CN102403027B - 存储元件和存储装置 - Google Patents

存储元件和存储装置 Download PDF

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Publication number
CN102403027B
CN102403027B CN201110259029.8A CN201110259029A CN102403027B CN 102403027 B CN102403027 B CN 102403027B CN 201110259029 A CN201110259029 A CN 201110259029A CN 102403027 B CN102403027 B CN 102403027B
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China
Prior art keywords
layer
magnetization
film
memory element
accumulation layer
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Chinese (zh)
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CN102403027A (zh
Inventor
肥后丰
细见政功
大森广之
别所和宏
山根阳
山根一阳
内田裕行
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201110259029.8A 2010-09-09 2011-09-02 存储元件和存储装置 Active CN102403027B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010201526A JP2012059906A (ja) 2010-09-09 2010-09-09 記憶素子、メモリ装置
JP2010-201526 2010-09-09

Publications (2)

Publication Number Publication Date
CN102403027A CN102403027A (zh) 2012-04-04
CN102403027B true CN102403027B (zh) 2016-09-07

Family

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Family Applications (1)

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CN201110259029.8A Active CN102403027B (zh) 2010-09-09 2011-09-02 存储元件和存储装置

Country Status (3)

Country Link
US (3) US9025362B2 (enExample)
JP (1) JP2012059906A (enExample)
CN (1) CN102403027B (enExample)

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JP2012059906A (ja) 2010-09-09 2012-03-22 Sony Corp 記憶素子、メモリ装置
US9647202B2 (en) * 2011-02-16 2017-05-09 Avalanche Technology, Inc. Magnetic random access memory with perpendicular enhancement layer
US9337417B2 (en) * 2010-12-10 2016-05-10 Avalanche Technology, Inc. Magnetic random access memory with perpendicular interfacial anisotropy
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
CN104285291B (zh) * 2012-05-16 2017-06-20 索尼公司 存储设备和存储器件
JP6244617B2 (ja) * 2012-09-28 2017-12-13 ソニー株式会社 記憶素子、記憶装置、磁気ヘッド
JP6182993B2 (ja) 2013-06-17 2017-08-23 ソニー株式会社 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド
US20170200884A1 (en) * 2014-08-05 2017-07-13 Intel Corporation Configurations and techniques to increase interfacial anisotropy of magnetic tunnel junctions
US9385307B2 (en) 2014-10-01 2016-07-05 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
US10672420B2 (en) * 2015-03-05 2020-06-02 Sony Corporation Storage device, storage apparatus, magnetic head, and electronic apparatus
CN107564931A (zh) * 2016-07-06 2018-01-09 中电海康集团有限公司 一种基于共源电阻技术的磁性随机存取存储器及其共源结构制造工艺
US9934798B1 (en) * 2016-09-28 2018-04-03 Seagate Technology Llc Lateral spin valve reader with vertically-integrated two-dimensional semiconducting channel
CN108008326B (zh) * 2016-10-31 2020-11-24 南京大学 一种调控mram材料阻尼因子的方法
WO2019049244A1 (ja) * 2017-09-06 2019-03-14 Tdk株式会社 トンネル磁気抵抗効果素子及び磁気メモリ
US10381403B1 (en) * 2018-06-21 2019-08-13 Globalfoundries Singapore Pte. Ltd. MRAM device with improved seal ring and method for producing the same
US10892299B2 (en) * 2018-07-31 2021-01-12 International Business Machines Corporation Magnetic field controlled transistor
JP2020043134A (ja) 2018-09-06 2020-03-19 キオクシア株式会社 磁気記憶装置
CN114068613B (zh) * 2020-08-05 2025-11-25 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
JP2023042247A (ja) 2021-09-14 2023-03-27 キオクシア株式会社 メモリデバイス
CN115188882A (zh) * 2022-07-08 2022-10-14 中国科学技术大学 一种用于调控金属性铁磁体磁性的器件、制备方法及其应用

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US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
CN101064358A (zh) * 2006-04-28 2007-10-31 株式会社东芝 磁阻元件及其制造方法
CN101154707A (zh) * 2006-09-29 2008-04-02 株式会社东芝 磁阻效应器件以及使用它的磁性随机存取存储器
CN101266831A (zh) * 2007-03-15 2008-09-17 索尼株式会社 存储元件和存储器

Also Published As

Publication number Publication date
US9735343B2 (en) 2017-08-15
US20180006211A1 (en) 2018-01-04
US10374146B2 (en) 2019-08-06
US20120063220A1 (en) 2012-03-15
JP2012059906A (ja) 2012-03-22
US9025362B2 (en) 2015-05-05
CN102403027A (zh) 2012-04-04
US20150145080A1 (en) 2015-05-28

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