JP5813601B2 - 耐食性スペーサ層を備え、より高い信号雑音比を有するｃｐｐ−ｇｍｒセンサ - Google Patents

耐食性スペーサ層を備え、より高い信号雑音比を有するｃｐｐ−ｇｍｒセンサ Download PDF

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JP5813601B2
JP5813601B2 JP2012189572A JP2012189572A JP5813601B2 JP 5813601 B2 JP5813601 B2 JP 5813601B2 JP 2012189572 A JP2012189572 A JP 2012189572A JP 2012189572 A JP2012189572 A JP 2012189572A JP 5813601 B2 JP5813601 B2 JP 5813601B2
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magnetic
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JP2013054814A5 (enExample
JP2013054814A (ja
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アール．チャイルドレス ジェフリー
アール．チャイルドレス ジェフリー
シー．リード ジョン
シー．リード ジョン
スミス ニール
スミス ニール
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エイチジーエスティーネザーランドビーブイ
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
JP2012189572A 2011-08-31 2012-08-30 耐食性スペーサ層を備え、より高い信号雑音比を有するｃｐｐ−ｇｍｒセンサ Expired - Fee Related JP5813601B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/222,827 2011-08-31
US13/222,827 US8743511B2 (en) 2011-08-31 2011-08-31 CPP-GMR sensor with corrosion resistent spacer layer and higher signal/noise ratio

Publications (3)

Publication Number Publication Date
JP2013054814A JP2013054814A (ja) 2013-03-21
JP2013054814A5 JP2013054814A5 (enExample) 2015-09-17
JP5813601B2 true JP5813601B2 (ja) 2015-11-17

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JP2012189572A Expired - Fee Related JP5813601B2 (ja) 2011-08-31 2012-08-30 耐食性スペーサ層を備え、より高い信号雑音比を有するｃｐｐ−ｇｍｒセンサ

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Country Link
US (1) US8743511B2 (enExample)
JP (1) JP5813601B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014146405A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 磁気抵抗効果型の磁気ヘッドおよび磁気記録再生装置
US9047891B1 (en) 2014-05-03 2015-06-02 HGST Netherlands B.V. Current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with indium-zinc-oxide (IZO) spacer layer
US9437222B1 (en) * 2015-05-30 2016-09-06 HGST Netherlands B.V. Spin torque oscillator with high spin torque efficiency and reliability
US10782153B2 (en) 2016-03-08 2020-09-22 Analog Devices Global Multiturn sensor arrangement and readout
US11460521B2 (en) 2019-03-18 2022-10-04 Analog Devices International Unlimited Company Multiturn sensor arrangement
US11181602B2 (en) 2019-06-10 2021-11-23 International Business Machines Corporation Detecting damaged TMR sensors using bias currents and outliers
US10964350B2 (en) 2019-07-09 2021-03-30 International Business Machines Corporation Setting bias currents and limiting corrosion in TMR sensors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5000779A (en) * 1988-05-18 1991-03-19 Leach & Garner Palladium based powder-metal alloys and method for making same
JP3337732B2 (ja) 1992-12-28 2002-10-21 ティーディーケイ株式会社 磁気抵抗効果素子
US5491600A (en) * 1994-05-04 1996-02-13 International Business Machines Corporation Multi-layer conductor leads in a magnetoresistive head
EP0685746A3 (en) 1994-05-30 1996-12-04 Sony Corp Magnetic resistance effect arrangement with improved thermal resistance.
US5793279A (en) * 1996-08-26 1998-08-11 Read-Rite Corporation Methods and compositions for optimizing interfacial properties of magnetoresistive sensors
CN1437772A (zh) * 2000-06-22 2003-08-20 松下电器产业株式会社 磁阻效应元件与利用此磁阻效应元件的磁阻效应型磁头及磁存储与还原装置
US6686068B2 (en) * 2001-02-21 2004-02-03 International Business Machines Corporation Heterogeneous spacers for CPP GMR stacks
US6707084B2 (en) 2002-02-06 2004-03-16 Micron Technology, Inc. Antiferromagnetically stabilized pseudo spin valve for memory applications
AU2002367881A1 (en) 2002-04-18 2003-11-03 Seagate Technology Llc Gmr spin valve structure using heusler alloy
JP2006005277A (ja) 2004-06-21 2006-01-05 Alps Electric Co Ltd 磁気検出素子
JP4309363B2 (ja) 2005-03-16 2009-08-05 株式会社東芝 磁気抵抗効果素子、磁気再生ヘッド及び磁気情報再生装置
US7558028B2 (en) * 2005-11-16 2009-07-07 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head with improved CPP sensor using Heusler alloys
JP5661995B2 (ja) 2008-12-15 2015-01-28 エイチジーエスティーネザーランドビーブイ 磁気抵抗効果型磁気ヘッド

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US20130052484A1 (en) 2013-02-28
US8743511B2 (en) 2014-06-03
JP2013054814A (ja) 2013-03-21

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