JP2013004685A - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
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- JP2013004685A JP2013004685A JP2011133539A JP2011133539A JP2013004685A JP 2013004685 A JP2013004685 A JP 2013004685A JP 2011133539 A JP2011133539 A JP 2011133539A JP 2011133539 A JP2011133539 A JP 2011133539A JP 2013004685 A JP2013004685 A JP 2013004685A
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- imaging device
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- state imaging
- insulating film
- manufacturing
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- 238000003384 imaging method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 230000005855 radiation Effects 0.000 claims abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 48
- 239000002184 metal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000011241 protective layer Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 11
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910007991 Si-N Chemical group 0.000 description 1
- 229910006294 Si—N Chemical group 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
Abstract
【解決手段】光導波路の材料を堆積させる工程と、堆積された前記材料に光または放射線を照射することによって前記材料をアニールするアニール工程により、前記堆積工程および前記アニール工程を経て前記光電変換部に光を導く光導波路を形成する。
【選択図】図1
Description
Claims (7)
- 光電変換部が設けられ、前記光電変換部の上の領域に開口を有する絶縁膜が形成された半導体基板を準備する工程と、
前記開口の中に前記絶縁膜よりも高い屈折率の材料を堆積させる堆積工程と、
前記開口に堆積された前記材料に光または放射線を照射することによって前記材料をアニールするアニール工程と、を含み、
前記堆積工程および前記アニール工程を経て、前記光電変換部に光を導く光導波路が形成される、
ことを特徴とする固体撮像装置の製造方法。 - 前記堆積工程と前記アニール工程を複数回にわたって実施することにより前記光導波路を形成する、
ことを特徴とする請求項1に記載の固体撮像装置の製造方法。 - 前記アニール工程は、前記材料の温度が100℃以上400℃以下の範囲内の温度になるように実施される、
ことを特徴とする請求項1に記載の固体撮像装置の製造方法。 - 前記アニール工程は、前記材料の表面の照度が10mW/cm2以上1000mW/cm2以下の範囲内の照度になるよう実施される、
ことを特徴とする請求項1に記載の固体撮像装置の製造方法。 - 前記光は紫外光を含む、
ことを特徴とする請求項1乃至請求項3のいずれか1項に記載の固体撮像装置の製造方法。 - 前記放射線は電子線を含む、
ことを特徴とする請求項1乃至請求項3のいずれか1項に記載の固体撮像装置の製造方法。 - 前記材料は窒化シリコンおよび酸窒化シリコンの少なくとも一つを含む、
ことを特徴とする請求項1乃至請求項5のいずれか1項に記載の固体撮像装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011133539A JP2013004685A (ja) | 2011-06-15 | 2011-06-15 | 固体撮像装置の製造方法 |
US13/477,665 US8809094B2 (en) | 2011-06-15 | 2012-05-22 | Method of manufacturing solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011133539A JP2013004685A (ja) | 2011-06-15 | 2011-06-15 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013004685A true JP2013004685A (ja) | 2013-01-07 |
JP2013004685A5 JP2013004685A5 (ja) | 2014-07-31 |
Family
ID=47353974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011133539A Pending JP2013004685A (ja) | 2011-06-15 | 2011-06-15 | 固体撮像装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8809094B2 (ja) |
JP (1) | JP2013004685A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015005578A (ja) * | 2013-06-19 | 2015-01-08 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
JP2016039192A (ja) * | 2014-08-06 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6465545B2 (ja) * | 2013-09-27 | 2019-02-06 | ソニー株式会社 | 撮像素子およびその製造方法ならびに電子機器 |
CN111712921A (zh) * | 2017-12-12 | 2020-09-25 | 拉芳德利责任有限公司 | 用于可见光和紫外光检测的半导体光学传感器及其对应的制造过程 |
CN114400235A (zh) * | 2022-01-16 | 2022-04-26 | Nano科技(北京)有限公司 | 一种背照射光探测阵列结构及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08203894A (ja) * | 1995-01-30 | 1996-08-09 | Sony Corp | 半導体装置の製造方法 |
JP2005340498A (ja) * | 2004-05-27 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
JP2006049825A (ja) * | 2004-07-08 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
JP2006191000A (ja) * | 2004-12-08 | 2006-07-20 | Canon Inc | 光電変換装置 |
JP2006261247A (ja) * | 2005-03-15 | 2006-09-28 | Canon Inc | 固体撮像素子およびその製造方法 |
JP2007200961A (ja) * | 2006-01-24 | 2007-08-09 | Sharp Corp | 半導体装置およびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05235313A (ja) | 1992-02-25 | 1993-09-10 | Sony Corp | 受光素子 |
JP4427949B2 (ja) | 2002-12-13 | 2010-03-10 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
KR20050085579A (ko) * | 2002-12-13 | 2005-08-29 | 소니 가부시끼 가이샤 | 고체 촬상 소자 및 그 제조방법 |
JP2004221487A (ja) * | 2003-01-17 | 2004-08-05 | Sharp Corp | 半導体装置の製造方法及び半導体装置 |
JP2007305690A (ja) | 2006-05-09 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 固体撮像装置用素子及びその製造方法 |
JP2008091771A (ja) | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
-
2011
- 2011-06-15 JP JP2011133539A patent/JP2013004685A/ja active Pending
-
2012
- 2012-05-22 US US13/477,665 patent/US8809094B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08203894A (ja) * | 1995-01-30 | 1996-08-09 | Sony Corp | 半導体装置の製造方法 |
JP2005340498A (ja) * | 2004-05-27 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 固体撮像素子 |
JP2006049825A (ja) * | 2004-07-08 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
JP2006191000A (ja) * | 2004-12-08 | 2006-07-20 | Canon Inc | 光電変換装置 |
JP2006261247A (ja) * | 2005-03-15 | 2006-09-28 | Canon Inc | 固体撮像素子およびその製造方法 |
JP2007200961A (ja) * | 2006-01-24 | 2007-08-09 | Sharp Corp | 半導体装置およびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015005578A (ja) * | 2013-06-19 | 2015-01-08 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
US9601533B2 (en) | 2013-06-19 | 2017-03-21 | Canon Kabushiki Kaisha | Solid-state imaging apparatus, method of manufacturing the same, and camera |
JP2016039192A (ja) * | 2014-08-06 | 2016-03-22 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
Also Published As
Publication number | Publication date |
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US20120322196A1 (en) | 2012-12-20 |
US8809094B2 (en) | 2014-08-19 |
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