JP2015088520A5 - - Google Patents
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- Publication number
- JP2015088520A5 JP2015088520A5 JP2013223352A JP2013223352A JP2015088520A5 JP 2015088520 A5 JP2015088520 A5 JP 2015088520A5 JP 2013223352 A JP2013223352 A JP 2013223352A JP 2013223352 A JP2013223352 A JP 2013223352A JP 2015088520 A5 JP2015088520 A5 JP 2015088520A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetization
- storage
- magnetic material
- magnetization fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005415 magnetization Effects 0.000 claims description 35
- 230000005291 magnetic effect Effects 0.000 claims description 32
- 239000000696 magnetic material Substances 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910019236 CoFeB Inorganic materials 0.000 claims description 2
- 230000004044 response Effects 0.000 claims 4
- 230000005293 ferrimagnetic effect Effects 0.000 claims 3
- 230000005294 ferromagnetic effect Effects 0.000 claims 3
- 230000001939 inductive effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013223352A JP6194752B2 (ja) | 2013-10-28 | 2013-10-28 | 記憶素子、記憶装置、磁気ヘッド |
| TW103134937A TWI639155B (zh) | 2013-10-28 | 2014-10-07 | 儲存元件、儲存裝置及磁頭 |
| PCT/JP2014/005318 WO2015064049A1 (en) | 2013-10-28 | 2014-10-20 | Stt mram and magnetic head |
| US15/031,092 US9818932B2 (en) | 2013-10-28 | 2014-10-20 | Storage element, storage device, and magnetic head |
| CN201480057802.4A CN105684178B (zh) | 2013-10-28 | 2014-10-20 | 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013223352A JP6194752B2 (ja) | 2013-10-28 | 2013-10-28 | 記憶素子、記憶装置、磁気ヘッド |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017154321A Division JP2017212464A (ja) | 2017-08-09 | 2017-08-09 | 記憶素子、記憶装置、磁気ヘッド |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015088520A JP2015088520A (ja) | 2015-05-07 |
| JP2015088520A5 true JP2015088520A5 (enExample) | 2016-02-25 |
| JP6194752B2 JP6194752B2 (ja) | 2017-09-13 |
Family
ID=51866293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013223352A Expired - Fee Related JP6194752B2 (ja) | 2013-10-28 | 2013-10-28 | 記憶素子、記憶装置、磁気ヘッド |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9818932B2 (enExample) |
| JP (1) | JP6194752B2 (enExample) |
| CN (1) | CN105684178B (enExample) |
| TW (1) | TWI639155B (enExample) |
| WO (1) | WO2015064049A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102451098B1 (ko) | 2015-09-23 | 2022-10-05 | 삼성전자주식회사 | 자기 메모리 장치 및 이의 제조 방법 |
| US11563169B2 (en) | 2015-11-18 | 2023-01-24 | Tohoku University | Magnetic tunnel junction element and magnetic memory |
| US10490732B2 (en) | 2016-03-11 | 2019-11-26 | Toshiba Memory Corporation | Magnetic memory device with sidewall layer containing boron and manufacturing method thereof |
| JP2017195269A (ja) | 2016-04-20 | 2017-10-26 | ソニー株式会社 | 磁気記憶素子 |
| JP2018032805A (ja) * | 2016-08-26 | 2018-03-01 | ソニー株式会社 | 磁気抵抗素子及び電子デバイス |
| TWI688131B (zh) * | 2016-09-14 | 2020-03-11 | 日商東芝記憶體股份有限公司 | 半導體裝置 |
| JP7018652B2 (ja) * | 2017-01-18 | 2022-02-14 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果素子の製造方法 |
| JP2020068214A (ja) * | 2017-02-28 | 2020-04-30 | Tdk株式会社 | 強磁性多層膜、磁気抵抗効果素子、及び強磁性多層膜を製造する方法 |
| US9911483B1 (en) | 2017-03-21 | 2018-03-06 | International Business Machines Corporation | Thermally-assisted spin transfer torque memory with improved bit error rate performance |
| JP2019054095A (ja) | 2017-09-14 | 2019-04-04 | 東芝メモリ株式会社 | 磁気抵抗素子 |
| US10727401B2 (en) * | 2017-11-10 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic random access memory |
| CN113517015B (zh) * | 2021-04-29 | 2024-05-14 | 中国科学院上海微系统与信息技术研究所 | 一种实现存储单元多级存储的方法及装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130814A (en) | 1998-07-28 | 2000-10-10 | International Business Machines Corporation | Current-induced magnetic switching device and memory including the same |
| JP2003017782A (ja) | 2001-07-04 | 2003-01-17 | Rikogaku Shinkokai | キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置 |
| JP2008028362A (ja) * | 2006-06-22 | 2008-02-07 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
| US20070297220A1 (en) * | 2006-06-22 | 2007-12-27 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory |
| US8374025B1 (en) * | 2007-02-12 | 2013-02-12 | Avalanche Technology, Inc. | Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer |
| US20090218645A1 (en) * | 2007-02-12 | 2009-09-03 | Yadav Technology Inc. | multi-state spin-torque transfer magnetic random access memory |
| DE102007007874A1 (de) * | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
| JP4682998B2 (ja) | 2007-03-15 | 2011-05-11 | ソニー株式会社 | 記憶素子及びメモリ |
| JP2009239121A (ja) * | 2008-03-27 | 2009-10-15 | Toshiba Corp | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
| US8223533B2 (en) * | 2008-09-26 | 2012-07-17 | Kabushiki Kaisha Toshiba | Magnetoresistive effect device and magnetic memory |
| JP5203871B2 (ja) * | 2008-09-26 | 2013-06-05 | 株式会社東芝 | 磁気抵抗効果素子及び磁気メモリ |
| JP2012043967A (ja) | 2010-08-19 | 2012-03-01 | Sony Corp | 磁気メモリ素子 |
-
2013
- 2013-10-28 JP JP2013223352A patent/JP6194752B2/ja not_active Expired - Fee Related
-
2014
- 2014-10-07 TW TW103134937A patent/TWI639155B/zh not_active IP Right Cessation
- 2014-10-20 CN CN201480057802.4A patent/CN105684178B/zh not_active Expired - Fee Related
- 2014-10-20 US US15/031,092 patent/US9818932B2/en not_active Expired - Fee Related
- 2014-10-20 WO PCT/JP2014/005318 patent/WO2015064049A1/en not_active Ceased
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