JP2013054814A5 - - Google Patents

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Publication number
JP2013054814A5
JP2013054814A5 JP2012189572A JP2012189572A JP2013054814A5 JP 2013054814 A5 JP2013054814 A5 JP 2013054814A5 JP 2012189572 A JP2012189572 A JP 2012189572A JP 2012189572 A JP2012189572 A JP 2012189572A JP 2013054814 A5 JP2013054814 A5 JP 2013054814A5
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JP
Japan
Prior art keywords
agsn
magnetic layer
layer
head sensor
spacer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012189572A
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English (en)
Japanese (ja)
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JP5813601B2 (ja
JP2013054814A (ja
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Publication date
Priority claimed from US13/222,827 external-priority patent/US8743511B2/en
Application filed filed Critical
Publication of JP2013054814A publication Critical patent/JP2013054814A/ja
Publication of JP2013054814A5 publication Critical patent/JP2013054814A5/ja
Application granted granted Critical
Publication of JP5813601B2 publication Critical patent/JP5813601B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012189572A 2011-08-31 2012-08-30 耐食性スペーサ層を備え、より高い信号雑音比を有するcpp−gmrセンサ Expired - Fee Related JP5813601B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/222,827 2011-08-31
US13/222,827 US8743511B2 (en) 2011-08-31 2011-08-31 CPP-GMR sensor with corrosion resistent spacer layer and higher signal/noise ratio

Publications (3)

Publication Number Publication Date
JP2013054814A JP2013054814A (ja) 2013-03-21
JP2013054814A5 true JP2013054814A5 (enExample) 2015-09-17
JP5813601B2 JP5813601B2 (ja) 2015-11-17

Family

ID=47744153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012189572A Expired - Fee Related JP5813601B2 (ja) 2011-08-31 2012-08-30 耐食性スペーサ層を備え、より高い信号雑音比を有するcpp−gmrセンサ

Country Status (2)

Country Link
US (1) US8743511B2 (enExample)
JP (1) JP5813601B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014146405A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 磁気抵抗効果型の磁気ヘッドおよび磁気記録再生装置
US9047891B1 (en) 2014-05-03 2015-06-02 HGST Netherlands B.V. Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with indium-zinc-oxide (IZO) spacer layer
US9437222B1 (en) * 2015-05-30 2016-09-06 HGST Netherlands B.V. Spin torque oscillator with high spin torque efficiency and reliability
US10782153B2 (en) 2016-03-08 2020-09-22 Analog Devices Global Multiturn sensor arrangement and readout
US11460521B2 (en) 2019-03-18 2022-10-04 Analog Devices International Unlimited Company Multiturn sensor arrangement
US11181602B2 (en) 2019-06-10 2021-11-23 International Business Machines Corporation Detecting damaged TMR sensors using bias currents and outliers
US10964350B2 (en) 2019-07-09 2021-03-30 International Business Machines Corporation Setting bias currents and limiting corrosion in TMR sensors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5000779A (en) * 1988-05-18 1991-03-19 Leach & Garner Palladium based powder-metal alloys and method for making same
JP3337732B2 (ja) 1992-12-28 2002-10-21 ティーディーケイ株式会社 磁気抵抗効果素子
US5491600A (en) * 1994-05-04 1996-02-13 International Business Machines Corporation Multi-layer conductor leads in a magnetoresistive head
EP0685746A3 (en) 1994-05-30 1996-12-04 Sony Corp Magnetic resistance effect arrangement with improved thermal resistance.
US5793279A (en) * 1996-08-26 1998-08-11 Read-Rite Corporation Methods and compositions for optimizing interfacial properties of magnetoresistive sensors
CN1437772A (zh) * 2000-06-22 2003-08-20 松下电器产业株式会社 磁阻效应元件与利用此磁阻效应元件的磁阻效应型磁头及磁存储与还原装置
US6686068B2 (en) * 2001-02-21 2004-02-03 International Business Machines Corporation Heterogeneous spacers for CPP GMR stacks
US6707084B2 (en) 2002-02-06 2004-03-16 Micron Technology, Inc. Antiferromagnetically stabilized pseudo spin valve for memory applications
AU2002367881A1 (en) 2002-04-18 2003-11-03 Seagate Technology Llc Gmr spin valve structure using heusler alloy
JP2006005277A (ja) 2004-06-21 2006-01-05 Alps Electric Co Ltd 磁気検出素子
JP4309363B2 (ja) 2005-03-16 2009-08-05 株式会社東芝 磁気抵抗効果素子、磁気再生ヘッド及び磁気情報再生装置
US7558028B2 (en) * 2005-11-16 2009-07-07 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head with improved CPP sensor using Heusler alloys
JP5661995B2 (ja) 2008-12-15 2015-01-28 エイチジーエスティーネザーランドビーブイ 磁気抵抗効果型磁気ヘッド

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