JP2015070070A5 - - Google Patents
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- JP2015070070A5 JP2015070070A5 JP2013202123A JP2013202123A JP2015070070A5 JP 2015070070 A5 JP2015070070 A5 JP 2015070070A5 JP 2013202123 A JP2013202123 A JP 2013202123A JP 2013202123 A JP2013202123 A JP 2013202123A JP 2015070070 A5 JP2015070070 A5 JP 2015070070A5
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- JP
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- Prior art keywords
- insulating film
- light receiving
- semiconductor substrate
- film
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (22)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013202123A JP6465545B2 (ja) | 2013-09-27 | 2013-09-27 | 撮像素子およびその製造方法ならびに電子機器 |
| TW103129422A TWI648845B (zh) | 2013-09-27 | 2014-08-26 | 影像拾取元件及其製造方法,以及電子裝置 |
| KR20140121980A KR20150035397A (ko) | 2013-09-27 | 2014-09-15 | 촬상 소자 및 그 제조 방법 및 전자 기기 |
| CN201810330102.8A CN108735767A (zh) | 2013-09-27 | 2014-09-19 | 摄像装置和电子设备 |
| CN201610624836.8A CN106206635B (zh) | 2013-09-27 | 2014-09-19 | 摄像装置和电子设备 |
| CN201810329870.1A CN108717940B (zh) | 2013-09-27 | 2014-09-19 | 摄像装置和电子设备 |
| CN201410481987.3A CN104517981B (zh) | 2013-09-27 | 2014-09-19 | 图像拾取元件、制造图像拾取元件的方法以及电子设备 |
| US14/491,375 US9337226B2 (en) | 2013-09-27 | 2014-09-19 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
| CN201810329761.XA CN108470744B (zh) | 2013-09-27 | 2014-09-19 | 摄像装置和电子设备 |
| CN202010310317.0A CN111564461B (zh) | 2013-09-27 | 2014-09-19 | 摄像装置和电子设备 |
| CN201910948015.3A CN110797359B (zh) | 2013-09-27 | 2014-09-19 | 摄像装置和电子设备 |
| US15/079,834 US9502454B2 (en) | 2013-09-27 | 2016-03-24 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
| US15/299,220 US9893105B2 (en) | 2013-09-27 | 2016-10-20 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
| KR1020170180732A KR102183352B1 (ko) | 2013-09-27 | 2017-12-27 | 촬상 소자 및 그 제조 방법 및 전자 기기 |
| US15/865,057 US10461110B2 (en) | 2013-09-27 | 2018-01-08 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
| US16/567,620 US10950644B2 (en) | 2013-09-27 | 2019-09-11 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
| KR1020200136418A KR102311825B1 (ko) | 2013-09-27 | 2020-10-21 | 촬상 소자 및 그 제조 방법 및 전자 기기 |
| US17/145,488 US11557623B2 (en) | 2013-09-27 | 2021-01-11 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
| KR1020210116015A KR102490635B1 (ko) | 2013-09-27 | 2021-09-01 | 촬상 소자 및 그 제조 방법 및 전자 기기 |
| US17/991,184 US11862652B2 (en) | 2013-09-27 | 2022-11-21 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
| KR1020230002622A KR102664494B1 (ko) | 2013-09-27 | 2023-01-09 | 촬상 소자 및 그 제조 방법 및 전자 기기 |
| US18/235,997 US12166058B2 (en) | 2013-09-27 | 2023-08-21 | Image pickup element, method of manufacturing image pickup element, and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013202123A JP6465545B2 (ja) | 2013-09-27 | 2013-09-27 | 撮像素子およびその製造方法ならびに電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015070070A JP2015070070A (ja) | 2015-04-13 |
| JP2015070070A5 true JP2015070070A5 (enExample) | 2016-04-14 |
| JP6465545B2 JP6465545B2 (ja) | 2019-02-06 |
Family
ID=52739281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013202123A Expired - Fee Related JP6465545B2 (ja) | 2013-09-27 | 2013-09-27 | 撮像素子およびその製造方法ならびに電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (8) | US9337226B2 (enExample) |
| JP (1) | JP6465545B2 (enExample) |
| KR (5) | KR20150035397A (enExample) |
| CN (7) | CN110797359B (enExample) |
| TW (1) | TWI648845B (enExample) |
Families Citing this family (43)
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|---|---|---|---|---|
| JP5374980B2 (ja) * | 2008-09-10 | 2013-12-25 | ソニー株式会社 | 固体撮像装置 |
| JP2012033583A (ja) | 2010-07-29 | 2012-02-16 | Sony Corp | 固体撮像素子及びその製造方法、並びに撮像装置 |
| JP6465545B2 (ja) | 2013-09-27 | 2019-02-06 | ソニー株式会社 | 撮像素子およびその製造方法ならびに電子機器 |
| JP2015216187A (ja) * | 2014-05-09 | 2015-12-03 | ソニー株式会社 | 固体撮像素子および電子機器 |
| US9653507B2 (en) | 2014-06-25 | 2017-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench isolation shrinkage method for enhanced device performance |
| US10008530B2 (en) * | 2015-01-30 | 2018-06-26 | Taiwan Semiconductor Manufacturing Company Ltd. | Image sensing device and manufacturing method thereof |
| US9991303B2 (en) * | 2015-03-16 | 2018-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device structure |
| US9848146B2 (en) * | 2015-04-23 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| KR102435031B1 (ko) * | 2015-08-11 | 2022-08-22 | 삼성전자주식회사 | 고정 전하막을 갖는 이미지 센서 |
| US10727429B2 (en) * | 2015-08-19 | 2020-07-28 | Sony Corporation | Insulating material, electronic device and imaging apparatus |
| US9786704B2 (en) * | 2015-09-10 | 2017-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor structure with crosstalk improvement |
| CN106601758B (zh) * | 2015-10-16 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
| US9847363B2 (en) * | 2015-10-20 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with a radiation sensing region and method for forming the same |
| US10636826B2 (en) * | 2015-10-26 | 2020-04-28 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, manufacturing method thereof, and electronic device |
| US9806117B2 (en) * | 2016-03-15 | 2017-10-31 | Omnivision Technologies, Inc. | Biased deep trench isolation |
| US10163949B2 (en) * | 2016-03-17 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Image device having multi-layered refractive layer on back surface |
| WO2017169231A1 (ja) * | 2016-03-31 | 2017-10-05 | ソニー株式会社 | 撮像素子および電子機器 |
| KR102563588B1 (ko) * | 2016-08-16 | 2023-08-03 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
| KR102589016B1 (ko) | 2016-08-25 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 |
| JP2018037611A (ja) | 2016-09-02 | 2018-03-08 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、受光素子の製造方法、撮像素子および電子機器 |
| KR102666073B1 (ko) | 2016-12-28 | 2024-05-17 | 삼성전자주식회사 | 이미지 센서 |
| KR102549541B1 (ko) * | 2017-01-11 | 2023-06-29 | 삼성전자주식회사 | 이미지 센서 |
| KR102604687B1 (ko) | 2017-02-01 | 2023-11-20 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| JP7079739B2 (ja) | 2017-02-17 | 2022-06-02 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および電子機器 |
| US10777597B2 (en) * | 2017-03-22 | 2020-09-15 | Sony Semiconductor Solutions Corporation | Imaging device |
| US10211244B2 (en) | 2017-06-30 | 2019-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device with reflective structure and method for forming the same |
| KR102511045B1 (ko) * | 2017-11-03 | 2023-03-16 | 엘지디스플레이 주식회사 | 전계발광표시장치 |
| US11652115B2 (en) * | 2017-11-09 | 2023-05-16 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and electronic apparatus |
| CN111226318B (zh) * | 2017-11-09 | 2025-04-18 | 索尼半导体解决方案公司 | 摄像器件和电子设备 |
| JP7116591B2 (ja) | 2018-05-18 | 2022-08-10 | キヤノン株式会社 | 撮像装置及びその製造方法 |
| JP7214373B2 (ja) * | 2018-06-04 | 2023-01-30 | キヤノン株式会社 | 固体撮像素子及び固体撮像素子の製造方法、撮像システム |
| US10658410B2 (en) * | 2018-08-27 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor having improved full well capacity and related method of formation |
| KR20200085439A (ko) | 2019-01-07 | 2020-07-15 | 삼성전자주식회사 | 이미지 센서 |
| JP7680191B2 (ja) * | 2019-07-11 | 2025-05-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| CN110505418A (zh) * | 2019-07-26 | 2019-11-26 | 温州大学 | 一种ccd暗电流实时自动抑制的方法 |
| JP2021048152A (ja) | 2019-09-17 | 2021-03-25 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子および半導体装置 |
| CN113053927A (zh) * | 2019-12-27 | 2021-06-29 | 中芯国际集成电路制造(北京)有限公司 | 一种半导体结构及其形成方法 |
| CN115039225A (zh) * | 2020-02-07 | 2022-09-09 | 华为技术有限公司 | 光传感器设备及其制备方法 |
| JP7500251B2 (ja) * | 2020-04-01 | 2024-06-17 | キヤノン株式会社 | 光電変換装置 |
| JP7612340B2 (ja) | 2020-04-07 | 2025-01-14 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
| KR102880091B1 (ko) * | 2020-09-29 | 2025-11-04 | 삼성전자주식회사 | 이미지 센서 |
| CN112599547B (zh) * | 2020-12-07 | 2023-11-24 | 武汉新芯集成电路制造有限公司 | 一种半导体器件及其制作方法 |
| US12176372B2 (en) * | 2021-03-10 | 2024-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dielectric structure overlying image sensor element to increase quantum efficiency |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6611037B1 (en) * | 2000-08-28 | 2003-08-26 | Micron Technology, Inc. | Multi-trench region for accumulation of photo-generated charge in a CMOS imager |
| KR100682248B1 (ko) * | 2004-07-30 | 2007-02-15 | 매그나칩 반도체 유한회사 | 시모스 이미지센서의 제조방법 |
| US7453109B2 (en) * | 2004-09-03 | 2008-11-18 | Canon Kabushiki Kaisha | Solid-state image sensor and imaging system |
| KR100672695B1 (ko) * | 2004-12-21 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
| JP4704792B2 (ja) * | 2005-04-04 | 2011-06-22 | シャープ株式会社 | 薄膜付きガラス基板、その製造方法およびそれを用いた半導体装置 |
| US7262400B2 (en) * | 2005-12-02 | 2007-08-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device having an active layer overlying a substrate and an isolating region in the active layer |
| US7442974B2 (en) * | 2006-01-31 | 2008-10-28 | Hiok Nam Tay | Image sensor with inter-pixel isolation |
| KR100900682B1 (ko) * | 2007-06-22 | 2009-06-01 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
| JP5151375B2 (ja) * | 2007-10-03 | 2013-02-27 | ソニー株式会社 | 固体撮像装置およびその製造方法および撮像装置 |
| TWI445166B (zh) * | 2008-11-07 | 2014-07-11 | Sony Corp | 固態成像裝置,製造固態成像裝置之方法、及電子設備 |
| JP4730429B2 (ja) * | 2008-12-03 | 2011-07-20 | ソニー株式会社 | 固体撮像装置、および、その製造方法、カメラ |
| JP2010192483A (ja) * | 2009-02-16 | 2010-09-02 | Panasonic Corp | 固体撮像素子及び固体撮像素子の製造方法 |
| JP5172819B2 (ja) * | 2009-12-28 | 2013-03-27 | 株式会社東芝 | 固体撮像装置 |
| JP2011159757A (ja) * | 2010-01-29 | 2011-08-18 | Sony Corp | 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器 |
| US8981510B2 (en) * | 2010-06-04 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ridge structure for back side illuminated image sensor |
| JP5682174B2 (ja) * | 2010-08-09 | 2015-03-11 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに電子機器 |
| JP2012054321A (ja) | 2010-08-31 | 2012-03-15 | Sony Corp | 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置 |
| JP5581954B2 (ja) * | 2010-10-07 | 2014-09-03 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
| FR2969385A1 (fr) * | 2010-12-21 | 2012-06-22 | St Microelectronics Crolles 2 | Capteur d'images a taux d'intermodulation réduit |
| FR2969384A1 (fr) * | 2010-12-21 | 2012-06-22 | St Microelectronics Sa | Capteur d'image a intermodulation reduite |
| JP2012156334A (ja) * | 2011-01-26 | 2012-08-16 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| KR101845257B1 (ko) * | 2011-02-07 | 2018-04-04 | 삼성전자주식회사 | 이미지 센서 |
| JP5284438B2 (ja) * | 2011-02-09 | 2013-09-11 | キヤノン株式会社 | 固体撮像装置、及び固体撮像装置の製造方法 |
| JP2012169530A (ja) * | 2011-02-16 | 2012-09-06 | Sony Corp | 固体撮像装置、および、その製造方法、電子機器 |
| JP5810551B2 (ja) * | 2011-02-25 | 2015-11-11 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP2012191005A (ja) * | 2011-03-10 | 2012-10-04 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法および撮像装置 |
| JP2013004685A (ja) * | 2011-06-15 | 2013-01-07 | Canon Inc | 固体撮像装置の製造方法 |
| US20140306311A1 (en) | 2011-12-01 | 2014-10-16 | Sharp Kabushiki Kaisha | Solid-state imaging element |
| JP6003316B2 (ja) * | 2012-07-12 | 2016-10-05 | ソニー株式会社 | 固体撮像装置、電子機器 |
| TW201405792A (zh) * | 2012-07-30 | 2014-02-01 | Sony Corp | 固體攝像裝置、固體攝像裝置之製造方法及電子機器 |
| US20140048897A1 (en) * | 2012-08-16 | 2014-02-20 | Omnivision Technologies, Inc. | Pixel with negatively-charged shallow trench isolation (sti) liner |
| JP6161007B2 (ja) * | 2012-09-14 | 2017-07-12 | パナソニックIpマネジメント株式会社 | 固体撮像装置及びカメラモジュール |
| JP2014086538A (ja) * | 2012-10-23 | 2014-05-12 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
| US9184198B1 (en) * | 2013-02-20 | 2015-11-10 | Google Inc. | Stacked image sensor with cascaded optical edge pass filters |
| JP2015041677A (ja) * | 2013-08-21 | 2015-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| FR3009890B1 (fr) * | 2013-08-23 | 2016-12-23 | Commissariat Energie Atomique | Photodiode bsi a haut rendement quantique |
| JP6465545B2 (ja) | 2013-09-27 | 2019-02-06 | ソニー株式会社 | 撮像素子およびその製造方法ならびに電子機器 |
| US9406710B2 (en) * | 2013-11-11 | 2016-08-02 | United Microelectronics Corp. | Semiconductor device and manufacturing method of the same |
| JP2015106621A (ja) * | 2013-11-29 | 2015-06-08 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| CN108701697B (zh) * | 2016-03-30 | 2022-12-16 | 索尼公司 | 固态图像传感器、固态图像传感器的制造方法以及电子设备 |
| EP3477710B1 (en) * | 2017-10-26 | 2023-03-29 | STMicroelectronics (Research & Development) Limited | Avalanche photodiode and method of manufacturing the avalanche photodiode |
| US10672934B2 (en) * | 2017-10-31 | 2020-06-02 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
| US10510797B2 (en) * | 2017-10-31 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor image sensor |
-
2013
- 2013-09-27 JP JP2013202123A patent/JP6465545B2/ja not_active Expired - Fee Related
-
2014
- 2014-08-26 TW TW103129422A patent/TWI648845B/zh active
- 2014-09-15 KR KR20140121980A patent/KR20150035397A/ko not_active Ceased
- 2014-09-19 CN CN201910948015.3A patent/CN110797359B/zh active Active
- 2014-09-19 US US14/491,375 patent/US9337226B2/en active Active
- 2014-09-19 CN CN201810330102.8A patent/CN108735767A/zh active Pending
- 2014-09-19 CN CN201810329761.XA patent/CN108470744B/zh active Active
- 2014-09-19 CN CN201810329870.1A patent/CN108717940B/zh active Active
- 2014-09-19 CN CN201610624836.8A patent/CN106206635B/zh not_active Expired - Fee Related
- 2014-09-19 CN CN202010310317.0A patent/CN111564461B/zh active Active
- 2014-09-19 CN CN201410481987.3A patent/CN104517981B/zh not_active Expired - Fee Related
-
2016
- 2016-03-24 US US15/079,834 patent/US9502454B2/en active Active
- 2016-10-20 US US15/299,220 patent/US9893105B2/en active Active
-
2017
- 2017-12-27 KR KR1020170180732A patent/KR102183352B1/ko not_active Expired - Fee Related
-
2018
- 2018-01-08 US US15/865,057 patent/US10461110B2/en active Active
-
2019
- 2019-09-11 US US16/567,620 patent/US10950644B2/en active Active
-
2020
- 2020-10-21 KR KR1020200136418A patent/KR102311825B1/ko not_active Expired - Fee Related
-
2021
- 2021-01-11 US US17/145,488 patent/US11557623B2/en active Active
- 2021-09-01 KR KR1020210116015A patent/KR102490635B1/ko active Active
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2022
- 2022-11-21 US US17/991,184 patent/US11862652B2/en active Active
-
2023
- 2023-01-09 KR KR1020230002622A patent/KR102664494B1/ko active Active
- 2023-08-21 US US18/235,997 patent/US12166058B2/en active Active
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