JP2015149422A5 - - Google Patents

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JP2015149422A5
JP2015149422A5 JP2014022155A JP2014022155A JP2015149422A5 JP 2015149422 A5 JP2015149422 A5 JP 2015149422A5 JP 2014022155 A JP2014022155 A JP 2014022155A JP 2014022155 A JP2014022155 A JP 2014022155A JP 2015149422 A5 JP2015149422 A5 JP 2015149422A5
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Japan
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image
light
image sensor
thickness
inp
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JP2014022155A
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Japanese (ja)
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JP6295693B2 (ja
JP2015149422A (ja
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Priority claimed from JP2014022155A external-priority patent/JP6295693B2/ja
Priority to US14/609,601 priority patent/US20150228685A1/en
Publication of JP2015149422A publication Critical patent/JP2015149422A/ja
Publication of JP2015149422A5 publication Critical patent/JP2015149422A5/ja
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Priority to US16/711,084 priority patent/US11296245B2/en
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JP2014022155A 2014-02-07 2014-02-07 撮像装置 Active JP6295693B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014022155A JP6295693B2 (ja) 2014-02-07 2014-02-07 撮像装置
US14/609,601 US20150228685A1 (en) 2014-02-07 2015-01-30 Light receiving element, image capturing element including the light receiving element and image capturing apparatus including the image capturing element
US16/711,084 US11296245B2 (en) 2014-02-07 2019-12-11 Image capturing apparatus including a compound semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014022155A JP6295693B2 (ja) 2014-02-07 2014-02-07 撮像装置

Related Child Applications (1)

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JP2018027622A Division JP6642599B2 (ja) 2018-02-20 2018-02-20 受光素子、撮像素子及び撮像装置

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JP2015149422A JP2015149422A (ja) 2015-08-20
JP2015149422A5 true JP2015149422A5 (enExample) 2016-03-31
JP6295693B2 JP6295693B2 (ja) 2018-03-20

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US (2) US20150228685A1 (enExample)
JP (1) JP6295693B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6530664B2 (ja) 2015-07-22 2019-06-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置及びその製造方法
WO2017061273A1 (ja) * 2015-10-05 2017-04-13 ソニー株式会社 撮像装置、製造方法
EP3404715B1 (en) * 2016-01-13 2022-03-02 Sony Group Corporation Light receiving element, method for manufacturing light receiving element, image capturing element and electronic device
JP6903896B2 (ja) * 2016-01-13 2021-07-14 ソニーグループ株式会社 受光素子の製造方法
JP6849314B2 (ja) * 2016-03-30 2021-03-24 富士フイルム株式会社 組成物、膜、光学フィルタ、積層体、固体撮像素子、画像表示装置および赤外線センサ
US10818718B2 (en) 2016-07-20 2020-10-27 Sony Corporation Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus
JP7007088B2 (ja) * 2016-12-07 2022-01-24 ソニーセミコンダクタソリューションズ株式会社 受光素子、撮像素子および電子機器
DE112017006908T5 (de) * 2017-01-24 2019-10-02 Sony Semiconductor Solutions Corporation Lichtempfangselement, verfahren zum produzieren eines lichtempfangselements, bildgebungselement und elektronische vorrichtung
EP3355082B1 (en) * 2017-01-27 2020-04-15 Detection Technology Oy Radiation detector panel assembly structure
CN107424246B (zh) * 2017-04-11 2021-04-20 京东方科技集团股份有限公司 可见光通信密码解锁装置及方法
CN110021678B (zh) * 2018-01-10 2021-06-04 中国科学院苏州纳米技术与纳米仿生研究所 红外光探测器及其制备方法
WO2019146299A1 (ja) * 2018-01-23 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US12074178B2 (en) * 2018-12-28 2024-08-27 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
CN111599879B (zh) * 2020-06-11 2022-05-31 武汉华星光电技术有限公司 Pin感光器件及其制作方法、及显示面板
KR102864088B1 (ko) * 2020-09-28 2025-09-23 삼성전자주식회사 광 검출 소자 및 그 제조방법
JP2022115678A (ja) * 2021-01-28 2022-08-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JPWO2023127110A1 (enExample) * 2021-12-28 2023-07-06
WO2025017886A1 (ja) * 2023-07-19 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
JPH03104287A (ja) 1989-09-19 1991-05-01 Fujitsu Ltd 半導体受光素子の製造方法
JP3014006B2 (ja) * 1990-11-30 2000-02-28 富士通株式会社 半導体装置
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
GB9226890D0 (en) * 1992-12-23 1993-02-17 Philips Electronics Uk Ltd An imaging device
JPH07254726A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体光検出器
US5726462A (en) * 1996-02-07 1998-03-10 Sandia Corporation Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
US5684308A (en) * 1996-02-15 1997-11-04 Sandia Corporation CMOS-compatible InP/InGaAs digital photoreceiver
US5780867A (en) * 1996-03-07 1998-07-14 Sandia Corporation Broadband light-emitting diode
JPH09331058A (ja) 1996-06-13 1997-12-22 Sony Corp 固体撮像素子
JPH10294478A (ja) * 1997-04-18 1998-11-04 Sharp Corp 光電変換素子
AU4461000A (en) 1999-04-19 2000-11-02 Government of the United States of America as represented by the Administrator of the National Aeronautics and Space Administration (NASA), The Msm optical detector with an active region heterojunction forming a two-dimensional electron gas
JP2001332758A (ja) * 2000-05-18 2001-11-30 Fujitsu Ltd 半導体光検出器および半導体光メモリ装置
US6586718B2 (en) * 2000-05-25 2003-07-01 Matsushita Electric Industrial Co., Ltd. Photodetector and method for fabricating the same
JP2002050786A (ja) * 2000-05-25 2002-02-15 Matsushita Electric Ind Co Ltd 受光素子およびその製造方法
JP2002203983A (ja) * 2000-10-27 2002-07-19 Oki Electric Ind Co Ltd 受光素子
JP2003188405A (ja) * 2001-12-20 2003-07-04 Osaka Gas Co Ltd 紫外線受光素子
KR100505536B1 (ko) * 2002-03-27 2005-08-04 스미토모 긴조쿠 고잔 가부시키가이샤 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스
JP4556407B2 (ja) * 2002-10-04 2010-10-06 住友金属鉱山株式会社 酸化物透明電極膜とその製造方法、透明導電性基材、太陽電池および光検出素子
US7560750B2 (en) * 2003-06-26 2009-07-14 Kyocera Corporation Solar cell device
JP2005347475A (ja) * 2004-06-02 2005-12-15 Fuji Photo Film Co Ltd 固体撮像素子、及び固体撮像システム
JP4211696B2 (ja) 2004-06-30 2009-01-21 ソニー株式会社 固体撮像装置の製造方法
JP4507876B2 (ja) * 2004-12-22 2010-07-21 ソニー株式会社 固体撮像素子
JP4738999B2 (ja) * 2005-12-06 2011-08-03 豊田合成株式会社 半導体光素子の製造方法
WO2007069651A1 (ja) * 2005-12-14 2007-06-21 Showa Denko K.K. 窒化ガリウム系化合物半導体発光素子及びその製造方法
CA2646692C (en) * 2006-03-21 2014-06-17 Shimon Maimon Reduced dark current photodetector
JP2007266251A (ja) 2006-03-28 2007-10-11 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
GB0606540D0 (en) * 2006-03-31 2006-05-10 Univ London Photodetector
US20100182800A1 (en) * 2006-12-15 2010-07-22 Reiko Taniguchi Linear light-emitting device
JP5234312B2 (ja) 2007-10-19 2013-07-10 住友電気工業株式会社 撮像装置
JP4785827B2 (ja) * 2007-12-27 2011-10-05 三洋電機株式会社 太陽電池モジュール及びその製造方法
JP4459286B2 (ja) * 2008-08-08 2010-04-28 防衛省技術研究本部長 赤外線検知器
CN102265412A (zh) * 2008-12-16 2011-11-30 加州理工学院 光电探测器的数字合金吸收体
JP2010205858A (ja) * 2009-03-02 2010-09-16 Sumitomo Electric Ind Ltd 光検出装置および光検出装置の製造方法
JP2010283339A (ja) * 2009-05-02 2010-12-16 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
JP5536488B2 (ja) * 2010-02-22 2014-07-02 ローム株式会社 カラー用固体撮像装置
JPWO2011148574A1 (ja) * 2010-05-28 2013-07-25 パナソニック株式会社 固体撮像装置
US8299497B1 (en) * 2010-06-30 2012-10-30 Sandia Corporation Near-infrared photodetector with reduced dark current
US8466530B2 (en) 2011-06-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Co-implant for backside illumination sensor
JP2013175686A (ja) 2012-02-27 2013-09-05 Sumitomo Electric Ind Ltd 受光素子、その製造方法、および検出装置
KR101293647B1 (ko) * 2012-07-27 2013-08-13 삼성코닝정밀소재 주식회사 투명 전도성 산화물 박막 기판, 그 제조방법, 이를 포함하는 유기전계발광소자 및 광전지
US9543343B2 (en) * 2013-11-29 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming image sensor device

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