US20150228685A1 - Light receiving element, image capturing element including the light receiving element and image capturing apparatus including the image capturing element - Google Patents

Light receiving element, image capturing element including the light receiving element and image capturing apparatus including the image capturing element Download PDF

Info

Publication number
US20150228685A1
US20150228685A1 US14/609,601 US201514609601A US2015228685A1 US 20150228685 A1 US20150228685 A1 US 20150228685A1 US 201514609601 A US201514609601 A US 201514609601A US 2015228685 A1 US2015228685 A1 US 2015228685A1
Authority
US
United States
Prior art keywords
compound semiconductor
light receiving
layer
receiving element
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/609,601
Other languages
English (en)
Inventor
Shiro Uchida
Hideshi Abe
Tomomasa Watanabe
Hiroshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YOSHIDA, HIROSHI, ABE, HIDESHI, WATANABE, TOMOMASA, UCHIDA, SHIRO
Publication of US20150228685A1 publication Critical patent/US20150228685A1/en
Priority to US16/711,084 priority Critical patent/US11296245B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H01L27/14643—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H01L27/14621—
    • H01L31/022466—
    • H01L31/022475—
    • H01L31/0304—
    • H01L31/03046—
    • H01L31/105—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Definitions

  • the present disclosure relates to a light receiving element, an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.
  • an image capturing element included in an image capturing apparatus includes a light receiving element (photoelectric conversion element, photodiode) formed on a silicon semiconductor substrate.
  • a light receiving element photoelectric conversion element, photodiode
  • an light absorption index of silicon Si
  • a light receiving element should be formed on the silicon semiconductor substrate positioned deeper from a light incident surface (specifically, about 10 ⁇ m, for example) (see Japanese Patent Application Laid-open No. 09-331058, for example). This means that an aspect ratio in the image capturing element increases as pixels are miniaturized in the image capturing apparatus.
  • the aspect ratio increases in the image capturing element, it arises a problem of a color mixture between pixels where light incident on a certain image capturing element is incident on other image capturing element adjacent thereto. If the aspect ratio in the image capturing element is decreased in order to decrease the color mixture between pixels, a sensitivity of the image capturing element is undesirably decreased in red color to near infrared region light.
  • an energy band gap of Si is 1.1 eV, it is theoretically impossible to detect infrared light longer than 1.1 ⁇ m.
  • InGaAs is used, thereby being possible to detect infrared light.
  • an InP substrate is not removed, visible light is impossible to be detected.
  • a light receiving element including:
  • a surface recombination prevention layer composed of a first compound semiconductor on which light is incident
  • a light receiving element including:
  • a surface recombination prevention layer composed of a first compound semiconductor
  • a compound semiconductor layer composed of a third compound semiconductor further including:
  • a contact layer composed of a fourth compound semiconductor formed between the transparent conductive material layer and the surface recombination prevention layer, the surface recombination prevention layer having a thickness of 30 nm or less, and the contact layer having a thickness of 20 nm or less.
  • an image capturing element including a light receiving element and a filter for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor on which light is incident
  • the light receiving element in the image capturing element according to the first feature of the present disclosure is composed of the light receiving element according to the first feature of the present disclosure.
  • an image capturing element including a light receiving element and a filter for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor
  • a compound semiconductor layer composed of a third compound semiconductor further including:
  • the light receiving element in the image capturing element according to the second feature of the present disclosure is composed of the light receiving element according to the second feature of the present disclosure.
  • an image capturing apparatus including:
  • the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor on which light is incident
  • the light receiving element in the image capturing apparatus according to the first feature of the present disclosure is composed of the light receiving element according to the first feature of the present disclosure.
  • an image capturing apparatus including:
  • the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor
  • a compound semiconductor layer composed of a third compound semiconductor further including:
  • the light receiving element in the image capturing element according to the second feature of the present disclosure is composed of the light receiving element according to the second feature of the present disclosure.
  • the image capturing element and the image capturing apparatus As the surface recombination prevention layer and the contact layer have the thicknesses thinner than predetermined thicknesses in the light receiving element, the image capturing element and the image capturing apparatus according to the first and second features of the present disclosure, visible light and infrared light pass through the surface recombination prevention layer, thereby providing the light receiving element having a high sensitivity from visible region to an infrared region.
  • the contact layer is included such that contact resistance can be decreased.
  • FIGS. 1A and 1B are schematic partial sectional diagrams of light receiving elements according to first and second embodiments
  • FIG. 2 is a graph of optical absorption coefficients of InGaAs and Si versus a wavelength
  • FIG. 3 is a graph of quantum efficiency of InGaAs having an InP substrate and no InP substrate versus a wavelength
  • FIG. 4 is a graph showing calculation results of a thickness of an InP layer, a light wavelength incident on the InP layer and a light transmission of the InP layer;
  • FIGS. 5A and 5B each is a conceptual diagram of a band structure in the light receiving element in the first embodiment
  • FIG. 6 is a conceptual diagram of a band structure in the light receiving element in the first embodiment
  • FIG. 7 is a conceptual diagram of a band structure in the light receiving element in the second embodiment.
  • FIGS. 8A and 8B are schematic partial sectional diagrams of light receiving elements in a third embodiment
  • FIGS. 9A and 9B each is a diagram schematically showing the image capturing element unit in the image capturing apparatus in the third embodiment
  • FIG. 10 is a diagram schematically showing the image capturing element unit in the image capturing apparatus in the third embodiment.
  • FIG. 11 is a schematically partial sectional diagram of a light receiving element in a fourth embodiment
  • FIGS. 12A and 12B each is a schematically partial end elevation of a laminated structure for illustrating a method of producing the light receiving element in the first embodiment after FIG. 12B ;
  • FIGS. 13A and 13B each is a schematically partial end elevation of a laminated structure for illustrating a method of producing the light receiving element in the first embodiment after FIG. 12B .
  • the surface recombination prevention layer comprises InP, InGaAsP or AlInAs
  • the photoelectric conversion layer comprises InGaAs
  • the compound semiconductor layer comprises InP, InGaAsP or AlInAs.
  • the first compound semiconductor is an n type compound semiconductor
  • the second compound semiconductor is an i type compound semiconductor
  • the third compound semiconductor is a p type compound semiconductor
  • BG 1 a band gap of the first compound semiconductor
  • BG 2 a band gap of the second compound semiconductor
  • BG 3 a band gap of the third compound semiconductor
  • a transparent conductive material layer can be formed at a light incident surface of the surface recombination prevention layer.
  • the transparent conductive material layer can comprise ITO, ITiO or NiO.
  • a conductive type of the material for the transparent conductive material layer is desirably the same as the compound semiconductor of the surface recombination prevention layer.
  • the contact layer comprises InGaAs, InP or InGaAsP;
  • the surface recombination prevention layer comprises InP, InGaAsP or AlInAs;
  • the photoelectric conversion layer comprises InGaAs; and
  • the compound semiconductor layer comprises InGaAs, InP or InGaAsP.
  • a combination of (the compound semiconductor of the contact layer and the compound semiconductor of the surface recombination prevention layer) can include (InGaAs, InP), (InGaAs, InGaAsP), (InGaAs, AlInAs), (InP, InGaAsP), (InP, AlInAs), (InGaAsP, InP), (InGaAsP, AlInAs) or (In X GaAsP, In Y GaAsP)[where X>Y].
  • the first compound semiconductor is an n type compound semiconductor
  • the second compound semiconductor is an i type compound semiconductor
  • the third compound semiconductor is a p type compound semiconductor
  • the fourth compound semiconductor is an n + type compound semiconductor.
  • the transparent conductive material layer can comprise ITO, ITiO or NiO.
  • a conductive type of the material for the transparent conductive material layer is desirably the same as the compound semiconductor of the contact layer.
  • a supplemental electrode can be formed on a light incident layer of the transparent conductive material layer.
  • the supplemental electrode can have a planar shape of a lattice pattern (a grid pattern).
  • a plurality of branch supplemental electrodes may be extended in parallel each other and respective one ends or both ends in a plurality of branch supplemental electrodes may be connected each other.
  • the supplemental electrode can be composed of an AuGe layer/Ni layer/Au layer, Mo layer/Ti layer/Pt layer/Au layer, Ti layer/Pt layer/Au layer, Ni layer/Au layer and can be formed by a physical vapor deposition method (PVD method) such as a sputtering method and a vacuum evaporation method. It is noted that the layer at the very front separated by “/” is disposed at a transparent conductive material layer side.
  • PVD method physical vapor deposition method
  • an antireflection film can be formed on the light incident layer of the transparent conductive material layer.
  • the antireflection film is desirably formed of the material having a refractive index smaller than that of the compound semiconductor of the uppermost compound semiconductor layer.
  • a layer including TiO 2 , Al 2 O 3 , ZnS, MgF 2 , Ta 2 O 5 , SiO 2 , Si 3 N 4 or ZrO 2 or a laminated structure thereof may be used, which can be formed by the PVD method such as the sputtering method.
  • the transparent conductive material layer has a first surface in contact with the surface recombination prevention layer or the contact layer and a second surface facing to the first surface, and comprises the transparent conductive material.
  • the transparent conductive material contains an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper or a compound thereof.
  • a concentration of the additive contained in the transparent conductive material near an interface of the first surface of the transparent conductive material layer is higher than a concentration of the additive contained in the transparent conductive material near an interface of the second surface of the transparent conductive material layer.
  • the additive composed of the metal compound contained in the transparent conductive material layer include tungsten oxide, chromium oxide, ruthenium oxide, titanium oxide, nickel oxide, zinc oxide, iron oxide and copper oxide.
  • the transparent conductive material layer contains the additive and the concentration of the additive contained in the transparent conductive material near an interface of the first surface of the transparent conductive material layer is higher than the concentration of the additive contained in the transparent conductive material near an interface of the second surface of the transparent conductive material layer, the transparent conductive material layer satisfying both a low contact resistance value and a high light transmittance can be provided.
  • the concentration of the additive contained in the transparent conductive material near an interface of the first surface of the transparent conductive material layer is higher than the concentration of the additive contained in the transparent conductive material near an interface of the second surface of the transparent conductive material layer.
  • the near interface of the first surface of the transparent conductive material layer means an area that occupies 10% of a thickness of the transparent conductive material layer from the first surface of the transparent conductive material layer to the second surface of the transparent conductive material layer.
  • the near interface of the second surface of the transparent conductive material layer means an area that occupies 10% of the thickness of the transparent conductive material layer from the second surface of the transparent conductive material layer to the first surface of the transparent conductive material layer.
  • the concentration of the additive means an average concentration in these areas.
  • the transparent conductive material layer may have a laminated structure of a first layer and a second layer from a surface recombination prevention layer side or a contact layer side. While the transparent conductive material of the first layer contains an additive, the transparent conductive material of the second layer contains no additive. Such a configuration is called as a “transparent conductive material layer having a first configuration” for the sake of simplicity.
  • Ic 1 the average concentration of the additive contained in the transparent conductive material of the first layer
  • Ic 2 it is desirable that 5 ⁇ Ic 1 /Ic 2 ⁇ 10 is satisfied.
  • SIMS is used to determine whether or not the additive is contained in the transparent conductive material.
  • a carrier concentration of one metal specifically, molybdenum
  • the carrier concentration of one metal specifically, molybdenum
  • the carrier concentration of one metal is less than 1.8 ⁇ 10 16 cm ⁇ 3 , it can be determined that the additive is contained in the transparent conductive material.
  • the average concentration of the additive contained in the transparent conductive material of the first layer is desirably 5 ⁇ 10 16 cm ⁇ 3 to 1 ⁇ 10 18 cm ⁇ 3 .
  • the transparent conductive material layer having the first configuration including the desirable configuration when electrical resistivity of the first layer is represented by R 1 , electrical resistivity of the second layer is represented by R 2 , light transmittance of the first layer is represented by TP 1 within a wavelength range of 400 nm to 900 nm, and light transmittance of the first layer is represented by TP 2 within a wavelength range of 400 nm to 900 nm, it is desirable that 0.4 ⁇ R 2 /R 1 ⁇ 1.0 and 0.80 ⁇ TP 2 ⁇ TP 1 ⁇ 1.0 are satisfied.
  • the transparent conductive material layer having the first configuration including the desirable configuration it is desirable that average light transmittance of the transparent conductive material layer is 95% or more, average electrical resistivity of the transparent conductive material layer is 2 ⁇ 10 ⁇ 6 ⁇ m(2 ⁇ 10 ⁇ 4 ⁇ cm) or less, and a contact resistance value between the transparent conductive material layer and the surface recombination prevention layer or the contact layer is 1 ⁇ 10 ⁇ 8 ⁇ m 2 (1 ⁇ 10 ⁇ 4 ⁇ cm 2 ) or less.
  • T 1 a thickness of the first layer
  • T 2 it is desirable that 2 23 T 2 /T 1 ⁇ 70 is satisfied.
  • SIMS can be used to determine the average concentration of the additive contained in the first layer of the transparent conductive material.
  • the electrical resistivity of the first layer, the electrical resistivity of the second layer and the average electrical resistivity of the transparent conductive material layer can be measured as follows: after the surface of the light receiving element is adhered to the support substrate such as a glass substrate and a rear surface of the light receiving element is peeled, a remaining transparent conductive material layer is measured using a Hall measurement or a sheet resistance measurement machine.
  • a contact resistance value between the transparent conductive material layer and the contact layer can be measured as follows: when the surface of the light receiving element is adhered to the support substrate such as a glass substrate and a rear surface of the light receiving element is peeled, only the contact layer is left behind and a TLM pattern is formed. Thereafter a four-terminal method is used for measurement. Furthermore, the light transmittance (light absorption index) of the first layer, the light transmittance (light absorption index) of the second layer and the average light transmittance (light absorption index) of the transparent conductive material layer can be measured by adhering them to the glass substrate using a transmission and reflectivity measuring instrument. The thickness of the first layer and the thickness of the second layer can be measured by a step profiler or SEM or TEM electron microscope observation.
  • the concentration of the additive contained in the transparent conductive material of the transparent conductive material layer can be gradually decreased from the first surface to the second surface of the transparent conductive material layer.
  • Such a configuration is called as a “transparent conductive material layer having a second configuration”.
  • the concentration of the additive contained in the transparent conductive material can be measured using SIMS.
  • the transparent conductive material examples include ITO (indium tin oxide, including Sn doped In 2 O 3 , crystalline ITO and amorphous ITO), IZO(Indium Zinc Oxide), AZO (aluminum oxide doped zinc oxide), GZO (gallium doped zine oxide), AlMgZnO (aluminum oxide and magnesium oxide doped zinc oxide), indium-gallium complex oxide (IGO), In—GaZnO 4 (IGZO), IFO (F doped In 2 O 3 ), antimony doped SnO 2 (ATO), FTO (F doped SnO 2 ), tin oxide (SnO 2 ), zinc oxide (ZnO), B doped ZnO, InSnZnO, NiO or ITiO (Ti doped In 2 O 3 ).
  • ITO or ITiO is desirably used.
  • the light receiving elements according to first and second features of the present disclosure including the above-described various desirable embodiments and structures (hereinafter may be referred to as “the light receiving elements according to the present disclosure”)
  • a variety of compound semiconductor layers can be formed by an organic metal chemical vapor deposition method (a MOCVD method, a MOVPE method), a molecular beam epitaxy method (a MBE method) or a hydride vapor deposition method where halogen contributes to transfer or reaction.
  • the transparent conductive material layer can be basically formed by the sputtering method.
  • a target formed of the transparent conductive material called as a “transparent conductive material target”
  • a target formed of the additive called as an “additive target”
  • the additive target is disposed within a sputtering apparatus, for example.
  • sputtering is performed. After the additive is adhered to the transparent conductive material target, without a so-called pre-sputtering, the transparent conductive material target to which the additive is adhered is used for sputtering to form the transparent conductive material including the additive. It is noted that the formation of the transparent conductive material layer is not limited to this method.
  • a second electrode is disposed in addition to the transparent conductive material layer (hereinafter may be referred to as a “first electrode”).
  • the second electrode is formed in contact with the chemical semiconductor layer formed of the third compound semiconductor.
  • the second electrode include molybdenum (Mo), tungsten (W), tantalum (Ta),vanadium (V), palladium (Pd), Zinc (Zn), nickel (Ni), titanium (Ti), platinum (Pt), gold-zinc (Au-Zn), gold-germanium (AuGe), chromium (Cr), gold (Au) and aluminum (Al).
  • the second electrode is disposed at each image capturing element.
  • the transparent conductive material layer (the first electrode) can be common to a plurality of image capturing elements.
  • the transparent conductive material layer (the first electrode) can be a so-called solid film.
  • the light receiving element, the image capturing element and the image capturing apparatus can be produced by the method described below.
  • a laminated structure of the surface recombination prevention layer, the photoelectric conversion layer and the compound semiconductor layer is formed on a film-forming substrate by a well-known method.
  • the second electrode is formed on the compound semiconductor layer, the compound semiconductor layer between the light receiving elements is removed or the compound semiconductor layer between the light receiving elements is subjected to ion implantation or impurity diffusion treatment to isolate the light receiving elements in a certain kind of way.
  • a variety of circuits for driving the light receiving elements are formed on the silicon semiconductor substrate, for example.
  • a bump for connecting to the second electrode of the light receiving element is formed in advance.
  • the second electrode formed on the film-forming substrate is connected to the bump formed on the silicon semiconductor substrate.
  • a TCV through contact via
  • the film-forming substrate is removed by an etching method, a polishing method, a CMP method, a laser ablation method, a heating method or the like.
  • the surface recombination prevention layer is thinned by an etching method as necessary.
  • the transparent conductive material layer is formed on the surface of the surface recombination prevention layer and the antireflection film is formed as necessary.
  • a filter a color filter, a visible light cut filter, an infrared cut filter, for example
  • a light collecting lens an on-chip lens
  • a substrate formed of III-V group semiconductor can be used as the film-forming substrate.
  • the III-V group semiconductor substrate include GaAs, InP, GaN, AIN, GaP, GaSb, InAs, Si, sapphire and SiC.
  • the light receiving element may be fixed to the support substrate via the second electrode. Also in this case, after the light receiving element is formed on the film-forming substrate, the light receiving element is fixed or adhered to the support substrate, and the film-forming substrate may be removed from the light receiving element. The film-forming substrate is removed from the light receiving element using the above-described methods.
  • the light receiving element is fixed or adhered to the support substrate by a metal joining method, a semiconductor joining method or a metal-semiconductor joining method as well as using an adhesive agent.
  • a transparent inorganic substrate such as a silicon semiconductor substrate, a glass substrate and a quartz substrate
  • a transparent plastic substrate or film formed of polyester resin such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polycarbonate (PC) resin, polyether sulfone (PES) resin, polyolefin resin such as polystyrene, polyethylene and polypropylene, polyphenylene sulfide resin, polyvinylidene fluoride resin, tetra acetyl cellulose resin, brominated phenoxy resin, aramid resin, polyimide resin, polystyrene resin, polyarylate resin, polysulfone resin, acrylic resin, epoxy resin, fluororesin, silicone resin, diacetate resin, triacetate resin, polyvinyl chloride resin and cyclic polyolefin resin.
  • the glass substrate include a soda glass substrate, a heat resistant glass substrate and a quartz
  • a CMOS image sensor or a CCD image sensor is composed of the light receiving elements or the image capturing elements.
  • the image capturing element unit in the image capturing apparatus may be composed of:
  • the configuration and the structures of the image capturing apparatus excluding the image capturing element can be the same as the configuration and the structures of the well-known image capturing apparatus. A variety of treatments of the signals provided by the image capturing element can be performed based on the well-known circuits.
  • a light receiving element 10 A in the first embodiment includes a laminated structure (a laminated structure 20 A) of:
  • a surface recombination prevention layer 21 composed of a first compound semiconductor on which light is incident
  • a photoelectric conversion layer 22 composed of a second compound semiconductor
  • a compound semiconductor layer 23 composed of a third compound semiconductor, the surface recombination prevention layer 21 (which is also called as a window layer) having a thickness of 30 nm or less.
  • the surface recombination prevention layer 21 which is also called as a window layer having a thickness of 30 nm or less.
  • the surface recombination prevention layer 21 is composed of n type InP (i.e., the first compound semiconductor is an n type compound semiconductor), the photoelectric conversion layer 22 is composed of i type InGaAs (i.e., the second compound semiconductor is an i type compound semiconductor), and the compound semiconductor layer 23 is composed of p type InP (i.e., the third compound semiconductor is a p type compound semiconductor).
  • a band gap of the first compound semiconductor is represented by BG 1
  • a band gap of the second compound semiconductor is represented by BG 2
  • a band gap of the third compound semiconductor is represented by BG 3
  • BG 1 , BG 2 and BG 3 satisfy BG 1 >BG 2 and BG 3 >BG 2 .
  • a transparent conductive material layer (first electrode, transparent electrode layer) 25 is formed on a light incident surface of the surface recombination prevention layer 21 .
  • the transparent conductive material layer 25 is composed of ITO, ITiO or NiO.
  • a second electrode 26 is formed in contact with the compound semiconductor layer 23 .
  • the second electrode 26 is composed of Ti/W/Cu.
  • an antireflection film 28 composed of SiO 2 is formed on a light incident surface of the transparent conductive material layer 25 .
  • FIG. 2 shows optical absorption coefficients of InGaAs (“A” in FIG. 2 ) and an optical absorption coefficient of Si (“B” in FIG. 2 ) versus a wavelength.
  • FIG. 3 shows quantum efficiency of InGaAs having an InP substrate and no InP substrate versus a wavelength (specifically, “A” in FIG. 3 represents that the InP substrate is included and “B” in FIG. 3 represents that the InP substrate is etched as thinner as possible and removed).
  • Si cannot absorb the light having a wavelength of 1.1 ⁇ m or more.
  • InGaAs can absorb the light ranging from visible light to infrared light.
  • FIG. 4 shows calculation results of a thickness of an InP layer, a light wavelength incident on the InP layer and a light transmission of the InP layer.
  • “A” represents data when the InP layer has a thickness of 10 nm
  • “B” represents data when the InP layer has a thickness of 30 nm
  • “C” represents data when the InP layer has a thickness of 50 nm
  • “D” represents data when the InP layer has a thickness of 80 nm
  • “E” represents data when the InP layer has a thickness of 1 ⁇ m
  • “F” represents data when the InP layer has a thickness of 5 ⁇ m.
  • the thickness of the surface recombination prevention layer 21 composed of InP exceeds 30 nm, the visible light is undesirably much absorbed by the surface recombination prevention layer 21 composed of InP. Therefore, in the light receiving element according to the embodiment of the present disclosure, the thickness of the surface recombination prevention layer 21 is defined as 30 nm or less.
  • FIGS. 5A and 5B each is a conceptual diagram of a band structure in the light receiving element in the first embodiment (note that the transparent conductive material layer 25 is not yet formed).
  • FIGS. 5A and 5B FIG. 6 and FIG. 7 as described later, white circles schematically show holes and black circles schematically show electrons.
  • FIG. 5A shows that the surface recombination prevention layer 21 has the suitable thickness of 30 nm or less and FIG. 5B shows that the surface recombination prevention layer 21 has too thin thickness.
  • the holes existed at an interface between the surface recombination prevention layer 21 and the photoelectric conversion layer 22 are recombined on the surface.
  • FIG. 6 is a conceptual diagram of a band structure after the transparent conductive material layer 25 is formed.
  • the transparent conductive material layer 25 composed of ITO or ITiO, NiO showing a behavior as the n type semiconductor, the holes are reflected by a double block. As a result, the surface recombination is further decreased. Then, by applying a reverse bias to the transparent conductive material layer (first electrode 25 ) and the second electrode (such that the transparent conductive material layer 25 has a positive potential and the second electrode has a negative potential), the light receiving element 10 A is operated.
  • the surface recombination prevention layer 21 has the thickness of 30 nm or less, specifically 10 nm. Accordingly, the surface recombination prevention layer 21 composed of InP allows the passage of the light ranging from visible light to infrared light.
  • the photoelectric conversion layer 22 composed of InGaAs can absorb the light ranging from visible light to infrared light, and can also prevent the surface recombination. Therefore, there can be provided the light receiving element having a high sensitivity from a visible region to an infrared region.
  • the light receiving element in the first embodiment, a light receiving element in a second embodiment, an image capturing element and an image capturing apparatus in a third embodiment as described later can be produced by the following method.
  • the laminated structure 20 A of the surface recombination prevention layer 21 , the photoelectric conversion layer 22 and the compound semiconductor layer 23 (a laminated structure 20 B of a contact layer 24 , the surface recombination prevention layer 21 , the photoelectric conversion layer 22 and the compound semiconductor layer 23 in the second embodiment) is formed on a film-forming substrate 40 composed of InP.
  • a buffer layer, an etching stop layer, a polishing etching stop layer and the like may be formed between the film-forming substrate 40 and the surface recombination prevention layer 21 (or the contact layer 24 ).
  • the second electrode is formed on a desirable area of the compound semiconductor layer 23 .
  • the compound semiconductor layer 23 between the light receiving elements is removed to form an insulation layer 27 composed of SiO 2 .
  • the insulation layer 27 isolates the receiving elements.
  • the insulation layer 27 may extend to the photoelectric conversion layer 22 , for example.
  • the compound semiconductor layer 23 between the light receiving elements may be ion-implanted (as the case may be, the photoelectric conversion layer 22 may be partly or fully ion-implanted in a thickness direction) to isolate the light receiving elements.
  • FIG. 13A shows as if the bump 42 is formed on the surface of the silicon semiconductor substrate 41 , the surface of the silicon semiconductor substrate 41 on which a variety of circuits are formed is coated with an insulation layer (not shown) and the bump 42 connected to a variety of the circuits is formed on the surface of the insulation layer.
  • the film-forming substrate 40 is removed by an etching method, a polishing method, a CMP method, a laser ablation method, a heating method or the like.
  • the surface recombination prevention layer 21 is thinned by an etching method or the like as necessary. In this manner, the structure shown in FIG. 13B is provided.
  • the transparent conductive material layer 25 and the antireflection film 28 are formed sequentially on the surface of the surface recombination prevention layer 21 . In this manner, the structure shown in FIG. 1A is provided.
  • a planarization film 29 is formed on the antireflection film 28 , and a filter 30 and a light collecting lens (an on-chip lens) 31 are formed on the planarization film 29 .
  • the transparent conductive material layer (first electrode) 25 that is a solid electrode is formed above of the laminated structure 20 A and the second electrode 26 is formed below of the laminated structure 20 B, thereby simplifying the configuration and the structure.
  • the transparent conductive material layer 25 is the solid electrode, a travel distance of electrons taken out from the transparent conductive material layer 25 to the circuits for driving the light receiving element is not changed depending on the position of each light receiving element as compared to the structure where wiring is formed individually to the first electrode of each light receiving element.
  • a signal is taken out in a thickness direction of the laminated structure constituting the light receiving element (a signal is taken out from a PN structure in a longitudinal direction), thereby generating less variation in a signal accuracy.
  • a light receiving element 10 B in the second embodiment includes a laminated structure (a laminated structure 20 B) of:
  • first electrode a transparent conductive material layer (first electrode) 25 on which light is incident
  • a surface recombination prevention layer 21 composed of a first compound semiconductor
  • a photoelectric conversion layer 22 composed of a second compound semiconductor
  • a contact layer 24 composed of a fourth compound semiconductor formed between the transparent conductive material layer 25 and the surface recombination prevention layer 21 , the surface recombination prevention layer 21 having a thickness of 30 nm or less, and the contact layer 24 having a thickness of 20 nm or less.
  • the contact layer 24 is composed of n type InGaAs (i.e., the fourth compound semiconductor is an n + type compound semiconductor)
  • the surface recombination prevention layer 21 is composed of n type InP (i.e., the first compound semiconductor is an n type compound semiconductor)
  • the photoelectric conversion layer 22 is composed of i type InGaAs (i.e., the second compound semiconductor is an i type compound semiconductor)
  • the compound semiconductor layer 23 is composed of p type InP (i.e., the third compound semiconductor is a p type compound semiconductor).
  • a band gap of the first compound semiconductor is represented by BG 1
  • a band gap of the second compound semiconductor is represented by BG 2
  • a band gap of the third compound semiconductor is represented by BG 3
  • a band gap of the third compound semiconductor is represented by BG 4
  • BG 1 , BG 2 , BG 3 and BG 4 satisfy BG 1 >BG 2 and BG 3 >BG 2 and BG 1 >BG 4 .
  • the transparent conductive material layer 25 is composed of ITO, ITiO or NiO. Similar to the first embodiment, the second electrode 26 is formed in contact with the compound semiconductor layer 23 . The antireflection film 28 is formed on a light incident surface of the transparent conductive material layer 25 .
  • FIG. 7 shows a conceptual diagram of a band structure in the light receiving element in the second embodiment.
  • the contact layer 24 having a thickness of 10 nm is formed.
  • the contact layer 24 electrons are saturated. Accordingly, the contact layer 24 does not absorb light and is transparent.
  • the contact layer 24 is composed of n type InGaAs, which can decrease a contact resistance.
  • N type impurity concentrations of the contact layer 24 and the surface recombination prevention layer 21 are as described below.
  • the transparent conductive material layer 25 composed of ITO or ITiO, NiO showing a behavior as the n type semiconductor, the holes are reflected by a double block. As a result, the surface recombination is further decreased.
  • the thickness of the contact layer 24 is defined as 20 nm or less. If the contact layer 24 has a thickness of less than 10, it is difficult to decrease the contact resistance.
  • An impurity concentration range of the contact layer 24 can be 1 ⁇ 10 18 cm ⁇ 3 to 5 ⁇ 10 20 cm ⁇ 3 .
  • An impurity concentration range of the surface recombination prevention layer 21 can be 1 ⁇ 10 17 cm ⁇ 3 to 5 ⁇ 10 19 cm ⁇ 3 .
  • the surface recombination prevention layer 21 has the thickness of 30 nm or less. Accordingly, the surface recombination prevention layer 21 composed of InP allows the passage of the light ranging from visible light to infrared light.
  • the photoelectric conversion layer 22 composed of InGaAs can absorb the light ranging from visible light to infrared light, and can also prevent the surface recombination. Therefore, there can be provided the light receiving element having a high sensitivity from a visible region to an infrared region. In addition, as the contact layer 24 absorbing no light is disposed, the contact resistance can be decreased.
  • FIG. 8A shows a schematic partial sectional diagram of an image capturing element 11 A in the third embodiment to which the light receiving element in the first embodiment is applied.
  • FIG. 8B shows a schematic partial sectional diagram of an image capturing element 11 B in the third embodiment to which the light receiving element in the second embodiment is applied.
  • FIGS. 8A and 8B three light receiving elements are shown.
  • the image capturing elements 11 A and 11 B in the third embodiment include the light receiving elements 10 A and 10 B and filters 30 for passing light having a desirable wavelength disposed at the light incident side of the light receiving elements 10 A and 10 B as described in the first and second embodiments.
  • the image capturing apparatus in the third embodiment includes a plurality of the image capturing elements including the light receiving elements 10 A and 10 B and filters 30 for passing light having a desirable wavelength disposed at the light incident side of the light receiving elements 10 A and 10 B as described in the first or second embodiment.
  • the image capturing elements are arranged in a two-dimensional matrix.
  • the planarization film 29 is formed on the antireflection film 28 , and a filter 30 and a light collecting lens (an on-chip lens) 31 are formed on the planarization film 29 .
  • a CMOS image sensor or a CCD image sensor is configured.
  • FIGS. 9A and 9B and FIG. 10 each is a diagram schematically showing the image capturing element unit in the image capturing apparatus in the third embodiment.
  • the image capturing element units are shown in a solid rectangle.
  • the image capturing elements are shown in dotted lines.
  • the image capturing element unit in the image capturing apparatus in the third embodiment is composed of one of the light receiving elements in the first or second embodiment, or an image capturing element 101 composed of the light receiving element.
  • the light receiving element 101 receives the light ranging from visible light to infrared light, thereby providing an image where white/black (monochrome) image and an infrared image are shown.
  • the image capturing element unit in the image capturing apparatus in the third embodiment is composed of a first image capturing element 101 W having one of the light receiving elements in the first or second embodiment including the infrared cut filter, and a second image capturing element 102 composed of the light receiving element having one of the light receiving elements in the first or second embodiment including the infrared cut filter.
  • the light receiving element 101 W receives the visible light
  • the second image capturing element 102 receives the infrared light, thereby providing an image where white/black (monochrome) image and an infrared image are shown.
  • the image capturing element unit in the image capturing apparatus in the third embodiment is composed of a red color image capturing element 101 R composed of one light receiving element in the first or second embodiment equipped with a red color filter transmitting a red color, a green color image capturing element 101 G composed of one light receiving element in the first or second embodiment equipped with a green color filter transmitting a greed color, a blue color image capturing element 101 B composed of one light receiving element in the first or second embodiment equipped with a blue color filter transmitting a blue color, and an infrared image capturing element 102 composed of one light receiving element in the first or second embodiment equipped with the visible light cut filter.
  • the red color image capturing element 101 R receives red color light
  • the green color image capturing element 101 G receives green color light
  • the blue color image capturing element 101 B receives blue color light
  • the infrared image capturing element 102 receives infrared light. In this manner, a color image and an infrared image can be captured independently.
  • the fourth embodiment is an alternative of the first to third embodiments. Specifically, it relates to an alternative of the transparent conductive material layer 25 , more specifically, to a transparent conductive material layer having a first configuration.
  • a transparent conductive material layer (first electrode, transparent electrode layer) 125 includes a first surface 125 A in contact with the surface recombination prevention layer 21 or the contact layer and a second surface 125 B facing to the first surface 125 A, and is composed of the transparent conductive material.
  • the transparent conductive material constituting the transparent conductive material layer 125 includes an additive composed of at least one metal selected from the group consisting of a group 6 transition metal such as molybdenum, tungsten and chromium; ruthenium; titanium; nickel; zinc; iron and copper, and a compound thereof (in the fourth embodiment, specifically, molybdenum, Mo).
  • a concentration of the additive contained in the transparent conductive material near an interface of the first surface 125 A of the transparent conductive material layer 125 (hereinafter referred to as a “first electrode 125 ”) is higher than a concentration of the additive contained in the transparent conductive material near at the second surface 125 B of the transparent conductive material layer (first electrode 125 ).
  • the transparent conductive material is ITiO.
  • the first electrode 125 includes a laminated structure of a first layer 125 1 and a second layer 125 2 from a side of the surface recombination prevention layer 21 or the contact layer.
  • the transparent conductive material of the first layer 125 1 includes the additive.
  • the transparent conductive material of the first layer 125 2 includes no additive. Specifically, an average concentration I c1 of the additive contained in the transparent conductive material of the first layer 125 1 and an average concentration I c2 of the additive contained in the transparent conductive material of the second layer 125 2 are shown in Table 1 below.
  • An average light absorption index value of the first electrode is averaged at a measurement wavelength of 400 nm to 900 nm, measured by forming the first electrode (having a first layer thickness of 5 nm and a second layer thickness of 25 nm) on a glass substrate and excludes the light absorption index of the glass substrate.
  • Ic 1 1.1 ⁇ 10 17 cm ⁇ 3
  • Ic 2 1.8 ⁇ 10 16 cm ⁇ 3
  • R 1 2.5 ⁇ 10 ⁇ 4 ⁇ ⁇ cm
  • R 2 1.5 ⁇ 10 ⁇ 4 ⁇ ⁇ cm
  • TP 1 97%
  • TP 2 99%
  • T 1 5 nm
  • T 2 25 nm
  • Ic 1 /Ic 2 6.1
  • T 2 /T 1 5.0
  • Average electric resistivity of first electrode 2 ⁇ 10 ⁇ 4 ⁇ cm or less
  • the first electrode 125 is formed based on the following method.
  • a sputtering apparatus on which a transparent conductive material target composed of a transparent conductive material (ITiO) and an additive target composed of an additive (Mo) are disposed.
  • the additive target is used to sputter to attach the additive to the transparent conductive material target.
  • the film-forming substrate 40 on which laminated structures 20 A and 20 B having a plurality of compound semiconductor layers laminated are formed is brought into the sputtering apparatus.
  • the transparent conductive material target to which the additive is attached is used to perform the sputtering for the formation of the first layer the first layer 125 1 of the first electrode 125 . Thereafter, a clean transparent conductive material target is used to perform the sputtering for the formation of the second layer 125 2 of the first electrode 125 .
  • the configuration and structure of the light receiving element in the fourth embodiment can be made the same as the configurations and structures of the light receiving elements in the first and second examples
  • the configuration and structure of the image capturing element and the image capturing apparatus in the fourth embodiment can be made the same as the configurations and structures of the image capturing element and the image capturing apparatus in the third example, and the detailed explanation will be omitted.
  • the transparent conductive material of the first electrode 125 contains molybdenum (Mo), the concentration of the additive contained in the transparent conductive material near the interface of the first surface 125 A of the first electrode 125 is higher than the concentration of the additive contained in the transparent conductive material near the interface of the first surface 125 B of the first electrode 125 , thereby providing the transparent conductive material layer (first electrode) 125 satisfying both a low contact resistance value and a high light transmittance.
  • Mo molybdenum
  • the fifth embodiment is an alternative of the fourth embodiment. Specifically, it relates to a transparent conductive material layer having a second configuration.
  • the concentration of the additive contained in the transparent conductive material of the transparent conductive material layer is gradually decreased from the first surface to the second surface of the transparent conductive material layer.
  • the first electrode is prepared as follows: Similar to the fourth embodiment, there is prepared a sputtering apparatus on which a transparent conductive material target composed of a transparent conductive material (ITiO) and an additive target composed of an additive (Mo) are disposed. First, the additive target is used to sputter to attach the additive to the transparent conductive material target. Then, the film-forming substrate on which laminated structures where a plurality of compound semiconductor layers are laminated are formed is brought into the sputtering apparatus.
  • a transparent conductive material target composed of a transparent conductive material (ITiO) and an additive target composed of an additive (Mo) are disposed.
  • the additive target is used to sputter to attach the additive to the transparent conductive material target.
  • the film-forming substrate on which laminated structures where a plurality of compound semiconductor layers are laminated are formed is
  • the transparent conductive material target to which the additive is attached is used to perform the sputtering for the formation of the first electrode 125 . Thereafter, a heat treatment is performed, thereby generating a concentration gradient of Mo that is the impurity of the first electrode in the thickness direction. As a result, the concentration of the additive contained in the transparent conductive material of the first electrode can be gradually decreased from the first surface to the second surface of the first electrode.
  • the configuration and structure of the light receiving element in the fifth embodiment can be made the same as the configurations and structures of the light receiving elements in the first and second examples
  • the configuration and structure of the image capturing element and the image capturing apparatus in the fifth embodiment can be made the same as the configurations and structures of the image capturing element and the image capturing apparatus in the third example, and the detailed explanation will be omitted.
  • the present disclosure may have the following configurations.
  • a light receiving element including:
  • a surface recombination prevention layer composed of a first compound semiconductor on which light is incident
  • the surface recombination prevention layer comprises InP, InGaAsP or AlInAs,
  • the photoelectric conversion layer comprises InGaAs, and
  • the compound semiconductor layer comprises InP, InGaAsP or AlInAs.
  • the first compound semiconductor is an n type compound semiconductor
  • the second compound semiconductor is an i type compound semiconductor
  • the third compound semiconductor is a p type compound semiconductor.
  • BG 1 a band gap of the first compound semiconductor
  • BG 2 a band gap of the second compound semiconductor
  • BG 3 a band gap of the third compound semiconductor
  • a transparent conductive material layer is formed on a light incident surface of the surface recombination prevention layer.
  • the transparent conductive material layer comprises ITO, ITiO or NiO.
  • the transparent conductive material contains an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper or a compound thereof, and
  • a concentration of the additive contained in the transparent conductive material near an interface of the first surface of the transparent conductive material layer is higher than a concentration of the additive contained in the transparent conductive material near an interface of the second surface of the transparent conductive material layer.
  • the transparent conductive material include ITO, IZO, AZO, GZO, AlMgZnO, IGO, IGZO, IFO, ATO, FTO, SnO 2 , ZnO, B doped ZnO, InSnZnO, NiO or ITiO.
  • a supplemental electrode is formed on a second surface of the transparent conductive material layer.
  • the transparent conductive material layer has a laminated structure of a first layer and a second layer from a surface recombination prevention layer side,
  • the transparent conductive material of the first layer contains an additive
  • the transparent conductive material of the second layer contains no additive.
  • an average concentration of the additive contained in the transparent conductive material of the first layer is 5 ⁇ 10 16 cm ⁇ 3 to 1 ⁇ 10 18 cm ⁇ 3 .
  • electrical resistivity of the first layer is represented by R 1
  • electrical resistivity of the second layer is represented by R 2
  • light transmittance of the first layer is represented by TP 1 within a wavelength range of 400 nm to 900 nm
  • light transmittance of the first layer is represented by TP 2 within a wavelength range of 400 nm to 900 nm
  • 0.4 ⁇ R 2 /R 1 ⁇ 1.0 and 0.80 23 TP 2 ⁇ TP 1 ⁇ 1.0 are satisfied.
  • average light transmittance of the transparent conductive material layer is 95% or more
  • average electrical resistivity of the transparent conductive material layer is 2 ⁇ 10 ⁇ 6 ⁇ m or less
  • a contact resistance value between the transparent conductive material layer and the surface recombination prevention layer or the contact layer is 1 ⁇ 10 ⁇ 8 ⁇ m 2 .
  • the concentration of the additive contained in the transparent conductive material of the transparent conductive material layer is gradually decreased from the first surface to the second surface of the transparent conductive material layer.
  • a light receiving element including:
  • a surface recombination prevention layer composed of a first compound semiconductor
  • a compound semiconductor layer composed of a third compound semiconductor further including:
  • a contact layer composed of a fourth compound semiconductor formed between the transparent conductive material layer and the surface recombination prevention layer, the surface recombination prevention layer having a thickness of 30 nm or less, and the contact layer having a thickness of 20 nm or less.
  • the contact layer comprises InGaAs, InP or InGaAsP
  • the surface recombination prevention layer comprises InP, InGaAsP or AlInAs
  • the photoelectric conversion layer comprises InGaAs, and
  • the compound semiconductor layer comprises InGaAs, InP or InGaAsP.
  • a combination of (the compound semiconductor of the contact layer and the compound semiconductor of the surface recombination prevention layer) can include (InGaAs, InP), (InGaAs, InGaAsP), (InGaAs, AlInAs), (InP, InGaAsP), (InP, AlInAs), (InGaAsP, InP), (InGaAsP, AlInAs) or (In X GaAsP, In Y GaAsP)[where X>Y].
  • the first compound semiconductor is an n type compound semiconductor
  • the second compound semiconductor is an i type compound semiconductor
  • the third compound semiconductor is a p type compound semiconductor
  • the fourth compound semiconductor is an n type compound semiconductor.
  • a band gap of the first compound semiconductor is represented by BG 1
  • a band gap of the second compound semiconductor is represented by BG 2
  • a band gap of the third compound semiconductor is represented by BG 3
  • a band gap of the fourth compound semiconductor is represented by BG 4
  • BG 1 , BG 2 , BG 3 and BG 4 satisfy BG 1 >BG 2 , BG 3 >BG 2 and BG 1 >BG 4 .
  • the transparent conductive material layer comprises ITO, ITiO or NiO.
  • the transparent conductive material contains an additive composed of at least one metal selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron and copper or a compound thereof, and
  • a concentration of the additive contained in the transparent conductive material near an interface of the first surface of the transparent conductive material layer is higher than a concentration of the additive contained in the transparent conductive material near an interface of the second surface of the transparent conductive material layer.
  • the transparent conductive material include ITO, IZO, AZO, GZO, AlMgZnO, IGO, IGZO, IFO, ATO, FTO, SnO 2 , ZnO, B doped ZnO, InSnZnO, NiO or ITiO.
  • a supplemental electrode is formed on a second surface of the transparent conductive material layer.
  • the transparent conductive material layer has a laminated structure of a first layer and a second layer from a contact layer side,
  • the transparent conductive material of the first layer contains an additive
  • the transparent conductive material of the second layer contains no additive.
  • an average concentration of the additive contained in the transparent conductive material of the first layer is 5 ⁇ 10 16 cm ⁇ 3 to 1 ⁇ 10 18 cm ⁇ 3 .
  • electrical resistivity of the first layer is represented by R 1
  • electrical resistivity of the second layer is represented by R 2
  • light transmittance of the first layer is represented y TP 1 within a wavelength range of 400 nm to 900 nm
  • light transmittance of the first layer is represented by TP 2 within a wavelength range of 400 nm to 900 nm
  • 0.4 ⁇ R 2 /R 1 ⁇ 1.0 and 0.80 ⁇ TP 2 ⁇ TP 1 ⁇ 1.0 are satisfied.
  • average light transmittance of the transparent conductive material layer is 95% or more
  • average electrical resistivity of the transparent conductive material layer is 2 ⁇ 10 ⁇ 6 ⁇ m or less
  • a contact resistance value between the transparent conductive material layer and the surface recombination prevention layer or the contact layer is 1 ⁇ 10 ⁇ 8 ⁇ m 2 .
  • the concentration of the additive contained in the transparent conductive material of the transparent conductive material layer is gradually decreased from the first surface to the second surface of the transparent conductive material layer.
  • An image capturing element including a light receiving element and a filter for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor on which light is incident
  • An image capturing element including a light receiving element and a filter for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes the light receiving element according to any one of [A01] to [D10] above.
  • An image capturing element including a light receiving element and a filter for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor
  • a compound semiconductor layer composed of a third compound semiconductor further including:
  • a contact layer composed of a fourth compound semiconductor formed between the transparent conductive material layer and the surface recombination prevention layer, the surface recombination prevention layer having a thickness of 30 nm or less, and the contact layer having a thickness of 20 nm or less.
  • An image capturing element including a light receiving element and a filter for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes the light receiving element according to any one of [A01] to [D10] above.
  • An image capturing apparatus including:
  • the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor on which light is incident
  • An image capturing apparatus including a plurality of image capturing elements including light receiving elements and filters for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes the light receiving element according to any one of [A01] to [D10] above.
  • An image capturing apparatus including:
  • the light receiving element includes
  • a surface recombination prevention layer composed of a first compound semiconductor
  • a compound semiconductor layer composed of a third compound semiconductor further including:
  • a contact layer composed of a fourth compound semiconductor formed between the transparent conductive material layer and the surface recombination prevention layer, the surface recombination prevention layer having a thickness of 30 nm or less, and the contact layer having a thickness of 20 nm or less.
  • An image capturing apparatus including a plurality of image capturing elements including light receiving elements and filters for passing light having a desirable wavelength disposed at a light incident side of the light receiving element, in which the light receiving element includes the light receiving element according to any one of [A01] to [D10] above.

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
US14/609,601 2014-02-07 2015-01-30 Light receiving element, image capturing element including the light receiving element and image capturing apparatus including the image capturing element Abandoned US20150228685A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/711,084 US11296245B2 (en) 2014-02-07 2019-12-11 Image capturing apparatus including a compound semiconductor layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014022155A JP6295693B2 (ja) 2014-02-07 2014-02-07 撮像装置
JP2014-022155 2014-02-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/711,084 Continuation US11296245B2 (en) 2014-02-07 2019-12-11 Image capturing apparatus including a compound semiconductor layer

Publications (1)

Publication Number Publication Date
US20150228685A1 true US20150228685A1 (en) 2015-08-13

Family

ID=53775636

Family Applications (2)

Application Number Title Priority Date Filing Date
US14/609,601 Abandoned US20150228685A1 (en) 2014-02-07 2015-01-30 Light receiving element, image capturing element including the light receiving element and image capturing apparatus including the image capturing element
US16/711,084 Active 2035-03-06 US11296245B2 (en) 2014-02-07 2019-12-11 Image capturing apparatus including a compound semiconductor layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
US16/711,084 Active 2035-03-06 US11296245B2 (en) 2014-02-07 2019-12-11 Image capturing apparatus including a compound semiconductor layer

Country Status (2)

Country Link
US (2) US20150228685A1 (enExample)
JP (1) JP6295693B2 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107424246A (zh) * 2017-04-11 2017-12-01 京东方科技集团股份有限公司 可见光通信密码解锁装置及方法
EP3355082A1 (en) * 2017-01-27 2018-08-01 Detection Technology Oy Radiation detector panel assembly structure
US20190027528A1 (en) * 2016-01-13 2019-01-24 Sony Corporation Light-receiving element, manufacturing method of the same, imaging device, and electronic apparatus
US10304884B2 (en) 2015-07-22 2019-05-28 Sony Semiconductor Solutions Corporation Imaging device and method for manufacturing the same
EP3404715A4 (en) * 2016-01-13 2019-05-29 Sony Corporation LIGHT-EMITTING ELEMENT, METHOD FOR PRODUCING A LIGHT RECEPTACLE ELEMENT, IMAGE RECORDING ELEMENT AND ELECTRONIC DEVICE
CN110021678A (zh) * 2018-01-10 2019-07-16 中国科学院苏州纳米技术与纳米仿生研究所 红外光探测器及其制备方法
US10522582B2 (en) 2015-10-05 2019-12-31 Sony Semiconductor Solutions Corporation Imaging apparatus
CN111599879A (zh) * 2020-06-11 2020-08-28 武汉华星光电技术有限公司 Pin感光器件及其制作方法、及显示面板
US10818718B2 (en) 2016-07-20 2020-10-27 Sony Corporation Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus
EP3745458A4 (en) * 2018-01-23 2021-03-17 Sony Semiconductor Solutions Corporation IMAGING DEVICE
EP3975268A1 (en) * 2020-09-28 2022-03-30 Samsung Electronics Co., Ltd. Light detecting device and method of manufacturing same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6849314B2 (ja) * 2016-03-30 2021-03-24 富士フイルム株式会社 組成物、膜、光学フィルタ、積層体、固体撮像素子、画像表示装置および赤外線センサ
JP7007088B2 (ja) * 2016-12-07 2022-01-24 ソニーセミコンダクタソリューションズ株式会社 受光素子、撮像素子および電子機器
DE112017006908T5 (de) * 2017-01-24 2019-10-02 Sony Semiconductor Solutions Corporation Lichtempfangselement, verfahren zum produzieren eines lichtempfangselements, bildgebungselement und elektronische vorrichtung
US12074178B2 (en) * 2018-12-28 2024-08-27 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
JP2022115678A (ja) * 2021-01-28 2022-08-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JPWO2023127110A1 (enExample) * 2021-12-28 2023-07-06
WO2025017886A1 (ja) * 2023-07-19 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
US5684308A (en) * 1996-02-15 1997-11-04 Sandia Corporation CMOS-compatible InP/InGaAs digital photoreceiver
US5726462A (en) * 1996-02-07 1998-03-10 Sandia Corporation Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
US5780867A (en) * 1996-03-07 1998-07-14 Sandia Corporation Broadband light-emitting diode
JPH10294478A (ja) * 1997-04-18 1998-11-04 Sharp Corp 光電変換素子
US20020050592A1 (en) * 2000-10-27 2002-05-02 Hiroaki Kakinuma Photodetector device
US20030218153A1 (en) * 2002-03-27 2003-11-27 Sumitomo Metal Mining Co., Ltd. Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
US20040137280A1 (en) * 2002-10-04 2004-07-15 Yoshiyuki Abe Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base material, solar cell and photo detection element
US20050012095A1 (en) * 2003-06-26 2005-01-20 Kyocera Corporation Semiconductor/electrode contact structure and semiconductor device using the same
US20090165840A1 (en) * 2007-12-27 2009-07-02 Sanyo Electric Co., Ltd. Solar cell module and method of manufacturing the same
US20090184383A1 (en) * 2006-03-31 2009-07-23 Ucl Business Plc Photodetector
US20090278158A1 (en) * 2005-12-14 2009-11-12 Naoki Fukunaga Gallium nitride based compound semiconductor light-emitting device and method of manufacturing the same
US20100155777A1 (en) * 2008-12-16 2010-06-24 California Institute Of Technology Digital alloy absorber for photodetectors
US20100182800A1 (en) * 2006-12-15 2010-07-22 Reiko Taniguchi Linear light-emitting device
US20100275990A1 (en) * 2009-05-02 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US8299497B1 (en) * 2010-06-30 2012-10-30 Sandia Corporation Near-infrared photodetector with reduced dark current
US20140026952A1 (en) * 2012-07-27 2014-01-30 Samsung Corning Precision Materials Co., Ltd. Transparent conductive oxide thin film substrate, method of fabricating the same, and organic light-emitting device and photovoltaic cell having the same
US20150155320A1 (en) * 2013-11-29 2015-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming image sensor device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104287A (ja) 1989-09-19 1991-05-01 Fujitsu Ltd 半導体受光素子の製造方法
JP3014006B2 (ja) * 1990-11-30 2000-02-28 富士通株式会社 半導体装置
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
GB9226890D0 (en) * 1992-12-23 1993-02-17 Philips Electronics Uk Ltd An imaging device
JPH07254726A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体光検出器
JPH09331058A (ja) 1996-06-13 1997-12-22 Sony Corp 固体撮像素子
AU4461000A (en) 1999-04-19 2000-11-02 Government of the United States of America as represented by the Administrator of the National Aeronautics and Space Administration (NASA), The Msm optical detector with an active region heterojunction forming a two-dimensional electron gas
JP2001332758A (ja) * 2000-05-18 2001-11-30 Fujitsu Ltd 半導体光検出器および半導体光メモリ装置
US6586718B2 (en) * 2000-05-25 2003-07-01 Matsushita Electric Industrial Co., Ltd. Photodetector and method for fabricating the same
JP2002050786A (ja) * 2000-05-25 2002-02-15 Matsushita Electric Ind Co Ltd 受光素子およびその製造方法
JP2003188405A (ja) * 2001-12-20 2003-07-04 Osaka Gas Co Ltd 紫外線受光素子
JP2005347475A (ja) * 2004-06-02 2005-12-15 Fuji Photo Film Co Ltd 固体撮像素子、及び固体撮像システム
JP4211696B2 (ja) 2004-06-30 2009-01-21 ソニー株式会社 固体撮像装置の製造方法
JP4507876B2 (ja) * 2004-12-22 2010-07-21 ソニー株式会社 固体撮像素子
JP4738999B2 (ja) * 2005-12-06 2011-08-03 豊田合成株式会社 半導体光素子の製造方法
CA2646692C (en) * 2006-03-21 2014-06-17 Shimon Maimon Reduced dark current photodetector
JP2007266251A (ja) 2006-03-28 2007-10-11 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
JP5234312B2 (ja) 2007-10-19 2013-07-10 住友電気工業株式会社 撮像装置
JP4459286B2 (ja) * 2008-08-08 2010-04-28 防衛省技術研究本部長 赤外線検知器
JP2010205858A (ja) * 2009-03-02 2010-09-16 Sumitomo Electric Ind Ltd 光検出装置および光検出装置の製造方法
JP5536488B2 (ja) * 2010-02-22 2014-07-02 ローム株式会社 カラー用固体撮像装置
JPWO2011148574A1 (ja) * 2010-05-28 2013-07-25 パナソニック株式会社 固体撮像装置
US8466530B2 (en) 2011-06-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Co-implant for backside illumination sensor
JP2013175686A (ja) 2012-02-27 2013-09-05 Sumitomo Electric Ind Ltd 受光素子、その製造方法、および検出装置

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
US5726462A (en) * 1996-02-07 1998-03-10 Sandia Corporation Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
US5684308A (en) * 1996-02-15 1997-11-04 Sandia Corporation CMOS-compatible InP/InGaAs digital photoreceiver
US5780867A (en) * 1996-03-07 1998-07-14 Sandia Corporation Broadband light-emitting diode
JPH10294478A (ja) * 1997-04-18 1998-11-04 Sharp Corp 光電変換素子
US20020050592A1 (en) * 2000-10-27 2002-05-02 Hiroaki Kakinuma Photodetector device
US20030218153A1 (en) * 2002-03-27 2003-11-27 Sumitomo Metal Mining Co., Ltd. Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
US20040137280A1 (en) * 2002-10-04 2004-07-15 Yoshiyuki Abe Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base material, solar cell and photo detection element
US20050012095A1 (en) * 2003-06-26 2005-01-20 Kyocera Corporation Semiconductor/electrode contact structure and semiconductor device using the same
US20090278158A1 (en) * 2005-12-14 2009-11-12 Naoki Fukunaga Gallium nitride based compound semiconductor light-emitting device and method of manufacturing the same
US20090184383A1 (en) * 2006-03-31 2009-07-23 Ucl Business Plc Photodetector
US20100182800A1 (en) * 2006-12-15 2010-07-22 Reiko Taniguchi Linear light-emitting device
US20090165840A1 (en) * 2007-12-27 2009-07-02 Sanyo Electric Co., Ltd. Solar cell module and method of manufacturing the same
US20100155777A1 (en) * 2008-12-16 2010-06-24 California Institute Of Technology Digital alloy absorber for photodetectors
US20100275990A1 (en) * 2009-05-02 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US8299497B1 (en) * 2010-06-30 2012-10-30 Sandia Corporation Near-infrared photodetector with reduced dark current
US20140026952A1 (en) * 2012-07-27 2014-01-30 Samsung Corning Precision Materials Co., Ltd. Transparent conductive oxide thin film substrate, method of fabricating the same, and organic light-emitting device and photovoltaic cell having the same
US20150155320A1 (en) * 2013-11-29 2015-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming image sensor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
T. Ohno, T. Kawahara, M. Murasugi, H. Tanaka, T. Kawai, S. Kohiki Magnetic and electric properties of Fe-doped ITO thin films J. Magn. Magn. Mater., 310 (2007), pp. 717-719 (Year: 2007) *
Venkatesan, M, Gunning, RD, Stamenov, P, Coey, JM. Room temperature ferromagnetism in Mn‐and Fe‐doped indium tin oxide thin films. J Appl Phys. 2008; 103( 7): 07D135 (Year: 2008) *
W.Chang, S. Lee, C Yang, T. Lin Opto-electronic properties of chromium doped indium–tin-oxide films deposited at room temperature Mater. Sci. Eng., B, 153 (1) (2008), pp. 57-61 (Year: 2008) *

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10304884B2 (en) 2015-07-22 2019-05-28 Sony Semiconductor Solutions Corporation Imaging device and method for manufacturing the same
US10522582B2 (en) 2015-10-05 2019-12-31 Sony Semiconductor Solutions Corporation Imaging apparatus
US10811456B2 (en) 2015-10-05 2020-10-20 Sony Semiconductor Solutions Corporation Imaging apparatus and manufacturing method
EP3404715A4 (en) * 2016-01-13 2019-05-29 Sony Corporation LIGHT-EMITTING ELEMENT, METHOD FOR PRODUCING A LIGHT RECEPTACLE ELEMENT, IMAGE RECORDING ELEMENT AND ELECTRONIC DEVICE
US10580821B2 (en) * 2016-01-13 2020-03-03 Sony Corporation Light-receiving element, manufacturing method of the same, imaging device, and electronic apparatus
US20190027528A1 (en) * 2016-01-13 2019-01-24 Sony Corporation Light-receiving element, manufacturing method of the same, imaging device, and electronic apparatus
US10818718B2 (en) 2016-07-20 2020-10-27 Sony Corporation Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus
US10942284B2 (en) 2017-01-27 2021-03-09 Detection Technology Oy Radiation detector panel assembly structure
WO2018138178A1 (en) * 2017-01-27 2018-08-02 Detection Technology Oy Radiation detector panel assembly structure
CN110546532A (zh) * 2017-01-27 2019-12-06 芬兰探测技术股份有限公司 辐射探测器面板组件结构
EP3355082A1 (en) * 2017-01-27 2018-08-01 Detection Technology Oy Radiation detector panel assembly structure
CN107424246A (zh) * 2017-04-11 2017-12-01 京东方科技集团股份有限公司 可见光通信密码解锁装置及方法
CN110021678A (zh) * 2018-01-10 2019-07-16 中国科学院苏州纳米技术与纳米仿生研究所 红外光探测器及其制备方法
EP3745458A4 (en) * 2018-01-23 2021-03-17 Sony Semiconductor Solutions Corporation IMAGING DEVICE
CN111599879A (zh) * 2020-06-11 2020-08-28 武汉华星光电技术有限公司 Pin感光器件及其制作方法、及显示面板
EP3975268A1 (en) * 2020-09-28 2022-03-30 Samsung Electronics Co., Ltd. Light detecting device and method of manufacturing same
US11626529B2 (en) * 2020-09-28 2023-04-11 Samsung Electronics Co., Ltd. Light detecting device and method of manufacturing same

Also Published As

Publication number Publication date
JP6295693B2 (ja) 2018-03-20
JP2015149422A (ja) 2015-08-20
US20200119210A1 (en) 2020-04-16
US11296245B2 (en) 2022-04-05

Similar Documents

Publication Publication Date Title
US11296245B2 (en) Image capturing apparatus including a compound semiconductor layer
JP6530664B2 (ja) 撮像装置及びその製造方法
KR102496483B1 (ko) 아발란치 광검출기 및 이를 포함하는 이미지 센서
US10727429B2 (en) Insulating material, electronic device and imaging apparatus
JPWO2008093834A1 (ja) 固体撮像装置およびその製造方法
US10886325B2 (en) Infrared detector devices and focal plane arrays having a transparent common ground structure and methods of fabricating the same
JP7163938B2 (ja) 撮像素子及び固体撮像装置
JP6055787B2 (ja) 太陽電池及びその製造方法
JP2011171646A (ja) カラー用固体撮像装置
US10811449B2 (en) Active matrix substrate and x-ray imaging panel including same
TWI603494B (zh) 太陽能電池
WO2018147332A1 (ja) 撮像パネル及びその製造方法
JP2021197469A (ja) 半導体装置
JP6642599B2 (ja) 受光素子、撮像素子及び撮像装置
KR102270928B1 (ko) 광 센서
US10879304B2 (en) Active matrix substrate, x-ray imaging panel including same and producing method thereof
US11011570B2 (en) Imaging panel and method for manufacturing same
JP2010161269A (ja) 有機光電変換素子及びその製造方法並びに有機光電変換撮像素子
WO2016006297A1 (ja) 電子デバイス及びその製造方法、固体撮像装置、並びに、絶縁材料
US20190259798A1 (en) Active matrix substrate, x-ray imaging panel including same, and producing method thereof
KR20120090397A (ko) 태양전지 및 이의 제조방법
KR101209982B1 (ko) 태양전지 및 이의 제조방법
KR20120090396A (ko) 태양전지 및 이의 제조방법
CN117293214A (zh) 光电二极管及其制造方法
KR100802106B1 (ko) 해상도가 향상되는 하이브리드형 적외선 검출기 및 그제조방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: SONY CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:UCHIDA, SHIRO;ABE, HIDESHI;WATANABE, TOMOMASA;AND OTHERS;SIGNING DATES FROM 20150107 TO 20150114;REEL/FRAME:034861/0847

STPP Information on status: patent application and granting procedure in general

Free format text: ADVISORY ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION