JP2015515125A - 薄膜トランジスタのアレイ基板及びその製造方法、並びに電子デバイス - Google Patents
薄膜トランジスタのアレイ基板及びその製造方法、並びに電子デバイス Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000000059 patterning Methods 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000004380 ashing Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 85
- 230000005684 electric field Effects 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 230000014759 maintenance of location Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
ステップ101として、透明基板に、第1の透明導電層で形成された画素電極のパターンと、第1の金属層で形成された互いに分離しているドレイン電極、ソース電極及びデータラインのパターンとを形成する第1のパターニング工程と、
ステップ102として、第1のパターニング工程をした透明基板に、ゲート絶縁層のパターンと、透明酸化物層で形成された活性層のパターンを形成する第2のパターニング工程と、
ステップ103として、第2のパターニング工程をした透明基板に、第2の透明導電層で形成された共通電極のパターンと、第2の金属層で形成されたゲート電極及びゲートラインのパターンとを形成する第3のパターニング工程と、を備えてもよい。
2 第1の透明導電層
3 第1の金属層
4 フォトレジストマスク
5 ドレイン電極、ソース電極及びデータライン
WP フォトレジスト無し領域
HP フォトレジスト一部保留領域
NP フォトレジスト完全保留領域
6 画素電極
7 活性層
8 ゲート絶縁層
9 第2の透明導電層
10 第2の金属層
11 フォトレジストマスク
21 透明基板
22 画素電極
23 ソース電極、ドレイン電極及びデータライン
24 活性層
25 ゲート絶縁層
26 共通電極
27 ゲート電極及びゲートライン
Claims (12)
- 薄膜トランジスタのアレイ基板の製造方法であって、
透明基板に、第1の透明導電層で形成された画素電極のパターンと、第1の金属層で形成された互いに分離しているドレイン電極、ソース電極及びデータラインのパターンとを形成する第1のパターニング工程と、
前記第1のパターニング工程をした前記透明基板に、ゲート絶縁層のパターンと、透明酸化物層で形成された活性層のパターンとを形成する第2のパターニング工程と、
前記第2のパターニング工程をした前記透明基板に、第2の透明導電層で形成された共通電極のパターンと、第2の金属層で形成されたゲート電極及びゲートラインのパターンとを形成する第3のパターニング工程と、を備えることを特徴とする、薄膜トランジスタのアレイ基板の製造方法。 - 前記第1のパターニング工程が、
前記透明基板に前記第1の透明導電層及び前記第1の金属層を順に堆積する工程と、
前記第1の金属層にフォトレジスト層を塗布する工程と、
ダブルトーンマスクによって前記フォトレジスト層を露光して現像した後、エッチングし、前記第1の金属層で形成された互いに分離している前記ドレイン電極、前記ソース電極及び前記データラインのパターンを形成し、前記フォトレジスト層に対してアッシング工程を行った後、再度エッチングし、前記第1の透明導電層で形成された前記画素電極のパターンを形成する工程と、を備えることを特徴とする、請求項1に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記透明基板に前記第1の透明導電層及び前記第1の金属層を順に堆積する工程が、
マグネトロンスパッタによって、前記透明基板に厚みが40〜70nmである前記第1の透明導電層、及び厚みが200〜400nmである前記第1の金属層を堆積する工程を備えることを特徴とする、請求項1または2に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記第1の透明導電層としてIZOまたはITOを用い、
前記第1の金属層としてCr、W、Ti、Ta、Mo、Al及びCuの中の少なくとも1つを用いることを特徴とする、請求項3に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記第2のパターニング工程が、
前記第1のパターニング工程をした前記透明基板に前記透明酸化物層及び前記ゲート絶縁層を順に堆積する工程と、
前記ゲート絶縁層にフォトレジスト層を塗布する工程と、
ダブルトーンマスクによって前記フォトレジスト層を露光して現像した後、エッチングし、前記ゲート絶縁層のパターンを形成し、前記フォトレジスト層に対してアッシング工程を行った後、再度エッチングし、前記活性層のパターンを形成する工程と、を備えることを特徴とする、請求項1〜4のいずれか1項に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記第1のパターニング工程をした前記透明基板に前記透明酸化物層及び前記ゲート絶縁層を順に堆積する工程が、
マグネトロンスパッタによって、前記第1のパターニング工程をした前記透明基板に厚みが20〜50nmである前記透明酸化物層を堆積する工程と、
プラズマ化学気相蒸着法又はマグネトロンスパッタによって前記透明酸化物層に厚みが300〜400nmである前記ゲート絶縁層を堆積する工程と、を備えることを特徴とする、請求項5に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記透明酸化物層としてIGZO、ZnOまたはIZOを用い、
マグネトロンスパッタによって前記ゲート絶縁層を堆積するとき、前記ゲート絶縁層としてAl2O3又はAlNを用い、
プラズマ化学気相蒸着法によって前記ゲート絶縁層を堆積するとき、前記ゲート絶縁層としてSiO2またはSiNxを用いることを特徴とする、請求項6に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記第3のパターニング工程が、
前記第2のパターニング工程をした前記透明基板に前記第2の透明導電層及び前記第2の金属層を順に堆積する工程と、
前記第2の金属層にフォトレジスト層を塗布する工程と、
ダブルトーンマスクによって前記フォトレジスト層を露光して現像した後、エッチングし、前記第2の金属層で形成された前記ゲート電極及び前記ゲートラインのパターンを形成し、前記フォトレジスト層に対してアッシング工程を行った後、再度エッチングし、前記第2の透明導電層で形成された前記共通電極のパターンを形成する工程と、を備えることを特徴とする、請求項1〜7のいずれか1項に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記第2のパターニング工程をした前記透明基板に前記第2の透明導電層及び前記第2の金属層を順に堆積する工程が、
マグネトロンスパッタによって、前記第2のパターニング工程をした前記透明基板に厚みが40〜70nmである前記第2の透明導電層及び厚みが200〜400nmである前記第2の金属層を堆積する工程を備えることを特徴とする、請求項8に記載の薄膜トランジスタのアレイ基板の製造方法。 - 前記第2の透明導電層としてIZO又はITOを用い、
前記第2の金属層としてCr、W、Ti、Ta、Mo、Al及びCuの中の少なくとも1つを用いることを特徴とする、請求項9に記載の薄膜トランジスタのアレイ基板の製造方法。 - 薄膜トランジスタのアレイ基板であって、
透明基板と、
前記透明基板にあり、第1の透明導電層で形成された画素電極と、
前記画素電極にあり、第1の金属層で形成されたソース電極、ドレイン電極及びデータラインと、
前記透明基板にあり、透明酸化物層で形成された活性層と、
前記活性層にあるゲート絶縁層と、
前記ゲート絶縁層にあり、第2の透明導電層で形成された共通電極と、
前記共通電極にあり、第2の金属層で形成されたゲート電極及びゲートラインと、を備えることを特徴とする、薄膜トランジスタのアレイ基板。 - 電子デバイスであって、請求項11に記載の薄膜トランジスタのアレイ基板を備えることを特徴とする、電子デバイス。
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