JP2012054439A - 記憶素子及び記憶装置 - Google Patents

記憶素子及び記憶装置 Download PDF

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Publication number
JP2012054439A
JP2012054439A JP2010196418A JP2010196418A JP2012054439A JP 2012054439 A JP2012054439 A JP 2012054439A JP 2010196418 A JP2010196418 A JP 2010196418A JP 2010196418 A JP2010196418 A JP 2010196418A JP 2012054439 A JP2012054439 A JP 2012054439A
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JP
Japan
Prior art keywords
layer
magnetization
storage layer
storage
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010196418A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012054439A5 (enExample
Inventor
Kazuhiro Bessho
和宏 別所
Masakatsu Hosomi
政功 細見
Hiroyuki Omori
広之 大森
Yutaka Higo
豊 肥後
Ichiyo Yamane
一陽 山根
Hiroyuki Uchida
裕行 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010196418A priority Critical patent/JP2012054439A/ja
Priority to TW100129116A priority patent/TW201222546A/zh
Priority to KR1020110084330A priority patent/KR20120023560A/ko
Priority to US13/217,925 priority patent/US8750035B2/en
Priority to CN2011102497759A priority patent/CN102385923A/zh
Publication of JP2012054439A publication Critical patent/JP2012054439A/ja
Publication of JP2012054439A5 publication Critical patent/JP2012054439A5/ja
Priority to US14/263,657 priority patent/US9299916B2/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
JP2010196418A 2010-09-02 2010-09-02 記憶素子及び記憶装置 Pending JP2012054439A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010196418A JP2012054439A (ja) 2010-09-02 2010-09-02 記憶素子及び記憶装置
TW100129116A TW201222546A (en) 2010-09-02 2011-08-15 Memory element and memory device
KR1020110084330A KR20120023560A (ko) 2010-09-02 2011-08-24 기억 소자 및 기억 장치
US13/217,925 US8750035B2 (en) 2010-09-02 2011-08-25 Memory element and memory device
CN2011102497759A CN102385923A (zh) 2010-09-02 2011-08-26 存储元件和存储设备
US14/263,657 US9299916B2 (en) 2010-09-02 2014-04-28 Memory element and memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010196418A JP2012054439A (ja) 2010-09-02 2010-09-02 記憶素子及び記憶装置

Publications (2)

Publication Number Publication Date
JP2012054439A true JP2012054439A (ja) 2012-03-15
JP2012054439A5 JP2012054439A5 (enExample) 2013-09-19

Family

ID=45770637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010196418A Pending JP2012054439A (ja) 2010-09-02 2010-09-02 記憶素子及び記憶装置

Country Status (5)

Country Link
US (2) US8750035B2 (enExample)
JP (1) JP2012054439A (enExample)
KR (1) KR20120023560A (enExample)
CN (1) CN102385923A (enExample)
TW (1) TW201222546A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP5742142B2 (ja) * 2010-09-08 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
CN102637939B (zh) * 2012-04-28 2014-06-11 中国科学院苏州纳米技术与纳米仿生研究所 一种基于垂直磁化自由层的自旋微波振荡器及其制造方法
KR102433703B1 (ko) * 2015-11-30 2022-08-19 에스케이하이닉스 주식회사 전자 장치

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294737A (ja) * 2006-04-26 2007-11-08 Hitachi Ltd トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP2008010590A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2008227388A (ja) * 2007-03-15 2008-09-25 Sony Corp 記憶素子及びメモリ
JP2009081216A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2009081215A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
JP2009151835A (ja) * 2007-12-18 2009-07-09 Toshiba Corp 磁気ランダムアクセスメモリ及びその書き込み方法
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
US6845038B1 (en) * 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
JP4277870B2 (ja) * 2006-04-17 2009-06-10 ソニー株式会社 記憶素子及びメモリ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294737A (ja) * 2006-04-26 2007-11-08 Hitachi Ltd トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP2008010590A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2008227388A (ja) * 2007-03-15 2008-09-25 Sony Corp 記憶素子及びメモリ
JP2009081216A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009081215A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
JP2009151835A (ja) * 2007-12-18 2009-07-09 Toshiba Corp 磁気ランダムアクセスメモリ及びその書き込み方法
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
S.IKEDA（他９名）: "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction", NATURE MATERIALS, vol. 9, JPN6014033717, 11 July 2010 (2010-07-11), GB, pages 721 - 724, ISSN: 0002873087 *
S.ISHIBASHI（他１０名）: "Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions", APPLIED PHYSICS EXPRESS, vol. Volume 3, Number 7, 073001, JPN7015001415, 18 June 2010 (2010-06-18), US, pages 1 - 3, ISSN: 0003080467 *
S.YATAKA（他６名）: "Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB/MgO/CoFeB", JOURNAL OF APPLIED PHYSICS, vol. Volume 105, Issue 7, 07D131, JPN7015001414, 2009, US, pages 1 - 3, ISSN: 0003080466 *

Also Published As

Publication number Publication date
US20140231943A1 (en) 2014-08-21
CN102385923A (zh) 2012-03-21
US20120057403A1 (en) 2012-03-08
KR20120023560A (ko) 2012-03-13
US9299916B2 (en) 2016-03-29
US8750035B2 (en) 2014-06-10
TW201222546A (en) 2012-06-01

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