JP2016004999A - Icパッケージ用高密度フィルム - Google Patents
Icパッケージ用高密度フィルム Download PDFInfo
- Publication number
- JP2016004999A JP2016004999A JP2015115421A JP2015115421A JP2016004999A JP 2016004999 A JP2016004999 A JP 2016004999A JP 2015115421 A JP2015115421 A JP 2015115421A JP 2015115421 A JP2015115421 A JP 2015115421A JP 2016004999 A JP2016004999 A JP 2016004999A
- Authority
- JP
- Japan
- Prior art keywords
- pads
- density
- high density
- rdl
- density film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000012778 molding material Substances 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000000835 fiber Substances 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/25—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
本願は、2014年6月18日に出願された米国特許出願番号第14/308,702号の一部継続出願である。
20 シリコンインターポーザ
21 上部再配線層
22 成形材料
25 回路ビルドアップ層
31 第1剥離層
32 シード層
33 フォトレジスト
51 チップ
52 半田ボール
53 ヒートシンク
55 繊維系充填材
200 貫通ビア
201 絶縁ライナー
206 側部
210 メタルパッド
220 メタルパッド
311 第2剥離層
341 底部パッド
342 第1再配線回路
343 第1上部パッド
351 第1誘電体層
352 第2誘電体層
441 第2再配線回路
442 第2上部パッド
451 第3誘電体層
452 第4誘電体層
511 成形材料
521 誘電体層
Claims (13)
- ICパッケージ用の高密度フィルムであって、
底部に形成される複数の底部パッドと、上部に形成される複数の第1上部パッドと共に、ICデザインルールに従って作製される底部再配線層と、
上部に形成される複数の第2上部パッドと共に、前記複数の第1上部パッドを起点として使用し、PCBデザインルールに従って作製される上部再配線層と、
を含み、
前記複数の底部パッドの密度は、前記複数の第1上部パッドの密度よりも高く、
前記複数の第1上部パッドの密度は、前記複数の第2上部パッドの密度よりも高い、
ICパッケージ用の高密度フィルム。 - 請求項1に記載の高密度フィルムと、
前記複数の底部パッドに電気的に結合される、少なくとも1つのチップと、
を含む、ICパッケージ。 - 前記チップを封止する成形材料を更に含む、請求項2に記載のICパッケージ。
- 前記成形材料は、前記チップの底面と同一平面の底面を有する、請求項3に記載のICパッケージ。
- 複数の半田ボールを更に含み、各々は、対応する第2上部パッドの上部に構成される、請求項4に記載のICパッケージ。
- ICパッケージ用の高密度フィルムを作製するためのプロセスであって、当該プロセスは、
底部に形成される複数の底部パッドと、上部に形成される複数の第1上部パッドと共に、ICデザインルールに従って、底部再配線層を作製する工程と、
上部に形成される複数の第2上部パッドと共に、前記複数の第1上部パッドを起点として使用し、PCBデザインルールに従って、上部再配線層を作製する工程と、
を含み、
前記複数の底部パッドの密度は、前記複数の第1上部パッドの密度よりも高く、
前記複数の第1上部パッドの密度は、前記複数の第2上部パッドの密度よりも高い、
ICパッケージ用の高密度フィルムを作製するためのプロセス。 - 前記の底部再配線層を作製する工程は、
仮キャリアIを作る工程と、
前記仮キャリアIの上部に第1剥離層を塗布する工程と、
前記第1剥離層の上部にシード層を形成する工程と、
前記シード層の上部に複数の底部パッドを形成する工程と、
前記複数の底部パッド間の前記シード層をエッチングする工程と、
上部に形成される複数の第1上部パッドと共に、前記複数の底部パッドを起点として使用し、ICデザインルールに従って、底部再配線層を形成して回路フィルムRDL Iを形成する工程とを更に含む、請求項6に記載のICパッケージ用の高密度フィルムを作製するためのプロセス。 - 前記仮キャリアIを除去して前記回路フィルムRDL Iを解放する工程と、
前記回路フィルムRDL Iを個片化して複数のRDL Iユニットを作り出す工程と、
仮キャリアIIを作る工程と、
前記仮キャリアIIの上部に第2剥離層を塗布する工程と、
前記第2剥離層の上部に複数のRDL Iユニットを配置する工程と、
上部に形成される複数の第2上部パッドと共に、前記複数の第1上部パッドを起点として使用し、PCBデザインルールに従って、前記回路フィルムRDL Iの上部に第2上部再配線層RDL IIを形成して高密度フィルムを形成する工程とを更に含む、請求項7に記載のICパッケージ用の高密度フィルムを作製するためのプロセス。 - 前記仮キャリアIIを除去して高密度フィルムを解放する工程と、
前記複数の底部パッドの底部に少なくとも1つのチップを実装する工程とを更に含む、請求項8に記載のICパッケージ用の高密度フィルムを作製するためのプロセス。 - 成形材料で前記チップを成形する工程と、
前記成形材料を薄化して前記チップの底面を露出させる工程とを更に含む、請求項9に記載のICパッケージ用の高密度フィルムを作製するためのプロセス。 - 前記チップの底部にヒートシンクを取り付ける工程を更に含む、請求項10に記載のICパッケージ用の高密度フィルムを作製するためのプロセス。
- 個片化して複数の個別のユニットを形成する工程を更に含む、請求項11に記載のICパッケージ用の高密度フィルムを作製するためのプロセス。
- 前記上部再配線層又は前記底部再配線層のいずれか一方に埋め込まれる複数の誘電体層と、
前記誘電体層のうちの少なくとも1つに充填される繊維系充填材とを更に含む、請求項1に記載のICパッケージ用の高密度フィルム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201414308702A | 2014-06-18 | 2014-06-18 | |
US14/308,702 | 2014-06-18 | ||
US14/509,395 US9799622B2 (en) | 2014-06-18 | 2014-10-08 | High density film for IC package |
US14/509,395 | 2014-10-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016004999A true JP2016004999A (ja) | 2016-01-12 |
JP6484116B2 JP6484116B2 (ja) | 2019-03-13 |
Family
ID=53189710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015115421A Active JP6484116B2 (ja) | 2014-06-18 | 2015-06-08 | Icパッケージ用高密度フィルム |
Country Status (6)
Country | Link |
---|---|
US (2) | US9799622B2 (ja) |
EP (1) | EP2958142B1 (ja) |
JP (1) | JP6484116B2 (ja) |
KR (1) | KR101997487B1 (ja) |
CN (1) | CN204614786U (ja) |
TW (1) | TWM515202U (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019016647A (ja) * | 2017-07-04 | 2019-01-31 | 日立化成株式会社 | ファンアウト・ウエハレベルパッケージの仮固定方法 |
JP2019114761A (ja) * | 2017-12-20 | 2019-07-11 | 力成科技股▲分▼有限公司 | パッケージ構造およびその製造方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104538318B (zh) * | 2014-12-24 | 2017-12-19 | 通富微电子股份有限公司 | 一种扇出型圆片级芯片封装方法 |
US10043769B2 (en) | 2015-06-03 | 2018-08-07 | Micron Technology, Inc. | Semiconductor devices including dummy chips |
CN104966709B (zh) | 2015-07-29 | 2017-11-03 | 恒劲科技股份有限公司 | 封装基板及其制作方法 |
JP2017050464A (ja) * | 2015-09-03 | 2017-03-09 | 凸版印刷株式会社 | 配線基板積層体、その製造方法及び半導体装置の製造方法 |
US9799616B2 (en) * | 2016-03-08 | 2017-10-24 | Dyi-chung Hu | Package substrate with double sided fine line RDL |
US9786586B1 (en) | 2016-08-21 | 2017-10-10 | Micron Technology, Inc. | Semiconductor package and fabrication method thereof |
US10032702B2 (en) | 2016-12-09 | 2018-07-24 | Dyi-chung Hu | Package structure and manufacturing method thereof |
US10002852B1 (en) * | 2016-12-15 | 2018-06-19 | Dyi-chung Hu | Package on package configuration |
JP6783648B2 (ja) * | 2016-12-26 | 2020-11-11 | 新光電気工業株式会社 | 配線基板、半導体装置 |
US10687419B2 (en) * | 2017-06-13 | 2020-06-16 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
US10902769B2 (en) | 2017-07-12 | 2021-01-26 | Facebook Technologies, Llc | Multi-layer fabrication for pixels with calibration compensation |
US10733930B2 (en) * | 2017-08-23 | 2020-08-04 | Facebook Technologies, Llc | Interposer for multi-layer display architecture |
CN107564900B (zh) * | 2017-08-29 | 2019-09-03 | 中国电子科技集团公司第五十八研究所 | 基于射频信号传输的扇出型封装结构及制造方法 |
US11798865B2 (en) | 2019-03-04 | 2023-10-24 | Intel Corporation | Nested architectures for enhanced heterogeneous integration |
CN113571494A (zh) * | 2020-04-28 | 2021-10-29 | 群创光电股份有限公司 | 电子装置及其制作方法 |
US20230197645A1 (en) * | 2021-12-20 | 2023-06-22 | Nxp Usa, Inc. | Radio frequency packages containing multilevel power substrates and associated fabrication methods |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001177010A (ja) * | 1999-10-05 | 2001-06-29 | Nec Corp | 配線基板、配線基板を有する半導体装置、及び、その製造方法、実装方法 |
JP2004311912A (ja) * | 2002-12-06 | 2004-11-04 | Sony Corp | 回路基板モジュール及びその製造方法 |
WO2007129545A1 (ja) * | 2006-05-02 | 2007-11-15 | Ibiden Co., Ltd. | 耐熱性基板内蔵回路配線板 |
US20120153445A1 (en) * | 2010-12-15 | 2012-06-21 | Samsung Electronics Co., Ltd. | Hybrid substrates, semiconductor packages including the same and methods for fabricating semiconductor packages |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5162240A (en) | 1989-06-16 | 1992-11-10 | Hitachi, Ltd. | Method and apparatus of fabricating electric circuit pattern on thick and thin film hybrid multilayer wiring substrate |
JPH11289167A (ja) * | 1998-03-31 | 1999-10-19 | Nec Corp | 多層配線板 |
US7038142B2 (en) * | 2002-01-24 | 2006-05-02 | Fujitsu Limited | Circuit board and method for fabricating the same, and electronic device |
JP5356876B2 (ja) | 2008-03-28 | 2013-12-04 | 日本特殊陶業株式会社 | 多層配線基板及びその製造方法 |
JP2009290124A (ja) * | 2008-05-30 | 2009-12-10 | Fujitsu Ltd | プリント配線板 |
JP5550280B2 (ja) * | 2009-07-29 | 2014-07-16 | 京セラ株式会社 | 多層配線基板 |
WO2012009831A1 (zh) * | 2010-07-23 | 2012-01-26 | 欣兴电子股份有限公司 | 线路板及其制造方法 |
US8749254B2 (en) * | 2010-11-15 | 2014-06-10 | Advanced Micro Devices, Inc. | Power cycling test arrangement |
JP5837783B2 (ja) * | 2011-09-08 | 2015-12-24 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
JP5977051B2 (ja) * | 2012-03-21 | 2016-08-24 | 新光電気工業株式会社 | 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 |
TWI499023B (zh) | 2012-10-11 | 2015-09-01 | Ind Tech Res Inst | 封裝基板及其製法 |
-
2014
- 2014-10-08 US US14/509,395 patent/US9799622B2/en active Active
-
2015
- 2015-04-30 KR KR1020150061134A patent/KR101997487B1/ko active IP Right Grant
- 2015-05-04 TW TW104206788U patent/TWM515202U/zh unknown
- 2015-05-07 CN CN201520289542.5U patent/CN204614786U/zh not_active Expired - Fee Related
- 2015-05-19 EP EP15168229.1A patent/EP2958142B1/en active Active
- 2015-06-08 JP JP2015115421A patent/JP6484116B2/ja active Active
-
2017
- 2017-09-04 US US15/694,858 patent/US10304794B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001177010A (ja) * | 1999-10-05 | 2001-06-29 | Nec Corp | 配線基板、配線基板を有する半導体装置、及び、その製造方法、実装方法 |
JP2004311912A (ja) * | 2002-12-06 | 2004-11-04 | Sony Corp | 回路基板モジュール及びその製造方法 |
WO2007129545A1 (ja) * | 2006-05-02 | 2007-11-15 | Ibiden Co., Ltd. | 耐熱性基板内蔵回路配線板 |
US20120153445A1 (en) * | 2010-12-15 | 2012-06-21 | Samsung Electronics Co., Ltd. | Hybrid substrates, semiconductor packages including the same and methods for fabricating semiconductor packages |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019016647A (ja) * | 2017-07-04 | 2019-01-31 | 日立化成株式会社 | ファンアウト・ウエハレベルパッケージの仮固定方法 |
JP2019114761A (ja) * | 2017-12-20 | 2019-07-11 | 力成科技股▲分▼有限公司 | パッケージ構造およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9799622B2 (en) | 2017-10-24 |
KR20160011139A (ko) | 2016-01-29 |
US10304794B2 (en) | 2019-05-28 |
TWM515202U (zh) | 2016-01-01 |
KR101997487B1 (ko) | 2019-07-08 |
JP6484116B2 (ja) | 2019-03-13 |
CN204614786U (zh) | 2015-09-02 |
US20170365573A1 (en) | 2017-12-21 |
EP2958142B1 (en) | 2020-03-11 |
EP2958142A1 (en) | 2015-12-23 |
US20150371965A1 (en) | 2015-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6484116B2 (ja) | Icパッケージ用高密度フィルム | |
US9263373B2 (en) | Thin film RDL for nanochip package | |
TWI576927B (zh) | 半導體裝置及其製造方法 | |
TWI751530B (zh) | 半導體裝置之製造方法 | |
WO2017143782A1 (zh) | 埋入硅基板扇出型3d封装结构 | |
US7772691B2 (en) | Thermally enhanced wafer level package | |
TWI527165B (zh) | 半導體封裝結構與其製法 | |
US20140042638A1 (en) | Semiconductor package and method of fabricating the same | |
TW201822330A (zh) | 晶片封裝結構 | |
TW201826409A (zh) | 半導體封裝、封裝上封裝及其製造方法 | |
KR101497808B1 (ko) | 몰딩 컴파운드 구조물 | |
TW201030859A (en) | Semiconductor package and method for manufacturing the same | |
TWI614848B (zh) | 電子封裝結構及其製法 | |
US20150041969A1 (en) | Semiconductor package and fabrication method thereof | |
TW201735745A (zh) | 載體超薄基材 | |
TWI705507B (zh) | 封裝基材的製作方法 | |
US20120129315A1 (en) | Method for fabricating semiconductor package | |
TWI567894B (zh) | 晶片封裝 | |
US9362256B2 (en) | Bonding process for a chip bonding to a thin film substrate | |
KR101803605B1 (ko) | 패키지화된 반도체 디바이스 및 그 패키징 방법 | |
TWI593073B (zh) | 用於形成半導體封裝的方法、封裝設備以及晶片系統 | |
TWI611484B (zh) | 電子封裝結構及其製法 | |
TW202407902A (zh) | 半導體裝置與半導體裝置所用的接合結構的形成方法 | |
TW201306172A (zh) | 半導體裝置之製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180904 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180831 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190122 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190215 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6484116 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |