CN105684178B - 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头 - Google Patents

基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头 Download PDF

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Publication number
CN105684178B
CN105684178B CN201480057802.4A CN201480057802A CN105684178B CN 105684178 B CN105684178 B CN 105684178B CN 201480057802 A CN201480057802 A CN 201480057802A CN 105684178 B CN105684178 B CN 105684178B
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CN
China
Prior art keywords
layer
memory element
ferromagnetic layer
magnetic
magnetization
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Expired - Fee Related
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CN201480057802.4A
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English (en)
Chinese (zh)
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CN105684178A (zh
Inventor
山根和孝
细见政功
尾森弘之
K·贝塞霍
Y·希戈
内田弘之
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
CN201480057802.4A 2013-10-28 2014-10-20 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头 Expired - Fee Related CN105684178B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013223352A JP6194752B2 (ja) 2013-10-28 2013-10-28 記憶素子、記憶装置、磁気ヘッド
JP2013-223352 2013-10-28
PCT/JP2014/005318 WO2015064049A1 (en) 2013-10-28 2014-10-20 Stt mram and magnetic head

Publications (2)

Publication Number Publication Date
CN105684178A CN105684178A (zh) 2016-06-15
CN105684178B true CN105684178B (zh) 2019-02-01

Family

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Family Applications (1)

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CN201480057802.4A Expired - Fee Related CN105684178B (zh) 2013-10-28 2014-10-20 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头

Country Status (5)

Country Link
US (1) US9818932B2 (enExample)
JP (1) JP6194752B2 (enExample)
CN (1) CN105684178B (enExample)
TW (1) TWI639155B (enExample)
WO (1) WO2015064049A1 (enExample)

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KR102451098B1 (ko) 2015-09-23 2022-10-05 삼성전자주식회사 자기 메모리 장치 및 이의 제조 방법
US11563169B2 (en) 2015-11-18 2023-01-24 Tohoku University Magnetic tunnel junction element and magnetic memory
US10490732B2 (en) 2016-03-11 2019-11-26 Toshiba Memory Corporation Magnetic memory device with sidewall layer containing boron and manufacturing method thereof
JP2017195269A (ja) 2016-04-20 2017-10-26 ソニー株式会社 磁気記憶素子
JP2018032805A (ja) * 2016-08-26 2018-03-01 ソニー株式会社 磁気抵抗素子及び電子デバイス
TWI688131B (zh) * 2016-09-14 2020-03-11 日商東芝記憶體股份有限公司 半導體裝置
JP7018652B2 (ja) * 2017-01-18 2022-02-14 国立大学法人東北大学 磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果素子の製造方法
JP2020068214A (ja) * 2017-02-28 2020-04-30 Tdk株式会社 強磁性多層膜、磁気抵抗効果素子、及び強磁性多層膜を製造する方法
US9911483B1 (en) 2017-03-21 2018-03-06 International Business Machines Corporation Thermally-assisted spin transfer torque memory with improved bit error rate performance
JP2019054095A (ja) 2017-09-14 2019-04-04 東芝メモリ株式会社 磁気抵抗素子
US10727401B2 (en) * 2017-11-10 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory
CN113517015B (zh) * 2021-04-29 2024-05-14 中国科学院上海微系统与信息技术研究所 一种实现存储单元多级存储的方法及装置

Citations (3)

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CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
CN102376873A (zh) * 2010-08-19 2012-03-14 索尼公司 磁存储器元件
US8374025B1 (en) * 2007-02-12 2013-02-12 Avalanche Technology, Inc. Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer

Family Cites Families (9)

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US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ
US20070297220A1 (en) * 2006-06-22 2007-12-27 Masatoshi Yoshikawa Magnetoresistive element and magnetic memory
US20090218645A1 (en) * 2007-02-12 2009-09-03 Yadav Technology Inc. multi-state spin-torque transfer magnetic random access memory
DE102007007874A1 (de) * 2007-02-14 2008-08-21 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Silane
JP2009239121A (ja) * 2008-03-27 2009-10-15 Toshiba Corp 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
US8223533B2 (en) * 2008-09-26 2012-07-17 Kabushiki Kaisha Toshiba Magnetoresistive effect device and magnetic memory
JP5203871B2 (ja) * 2008-09-26 2013-06-05 株式会社東芝 磁気抵抗効果素子及び磁気メモリ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8374025B1 (en) * 2007-02-12 2013-02-12 Avalanche Technology, Inc. Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
CN102376873A (zh) * 2010-08-19 2012-03-14 索尼公司 磁存储器元件

Also Published As

Publication number Publication date
JP6194752B2 (ja) 2017-09-13
WO2015064049A1 (en) 2015-05-07
CN105684178A (zh) 2016-06-15
TW201532040A (zh) 2015-08-16
US20160268496A1 (en) 2016-09-15
TWI639155B (zh) 2018-10-21
JP2015088520A (ja) 2015-05-07
US9818932B2 (en) 2017-11-14

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