JP6295693B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP6295693B2
JP6295693B2 JP2014022155A JP2014022155A JP6295693B2 JP 6295693 B2 JP6295693 B2 JP 6295693B2 JP 2014022155 A JP2014022155 A JP 2014022155A JP 2014022155 A JP2014022155 A JP 2014022155A JP 6295693 B2 JP6295693 B2 JP 6295693B2
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JP
Japan
Prior art keywords
layer
compound semiconductor
light receiving
conductive material
transparent conductive
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JP2014022155A
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English (en)
Japanese (ja)
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JP2015149422A5 (enExample
JP2015149422A (ja
Inventor
内田　史朗
史朗 内田
阿部　秀司
秀司 阿部
知雅 渡邊
知雅 渡邊
吉田　浩
浩 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2014022155A priority Critical patent/JP6295693B2/ja
Priority to US14/609,601 priority patent/US20150228685A1/en
Publication of JP2015149422A publication Critical patent/JP2015149422A/ja
Publication of JP2015149422A5 publication Critical patent/JP2015149422A5/ja
Application granted granted Critical
Publication of JP6295693B2 publication Critical patent/JP6295693B2/ja
Priority to US16/711,084 priority patent/US11296245B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014022155A 2014-02-07 2014-02-07 撮像装置 Active JP6295693B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014022155A JP6295693B2 (ja) 2014-02-07 2014-02-07 撮像装置
US14/609,601 US20150228685A1 (en) 2014-02-07 2015-01-30 Light receiving element, image capturing element including the light receiving element and image capturing apparatus including the image capturing element
US16/711,084 US11296245B2 (en) 2014-02-07 2019-12-11 Image capturing apparatus including a compound semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014022155A JP6295693B2 (ja) 2014-02-07 2014-02-07 撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018027622A Division JP6642599B2 (ja) 2018-02-20 2018-02-20 受光素子、撮像素子及び撮像装置

Publications (3)

Publication Number Publication Date
JP2015149422A JP2015149422A (ja) 2015-08-20
JP2015149422A5 JP2015149422A5 (enExample) 2016-03-31
JP6295693B2 true JP6295693B2 (ja) 2018-03-20

Family

ID=53775636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014022155A Active JP6295693B2 (ja) 2014-02-07 2014-02-07 撮像装置

Country Status (2)

Country Link
US (2) US20150228685A1 (enExample)
JP (1) JP6295693B2 (enExample)

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JP6530664B2 (ja) 2015-07-22 2019-06-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置及びその製造方法
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JP6903896B2 (ja) * 2016-01-13 2021-07-14 ソニーグループ株式会社 受光素子の製造方法
JP6849314B2 (ja) * 2016-03-30 2021-03-24 富士フイルム株式会社 組成物、膜、光学フィルタ、積層体、固体撮像素子、画像表示装置および赤外線センサ
US10818718B2 (en) 2016-07-20 2020-10-27 Sony Corporation Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus
JP7007088B2 (ja) * 2016-12-07 2022-01-24 ソニーセミコンダクタソリューションズ株式会社 受光素子、撮像素子および電子機器
DE112017006908T5 (de) * 2017-01-24 2019-10-02 Sony Semiconductor Solutions Corporation Lichtempfangselement, verfahren zum produzieren eines lichtempfangselements, bildgebungselement und elektronische vorrichtung
EP3355082B1 (en) * 2017-01-27 2020-04-15 Detection Technology Oy Radiation detector panel assembly structure
CN107424246B (zh) * 2017-04-11 2021-04-20 京东方科技集团股份有限公司 可见光通信密码解锁装置及方法
CN110021678B (zh) * 2018-01-10 2021-06-04 中国科学院苏州纳米技术与纳米仿生研究所 红外光探测器及其制备方法
WO2019146299A1 (ja) * 2018-01-23 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置
US12074178B2 (en) * 2018-12-28 2024-08-27 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
CN111599879B (zh) * 2020-06-11 2022-05-31 武汉华星光电技术有限公司 Pin感光器件及其制作方法、及显示面板
KR102864088B1 (ko) * 2020-09-28 2025-09-23 삼성전자주식회사 광 검출 소자 및 그 제조방법
JP2022115678A (ja) * 2021-01-28 2022-08-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JPWO2023127110A1 (enExample) * 2021-12-28 2023-07-06
WO2025017886A1 (ja) * 2023-07-19 2025-01-23 ソニーセミコンダクタソリューションズ株式会社 光検出装置

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Also Published As

Publication number Publication date
JP2015149422A (ja) 2015-08-20
US20200119210A1 (en) 2020-04-16
US11296245B2 (en) 2022-04-05
US20150228685A1 (en) 2015-08-13

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