JP2012059906A5 - - Google Patents

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Publication number
JP2012059906A5
JP2012059906A5 JP2010201526A JP2010201526A JP2012059906A5 JP 2012059906 A5 JP2012059906 A5 JP 2012059906A5 JP 2010201526 A JP2010201526 A JP 2010201526A JP 2010201526 A JP2010201526 A JP 2010201526A JP 2012059906 A5 JP2012059906 A5 JP 2012059906A5
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JP
Japan
Prior art keywords
magnetization
thermal stability
layer
composition
storage layer
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Pending
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JP2010201526A
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English (en)
Japanese (ja)
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JP2012059906A (ja
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Publication date
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Priority to JP2010201526A priority Critical patent/JP2012059906A/ja
Priority claimed from JP2010201526A external-priority patent/JP2012059906A/ja
Priority to US13/219,875 priority patent/US9025362B2/en
Priority to CN201110259029.8A priority patent/CN102403027B/zh
Publication of JP2012059906A publication Critical patent/JP2012059906A/ja
Publication of JP2012059906A5 publication Critical patent/JP2012059906A5/ja
Priority to US14/590,339 priority patent/US9735343B2/en
Priority to US15/646,544 priority patent/US10374146B2/en
Pending legal-status Critical Current

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JP2010201526A 2010-09-09 2010-09-09 記憶素子、メモリ装置 Pending JP2012059906A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010201526A JP2012059906A (ja) 2010-09-09 2010-09-09 記憶素子、メモリ装置
US13/219,875 US9025362B2 (en) 2010-09-09 2011-08-29 Memory element and memory device
CN201110259029.8A CN102403027B (zh) 2010-09-09 2011-09-02 存储元件和存储装置
US14/590,339 US9735343B2 (en) 2010-09-09 2015-01-06 Magnetic memory device and element
US15/646,544 US10374146B2 (en) 2010-09-09 2017-07-11 Memory element and memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010201526A JP2012059906A (ja) 2010-09-09 2010-09-09 記憶素子、メモリ装置

Publications (2)

Publication Number Publication Date
JP2012059906A JP2012059906A (ja) 2012-03-22
JP2012059906A5 true JP2012059906A5 (enExample) 2013-10-10

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ID=45806599

Family Applications (1)

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JP2010201526A Pending JP2012059906A (ja) 2010-09-09 2010-09-09 記憶素子、メモリ装置

Country Status (3)

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US (3) US9025362B2 (enExample)
JP (1) JP2012059906A (enExample)
CN (1) CN102403027B (enExample)

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CN107564931A (zh) * 2016-07-06 2018-01-09 中电海康集团有限公司 一种基于共源电阻技术的磁性随机存取存储器及其共源结构制造工艺
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JP2023042247A (ja) 2021-09-14 2023-03-27 キオクシア株式会社 メモリデバイス
CN115188882A (zh) * 2022-07-08 2022-10-14 中国科学技术大学 一种用于调控金属性铁磁体磁性的器件、制备方法及其应用

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JP5740878B2 (ja) * 2010-09-14 2015-07-01 ソニー株式会社 記憶素子、メモリ装置

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