JP2015185609A5 - - Google Patents
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- Publication number
- JP2015185609A5 JP2015185609A5 JP2014059077A JP2014059077A JP2015185609A5 JP 2015185609 A5 JP2015185609 A5 JP 2015185609A5 JP 2014059077 A JP2014059077 A JP 2014059077A JP 2014059077 A JP2014059077 A JP 2014059077A JP 2015185609 A5 JP2015185609 A5 JP 2015185609A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- semiconductor substrate
- height
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000005498 polishing Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014059077A JP6362373B2 (ja) | 2014-03-20 | 2014-03-20 | 光電変換装置の製造方法 |
| US14/645,592 US9711563B2 (en) | 2014-03-20 | 2015-03-12 | Method of manufacturing semiconductor device having an insulating film in trenches of a semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014059077A JP6362373B2 (ja) | 2014-03-20 | 2014-03-20 | 光電変換装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015185609A JP2015185609A (ja) | 2015-10-22 |
| JP2015185609A5 true JP2015185609A5 (enExample) | 2017-03-30 |
| JP6362373B2 JP6362373B2 (ja) | 2018-07-25 |
Family
ID=54142872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014059077A Active JP6362373B2 (ja) | 2014-03-20 | 2014-03-20 | 光電変換装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9711563B2 (enExample) |
| JP (1) | JP6362373B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6569549B2 (ja) * | 2015-05-01 | 2019-09-04 | セイコーエプソン株式会社 | 電気光学装置、電子機器、及び電気光学装置の製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0155874B1 (ko) * | 1995-08-31 | 1998-12-01 | 김광호 | 반도체장치의 평탄화방법 및 이를 이용한 소자분리방법 |
| JPH11312730A (ja) * | 1998-04-28 | 1999-11-09 | Sony Corp | 半導体装置の製造方法 |
| JP2003142674A (ja) | 2001-11-07 | 2003-05-16 | Toshiba Corp | Ｍｏｓ型固体撮像装置 |
| US20040135198A1 (en) * | 2002-07-23 | 2004-07-15 | Kabushiki Kaisha Toshiba | Semiconductor device and method of fabricating the same, nonvolatile semiconductor memory and method of fabricating the same, and electronic apparatus including nonvolatile semiconductor memory |
| JP4947931B2 (ja) * | 2004-08-12 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN100573870C (zh) * | 2004-08-12 | 2009-12-23 | 株式会社瑞萨科技 | 双浅沟绝缘半导体装置及其制造方法 |
| JP2006351747A (ja) * | 2005-06-15 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2007109966A (ja) | 2005-10-14 | 2007-04-26 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP2007207828A (ja) * | 2006-01-31 | 2007-08-16 | Matsushita Electric Ind Co Ltd | 固体撮像装置の製造方法 |
| JP2009117681A (ja) * | 2007-11-08 | 2009-05-28 | Panasonic Corp | 半導体装置の製造方法および固体撮像装置の製造方法 |
| JP2010199358A (ja) * | 2009-02-26 | 2010-09-09 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| JP5704848B2 (ja) * | 2010-06-30 | 2015-04-22 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| US8722509B2 (en) * | 2011-08-05 | 2014-05-13 | United Microelectronics Corp. | Method of forming trench isolation |
| JP5991739B2 (ja) * | 2012-06-15 | 2016-09-14 | キヤノン株式会社 | 固体撮像装置およびその製造方法、ならびにカメラ |
| US8703577B1 (en) * | 2012-12-17 | 2014-04-22 | United Microelectronics Corp. | Method for fabrication deep trench isolation structure |
| US9123612B2 (en) * | 2013-10-31 | 2015-09-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
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2014
- 2014-03-20 JP JP2014059077A patent/JP6362373B2/ja active Active
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2015
- 2015-03-12 US US14/645,592 patent/US9711563B2/en not_active Expired - Fee Related