JP2013115300A5 - - Google Patents

Download PDF

Info

Publication number
JP2013115300A5
JP2013115300A5 JP2011261521A JP2011261521A JP2013115300A5 JP 2013115300 A5 JP2013115300 A5 JP 2013115300A5 JP 2011261521 A JP2011261521 A JP 2011261521A JP 2011261521 A JP2011261521 A JP 2011261521A JP 2013115300 A5 JP2013115300 A5 JP 2013115300A5
Authority
JP
Japan
Prior art keywords
magnetic
core
thin film
shield
upper core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011261521A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013115300A (ja
JP5982794B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011261521A priority Critical patent/JP5982794B2/ja
Priority claimed from JP2011261521A external-priority patent/JP5982794B2/ja
Priority to US13/675,725 priority patent/US8976578B2/en
Priority to CN201210479162.9A priority patent/CN103137851B/zh
Publication of JP2013115300A publication Critical patent/JP2013115300A/ja
Publication of JP2013115300A5 publication Critical patent/JP2013115300A5/ja
Application granted granted Critical
Publication of JP5982794B2 publication Critical patent/JP5982794B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011261521A 2011-11-30 2011-11-30 記憶素子、記憶装置 Active JP5982794B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011261521A JP5982794B2 (ja) 2011-11-30 2011-11-30 記憶素子、記憶装置
US13/675,725 US8976578B2 (en) 2011-11-30 2012-11-13 Memory element and memory apparatus
CN201210479162.9A CN103137851B (zh) 2011-11-30 2012-11-22 存储元件和存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011261521A JP5982794B2 (ja) 2011-11-30 2011-11-30 記憶素子、記憶装置

Publications (3)

Publication Number Publication Date
JP2013115300A JP2013115300A (ja) 2013-06-10
JP2013115300A5 true JP2013115300A5 (enExample) 2014-11-27
JP5982794B2 JP5982794B2 (ja) 2016-08-31

Family

ID=48497403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011261521A Active JP5982794B2 (ja) 2011-11-30 2011-11-30 記憶素子、記憶装置

Country Status (3)

Country Link
US (1) US8976578B2 (enExample)
JP (1) JP5982794B2 (enExample)
CN (1) CN103137851B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5987302B2 (ja) 2011-11-30 2016-09-07 ソニー株式会社 記憶素子、記憶装置
JP5862242B2 (ja) 2011-11-30 2016-02-16 ソニー株式会社 記憶素子、記憶装置
ES2658984T3 (es) * 2013-09-05 2018-03-13 Deutsches Elektronen-Synchrotron Desy Método de producción de un dispositivo magneto-electrónico multicapa y dispositivo magneto-electrónico
US10522739B2 (en) * 2015-06-26 2019-12-31 Intel Corporation Perpendicular magnetic memory with reduced switching current
CN105304771B (zh) * 2015-10-26 2018-01-16 厦门乾照光电股份有限公司 一种具有高扩展效应的发光二极管的制作方法
US10665777B2 (en) 2017-02-28 2020-05-26 Spin Memory, Inc. Precessional spin current structure with non-magnetic insertion layer for MRAM
US10672976B2 (en) 2017-02-28 2020-06-02 Spin Memory, Inc. Precessional spin current structure with high in-plane magnetization for MRAM

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
US6600184B1 (en) * 2002-03-25 2003-07-29 International Business Machines Corporation System and method for improving magnetic tunnel junction sensor magnetoresistance
US7911832B2 (en) * 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
WO2009110532A1 (ja) * 2008-03-07 2009-09-11 日本電気株式会社 半導体装置
KR101178767B1 (ko) * 2008-10-30 2012-09-07 한국과학기술연구원 이중 자기 이방성 자유층을 갖는 자기 터널 접합 구조
JP5582037B2 (ja) * 2009-01-27 2014-09-03 日本電気株式会社 不揮発ロジック回路
WO2011111473A1 (ja) * 2010-03-10 2011-09-15 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
US8884388B2 (en) * 2010-03-23 2014-11-11 Nec Corporation Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
JP5742142B2 (ja) * 2010-09-08 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
US8399941B2 (en) * 2010-11-05 2013-03-19 Grandis, Inc. Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
KR101195041B1 (ko) * 2011-05-12 2012-10-31 고려대학교 산학협력단 자기 공명 세차 현상을 이용한 스핀전달토크 자기 메모리 소자

Similar Documents

Publication Publication Date Title
JP2013115300A5 (enExample)
JP2015088520A5 (enExample)
JP2013115301A5 (enExample)
JP2013115401A5 (enExample)
WO2012003999A3 (en) Inductive couplers for use in a downhole environment
JP2011137811A5 (enExample)
JP2005108411A5 (enExample)
JP2012119053A5 (enExample)
JP2013115400A5 (enExample)
MY152697A (en) Magnetic sensor with perpendicular anisotrophy free layer and side shields
JP2009009689A5 (enExample)
JP2012230751A5 (enExample)
JP2013161514A5 (enExample)
JP2007012686A5 (enExample)
JP2012069643A5 (enExample)
JP2013054814A5 (enExample)
JP6438930B2 (ja) 磁場検出装置
JP2015197388A (ja) フラックスゲート型磁気センサ
JP2015076478A5 (enExample)
JP2010062531A5 (enExample)
JP2006310539A5 (enExample)
JP5219975B2 (ja) コイル及びトランス
TW200629307A (en) Magnetic element and method of manufacturing magnetic element
JP2017053655A (ja) 薄膜磁界センサおよびアレイ型薄膜磁界センサ
JP2008077719A (ja) 薄膜磁気ヘッド