JP5284438B2 - 固体撮像装置、及び固体撮像装置の製造方法 - Google Patents
固体撮像装置、及び固体撮像装置の製造方法 Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 49
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- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
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- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
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- Solid State Image Pick-Up Elements (AREA)
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Description
図14を用いて撮像システムの構成を説明する。図14は固体撮像装置及び撮像システムのブロック図である。撮像システム1600は、固体撮像装置1601と、固体撮像装置1601から出力された電気信号が入力され、当該電気信号を処理する信号処理装置1602とを備える。具体的には、電気信号が固体撮像装置1601のOUT1、2から出力され、信号処理装置1602のINに入力される。信号処理装置1602のOUT3からは、電気信号を処理した結果に応じて、画像信号や駆動信号、制御信号が出力される。電気信号としては、電流信号であってもよいし電圧信号でもよく、また、アナログ信号であってもよいしデジタル信号であってもよい。固体撮像装置1601は、イメージセンサー、焦点検出用のセンサー、光量検出用のセンサーなどに用いることが可能である。そして、信号処理装置1602は入力された電気信号を処理し、画像信号、レンズ駆動のための駆動信号、露光時間を調整するための制御信号にして出力する。このような撮像システムを有することで、好適な画像信号、あるいは制御に利用可能な制御信号が得られる。
206 ゲート電極
324a 高屈折率部材
601 第1の部材
603 第2の部材
3191 複数の絶縁膜
Claims (11)
- 光電変換部を有する基板と、
前記基板の上部に配され、開口を有する複数の絶縁膜、及び前記基板の上に設けられ前記開口の中に位置し、前記光電変換部に対応して配された窒化シリコンかならなる部材とを有する導波路と、を有する固体撮像装置の製造方法において、
上部電極と下部電極とを有する高密度プラズマCVD装置を用いて、前記開口内に窒化シリコンからなる膜を形成する第1の工程、及び第2の工程を有し、
前記第2の工程は、前記第1の工程の後に、前記上部電極の高周波パワーに対する前記下部電極の高周波パワーの比率が前記第1の工程に比べて高い条件で、前記窒化シリコンからなる膜を形成することを特徴とする固体撮像装置の製造方法。 - 前記第1の工程及び前記第2の工程において、シリコン含有ガスと、窒素と、窒素含有ガスと、不活性ガスとを含む混合ガスが供給されることを特徴とする請求項1に記載の固体撮像装置の製造方法。
- 前記第1の工程で形成される膜の厚みは10nm以上50nm以下であることを特徴とする請求項1あるいは2のいずれか1項に記載の固体撮像装置の製造方法。
- 前記窒化シリコンからなる膜を形成する工程は、
前記第1の工程と前記第2の工程との間に、前記上部電極の高周波パワーに対する前記下部電極の高周波パワーの割合が、前記第1の工程の値と前記第2の工程の値の間である条件で、前記開口内に前記窒化シリコンからなる膜を形成する第3の工程を有することを特徴とする請求項1乃至3のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第2の工程の後に、前記窒化シリコンからなる膜の一部をエッチングにて除去する工程を有する請求項1乃至4のいずれか1項に記載の固体撮像装置の製造方法。
- 前記第2の工程で形成される前記窒化シリコンからなる膜は、Si−H結合とN−H結合を有する窒化シリコンからなり、
前記窒化シリコンのSi−H結合とN−H結合は、1.0≦N−H結合/Si−H結合≦10を満たすことを特徴とする請求項1乃至5のいずれか1項に記載の固体撮像装置の製造方法。 - 前記第2の工程において、前記膜は、前記基板の主面に平行な方向における前記開口の側面から前記開口中心への前記基板の主面に平行な方向への成膜速度に対して、前記基板の主面に垂直な方向における前記開口の底面から上方向への成膜速度が1.5倍以上10倍以下となる条件で形成されることを特徴とする請求項1乃至6のいずれか1項に記載の固体撮像装置の製造方法。
- 前記開口は、幅L1の底面と、前記底面からの高さHの幅L2の上面と、前記基板の主面から角度αの傾きを有する側面とを有し、L1<L2、H/L2<2、且つ72.8°<α<90°を満たすことを特徴とする請求項1乃至7のいずれか1項に記載の固体撮像装置の製造方法。
- 前記第2の工程において、
不活性ガスとして少なくともヘリウムを含み、
前記高密度プラズマCVD装置のチャンバーにおける圧力が3mTorr以上10mTorr以下であることを特徴とする請求項2に記載の固体撮像装置の製造方法。 - 光電変換部を有する基板と、
前記基板の上に配され、開口を有する複数の絶縁膜、及び前記基板の上に配され、前記光電変換部に対応して前記開口に配された窒化シリコンからなる部材とを有する導波路と、を有する固体撮像装置の製造方法において、
前記開口に前記部材となる窒化シリコンからなる膜を形成する第1の工程、及び第2の工程を有し、
前記第1の工程は、平行平板プラズマCVD装置を用いて、前記窒化シリコンからなる膜を形成し、
前記第2の工程は、上部電極と下部電極を有する高密度プラズマCVD装置を用いて前記上部電極の高周波パワーに対する前記下部電極の高周波パワーの比率が前記第1の工程に比べて高い条件で、前記窒化シリコンからなる膜を形成することを特徴とする固体撮像装置の製造方法。 - 光電変換部を有する基板と、
前記基板の上部に配され、開口を有する複数の絶縁膜、及び前記基板の上に設けられ前記開口の中に位置し、前記光電変換部に対応して配された窒化シリコンかならなる部材とを有する導波路と、を有する固体撮像装置の製造方法において、
高密度プラズマCVD装置を用いて、前記開口内に窒化シリコンからなる膜を形成する第1の工程、及び第2の工程を有し、
前記第2の工程は、前記第1の工程の後に、前記第1の工程に比べて成膜効果に対するスパッタ効果の割合が高い条件で、前記窒化シリコンからなる膜を形成することを特徴とする固体撮像装置の製造方法。
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JP2011223302A JP5284438B2 (ja) | 2011-02-09 | 2011-10-07 | 固体撮像装置、及び固体撮像装置の製造方法 |
EP12151095.2A EP2487715B1 (en) | 2011-02-09 | 2012-01-13 | Solid-state image pickup device and method for manufacturing solid-state image pickup device |
KR1020120010273A KR101476497B1 (ko) | 2011-02-09 | 2012-02-01 | 고체 촬상 장치 및 고체 촬상 장치의 제조 방법 |
US13/365,055 US9224777B2 (en) | 2011-02-09 | 2012-02-02 | Solid-state image pickup device and method for manufacturing solid-state image pickup device |
CN201210024736.3A CN102637703B (zh) | 2011-02-09 | 2012-02-06 | 固态图像拾取设备和用于制造固态图像拾取设备的方法 |
BRBR102012002818-2A BR102012002818A2 (pt) | 2011-02-09 | 2012-02-07 | mÉtodo para fabricar um dispositivo de captura de imagem de estado sàlido, e, dispositivo de captura de imagem de estado sàlido |
RU2012104496/28A RU2497233C2 (ru) | 2011-02-09 | 2012-02-08 | Твердотельное устройство захвата изображений и способ для изготовления твердотельного устройства захвата изображений |
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JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
US20120267741A1 (en) * | 2011-04-21 | 2012-10-25 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
US20140187045A1 (en) * | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
JP6136663B2 (ja) * | 2013-07-04 | 2017-05-31 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
JP6465545B2 (ja) | 2013-09-27 | 2019-02-06 | ソニー株式会社 | 撮像素子およびその製造方法ならびに電子機器 |
TWI571626B (zh) | 2015-07-15 | 2017-02-21 | 力晶科技股份有限公司 | 具有奈米腔的集成生物感測器及其製作方法 |
JP2017069553A (ja) | 2015-09-30 | 2017-04-06 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
US10375338B2 (en) * | 2017-02-01 | 2019-08-06 | Omnivision Technologies, Inc. | Two stage amplifier readout circuit in pixel level hybrid bond image sensors |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0745601A (ja) * | 1993-07-27 | 1995-02-14 | Fuji Electric Co Ltd | プラズマcvd成膜方法およびその装置 |
JPH0992813A (ja) * | 1995-09-27 | 1997-04-04 | Sony Corp | 固体撮像素子とその製造方法 |
JP2001176866A (ja) * | 1999-10-28 | 2001-06-29 | Texas Instr Inc <Ti> | 集積回路の製造方法 |
US20030110808A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials Inc., A Delaware Corporation | Method of manufacturing an optical core |
JP4427949B2 (ja) * | 2002-12-13 | 2010-03-10 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP2005251804A (ja) * | 2004-03-01 | 2005-09-15 | Canon Inc | 撮像素子 |
JP2006120845A (ja) * | 2004-10-21 | 2006-05-11 | Canon Inc | 光電変換装置およびその製造方法 |
US7592645B2 (en) * | 2004-12-08 | 2009-09-22 | Canon Kabushiki Kaisha | Photoelectric conversion device and method for producing photoelectric conversion device |
JP2007201162A (ja) * | 2006-01-26 | 2007-08-09 | Fujifilm Corp | 固体撮像素子の製造方法および固体撮像素子 |
US7524690B2 (en) * | 2006-08-10 | 2009-04-28 | United Microelectronics Corp. | Image sensor with a waveguide tube and a related fabrication method |
US7973271B2 (en) * | 2006-12-08 | 2011-07-05 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
KR20080111624A (ko) * | 2007-06-19 | 2008-12-24 | 삼성전자주식회사 | 플라즈마 식각장치 및 이를 이용한 챔버 세정방법 |
JP4852016B2 (ja) | 2007-10-29 | 2012-01-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
US7704897B2 (en) * | 2008-02-22 | 2010-04-27 | Applied Materials, Inc. | HDP-CVD SiON films for gap-fill |
JP5402083B2 (ja) | 2008-09-29 | 2014-01-29 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
KR20100037208A (ko) | 2008-10-01 | 2010-04-09 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
KR101561862B1 (ko) * | 2008-12-26 | 2015-10-21 | 삼성전자 주식회사 | 반도체 집적 회로 장치의 제조 방법 |
JP5644057B2 (ja) * | 2009-03-12 | 2014-12-24 | ソニー株式会社 | 固体撮像装置とその製造方法および撮像装置 |
JP5434252B2 (ja) * | 2009-05-14 | 2014-03-05 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
JP2010283145A (ja) | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
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US20120202310A1 (en) | 2012-08-09 |
KR20120092021A (ko) | 2012-08-20 |
RU2012104496A (ru) | 2013-08-20 |
CN102637703A (zh) | 2012-08-15 |
BR102012002818A2 (pt) | 2013-07-23 |
RU2497233C2 (ru) | 2013-10-27 |
EP2487715A3 (en) | 2013-02-27 |
US9224777B2 (en) | 2015-12-29 |
JP2012182431A (ja) | 2012-09-20 |
EP2487715B1 (en) | 2015-03-25 |
KR101476497B1 (ko) | 2014-12-24 |
EP2487715A2 (en) | 2012-08-15 |
CN102637703B (zh) | 2016-03-16 |
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