JP2015507363A - スペーサおよびスペーサ保護用途のための共形アモルファスカーボン - Google Patents

スペーサおよびスペーサ保護用途のための共形アモルファスカーボン Download PDF

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JP2015507363A
JP2015507363A JP2014553383A JP2014553383A JP2015507363A JP 2015507363 A JP2015507363 A JP 2015507363A JP 2014553383 A JP2014553383 A JP 2014553383A JP 2014553383 A JP2014553383 A JP 2014553383A JP 2015507363 A JP2015507363 A JP 2015507363A
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nitrogen
substrate
amorphous carbon
layer
patterned
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JP2015507363A5 (https=
Inventor
ソン ジン キム，
ソン ジン キム，
ディーネッシュ パディ，
ディーネッシュ パディ，
ソン ヒョン ホン，
ソン ヒョン ホン，
ボク ホーエン キム，
ボク ホーエン キム，
デレク アール． ウィッティ，
デレク アール． ウィッティ，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014553383A 2012-01-19 2013-01-16 スペーサおよびスペーサ保護用途のための共形アモルファスカーボン Pending JP2015507363A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/354,129 2012-01-19
US13/354,129 US20130189845A1 (en) 2012-01-19 2012-01-19 Conformal amorphous carbon for spacer and spacer protection applications
PCT/US2013/021769 WO2013109645A1 (en) 2012-01-19 2013-01-16 Conformal amorphous carbon for spacer and spacer protection applications

Publications (2)

Publication Number Publication Date
JP2015507363A true JP2015507363A (ja) 2015-03-05
JP2015507363A5 JP2015507363A5 (https=) 2016-03-03

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JP2014553383A Pending JP2015507363A (ja) 2012-01-19 2013-01-16 スペーサおよびスペーサ保護用途のための共形アモルファスカーボン

Country Status (5)

Country Link
US (4) US20130189845A1 (https=)
JP (1) JP2015507363A (https=)
KR (1) KR20140115353A (https=)
TW (1) TW201339349A (https=)
WO (1) WO2013109645A1 (https=)

Cited By (3)

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JP2018516463A (ja) * 2015-06-03 2018-06-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 先進的なパターニングプロセスにおけるスペーサ堆積および選択的除去のための装置および方法
JP2020519938A (ja) * 2017-05-01 2020-07-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｍｉｃｒｏ Ｄｅｖｉｃｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ダブルスペーサ液浸リソグラフィトリプルパターニングのフロー及び方法
KR20210090698A (ko) 2018-12-18 2021-07-20 도쿄엘렉트론가부시키가이샤 카본 하드마스크, 성막 장치 및 성막 방법

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KR20130015145A (ko) * 2011-08-02 2013-02-13 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
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US9064813B2 (en) * 2013-04-19 2015-06-23 International Business Machines Corporation Trench patterning with block first sidewall image transfer
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KR102509390B1 (ko) * 2017-07-24 2023-03-14 어플라이드 머티어리얼스, 인코포레이티드 산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법
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US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
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JP7357528B2 (ja) * 2019-12-06 2023-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング装置
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KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018516463A (ja) * 2015-06-03 2018-06-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 先進的なパターニングプロセスにおけるスペーサ堆積および選択的除去のための装置および方法
JP2020519938A (ja) * 2017-05-01 2020-07-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｍｉｃｒｏ Ｄｅｖｉｃｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ダブルスペーサ液浸リソグラフィトリプルパターニングのフロー及び方法
JP7157081B2 (ja) 2017-05-01 2022-10-19 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ダブルスペーサ液浸リソグラフィトリプルパターニングのフロー及び方法
KR20210090698A (ko) 2018-12-18 2021-07-20 도쿄엘렉트론가부시키가이샤 카본 하드마스크, 성막 장치 및 성막 방법
US11993849B2 (en) 2018-12-18 2024-05-28 Tokyo Electron Limited Carbon hard mask, film forming apparatus, and film forming method

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TW201339349A (zh) 2013-10-01
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US20130189845A1 (en) 2013-07-25
US9570303B2 (en) 2017-02-14
US20140349490A1 (en) 2014-11-27
US10236182B2 (en) 2019-03-19
US20150279676A1 (en) 2015-10-01
US20170170015A1 (en) 2017-06-15

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