JP2012160681A5 - - Google Patents

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Publication number
JP2012160681A5
JP2012160681A5 JP2011021342A JP2011021342A JP2012160681A5 JP 2012160681 A5 JP2012160681 A5 JP 2012160681A5 JP 2011021342 A JP2011021342 A JP 2011021342A JP 2011021342 A JP2011021342 A JP 2011021342A JP 2012160681 A5 JP2012160681 A5 JP 2012160681A5
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JP
Japan
Prior art keywords
magnetization
memory
layer
thermal stability
composition
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Ceased
Application number
JP2011021342A
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English (en)
Japanese (ja)
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JP2012160681A (ja
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Publication date
Application filed filed Critical
Priority to JP2011021342A priority Critical patent/JP2012160681A/ja
Priority claimed from JP2011021342A external-priority patent/JP2012160681A/ja
Priority to CN2012100232156A priority patent/CN102629489A/zh
Priority to US13/358,016 priority patent/US20120199922A1/en
Publication of JP2012160681A publication Critical patent/JP2012160681A/ja
Publication of JP2012160681A5 publication Critical patent/JP2012160681A5/ja
Ceased legal-status Critical Current

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JP2011021342A 2011-02-03 2011-02-03 記憶素子、メモリ装置 Ceased JP2012160681A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011021342A JP2012160681A (ja) 2011-02-03 2011-02-03 記憶素子、メモリ装置
CN2012100232156A CN102629489A (zh) 2011-02-03 2012-01-20 存储元件和存储器装置
US13/358,016 US20120199922A1 (en) 2011-02-03 2012-01-25 Storage element and memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011021342A JP2012160681A (ja) 2011-02-03 2011-02-03 記憶素子、メモリ装置

Publications (2)

Publication Number Publication Date
JP2012160681A JP2012160681A (ja) 2012-08-23
JP2012160681A5 true JP2012160681A5 (enExample) 2014-03-13

Family

ID=46587735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011021342A Ceased JP2012160681A (ja) 2011-02-03 2011-02-03 記憶素子、メモリ装置

Country Status (3)

Country Link
US (1) US20120199922A1 (enExample)
JP (1) JP2012160681A (enExample)
CN (1) CN102629489A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
US8852760B2 (en) * 2012-04-17 2014-10-07 Headway Technologies, Inc. Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
JP6173854B2 (ja) 2013-09-20 2017-08-02 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
JP6173855B2 (ja) * 2013-09-20 2017-08-02 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
US9537088B1 (en) * 2015-07-13 2017-01-03 Micron Technology, Inc. Magnetic tunnel junctions
US10263178B2 (en) 2016-09-15 2019-04-16 Toshiba Memory Corporation Magnetic memory device
US12089502B2 (en) 2019-01-30 2024-09-10 Sony Semiconductor Solutions Corporation Magnetoresistance effect element, storage element, and electronic device
CN112753099B (zh) * 2019-03-28 2024-04-16 Tdk株式会社 存储元件、半导体装置、磁记录阵列和存储元件的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4100025B2 (ja) * 2002-04-09 2008-06-11 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
JP5096702B2 (ja) * 2005-07-28 2012-12-12 株式会社日立製作所 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ
JP4187021B2 (ja) * 2005-12-02 2008-11-26 ソニー株式会社 記憶素子及びメモリ
JP2008117930A (ja) * 2006-11-02 2008-05-22 Sony Corp 記憶素子、メモリ
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP4738395B2 (ja) * 2007-09-25 2011-08-03 株式会社東芝 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2011008849A (ja) * 2009-06-24 2011-01-13 Sony Corp メモリ及び書き込み制御方法
US8331141B2 (en) * 2009-08-05 2012-12-11 Alexander Mikhailovich Shukh Multibit cell of magnetic random access memory with perpendicular magnetization
US8259420B2 (en) * 2010-02-01 2012-09-04 Headway Technologies, Inc. TMR device with novel free layer structure
JP5725735B2 (ja) * 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5232206B2 (ja) * 2010-09-21 2013-07-10 株式会社東芝 磁気抵抗素子及び磁気ランダムアクセスメモリ
US8470462B2 (en) * 2010-11-30 2013-06-25 Magic Technologies, Inc. Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

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