JP2015507599A5 - - Google Patents
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- Publication number
- JP2015507599A5 JP2015507599A5 JP2014551373A JP2014551373A JP2015507599A5 JP 2015507599 A5 JP2015507599 A5 JP 2015507599A5 JP 2014551373 A JP2014551373 A JP 2014551373A JP 2014551373 A JP2014551373 A JP 2014551373A JP 2015507599 A5 JP2015507599 A5 JP 2015507599A5
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- substrate
- copper substrate
- gas
- deposition region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 27
- 230000008021 deposition Effects 0.000 claims description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 238000007740 vapor deposition Methods 0.000 claims description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 31
- 229910052802 copper Inorganic materials 0.000 claims 30
- 239000010949 copper Substances 0.000 claims 30
- 238000000034 method Methods 0.000 claims 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 16
- 239000003054 catalyst Substances 0.000 claims 16
- 229910021389 graphene Inorganic materials 0.000 claims 16
- 229930195733 hydrocarbon Natural products 0.000 claims 16
- 150000002430 hydrocarbons Chemical class 0.000 claims 16
- 239000004215 Carbon black (E152) Substances 0.000 claims 15
- 239000013078 crystal Substances 0.000 claims 9
- 239000000203 mixture Substances 0.000 claims 8
- 239000012495 reaction gas Substances 0.000 claims 8
- 238000000137 annealing Methods 0.000 claims 7
- 238000010438 heat treatment Methods 0.000 claims 5
- 239000002356 single layer Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 150000001722 carbon compounds Chemical class 0.000 claims 3
- 239000012530 fluid Substances 0.000 claims 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- 230000006698 induction Effects 0.000 claims 2
- 229920000307 polymer substrate Polymers 0.000 claims 2
- 230000002194 synthesizing effect Effects 0.000 claims 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 1
- 239000001273 butane Substances 0.000 claims 1
- 239000011889 copper foil Substances 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261583638P | 2012-01-06 | 2012-01-06 | |
| US61/583,638 | 2012-01-06 | ||
| PCT/US2013/020378 WO2013103886A1 (en) | 2012-01-06 | 2013-01-04 | High quality large scale single and multilayer graphene production by chemical vapor deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015507599A JP2015507599A (ja) | 2015-03-12 |
| JP2015507599A5 true JP2015507599A5 (https=) | 2018-06-07 |
| JP6355561B2 JP6355561B2 (ja) | 2018-07-11 |
Family
ID=48743087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014551373A Expired - Fee Related JP6355561B2 (ja) | 2012-01-06 | 2013-01-04 | 化学蒸着による高品質の単層および多層グラフェンの大規模な製造 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10023468B2 (https=) |
| JP (1) | JP6355561B2 (https=) |
| KR (1) | KR102088540B1 (https=) |
| CN (1) | CN104159736B (https=) |
| DE (1) | DE112013000502T5 (https=) |
| GB (1) | GB2516372B (https=) |
| WO (1) | WO2013103886A1 (https=) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5885198B2 (ja) * | 2012-02-28 | 2016-03-15 | 国立大学法人九州大学 | グラフェン薄膜の製造方法及びグラフェン薄膜 |
| TWI434949B (zh) * | 2012-03-14 | 2014-04-21 | Nat Univ Tsing Hua | 化學氣相沈積生成石墨烯之方法 |
| US10376845B2 (en) | 2016-04-14 | 2019-08-13 | Lockheed Martin Corporation | Membranes with tunable selectivity |
| US10213746B2 (en) | 2016-04-14 | 2019-02-26 | Lockheed Martin Corporation | Selective interfacial mitigation of graphene defects |
| US10653824B2 (en) | 2012-05-25 | 2020-05-19 | Lockheed Martin Corporation | Two-dimensional materials and uses thereof |
| KR102025365B1 (ko) * | 2012-11-19 | 2019-09-25 | 한화에어로스페이스 주식회사 | 그래핀 합성장치 및 그래핀 합성방법 |
| WO2014110170A1 (en) * | 2013-01-09 | 2014-07-17 | The Regents Of The University Of California | Chemical vapor deposition growth of graphene |
| US9242865B2 (en) | 2013-03-05 | 2016-01-26 | Lockheed Martin Corporation | Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition |
| WO2014164621A1 (en) | 2013-03-12 | 2014-10-09 | Lockheed Martin Corporation | Method for forming filter with uniform aperture size |
| TWI503276B (zh) * | 2013-03-13 | 2015-10-11 | 中央研究院 | 石墨烯薄膜及電晶體的石墨烯通道之製備方法 |
| US9458020B2 (en) * | 2013-05-06 | 2016-10-04 | Centre National De La Recherche Scientifique | Process and device for forming a graphene layer |
| US9572918B2 (en) | 2013-06-21 | 2017-02-21 | Lockheed Martin Corporation | Graphene-based filter for isolating a substance from blood |
| US20150050482A1 (en) * | 2013-08-14 | 2015-02-19 | Rodney S. Ruoff | Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition |
| SG11201606287VA (en) | 2014-01-31 | 2016-08-30 | Lockheed Corp | Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer |
| US10059591B2 (en) | 2014-02-07 | 2018-08-28 | Empire Technology Development Llc | Method of producing graphene from a hydrocarbon gas and liquid metal catalysts |
| US10093072B2 (en) * | 2014-03-18 | 2018-10-09 | Ut-Battelle, Llc | Graphene reinforced materials and related methods of manufacture |
| KR101600782B1 (ko) * | 2014-07-22 | 2016-03-08 | 광주과학기술원 | 다층 그래핀의 제조방법 |
| CN104860297B (zh) * | 2014-12-03 | 2017-01-25 | 北汽福田汽车股份有限公司 | 一种多层石墨烯的制备方法 |
| CN104477903A (zh) * | 2014-12-22 | 2015-04-01 | 上海集成电路研发中心有限公司 | 一种石墨烯薄膜的制备方法 |
| JP6855687B2 (ja) * | 2015-07-29 | 2021-04-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板処理装置のメンテナンス方法及び記憶媒体 |
| KR101860019B1 (ko) * | 2015-07-30 | 2018-05-23 | 한국과학기술연구원 | 그래핀 습식 전사를 위한 장치 및 방법 |
| WO2017023376A1 (en) | 2015-08-05 | 2017-02-09 | Lockheed Martin Corporation | Perforatable sheets of graphene-based material |
| JP2018530499A (ja) | 2015-08-06 | 2018-10-18 | ロッキード・マーチン・コーポレーション | グラフェンのナノ粒子変性及び穿孔 |
| US10533264B1 (en) | 2015-12-02 | 2020-01-14 | General Graphene Corp. | Apparatus for producing graphene and other 2D materials |
| KR20180133430A (ko) | 2016-04-14 | 2018-12-14 | 록히드 마틴 코포레이션 | 결함 형성 또는 힐링의 인 시츄 모니터링 및 제어를 위한 방법 |
| KR20190018410A (ko) | 2016-04-14 | 2019-02-22 | 록히드 마틴 코포레이션 | 흐름 통로들을 갖는 2차원 막 구조들 |
| WO2017180134A1 (en) * | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Methods for in vivo and in vitro use of graphene and other two-dimensional materials |
| CL2016001858A1 (es) * | 2016-07-21 | 2017-02-17 | Univ Técnica Federico Santa Mar+Ia | Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado |
| US11127509B2 (en) | 2016-10-11 | 2021-09-21 | Ultraconductive Copper Company Inc. | Graphene-copper composite structure and manufacturing method |
| US10233566B2 (en) * | 2016-12-29 | 2019-03-19 | Ut-Battelle, Llc | Continuous single crystal growth of graphene |
| CA3202286A1 (en) * | 2017-02-10 | 2018-08-16 | Raymor Industries Inc. | Graphenic carbon nanoparticles having a low polyaromatic hydrocarbon concentration and processes of making same |
| US10828869B2 (en) * | 2017-08-30 | 2020-11-10 | Ultra Conductive Copper Company, Inc. | Graphene-copper structure and manufacturing method |
| KR102177472B1 (ko) | 2017-09-29 | 2020-11-11 | 주식회사 테스 | 그래핀 옥사이드 증착용 소스 및 이를 이용한 그래핀 옥사이드 박막 형성 방법 |
| CN108034930A (zh) * | 2017-11-22 | 2018-05-15 | 华中科技大学 | 一种石墨烯/金属复合材料及三维石墨烯的制备方法 |
| KR102271430B1 (ko) * | 2018-04-27 | 2021-07-01 | 한국과학기술연구원 | 나노홀 그래핀 시트가 코팅된 연료전지용 복합 고분자 전해질막 및 그 제조 방법 |
| KR102547500B1 (ko) * | 2018-05-18 | 2023-06-26 | 성균관대학교산학협력단 | 그래핀 코팅 금속 나노와이어의 제조방법, 이에 의해 제조된 그래핀 코팅 금속 나노와이어를 포함하는 투명전극 및 반도체 소자 |
| US11131511B2 (en) | 2018-05-29 | 2021-09-28 | Cooler Master Co., Ltd. | Heat dissipation plate and method for manufacturing the same |
| CN109336096B (zh) * | 2018-10-19 | 2023-09-26 | 深圳市纳设智能装备有限公司 | 一种开放式连续生长碳纳米材料的设备及制备方法 |
| CN109437169B (zh) * | 2018-12-04 | 2020-06-23 | 中国电子科技集团公司第十三研究所 | 制备超低褶皱密度石墨烯材料的方法 |
| CN109650383A (zh) * | 2018-12-25 | 2019-04-19 | 中国科学院上海微系统与信息技术研究所 | 一种石墨烯的制备方法 |
| CN109537043B (zh) * | 2018-12-28 | 2021-03-12 | 北京大学 | 控制晶面暴露取向的单晶铜箔的制备方法 |
| US12217958B2 (en) * | 2019-03-04 | 2025-02-04 | Samsung Electronics Co., Ltd. | Method of pre-treating substrate and method of directly forming graphene using the same |
| CN110668432B (zh) * | 2019-09-27 | 2021-05-14 | 北京碳垣新材料科技有限公司 | 以金属粉末液相为基底生长石墨烯的装置 |
| CN110803696A (zh) * | 2019-10-10 | 2020-02-18 | 广东墨睿科技有限公司 | 一种利用化学气相沉积法一步制成石墨烯粉末的方法 |
| EP4100362A1 (en) * | 2020-02-03 | 2022-12-14 | CealTech AS | Process and device for large-scale production of graphene |
| CN111624219B (zh) * | 2020-06-19 | 2023-04-25 | 中国科学院宁波材料技术与工程研究所 | 一种测定单晶石墨烯取向的方法 |
| CN111847432B (zh) * | 2020-07-24 | 2023-08-29 | 北京石墨烯研究院 | 大面积多层石墨烯及其制备方法 |
| KR20220136757A (ko) | 2021-04-01 | 2022-10-11 | 삼성전자주식회사 | 나노결정질 그래핀 및 나노결정질 그래핀의 제조방법 |
| US11718526B2 (en) | 2021-12-22 | 2023-08-08 | General Graphene Corporation | Systems and methods for high yield and high throughput production of graphene |
| CN115341191B (zh) * | 2022-09-14 | 2024-01-30 | 广东省科学院新材料研究所 | 表面具石墨烯涂层的材料及其涂层的制备方法以及耐磨件 |
| CN115505859B (zh) * | 2022-11-03 | 2023-06-02 | 中国科学院上海微系统与信息技术研究所 | 一种提高铜基合金衬底上多层石墨烯覆盖率的方法 |
| US12571128B2 (en) | 2023-09-18 | 2026-03-10 | Ut-Battelle, Llc | Chemical vapor deposition growth of hexagonal boron nitride films and nanostructures |
| CN117623291B (zh) * | 2023-12-14 | 2025-10-21 | 北京石墨烯研究院 | 双层石墨烯薄膜及其制备方法 |
| CN118908196A (zh) * | 2024-07-25 | 2024-11-08 | 昆明理工大学 | 一种石墨烯层数的调控方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8252405B2 (en) * | 2005-10-27 | 2012-08-28 | The Board Of Trustees Of The Leland Stanford Junior University | Single-walled carbon nanotubes and methods of preparation thereof |
| KR20090026568A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
| US8535553B2 (en) | 2008-04-14 | 2013-09-17 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
| US8470400B2 (en) | 2009-10-21 | 2013-06-25 | Board Of Regents, The University Of Texas System | Graphene synthesis by chemical vapor deposition |
| US8808810B2 (en) * | 2009-12-15 | 2014-08-19 | Guardian Industries Corp. | Large area deposition of graphene on substrates, and products including the same |
| CN102102220B (zh) | 2009-12-22 | 2014-02-19 | 中国科学院物理研究所 | 金刚石(111)面上的石墨烯制备方法 |
| US8268180B2 (en) | 2010-01-26 | 2012-09-18 | Wisconsin Alumni Research Foundation | Methods of fabricating large-area, semiconducting nanoperforated graphene materials |
| US20110195207A1 (en) * | 2010-02-08 | 2011-08-11 | Sungkyunkwan University Foundation For Corporate Collaboration | Graphene roll-to-roll coating apparatus and graphene roll-to-roll coating method using the same |
| US8673259B2 (en) * | 2010-05-11 | 2014-03-18 | Solarno Inc. | Apparatus and method for substrate and gas heating during chemical vapor deposition nanotube synthesis |
| CN102020263B (zh) | 2010-07-02 | 2013-04-17 | 浙江大学 | 一种合成石墨烯薄膜材料的方法 |
| CN102127750B (zh) | 2011-03-01 | 2012-08-22 | 哈尔滨工程大学 | 一种基于化学沉积法制备石墨烯材料的方法 |
| CN102191476B (zh) | 2011-04-11 | 2014-12-10 | 兰州大学 | 硫掺杂石墨烯薄膜的制备方法 |
| CN102212794B (zh) | 2011-04-13 | 2012-10-10 | 中国科学院上海微系统与信息技术研究所 | 一种基于电镀铜衬底制备大面积石墨烯薄膜的方法 |
| CN102134067B (zh) | 2011-04-18 | 2013-02-06 | 北京大学 | 一种制备单层石墨烯的方法 |
| CN102220566A (zh) | 2011-06-09 | 2011-10-19 | 无锡第六元素高科技发展有限公司 | 一种化学气相沉积制备单层和多层石墨烯的方法 |
| US10100402B2 (en) * | 2011-10-07 | 2018-10-16 | International Business Machines Corporation | Substrate holder for graphene film synthesis |
-
2013
- 2013-01-04 WO PCT/US2013/020378 patent/WO2013103886A1/en not_active Ceased
- 2013-01-04 CN CN201380004699.2A patent/CN104159736B/zh not_active Expired - Fee Related
- 2013-01-04 KR KR1020147018365A patent/KR102088540B1/ko not_active Expired - Fee Related
- 2013-01-04 GB GB1411990.3A patent/GB2516372B/en not_active Expired - Fee Related
- 2013-01-04 US US13/734,823 patent/US10023468B2/en active Active
- 2013-01-04 JP JP2014551373A patent/JP6355561B2/ja not_active Expired - Fee Related
- 2013-01-04 DE DE112013000502.6T patent/DE112013000502T5/de not_active Withdrawn
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