CN102385923A - 存储元件和存储设备 - Google Patents

存储元件和存储设备 Download PDF

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Publication number
CN102385923A
CN102385923A CN2011102497759A CN201110249775A CN102385923A CN 102385923 A CN102385923 A CN 102385923A CN 2011102497759 A CN2011102497759 A CN 2011102497759A CN 201110249775 A CN201110249775 A CN 201110249775A CN 102385923 A CN102385923 A CN 102385923A
Authority
CN
China
Prior art keywords
layer
magnetization
memory
memory element
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102497759A
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English (en)
Chinese (zh)
Inventor
别所和宏
细见政功
大森广之
肥后丰
山根一阳
内田裕行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102385923A publication Critical patent/CN102385923A/zh
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
CN2011102497759A 2010-09-02 2011-08-26 存储元件和存储设备 Pending CN102385923A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-196418 2010-09-02
JP2010196418A JP2012054439A (ja) 2010-09-02 2010-09-02 記憶素子及び記憶装置

Publications (1)

Publication Number Publication Date
CN102385923A true CN102385923A (zh) 2012-03-21

Family

ID=45770637

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011102497759A Pending CN102385923A (zh) 2010-09-02 2011-08-26 存储元件和存储设备

Country Status (5)

Country Link
US (2) US8750035B2 (enExample)
JP (1) JP2012054439A (enExample)
KR (1) KR20120023560A (enExample)
CN (1) CN102385923A (enExample)
TW (1) TW201222546A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637939A (zh) * 2012-04-28 2012-08-15 中国科学院苏州纳米技术与纳米仿生研究所 一种基于垂直磁化自由层的自旋微波振荡器及其制造方法
CN106816173A (zh) * 2015-11-30 2017-06-09 爱思开海力士有限公司 电子设备

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP5742142B2 (ja) * 2010-09-08 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
US20090080238A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetoresistive random access memory including the same
US20090080124A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetoresistive random access memory including the same
CN101399313A (zh) * 2007-09-26 2009-04-01 株式会社东芝 磁阻元件以及磁存储器

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Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
EP2249356A1 (en) * 2002-12-13 2010-11-10 Japan Science and Technology Agency Spin injection device, magnetic apparatus using the same, and magnetic thin film used for them
US6845038B1 (en) * 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
JP4277870B2 (ja) * 2006-04-17 2009-06-10 ソニー株式会社 記憶素子及びメモリ
JP2007294737A (ja) * 2006-04-26 2007-11-08 Hitachi Ltd トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP2008010590A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
JP5023395B2 (ja) * 2007-12-18 2012-09-12 株式会社東芝 磁気ランダムアクセスメモリ及びその書き込み方法
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器
US20090080238A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetoresistive random access memory including the same
US20090080124A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetoresistive random access memory including the same
CN101399313A (zh) * 2007-09-26 2009-04-01 株式会社东芝 磁阻元件以及磁存储器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
S.LKEDA等: "A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction", 《NATURE MATERIALS》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637939A (zh) * 2012-04-28 2012-08-15 中国科学院苏州纳米技术与纳米仿生研究所 一种基于垂直磁化自由层的自旋微波振荡器及其制造方法
CN102637939B (zh) * 2012-04-28 2014-06-11 中国科学院苏州纳米技术与纳米仿生研究所 一种基于垂直磁化自由层的自旋微波振荡器及其制造方法
CN106816173A (zh) * 2015-11-30 2017-06-09 爱思开海力士有限公司 电子设备
CN106816173B (zh) * 2015-11-30 2020-10-30 爱思开海力士有限公司 电子设备

Also Published As

Publication number Publication date
US20140231943A1 (en) 2014-08-21
TW201222546A (en) 2012-06-01
US8750035B2 (en) 2014-06-10
JP2012054439A (ja) 2012-03-15
KR20120023560A (ko) 2012-03-13
US20120057403A1 (en) 2012-03-08
US9299916B2 (en) 2016-03-29

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Application publication date: 20120321