JP2012160681A - 記憶素子、メモリ装置 - Google Patents

記憶素子、メモリ装置 Download PDF

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Publication number
JP2012160681A
JP2012160681A JP2011021342A JP2011021342A JP2012160681A JP 2012160681 A JP2012160681 A JP 2012160681A JP 2011021342 A JP2011021342 A JP 2011021342A JP 2011021342 A JP2011021342 A JP 2011021342A JP 2012160681 A JP2012160681 A JP 2012160681A
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JP
Japan
Prior art keywords
layer
magnetization
memory
storage
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2011021342A
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English (en)
Japanese (ja)
Other versions
JP2012160681A5 (enExample
Inventor
Hiroyuki Uchida
裕行 内田
Masakatsu Hosomi
政功 細見
Hiroyuki Omori
広之 大森
Kazuhiro Bessho
和宏 別所
Yutaka Higo
豊 肥後
Tetsuya Asayama
徹哉 浅山
Kazuaki Yamane
一陽 山根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011021342A priority Critical patent/JP2012160681A/ja
Priority to CN2012100232156A priority patent/CN102629489A/zh
Priority to US13/358,016 priority patent/US20120199922A1/en
Publication of JP2012160681A publication Critical patent/JP2012160681A/ja
Publication of JP2012160681A5 publication Critical patent/JP2012160681A5/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
JP2011021342A 2011-02-03 2011-02-03 記憶素子、メモリ装置 Ceased JP2012160681A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011021342A JP2012160681A (ja) 2011-02-03 2011-02-03 記憶素子、メモリ装置
CN2012100232156A CN102629489A (zh) 2011-02-03 2012-01-20 存储元件和存储器装置
US13/358,016 US20120199922A1 (en) 2011-02-03 2012-01-25 Storage element and memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011021342A JP2012160681A (ja) 2011-02-03 2011-02-03 記憶素子、メモリ装置

Publications (2)

Publication Number Publication Date
JP2012160681A true JP2012160681A (ja) 2012-08-23
JP2012160681A5 JP2012160681A5 (enExample) 2014-03-13

Family

ID=46587735

Family Applications (1)

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JP2011021342A Ceased JP2012160681A (ja) 2011-02-03 2011-02-03 記憶素子、メモリ装置

Country Status (3)

Country Link
US (1) US20120199922A1 (enExample)
JP (1) JP2012160681A (enExample)
CN (1) CN102629489A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015061056A (ja) * 2013-09-20 2015-03-30 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
JP2015061059A (ja) * 2013-09-20 2015-03-30 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
JP2018521511A (ja) * 2015-07-13 2018-08-02 マイクロン テクノロジー， インク． 磁気トンネル接合
WO2020158323A1 (ja) * 2019-01-30 2020-08-06 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果素子、記憶素子、及び電子機器
CN112753099A (zh) * 2019-03-28 2021-05-04 Tdk株式会社 存储元件、半导体装置、磁记录阵列和存储元件的制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
US8852760B2 (en) * 2012-04-17 2014-10-07 Headway Technologies, Inc. Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
US10263178B2 (en) 2016-09-15 2019-04-16 Toshiba Memory Corporation Magnetic memory device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227388A (ja) * 2007-03-15 2008-09-25 Sony Corp 記憶素子及びメモリ
JP2009081216A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2011258596A (ja) * 2010-06-04 2011-12-22 Hitachi Ltd 磁気抵抗効果素子及び磁気メモリ
JP2012069595A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 磁気抵抗素子及び磁気ランダムアクセスメモリ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4100025B2 (ja) * 2002-04-09 2008-06-11 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
JP5096702B2 (ja) * 2005-07-28 2012-12-12 株式会社日立製作所 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ
JP4187021B2 (ja) * 2005-12-02 2008-11-26 ソニー株式会社 記憶素子及びメモリ
JP2008117930A (ja) * 2006-11-02 2008-05-22 Sony Corp 記憶素子、メモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2011008849A (ja) * 2009-06-24 2011-01-13 Sony Corp メモリ及び書き込み制御方法
US8331141B2 (en) * 2009-08-05 2012-12-11 Alexander Mikhailovich Shukh Multibit cell of magnetic random access memory with perpendicular magnetization
US8259420B2 (en) * 2010-02-01 2012-09-04 Headway Technologies, Inc. TMR device with novel free layer structure
US8470462B2 (en) * 2010-11-30 2013-06-25 Magic Technologies, Inc. Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227388A (ja) * 2007-03-15 2008-09-25 Sony Corp 記憶素子及びメモリ
JP2009081216A (ja) * 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2011258596A (ja) * 2010-06-04 2011-12-22 Hitachi Ltd 磁気抵抗効果素子及び磁気メモリ
JP2012069595A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 磁気抵抗素子及び磁気ランダムアクセスメモリ

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10413198B2 (en) 2013-09-20 2019-09-17 Kabushiki Kaisha Toshiba Strain sensing element, pressure sensor, microphone, blood pressure sensor, and touch panel
JP2015061059A (ja) * 2013-09-20 2015-03-30 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
US9872624B2 (en) 2013-09-20 2018-01-23 Kabushiki Kaisha Toshiba Strain sensing element, pressure sensor, microphone, blood pressure sensor, and touch panel
US9897494B2 (en) 2013-09-20 2018-02-20 Kabushiki Kaisha Toshiba Strain sensing element, pressure sensor, microphone, blood pressure sensor, and touch panel
US10190923B2 (en) 2013-09-20 2019-01-29 Kabushiki Kaisha Toshiba Strain sensing element, pressure sensor, microphone, blood pressure sensor, and touch panel
US10444085B2 (en) 2013-09-20 2019-10-15 Kabushiki Kaisha Toshiba Strain sensing element, pressure sensor, microphone, blood pressure sensor, and touch panel
JP2015061056A (ja) * 2013-09-20 2015-03-30 株式会社東芝 歪検知素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
JP2018521511A (ja) * 2015-07-13 2018-08-02 マイクロン テクノロジー， インク． 磁気トンネル接合
JP7541928B2 (ja) 2019-01-30 2024-08-29 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果素子、記憶素子、及び電子機器
JPWO2020158323A1 (ja) * 2019-01-30 2021-11-25 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果素子、記憶素子、及び電子機器
WO2020158323A1 (ja) * 2019-01-30 2020-08-06 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果素子、記憶素子、及び電子機器
US12089502B2 (en) 2019-01-30 2024-09-10 Sony Semiconductor Solutions Corporation Magnetoresistance effect element, storage element, and electronic device
CN112753099A (zh) * 2019-03-28 2021-05-04 Tdk株式会社 存储元件、半导体装置、磁记录阵列和存储元件的制造方法
CN112753099B (zh) * 2019-03-28 2024-04-16 Tdk株式会社 存储元件、半导体装置、磁记录阵列和存储元件的制造方法

Also Published As

Publication number Publication date
US20120199922A1 (en) 2012-08-09
CN102629489A (zh) 2012-08-08

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