TW201222546A - Memory element and memory device - Google Patents
Memory element and memory device Download PDFInfo
- Publication number
- TW201222546A TW201222546A TW100129116A TW100129116A TW201222546A TW 201222546 A TW201222546 A TW 201222546A TW 100129116 A TW100129116 A TW 100129116A TW 100129116 A TW100129116 A TW 100129116A TW 201222546 A TW201222546 A TW 201222546A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- memory
- magnetization
- memory layer
- memory element
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 291
- 230000005415 magnetization Effects 0.000 claims abstract description 192
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 28
- 239000000956 alloy Substances 0.000 claims abstract description 28
- 230000005292 diamagnetic effect Effects 0.000 claims abstract description 27
- 229910052742 iron Inorganic materials 0.000 claims abstract description 6
- 238000003475 lamination Methods 0.000 claims abstract description 6
- 230000005291 magnetic effect Effects 0.000 claims description 86
- 229910020598 Co Fe Inorganic materials 0.000 claims description 13
- 229910002519 Co-Fe Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 4
- 239000003302 ferromagnetic material Substances 0.000 claims description 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 abstract description 9
- 229920006395 saturated elastomer Polymers 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 281
- 230000005294 ferromagnetic effect Effects 0.000 description 23
- 239000000203 mixture Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 13
- 239000000395 magnesium oxide Substances 0.000 description 13
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 13
- 238000005259 measurement Methods 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 230000033001 locomotion Effects 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910003321 CoFe Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910000640 Fe alloy Inorganic materials 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000003936 working memory Effects 0.000 description 2
- SHXWCVYOXRDMCX-UHFFFAOYSA-N 3,4-methylenedioxymethamphetamine Chemical compound CNC(C)CC1=CC=C2OCOC2=C1 SHXWCVYOXRDMCX-UHFFFAOYSA-N 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 241000233866 Fungi Species 0.000 description 1
- 229910000858 La alloy Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 108010063499 Sigma Factor Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010196418A JP2012054439A (ja) | 2010-09-02 | 2010-09-02 | 記憶素子及び記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201222546A true TW201222546A (en) | 2012-06-01 |
Family
ID=45770637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100129116A TW201222546A (en) | 2010-09-02 | 2011-08-15 | Memory element and memory device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8750035B2 (enExample) |
| JP (1) | JP2012054439A (enExample) |
| KR (1) | KR20120023560A (enExample) |
| CN (1) | CN102385923A (enExample) |
| TW (1) | TW201222546A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5786341B2 (ja) * | 2010-09-06 | 2015-09-30 | ソニー株式会社 | 記憶素子、メモリ装置 |
| JP5742142B2 (ja) * | 2010-09-08 | 2015-07-01 | ソニー株式会社 | 記憶素子、メモリ装置 |
| JP2012064623A (ja) * | 2010-09-14 | 2012-03-29 | Sony Corp | 記憶素子、メモリ装置 |
| CN102637939B (zh) * | 2012-04-28 | 2014-06-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种基于垂直磁化自由层的自旋微波振荡器及其制造方法 |
| KR102433703B1 (ko) * | 2015-11-30 | 2022-08-19 | 에스케이하이닉스 주식회사 | 전자 장치 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130814A (en) | 1998-07-28 | 2000-10-10 | International Business Machines Corporation | Current-induced magnetic switching device and memory including the same |
| JP2002329905A (ja) * | 2001-05-02 | 2002-11-15 | Fujitsu Ltd | Ｃｐｐ構造磁気抵抗効果素子およびその製造方法 |
| JP2003017782A (ja) | 2001-07-04 | 2003-01-17 | Rikogaku Shinkokai | キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置 |
| WO2004055906A1 (ja) * | 2002-12-13 | 2004-07-01 | Japan Science And Technology Agency | スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜 |
| US6845038B1 (en) * | 2003-02-01 | 2005-01-18 | Alla Mikhailovna Shukh | Magnetic tunnel junction memory device |
| US7242045B2 (en) | 2004-02-19 | 2007-07-10 | Grandis, Inc. | Spin transfer magnetic element having low saturation magnetization free layers |
| US7576956B2 (en) * | 2004-07-26 | 2009-08-18 | Grandis Inc. | Magnetic tunnel junction having diffusion stop layer |
| JP4277870B2 (ja) * | 2006-04-17 | 2009-06-10 | ソニー株式会社 | 記憶素子及びメモリ |
| JP2007294737A (ja) * | 2006-04-26 | 2007-11-08 | Hitachi Ltd | トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ |
| JP2008010590A (ja) * | 2006-06-28 | 2008-01-17 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
| JP4682998B2 (ja) * | 2007-03-15 | 2011-05-11 | ソニー株式会社 | 記憶素子及びメモリ |
| JP4738395B2 (ja) * | 2007-09-25 | 2011-08-03 | 株式会社東芝 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
| JP2009081215A (ja) * | 2007-09-25 | 2009-04-16 | Toshiba Corp | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
| JP2009081315A (ja) * | 2007-09-26 | 2009-04-16 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
| JP2009094104A (ja) * | 2007-10-03 | 2009-04-30 | Toshiba Corp | 磁気抵抗素子 |
| JP5023395B2 (ja) * | 2007-12-18 | 2012-09-12 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその書き込み方法 |
| JP2010016408A (ja) * | 2009-10-19 | 2010-01-21 | Toshiba Corp | 磁気抵抗素子及び磁気メモリ |
-
2010
- 2010-09-02 JP JP2010196418A patent/JP2012054439A/ja active Pending
-
2011
- 2011-08-15 TW TW100129116A patent/TW201222546A/zh unknown
- 2011-08-24 KR KR1020110084330A patent/KR20120023560A/ko not_active Withdrawn
- 2011-08-25 US US13/217,925 patent/US8750035B2/en not_active Expired - Fee Related
- 2011-08-26 CN CN2011102497759A patent/CN102385923A/zh active Pending
-
2014
- 2014-04-28 US US14/263,657 patent/US9299916B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20140231943A1 (en) | 2014-08-21 |
| CN102385923A (zh) | 2012-03-21 |
| US20120057403A1 (en) | 2012-03-08 |
| KR20120023560A (ko) | 2012-03-13 |
| US9299916B2 (en) | 2016-03-29 |
| JP2012054439A (ja) | 2012-03-15 |
| US8750035B2 (en) | 2014-06-10 |
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