (de) * | 2017-05-18 | 2018-11-21 | Heraeus Sensor Technology GmbH | Sensor zur bestimmung von gasparametern |
| EP3409467B1 (de) | 2017-05-30 | 2019-07-03 | Heraeus Nexensos GmbH | Heizer mit einem co-gesinterten mehrschichtenaufbau |
| US10371581B2 (en) * | 2017-06-02 | 2019-08-06 | Sensata Technologies, Inc. | Alumina diffusion barrier for sensing elements |
| DE102017222495A1 (de) | 2017-12-12 | 2019-06-13 | Heraeus Sensor Technology Gmbh | Sensor mit thermoschockbeständigem Substrat |
| DE102018101419A1 (de) * | 2018-01-23 | 2019-07-25 | Biotronik Se & Co. Kg | Elektrischer Widerstand, insbesondere für medizinische Implantate |
| DE202019002164U1 (de) | 2019-05-17 | 2019-06-21 | Heraeus Nexensos Gmbh | Verbesserter Hochtemperaturchip |
| DE102019113127A1 (de) * | 2019-05-17 | 2020-11-19 | Georg Bernitz | Messfühler |
| US20210247218A1 (en) * | 2020-02-10 | 2021-08-12 | Hutchinson Technology Incorporated | Systems And Methods To Increase Sensor Robustness |
| CN112268632B (zh) * | 2020-10-19 | 2022-11-04 | 中国电子科技集团公司第四十九研究所 | 一种温度系数可调的耐1000℃高温金属薄膜热电阻及其制备方法 |
| CN113529037A (zh) * | 2021-07-19 | 2021-10-22 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | 一种铂薄膜温度传感器的封装方法 |
| EP4470980A1 (de) * | 2023-06-02 | 2024-12-04 | Yageo Nexensos GmbH | Temperatursensor mit fixiertropfen und runden poren (rohs) |
| EP4470979A1 (de) * | 2023-06-02 | 2024-12-04 | Yageo Nexensos GmbH | Brechbarer temperatursensor mit rohs konformem fixiertropfen |
| DE102023126209A1 (de) | 2023-09-27 | 2025-03-27 | Innovative Sensor Technology Ist Ag | Vorrichtung zum Erfassen der Temperatur eines Mediums oder zum Heizen des Mediums und Herstellungsverfahren |
| CN121068047B (zh) * | 2025-11-05 | 2026-02-24 | 深圳汇北川科技股份有限公司 | 一种用于固态电池的抗干扰高稳定性薄膜铂温度传感器 |
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| JP4253642B2 (ja) * | 2005-02-25 | 2009-04-15 | 日本特殊陶業株式会社 | 温度センサ |
| DE102007038680A1 (de) | 2007-08-15 | 2009-02-26 | Heraeus Sensor Technology Gmbh | Rußsensor mit glatter, reiner Al2O3-Oberfläche |
-
2007
- 2007-09-28 DE DE102007046900.6A patent/DE102007046900C5/de active Active
-
2008
- 2008-09-25 US US12/237,742 patent/US8183974B2/en active Active
- 2008-09-26 KR KR20080094807A patent/KR101489001B1/ko active Active
- 2008-09-29 JP JP2008249692A patent/JP5641683B2/ja not_active Expired - Fee Related
- 2008-09-29 FR FR0856520A patent/FR2921724B1/fr active Active
-
2014
- 2014-03-04 JP JP2014041721A patent/JP5855149B2/ja not_active Expired - Fee Related
-
2015
- 2015-10-20 JP JP2015206268A patent/JP5976186B2/ja not_active Expired - Fee Related
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