JP6355561B2 - 化学蒸着による高品質の単層および多層グラフェンの大規模な製造 - Google Patents
化学蒸着による高品質の単層および多層グラフェンの大規模な製造 Download PDFInfo
- Publication number
- JP6355561B2 JP6355561B2 JP2014551373A JP2014551373A JP6355561B2 JP 6355561 B2 JP6355561 B2 JP 6355561B2 JP 2014551373 A JP2014551373 A JP 2014551373A JP 2014551373 A JP2014551373 A JP 2014551373A JP 6355561 B2 JP6355561 B2 JP 6355561B2
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- Prior art keywords
- graphene
- vapor deposition
- substrate
- chemical vapor
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 172
- 229910021389 graphene Inorganic materials 0.000 title claims description 154
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 46
- 238000011031 large-scale manufacturing process Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 85
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 78
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 75
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 74
- 239000010949 copper Substances 0.000 claims description 60
- 229910052802 copper Inorganic materials 0.000 claims description 57
- 239000007789 gas Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 44
- 239000003054 catalyst Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 33
- 239000010410 layer Substances 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 22
- 229930195733 hydrocarbon Natural products 0.000 claims description 21
- 150000002430 hydrocarbons Chemical class 0.000 claims description 21
- 239000004215 Carbon black (E152) Substances 0.000 claims description 17
- 239000011889 copper foil Substances 0.000 claims description 17
- 238000007740 vapor deposition Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 13
- 239000002356 single layer Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 150000001722 carbon compounds Chemical class 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001273 butane Substances 0.000 claims description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 2
- 239000001294 propane Substances 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- 239000012530 fluid Substances 0.000 claims 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims 2
- 229920000307 polymer substrate Polymers 0.000 claims 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 description 66
- 239000001257 hydrogen Substances 0.000 description 63
- 238000001878 scanning electron micrograph Methods 0.000 description 38
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 230000006911 nucleation Effects 0.000 description 12
- 238000010899 nucleation Methods 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000001069 Raman spectroscopy Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 241000894007 species Species 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 4
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- 238000006356 dehydrogenation reaction Methods 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 241000519995 Stachys sylvatica Species 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
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- 238000003775 Density Functional Theory Methods 0.000 description 1
- 238000001530 Raman microscopy Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
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- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
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- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010612 desalination reaction Methods 0.000 description 1
- 238000011033 desalting Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 metals including Chemical compound 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/02—Single layer graphene
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/04—Specific amount of layers or specific thickness
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/20—Graphene characterized by its properties
- C01B2204/32—Size or surface area
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261583638P | 2012-01-06 | 2012-01-06 | |
| US61/583,638 | 2012-01-06 | ||
| PCT/US2013/020378 WO2013103886A1 (en) | 2012-01-06 | 2013-01-04 | High quality large scale single and multilayer graphene production by chemical vapor deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015507599A JP2015507599A (ja) | 2015-03-12 |
| JP2015507599A5 JP2015507599A5 (https=) | 2018-06-07 |
| JP6355561B2 true JP6355561B2 (ja) | 2018-07-11 |
Family
ID=48743087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014551373A Expired - Fee Related JP6355561B2 (ja) | 2012-01-06 | 2013-01-04 | 化学蒸着による高品質の単層および多層グラフェンの大規模な製造 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10023468B2 (https=) |
| JP (1) | JP6355561B2 (https=) |
| KR (1) | KR102088540B1 (https=) |
| CN (1) | CN104159736B (https=) |
| DE (1) | DE112013000502T5 (https=) |
| GB (1) | GB2516372B (https=) |
| WO (1) | WO2013103886A1 (https=) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5885198B2 (ja) * | 2012-02-28 | 2016-03-15 | 国立大学法人九州大学 | グラフェン薄膜の製造方法及びグラフェン薄膜 |
| TWI434949B (zh) * | 2012-03-14 | 2014-04-21 | Nat Univ Tsing Hua | 化學氣相沈積生成石墨烯之方法 |
| US10376845B2 (en) | 2016-04-14 | 2019-08-13 | Lockheed Martin Corporation | Membranes with tunable selectivity |
| US10213746B2 (en) | 2016-04-14 | 2019-02-26 | Lockheed Martin Corporation | Selective interfacial mitigation of graphene defects |
| US10653824B2 (en) | 2012-05-25 | 2020-05-19 | Lockheed Martin Corporation | Two-dimensional materials and uses thereof |
| KR102025365B1 (ko) * | 2012-11-19 | 2019-09-25 | 한화에어로스페이스 주식회사 | 그래핀 합성장치 및 그래핀 합성방법 |
| WO2014110170A1 (en) * | 2013-01-09 | 2014-07-17 | The Regents Of The University Of California | Chemical vapor deposition growth of graphene |
| US9242865B2 (en) | 2013-03-05 | 2016-01-26 | Lockheed Martin Corporation | Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition |
| WO2014164621A1 (en) | 2013-03-12 | 2014-10-09 | Lockheed Martin Corporation | Method for forming filter with uniform aperture size |
| TWI503276B (zh) * | 2013-03-13 | 2015-10-11 | 中央研究院 | 石墨烯薄膜及電晶體的石墨烯通道之製備方法 |
| US9458020B2 (en) * | 2013-05-06 | 2016-10-04 | Centre National De La Recherche Scientifique | Process and device for forming a graphene layer |
| US9572918B2 (en) | 2013-06-21 | 2017-02-21 | Lockheed Martin Corporation | Graphene-based filter for isolating a substance from blood |
| US20150050482A1 (en) * | 2013-08-14 | 2015-02-19 | Rodney S. Ruoff | Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition |
| SG11201606287VA (en) | 2014-01-31 | 2016-08-30 | Lockheed Corp | Processes for forming composite structures with a two-dimensional material using a porous, non-sacrificial supporting layer |
| US10059591B2 (en) | 2014-02-07 | 2018-08-28 | Empire Technology Development Llc | Method of producing graphene from a hydrocarbon gas and liquid metal catalysts |
| US10093072B2 (en) * | 2014-03-18 | 2018-10-09 | Ut-Battelle, Llc | Graphene reinforced materials and related methods of manufacture |
| KR101600782B1 (ko) * | 2014-07-22 | 2016-03-08 | 광주과학기술원 | 다층 그래핀의 제조방법 |
| CN104860297B (zh) * | 2014-12-03 | 2017-01-25 | 北汽福田汽车股份有限公司 | 一种多层石墨烯的制备方法 |
| CN104477903A (zh) * | 2014-12-22 | 2015-04-01 | 上海集成电路研发中心有限公司 | 一种石墨烯薄膜的制备方法 |
| JP6855687B2 (ja) * | 2015-07-29 | 2021-04-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板処理装置のメンテナンス方法及び記憶媒体 |
| KR101860019B1 (ko) * | 2015-07-30 | 2018-05-23 | 한국과학기술연구원 | 그래핀 습식 전사를 위한 장치 및 방법 |
| WO2017023376A1 (en) | 2015-08-05 | 2017-02-09 | Lockheed Martin Corporation | Perforatable sheets of graphene-based material |
| JP2018530499A (ja) | 2015-08-06 | 2018-10-18 | ロッキード・マーチン・コーポレーション | グラフェンのナノ粒子変性及び穿孔 |
| US10533264B1 (en) | 2015-12-02 | 2020-01-14 | General Graphene Corp. | Apparatus for producing graphene and other 2D materials |
| KR20180133430A (ko) | 2016-04-14 | 2018-12-14 | 록히드 마틴 코포레이션 | 결함 형성 또는 힐링의 인 시츄 모니터링 및 제어를 위한 방법 |
| KR20190018410A (ko) | 2016-04-14 | 2019-02-22 | 록히드 마틴 코포레이션 | 흐름 통로들을 갖는 2차원 막 구조들 |
| WO2017180134A1 (en) * | 2016-04-14 | 2017-10-19 | Lockheed Martin Corporation | Methods for in vivo and in vitro use of graphene and other two-dimensional materials |
| CL2016001858A1 (es) * | 2016-07-21 | 2017-02-17 | Univ Técnica Federico Santa Mar+Ia | Método y sistema para producir grafeno sobre un sustrato de cobre por deposición de vapores químicos (ap_cvd) modificado |
| US11127509B2 (en) | 2016-10-11 | 2021-09-21 | Ultraconductive Copper Company Inc. | Graphene-copper composite structure and manufacturing method |
| US10233566B2 (en) * | 2016-12-29 | 2019-03-19 | Ut-Battelle, Llc | Continuous single crystal growth of graphene |
| CA3202286A1 (en) * | 2017-02-10 | 2018-08-16 | Raymor Industries Inc. | Graphenic carbon nanoparticles having a low polyaromatic hydrocarbon concentration and processes of making same |
| US10828869B2 (en) * | 2017-08-30 | 2020-11-10 | Ultra Conductive Copper Company, Inc. | Graphene-copper structure and manufacturing method |
| KR102177472B1 (ko) | 2017-09-29 | 2020-11-11 | 주식회사 테스 | 그래핀 옥사이드 증착용 소스 및 이를 이용한 그래핀 옥사이드 박막 형성 방법 |
| CN108034930A (zh) * | 2017-11-22 | 2018-05-15 | 华中科技大学 | 一种石墨烯/金属复合材料及三维石墨烯的制备方法 |
| KR102271430B1 (ko) * | 2018-04-27 | 2021-07-01 | 한국과학기술연구원 | 나노홀 그래핀 시트가 코팅된 연료전지용 복합 고분자 전해질막 및 그 제조 방법 |
| KR102547500B1 (ko) * | 2018-05-18 | 2023-06-26 | 성균관대학교산학협력단 | 그래핀 코팅 금속 나노와이어의 제조방법, 이에 의해 제조된 그래핀 코팅 금속 나노와이어를 포함하는 투명전극 및 반도체 소자 |
| US11131511B2 (en) | 2018-05-29 | 2021-09-28 | Cooler Master Co., Ltd. | Heat dissipation plate and method for manufacturing the same |
| CN109336096B (zh) * | 2018-10-19 | 2023-09-26 | 深圳市纳设智能装备有限公司 | 一种开放式连续生长碳纳米材料的设备及制备方法 |
| CN109437169B (zh) * | 2018-12-04 | 2020-06-23 | 中国电子科技集团公司第十三研究所 | 制备超低褶皱密度石墨烯材料的方法 |
| CN109650383A (zh) * | 2018-12-25 | 2019-04-19 | 中国科学院上海微系统与信息技术研究所 | 一种石墨烯的制备方法 |
| CN109537043B (zh) * | 2018-12-28 | 2021-03-12 | 北京大学 | 控制晶面暴露取向的单晶铜箔的制备方法 |
| US12217958B2 (en) * | 2019-03-04 | 2025-02-04 | Samsung Electronics Co., Ltd. | Method of pre-treating substrate and method of directly forming graphene using the same |
| CN110668432B (zh) * | 2019-09-27 | 2021-05-14 | 北京碳垣新材料科技有限公司 | 以金属粉末液相为基底生长石墨烯的装置 |
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| KR20220136757A (ko) | 2021-04-01 | 2022-10-11 | 삼성전자주식회사 | 나노결정질 그래핀 및 나노결정질 그래핀의 제조방법 |
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| CN115505859B (zh) * | 2022-11-03 | 2023-06-02 | 中国科学院上海微系统与信息技术研究所 | 一种提高铜基合金衬底上多层石墨烯覆盖率的方法 |
| US12571128B2 (en) | 2023-09-18 | 2026-03-10 | Ut-Battelle, Llc | Chemical vapor deposition growth of hexagonal boron nitride films and nanostructures |
| CN117623291B (zh) * | 2023-12-14 | 2025-10-21 | 北京石墨烯研究院 | 双层石墨烯薄膜及其制备方法 |
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| US8252405B2 (en) * | 2005-10-27 | 2012-08-28 | The Board Of Trustees Of The Leland Stanford Junior University | Single-walled carbon nanotubes and methods of preparation thereof |
| KR20090026568A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
| US8535553B2 (en) | 2008-04-14 | 2013-09-17 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
| US8470400B2 (en) | 2009-10-21 | 2013-06-25 | Board Of Regents, The University Of Texas System | Graphene synthesis by chemical vapor deposition |
| US8808810B2 (en) * | 2009-12-15 | 2014-08-19 | Guardian Industries Corp. | Large area deposition of graphene on substrates, and products including the same |
| CN102102220B (zh) | 2009-12-22 | 2014-02-19 | 中国科学院物理研究所 | 金刚石(111)面上的石墨烯制备方法 |
| US8268180B2 (en) | 2010-01-26 | 2012-09-18 | Wisconsin Alumni Research Foundation | Methods of fabricating large-area, semiconducting nanoperforated graphene materials |
| US20110195207A1 (en) * | 2010-02-08 | 2011-08-11 | Sungkyunkwan University Foundation For Corporate Collaboration | Graphene roll-to-roll coating apparatus and graphene roll-to-roll coating method using the same |
| US8673259B2 (en) * | 2010-05-11 | 2014-03-18 | Solarno Inc. | Apparatus and method for substrate and gas heating during chemical vapor deposition nanotube synthesis |
| CN102020263B (zh) | 2010-07-02 | 2013-04-17 | 浙江大学 | 一种合成石墨烯薄膜材料的方法 |
| CN102127750B (zh) | 2011-03-01 | 2012-08-22 | 哈尔滨工程大学 | 一种基于化学沉积法制备石墨烯材料的方法 |
| CN102191476B (zh) | 2011-04-11 | 2014-12-10 | 兰州大学 | 硫掺杂石墨烯薄膜的制备方法 |
| CN102212794B (zh) | 2011-04-13 | 2012-10-10 | 中国科学院上海微系统与信息技术研究所 | 一种基于电镀铜衬底制备大面积石墨烯薄膜的方法 |
| CN102134067B (zh) | 2011-04-18 | 2013-02-06 | 北京大学 | 一种制备单层石墨烯的方法 |
| CN102220566A (zh) | 2011-06-09 | 2011-10-19 | 无锡第六元素高科技发展有限公司 | 一种化学气相沉积制备单层和多层石墨烯的方法 |
| US10100402B2 (en) * | 2011-10-07 | 2018-10-16 | International Business Machines Corporation | Substrate holder for graphene film synthesis |
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| US20130174968A1 (en) | 2013-07-11 |
| GB2516372A (en) | 2015-01-21 |
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| KR20140128952A (ko) | 2014-11-06 |
| CN104159736B (zh) | 2016-11-09 |
| GB2516372B (en) | 2021-01-13 |
| WO2013103886A1 (en) | 2013-07-11 |
| JP2015507599A (ja) | 2015-03-12 |
| GB201411990D0 (en) | 2014-08-20 |
| DE112013000502T5 (de) | 2015-01-08 |
| US10023468B2 (en) | 2018-07-17 |
| KR102088540B1 (ko) | 2020-03-12 |
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