JP2015507599A5 - - Google Patents

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JP2015507599A5
JP2015507599A5 JP2014551373A JP2014551373A JP2015507599A5 JP 2015507599 A5 JP2015507599 A5 JP 2015507599A5 JP 2014551373 A JP2014551373 A JP 2014551373A JP 2014551373 A JP2014551373 A JP 2014551373A JP 2015507599 A5 JP2015507599 A5 JP 2015507599A5
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vapor deposition
substrate
copper substrate
gas
deposition region
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JP2014551373A
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JP2015507599A (ja
JP6355561B2 (ja
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Priority claimed from PCT/US2013/020378 external-priority patent/WO2013103886A1/en
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JP2014551373A 2012-01-06 2013-01-04 化学蒸着による高品質の単層および多層グラフェンの大規模な製造 Expired - Fee Related JP6355561B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261583638P 2012-01-06 2012-01-06
US61/583,638 2012-01-06
PCT/US2013/020378 WO2013103886A1 (en) 2012-01-06 2013-01-04 High quality large scale single and multilayer graphene production by chemical vapor deposition

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JP2015507599A JP2015507599A (ja) 2015-03-12
JP2015507599A5 true JP2015507599A5 (enExample) 2018-06-07
JP6355561B2 JP6355561B2 (ja) 2018-07-11

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JP2014551373A Expired - Fee Related JP6355561B2 (ja) 2012-01-06 2013-01-04 化学蒸着による高品質の単層および多層グラフェンの大規模な製造

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US (1) US10023468B2 (enExample)
JP (1) JP6355561B2 (enExample)
KR (1) KR102088540B1 (enExample)
CN (1) CN104159736B (enExample)
DE (1) DE112013000502T5 (enExample)
GB (1) GB2516372B (enExample)
WO (1) WO2013103886A1 (enExample)

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CN110803696A (zh) * 2019-10-10 2020-02-18 广东墨睿科技有限公司 一种利用化学气相沉积法一步制成石墨烯粉末的方法
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CN111624219B (zh) * 2020-06-19 2023-04-25 中国科学院宁波材料技术与工程研究所 一种测定单晶石墨烯取向的方法
CN111847432B (zh) * 2020-07-24 2023-08-29 北京石墨烯研究院 大面积多层石墨烯及其制备方法
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