JP2015507363A5 - - Google Patents
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- Publication number
- JP2015507363A5 JP2015507363A5 JP2014553383A JP2014553383A JP2015507363A5 JP 2015507363 A5 JP2015507363 A5 JP 2015507363A5 JP 2014553383 A JP2014553383 A JP 2014553383A JP 2014553383 A JP2014553383 A JP 2014553383A JP 2015507363 A5 JP2015507363 A5 JP 2015507363A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- layer
- amorphous carbon
- hydrocarbon source
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000010410 layer Substances 0.000 claims 27
- 238000000034 method Methods 0.000 claims 20
- 239000004215 Carbon black (E152) Substances 0.000 claims 12
- 229930195733 hydrocarbon Natural products 0.000 claims 12
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 9
- 150000002430 hydrocarbons Chemical class 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 7
- -1 nitrogen-containing hydrocarbon Chemical class 0.000 claims 7
- 125000006850 spacer group Chemical group 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 6
- 239000002194 amorphous carbon material Substances 0.000 claims 6
- 239000011241 protective layer Substances 0.000 claims 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 5
- 229920005591 polysilicon Polymers 0.000 claims 5
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims 4
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 claims 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 2
- 239000005977 Ethylene Substances 0.000 claims 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims 2
- 239000001273 butane Substances 0.000 claims 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000001294 propane Substances 0.000 claims 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 2
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000003085 diluting agent Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/354,129 | 2012-01-19 | ||
| US13/354,129 US20130189845A1 (en) | 2012-01-19 | 2012-01-19 | Conformal amorphous carbon for spacer and spacer protection applications |
| PCT/US2013/021769 WO2013109645A1 (en) | 2012-01-19 | 2013-01-16 | Conformal amorphous carbon for spacer and spacer protection applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015507363A JP2015507363A (ja) | 2015-03-05 |
| JP2015507363A5 true JP2015507363A5 (https=) | 2016-03-03 |
Family
ID=48797563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014553383A Pending JP2015507363A (ja) | 2012-01-19 | 2013-01-16 | スペーサおよびスペーサ保護用途のための共形アモルファスカーボン |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US20130189845A1 (https=) |
| JP (1) | JP2015507363A (https=) |
| KR (1) | KR20140115353A (https=) |
| TW (1) | TW201339349A (https=) |
| WO (1) | WO2013109645A1 (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2012026286A1 (ja) * | 2010-08-27 | 2012-03-01 | 東京エレクトロン株式会社 | エッチング方法、基板処理方法、パターン形成方法、半導体素子の製造方法、および半導体素子 |
| KR20130015145A (ko) * | 2011-08-02 | 2013-02-13 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
| JP2014072226A (ja) * | 2012-09-27 | 2014-04-21 | Tokyo Electron Ltd | パターン形成方法 |
| US8828839B2 (en) * | 2013-01-29 | 2014-09-09 | GlobalFoundries, Inc. | Methods for fabricating electrically-isolated finFET semiconductor devices |
| US9721784B2 (en) | 2013-03-15 | 2017-08-01 | Applied Materials, Inc. | Ultra-conformal carbon film deposition |
| US9064813B2 (en) * | 2013-04-19 | 2015-06-23 | International Business Machines Corporation | Trench patterning with block first sidewall image transfer |
| CN104425225A (zh) * | 2013-09-04 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 三重图形的形成方法 |
| US9698015B2 (en) | 2013-10-21 | 2017-07-04 | Applied Materials, Inc. | Method for patterning a semiconductor substrate |
| US9159579B2 (en) * | 2013-10-25 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography using multilayer spacer for reduced spacer footing |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| TWI555082B (zh) * | 2015-05-15 | 2016-10-21 | 力晶科技股份有限公司 | 圖案化方法 |
| US9484202B1 (en) * | 2015-06-03 | 2016-11-01 | Applied Materials, Inc. | Apparatus and methods for spacer deposition and selective removal in an advanced patterning process |
| US9659771B2 (en) | 2015-06-11 | 2017-05-23 | Applied Materials, Inc. | Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning |
| US10629435B2 (en) * | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
| US10074543B2 (en) * | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
| WO2018052760A1 (en) | 2016-09-13 | 2018-03-22 | Applied Materials, Inc. | Borane mediated dehydrogenation process from silane and alkylsilane species for spacer and hardmask application |
| US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
| US9935012B1 (en) | 2016-11-28 | 2018-04-03 | Globalfoundries Inc. | Methods for forming different shapes in different regions of the same layer |
| US10276379B2 (en) * | 2017-04-07 | 2019-04-30 | Applied Materials, Inc. | Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide |
| US10304728B2 (en) * | 2017-05-01 | 2019-05-28 | Advanced Micro Devices, Inc. | Double spacer immersion lithography triple patterning flow and method |
| US20180323061A1 (en) * | 2017-05-03 | 2018-11-08 | Tokyo Electron Limited | Self-Aligned Triple Patterning Process Utilizing Organic Spacers |
| US10593543B2 (en) | 2017-06-05 | 2020-03-17 | Applied Materials, Inc. | Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth |
| KR102509390B1 (ko) * | 2017-07-24 | 2023-03-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법 |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US10096475B1 (en) * | 2017-11-17 | 2018-10-09 | Lam Research Corporation | System and method for depositing a homogenous interface for PECVD metal-doped carbon hardmasks |
| US10658174B2 (en) | 2017-11-21 | 2020-05-19 | Lam Research Corporation | Atomic layer deposition and etch for reducing roughness |
| US10515815B2 (en) | 2017-11-21 | 2019-12-24 | Lam Research Corporation | Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation |
| US10734238B2 (en) | 2017-11-21 | 2020-08-04 | Lam Research Corporation | Atomic layer deposition and etch in a single plasma chamber for critical dimension control |
| US10446394B2 (en) * | 2018-01-26 | 2019-10-15 | Lam Research Corporation | Spacer profile control using atomic layer deposition in a multiple patterning process |
| US11404275B2 (en) | 2018-03-02 | 2022-08-02 | Lam Research Corporation | Selective deposition using hydrolysis |
| KR20200140388A (ko) * | 2018-05-03 | 2020-12-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착 |
| KR102147149B1 (ko) * | 2018-06-11 | 2020-08-24 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조 방법 |
| JP7180847B2 (ja) | 2018-12-18 | 2022-11-30 | 東京エレクトロン株式会社 | カーボンハードマスク、成膜装置、および成膜方法 |
| US11315787B2 (en) | 2019-04-17 | 2022-04-26 | Applied Materials, Inc. | Multiple spacer patterning schemes |
| US11145509B2 (en) * | 2019-05-24 | 2021-10-12 | Applied Materials, Inc. | Method for forming and patterning a layer and/or substrate |
| WO2020247977A1 (en) | 2019-06-04 | 2020-12-10 | Lam Research Corporation | Polymerization protective liner for reactive ion etch in patterning |
| WO2021025874A1 (en) | 2019-08-06 | 2021-02-11 | Lam Research Corporation | Thermal atomic layer deposition of silicon-containing films |
| JP7357528B2 (ja) * | 2019-12-06 | 2023-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| CN115803474A (zh) | 2020-07-23 | 2023-03-14 | 朗姆研究公司 | 具有受控膜性质和高沉积速率的保形热cvd |
| KR20230043795A (ko) | 2020-07-28 | 2023-03-31 | 램 리써치 코포레이션 | 실리콘-함유 막들의 불순물 감소 |
| CN113078105B (zh) * | 2021-03-29 | 2022-07-05 | 长鑫存储技术有限公司 | 掩膜结构的制备方法、半导体结构及其制备方法 |
| WO2023283144A1 (en) | 2021-07-09 | 2023-01-12 | Lam Research Corporation | Plasma enhanced atomic layer deposition of silicon-containing films |
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| EP0264104B1 (en) * | 1986-10-14 | 1995-12-27 | Minolta Co., Ltd. | Electrophotographic photosensitive member having an overcoat layer |
| JPH07131009A (ja) * | 1993-11-04 | 1995-05-19 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPH07161657A (ja) * | 1993-12-08 | 1995-06-23 | Fujitsu Ltd | パターン形成方法 |
| US6596599B1 (en) * | 2001-07-16 | 2003-07-22 | Taiwan Semiconductor Manufacturing Company | Gate stack for high performance sub-micron CMOS devices |
| US6500756B1 (en) * | 2002-06-28 | 2002-12-31 | Advanced Micro Devices, Inc. | Method of forming sub-lithographic spaces between polysilicon lines |
| US6893967B1 (en) * | 2004-01-13 | 2005-05-17 | Advanced Micro Devices, Inc. | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials |
| US7390746B2 (en) * | 2005-03-15 | 2008-06-24 | Micron Technology, Inc. | Multiple deposition for integration of spacers in pitch multiplication process |
| US8852851B2 (en) * | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
| US7560784B2 (en) * | 2007-02-01 | 2009-07-14 | International Business Machines Corporation | Fin PIN diode |
| CN102203921A (zh) | 2007-06-15 | 2011-09-28 | 应用材料股份有限公司 | 在基板间隙中形成氧化物牺牲衬层的氧气sacvd方法 |
| KR100955265B1 (ko) * | 2007-08-31 | 2010-04-30 | 주식회사 하이닉스반도체 | 반도체 소자의 미세패턴 형성방법 |
| JP2009130035A (ja) * | 2007-11-21 | 2009-06-11 | Toshiba Corp | 半導体装置の製造方法 |
| US20090311634A1 (en) * | 2008-06-11 | 2009-12-17 | Tokyo Electron Limited | Method of double patterning using sacrificial structure |
| US7709396B2 (en) * | 2008-09-19 | 2010-05-04 | Applied Materials, Inc. | Integral patterning of large features along with array using spacer mask patterning process flow |
| CN102187432B (zh) * | 2008-10-14 | 2013-07-31 | 应用材料公司 | 利用等离子体增强化学气相沉积来沉积共形无定形碳膜层的方法 |
| US8084310B2 (en) | 2008-10-23 | 2011-12-27 | Applied Materials, Inc. | Self-aligned multi-patterning for advanced critical dimension contacts |
| US7935464B2 (en) | 2008-10-30 | 2011-05-03 | Applied Materials, Inc. | System and method for self-aligned dual patterning |
| US7972959B2 (en) | 2008-12-01 | 2011-07-05 | Applied Materials, Inc. | Self aligned double patterning flow with non-sacrificial features |
| US7842622B1 (en) | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
| WO2010134176A1 (ja) * | 2009-05-20 | 2010-11-25 | 株式会社 東芝 | 凹凸パターン形成方法 |
| US8404592B2 (en) * | 2009-07-27 | 2013-03-26 | GlobalFoundries, Inc. | Methods for fabricating FinFET semiconductor devices using L-shaped spacers |
| US8242560B2 (en) * | 2010-01-15 | 2012-08-14 | International Business Machines Corporation | FinFET with thin gate dielectric layer |
| US20110244142A1 (en) * | 2010-03-30 | 2011-10-06 | Applied Materials, Inc. | Nitrogen doped amorphous carbon hardmask |
| JP4982582B2 (ja) * | 2010-03-31 | 2012-07-25 | 株式会社東芝 | マスクの製造方法 |
| US20130109198A1 (en) * | 2011-10-26 | 2013-05-02 | American Air Liquide, Inc. | High carbon content molecules for amorphous carbon deposition |
-
2012
- 2012-01-19 US US13/354,129 patent/US20130189845A1/en not_active Abandoned
-
2013
- 2013-01-16 JP JP2014553383A patent/JP2015507363A/ja active Pending
- 2013-01-16 KR KR1020147022970A patent/KR20140115353A/ko not_active Ceased
- 2013-01-16 WO PCT/US2013/021769 patent/WO2013109645A1/en not_active Ceased
- 2013-01-16 US US14/371,989 patent/US20140349490A1/en not_active Abandoned
- 2013-01-18 TW TW102102025A patent/TW201339349A/zh unknown
-
2015
- 2015-06-11 US US14/736,848 patent/US9570303B2/en active Active
-
2017
- 2017-02-14 US US15/432,605 patent/US10236182B2/en active Active
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