JP6362373B2 - 光電変換装置の製造方法 - Google Patents

光電変換装置の製造方法 Download PDF

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Publication number
JP6362373B2
JP6362373B2 JP2014059077A JP2014059077A JP6362373B2 JP 6362373 B2 JP6362373 B2 JP 6362373B2 JP 2014059077 A JP2014059077 A JP 2014059077A JP 2014059077 A JP2014059077 A JP 2014059077A JP 6362373 B2 JP6362373 B2 JP 6362373B2
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JP
Japan
Prior art keywords
film
region
semiconductor substrate
height
trench
Prior art date
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Active
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JP2014059077A
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English (en)
Japanese (ja)
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JP2015185609A5 (enExample
JP2015185609A (ja
Inventor
剛士 岡部
剛士 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014059077A priority Critical patent/JP6362373B2/ja
Priority to US14/645,592 priority patent/US9711563B2/en
Publication of JP2015185609A publication Critical patent/JP2015185609A/ja
Publication of JP2015185609A5 publication Critical patent/JP2015185609A5/ja
Application granted granted Critical
Publication of JP6362373B2 publication Critical patent/JP6362373B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2014059077A 2014-03-20 2014-03-20 光電変換装置の製造方法 Active JP6362373B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014059077A JP6362373B2 (ja) 2014-03-20 2014-03-20 光電変換装置の製造方法
US14/645,592 US9711563B2 (en) 2014-03-20 2015-03-12 Method of manufacturing semiconductor device having an insulating film in trenches of a semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014059077A JP6362373B2 (ja) 2014-03-20 2014-03-20 光電変換装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015185609A JP2015185609A (ja) 2015-10-22
JP2015185609A5 JP2015185609A5 (enExample) 2017-03-30
JP6362373B2 true JP6362373B2 (ja) 2018-07-25

Family

ID=54142872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014059077A Active JP6362373B2 (ja) 2014-03-20 2014-03-20 光電変換装置の製造方法

Country Status (2)

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US (1) US9711563B2 (enExample)
JP (1) JP6362373B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6569549B2 (ja) * 2015-05-01 2019-09-04 セイコーエプソン株式会社 電気光学装置、電子機器、及び電気光学装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0155874B1 (ko) * 1995-08-31 1998-12-01 김광호 반도체장치의 평탄화방법 및 이를 이용한 소자분리방법
JPH11312730A (ja) * 1998-04-28 1999-11-09 Sony Corp 半導体装置の製造方法
JP2003142674A (ja) 2001-11-07 2003-05-16 Toshiba Corp Ｍｏｓ型固体撮像装置
US20040135198A1 (en) * 2002-07-23 2004-07-15 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same, nonvolatile semiconductor memory and method of fabricating the same, and electronic apparatus including nonvolatile semiconductor memory
JP4947931B2 (ja) * 2004-08-12 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置
CN100573870C (zh) * 2004-08-12 2009-12-23 株式会社瑞萨科技 双浅沟绝缘半导体装置及其制造方法
JP2006351747A (ja) * 2005-06-15 2006-12-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007109966A (ja) 2005-10-14 2007-04-26 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007207828A (ja) * 2006-01-31 2007-08-16 Matsushita Electric Ind Co Ltd 固体撮像装置の製造方法
JP2009117681A (ja) * 2007-11-08 2009-05-28 Panasonic Corp 半導体装置の製造方法および固体撮像装置の製造方法
JP2010199358A (ja) * 2009-02-26 2010-09-09 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP5704848B2 (ja) * 2010-06-30 2015-04-22 キヤノン株式会社 固体撮像装置およびカメラ
US8722509B2 (en) * 2011-08-05 2014-05-13 United Microelectronics Corp. Method of forming trench isolation
JP5991739B2 (ja) * 2012-06-15 2016-09-14 キヤノン株式会社 固体撮像装置およびその製造方法、ならびにカメラ
US8703577B1 (en) * 2012-12-17 2014-04-22 United Microelectronics Corp. Method for fabrication deep trench isolation structure
US9123612B2 (en) * 2013-10-31 2015-09-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof

Also Published As

Publication number Publication date
US9711563B2 (en) 2017-07-18
US20150270309A1 (en) 2015-09-24
JP2015185609A (ja) 2015-10-22

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