JP2012054439A5 - - Google Patents

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Publication number
JP2012054439A5
JP2012054439A5 JP2010196418A JP2010196418A JP2012054439A5 JP 2012054439 A5 JP2012054439 A5 JP 2012054439A5 JP 2010196418 A JP2010196418 A JP 2010196418A JP 2010196418 A JP2010196418 A JP 2010196418A JP 2012054439 A5 JP2012054439 A5 JP 2012054439A5
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JP
Japan
Prior art keywords
layer
magnetization
thermal stability
film
alloy
Prior art date
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Pending
Application number
JP2010196418A
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English (en)
Japanese (ja)
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JP2012054439A (ja
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Publication date
Application filed filed Critical
Priority to JP2010196418A priority Critical patent/JP2012054439A/ja
Priority claimed from JP2010196418A external-priority patent/JP2012054439A/ja
Priority to TW100129116A priority patent/TW201222546A/zh
Priority to KR1020110084330A priority patent/KR20120023560A/ko
Priority to US13/217,925 priority patent/US8750035B2/en
Priority to CN2011102497759A priority patent/CN102385923A/zh
Publication of JP2012054439A publication Critical patent/JP2012054439A/ja
Publication of JP2012054439A5 publication Critical patent/JP2012054439A5/ja
Priority to US14/263,657 priority patent/US9299916B2/en
Pending legal-status Critical Current

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JP2010196418A 2010-09-02 2010-09-02 記憶素子及び記憶装置 Pending JP2012054439A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010196418A JP2012054439A (ja) 2010-09-02 2010-09-02 記憶素子及び記憶装置
TW100129116A TW201222546A (en) 2010-09-02 2011-08-15 Memory element and memory device
KR1020110084330A KR20120023560A (ko) 2010-09-02 2011-08-24 기억 소자 및 기억 장치
US13/217,925 US8750035B2 (en) 2010-09-02 2011-08-25 Memory element and memory device
CN2011102497759A CN102385923A (zh) 2010-09-02 2011-08-26 存储元件和存储设备
US14/263,657 US9299916B2 (en) 2010-09-02 2014-04-28 Memory element and memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010196418A JP2012054439A (ja) 2010-09-02 2010-09-02 記憶素子及び記憶装置

Publications (2)

Publication Number Publication Date
JP2012054439A JP2012054439A (ja) 2012-03-15
JP2012054439A5 true JP2012054439A5 (enExample) 2013-09-19

Family

ID=45770637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010196418A Pending JP2012054439A (ja) 2010-09-02 2010-09-02 記憶素子及び記憶装置

Country Status (5)

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US (2) US8750035B2 (enExample)
JP (1) JP2012054439A (enExample)
KR (1) KR20120023560A (enExample)
CN (1) CN102385923A (enExample)
TW (1) TW201222546A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP5742142B2 (ja) * 2010-09-08 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
CN102637939B (zh) * 2012-04-28 2014-06-11 中国科学院苏州纳米技术与纳米仿生研究所 一种基于垂直磁化自由层的自旋微波振荡器及其制造方法
KR102433703B1 (ko) * 2015-11-30 2022-08-19 에스케이하이닉스 주식회사 전자 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
US6845038B1 (en) * 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
JP4277870B2 (ja) * 2006-04-17 2009-06-10 ソニー株式会社 記憶素子及びメモリ
JP2007294737A (ja) * 2006-04-26 2007-11-08 Hitachi Ltd トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP2008010590A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP4738395B2 (ja) * 2007-09-25 2011-08-03 株式会社東芝 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009081215A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
JP5023395B2 (ja) * 2007-12-18 2012-09-12 株式会社東芝 磁気ランダムアクセスメモリ及びその書き込み方法
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ

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