JP6572513B2 - 磁気メモリ素子 - Google Patents
磁気メモリ素子 Download PDFInfo
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- JP6572513B2 JP6572513B2 JP2017536563A JP2017536563A JP6572513B2 JP 6572513 B2 JP6572513 B2 JP 6572513B2 JP 2017536563 A JP2017536563 A JP 2017536563A JP 2017536563 A JP2017536563 A JP 2017536563A JP 6572513 B2 JP6572513 B2 JP 6572513B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Description
本発明の一実施例において、前記絶縁層は、AlOx、MgO、TaOx又はZrOxからなる。
一方、本特許の効果を有するために、垂直磁化異方性を有する自由磁性層であるCoFeB層に隣接して反強磁性特性を有するIrMn(Ir:Mn=1:3)層が備わった実施例として、(Ta(5nm)/IrMn(5nm)/CoFeB(1nm)/MgO(1.6nm))を準備した。
前記比較例1及び実施例に対してそれぞれスピン−軌道スピン伝達トルクの符号を測定した。この時、幅が5μmであるホールバでパターンした後、交流電流(周波数=50Hz)を印加しながらlock−in装備を用いて1st harmonicホール信号V1wと2nd harmonicホール信号V2wを測定した。
Claims (8)
- 固定磁性層、絶縁層及び自由磁性層がそれぞれ順に積層されたトンネル接合単位セルと、
前記自由磁性層に隣接して配置された反強磁性(antiferromagnetic)層及び前記反強磁性層に隣接して配置され、面内磁気異方性を有する強磁性層を有する導線体と、
前記トンネル接合単位セルそれぞれに独立的に選択電圧を印加する電圧印加部と、を含み、
前記自由磁性層は垂直磁気異方性を有し、前記導線体に面内電流を供給し、
前記面内電流及び前記選択電圧によってトンネル接合単位セルのそれぞれの磁化方向を選択的に変化させることを特徴とする磁気メモリ素子。 - 前記固定磁性層及び前記自由磁性層は、Fe、Co、Ni、B、Si、Zr、Pt、Tb、Pd、Cu及びWがなす強磁性体群から選択される少なくとも一つの物質からなることを特徴とする請求項1に記載の磁気メモリ素子。
- 前記絶縁層は、AlOx、MgO、TaOx、ZrOx、及びこれらの混合物の中から選択される物質からなることを特徴とする請求項1に記載の磁気メモリ素子。
- 前記導線体に含まれた前記反強磁性層及び前記強磁性層のそれぞれは、Co、Fe、Ni、O、N、Cu、Ta、Pt、W、Hf、Ir、Rh、Pd、Gd、Bi、Ir及びMnがなす金属群から選択される少なくとも一つを含むことを特徴とする請求項1に記載の磁気メモリ素子。
- 前記反強磁性層は、フェリ磁性特性を有する物質からなり、前記自由磁性層に面接するように備えることを特徴とする請求項1に記載の磁気メモリ素子。
- 前記導線体は前記自由磁性層に水平方向の交換バイアス磁場を誘導し、前記導線体に流れる電流はスピン−軌道スピントルクを発生させることを特徴とする請求項1に記載の磁気メモリ素子。
- 前記反強磁性層及び前記強磁性層は、相互面接するように備えることを特徴とする請求項1に記載の磁気メモリ素子。
- 前記反強磁性層及び前記強磁性層は水平磁場下で熱的アニーリング工程を通じて前記強磁性層は前記反強磁性層に水平方向の交換バイアスを誘導することを特徴とする請求項1に記載の磁気メモリ素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2015-0066853 | 2015-05-13 | ||
KR1020150066853A KR101683440B1 (ko) | 2015-05-13 | 2015-05-13 | 자기 메모리 소자 |
PCT/KR2016/004964 WO2016182354A1 (ko) | 2015-05-13 | 2016-05-12 | 자기 메모리 소자 |
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JP2018505555A JP2018505555A (ja) | 2018-02-22 |
JP6572513B2 true JP6572513B2 (ja) | 2019-09-11 |
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JP2017536563A Active JP6572513B2 (ja) | 2015-05-13 | 2016-05-12 | 磁気メモリ素子 |
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US (1) | US10127956B2 (ja) |
EP (1) | EP3297049B1 (ja) |
JP (1) | JP6572513B2 (ja) |
KR (1) | KR101683440B1 (ja) |
WO (1) | WO2016182354A1 (ja) |
Families Citing this family (20)
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CN108292705B (zh) | 2015-11-27 | 2022-01-18 | Tdk株式会社 | 自旋流磁化反转元件、磁阻效应元件及磁存储器 |
JP6972542B2 (ja) * | 2016-12-02 | 2021-11-24 | Tdk株式会社 | スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ |
KR101868267B1 (ko) * | 2017-01-26 | 2018-06-15 | 고려대학교 산학협력단 | 고조파 홀 전압 분석 방법 |
KR102073467B1 (ko) | 2018-01-30 | 2020-02-04 | 고려대학교 산학협력단 | 교류전류를 이용한 스핀 궤도 토크 자기 메모리 소자 |
FR3078443B1 (fr) * | 2018-02-23 | 2023-01-13 | Commissariat Energie Atomique | Jonction tunnel magnetique a anisotropie de forme perpendiculaire et variabilite minimisee, point memoire et element logique comprenant la jonction tunnel magnetique, procede de fabrication de la jonction tunnel magnetique |
JP7052448B2 (ja) | 2018-03-16 | 2022-04-12 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び発振器 |
JPWO2020090719A1 (ja) * | 2018-10-31 | 2021-09-30 | 国立研究開発法人理化学研究所 | スピントルク発生素子、その製造方法、及び、磁化制御装置 |
JP2020072239A (ja) * | 2018-11-02 | 2020-05-07 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 磁気トンネル接合素子及び磁気抵抗メモリ装置 |
WO2020166722A1 (ja) * | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
US11456100B2 (en) * | 2019-05-17 | 2022-09-27 | Taiwan Semiconductor Manufacturing Company Ltd. | MRAM stacks, MRAM devices and methods of forming the same |
WO2020242213A1 (ko) * | 2019-05-28 | 2020-12-03 | 서울대학교산학협력단 | 자기 메모리 장치 및 그것의 동작 방법 |
CN112151089B (zh) * | 2019-06-28 | 2022-09-30 | 中电海康集团有限公司 | 存储器 |
KR20210040229A (ko) | 2019-10-02 | 2021-04-13 | 삼성전자주식회사 | 자기 기억 소자 |
KR102298837B1 (ko) * | 2020-03-19 | 2021-09-06 | 고려대학교 산학협력단 | 텅스텐 질화물을 가지는 스핀궤도토크 스위칭 소자 |
CN111740011A (zh) * | 2020-06-24 | 2020-10-02 | 中国科学院微电子研究所 | 自旋轨道扭矩磁随机存储单元、存储阵列及存储器 |
KR102550681B1 (ko) * | 2021-07-21 | 2023-06-30 | 한양대학교 산학협력단 | 자화 씨드층과 자화 자유층 접합 계면의 비대칭 구조를 이용하는 스핀 소자 |
KR20230046561A (ko) | 2021-09-30 | 2023-04-06 | 현대자동차주식회사 | 스핀오빗토크 소자 및 스핀오빗토크 소자 제조 방법 |
WO2023112087A1 (ja) * | 2021-12-13 | 2023-06-22 | Tdk株式会社 | 磁化回転素子、磁気抵抗効果素子及び磁気メモリ |
KR20240011992A (ko) | 2022-07-20 | 2024-01-29 | 현대자동차주식회사 | 스핀오빗토크 소자 어레이 및 스핀오빗토크 소자 어레이 제조 방법 |
KR20240011991A (ko) | 2022-07-20 | 2024-01-29 | 현대자동차주식회사 | 수직 교환 결합 기반의 자기 메모리 소자 및 자기 메모리 소자 제조 방법 |
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JP2002359413A (ja) * | 2001-05-31 | 2002-12-13 | National Institute Of Advanced Industrial & Technology | 強磁性トンネル磁気抵抗素子 |
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KR102078850B1 (ko) * | 2013-03-15 | 2020-02-18 | 삼성전자 주식회사 | 자기 메모리 소자 및 이에 대한 정보 쓰기 방법 |
KR20150015602A (ko) * | 2013-07-31 | 2015-02-11 | 한양대학교 산학협력단 | 메모리 소자 |
KR20150095187A (ko) * | 2014-02-11 | 2015-08-20 | 한양대학교 산학협력단 | 수직자기이방성을 갖는 mtj 구조 |
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2015
- 2015-05-13 KR KR1020150066853A patent/KR101683440B1/ko active IP Right Grant
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2016
- 2016-05-12 WO PCT/KR2016/004964 patent/WO2016182354A1/ko active Application Filing
- 2016-05-12 JP JP2017536563A patent/JP6572513B2/ja active Active
- 2016-05-12 EP EP16793000.7A patent/EP3297049B1/en active Active
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Also Published As
Publication number | Publication date |
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JP2018505555A (ja) | 2018-02-22 |
EP3297049A1 (en) | 2018-03-21 |
KR20160133821A (ko) | 2016-11-23 |
WO2016182354A1 (ko) | 2016-11-17 |
EP3297049B1 (en) | 2021-01-13 |
KR101683440B1 (ko) | 2016-12-07 |
EP3297049A4 (en) | 2019-01-02 |
US20170316813A1 (en) | 2017-11-02 |
US10127956B2 (en) | 2018-11-13 |
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