|
US9793126B2
(en)
|
2010-08-04 |
2017-10-17 |
Lam Research Corporation |
Ion to neutral control for wafer processing with dual plasma source reactor
|
|
US9039911B2
(en)
|
2012-08-27 |
2015-05-26 |
Lam Research Corporation |
Plasma-enhanced etching in an augmented plasma processing system
|
|
US9112003B2
(en)
|
2011-12-09 |
2015-08-18 |
Asm International N.V. |
Selective formation of metallic films on metallic surfaces
|
|
JP2014212310A
(ja)
*
|
2013-04-02 |
2014-11-13 |
東京エレクトロン株式会社 |
半導体デバイスの製造方法及び製造装置
|
|
US9230819B2
(en)
|
2013-04-05 |
2016-01-05 |
Lam Research Corporation |
Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
|
|
US9245761B2
(en)
|
2013-04-05 |
2016-01-26 |
Lam Research Corporation |
Internal plasma grid for semiconductor fabrication
|
|
CA2938783A1
(en)
*
|
2013-04-18 |
2014-10-23 |
Ripon Kumar DEY |
Method of fabricating nano-scale structures and nano-scale structures fabricated using the method
|
|
US9017526B2
(en)
|
2013-07-08 |
2015-04-28 |
Lam Research Corporation |
Ion beam etching system
|
|
US9147581B2
(en)
|
2013-07-11 |
2015-09-29 |
Lam Research Corporation |
Dual chamber plasma etcher with ion accelerator
|
|
TWI739285B
(zh)
|
2014-02-04 |
2021-09-11 |
荷蘭商Asm Ip控股公司 |
金屬、金屬氧化物與介電質的選擇性沉積
|
|
US10047435B2
(en)
|
2014-04-16 |
2018-08-14 |
Asm Ip Holding B.V. |
Dual selective deposition
|
|
US9773683B2
(en)
|
2014-06-09 |
2017-09-26 |
American Air Liquide, Inc. |
Atomic layer or cyclic plasma etching chemistries and processes
|
|
US9396965B2
(en)
*
|
2014-08-05 |
2016-07-19 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques and apparatus for anisotropic metal etching
|
|
US9460961B2
(en)
|
2014-08-05 |
2016-10-04 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques and apparatus for anisotropic metal etching
|
|
US9837254B2
(en)
|
2014-08-12 |
2017-12-05 |
Lam Research Corporation |
Differentially pumped reactive gas injector
|
|
US10825652B2
(en)
|
2014-08-29 |
2020-11-03 |
Lam Research Corporation |
Ion beam etch without need for wafer tilt or rotation
|
|
US9406535B2
(en)
|
2014-08-29 |
2016-08-02 |
Lam Research Corporation |
Ion injector and lens system for ion beam milling
|
|
US9536748B2
(en)
|
2014-10-21 |
2017-01-03 |
Lam Research Corporation |
Use of ion beam etching to generate gate-all-around structure
|
|
US9570509B2
(en)
*
|
2015-01-29 |
2017-02-14 |
Qualcomm Incorporated |
Magnetic tunnel junction (MTJ) device array
|
|
US9490145B2
(en)
|
2015-02-23 |
2016-11-08 |
Asm Ip Holding B.V. |
Removal of surface passivation
|
|
US9478399B2
(en)
*
|
2015-03-27 |
2016-10-25 |
Varian Semiconductor Equipment Associates, Inc. |
Multi-aperture extraction system for angled ion beam
|
|
WO2016190036A1
(ja)
*
|
2015-05-22 |
2016-12-01 |
株式会社 日立ハイテクノロジーズ |
プラズマ処理装置およびそれを用いたプラズマ処理方法
|
|
US20160365227A1
(en)
|
2015-06-09 |
2016-12-15 |
Kabushiki Kaisha Toshiba |
Semiconductor manufacturing apparatus
|
|
CN104878392B
(zh)
*
|
2015-06-24 |
2017-05-31 |
安徽纯源镀膜科技有限公司 |
离子束清洗刻蚀设备
|
|
US10280512B2
(en)
*
|
2015-07-27 |
2019-05-07 |
Varian Semiconductor Equipment Associates, Inc. |
Apparatus and method for carbon film deposition profile control
|
|
US10428421B2
(en)
|
2015-08-03 |
2019-10-01 |
Asm Ip Holding B.V. |
Selective deposition on metal or metallic surfaces relative to dielectric surfaces
|
|
US10566185B2
(en)
|
2015-08-05 |
2020-02-18 |
Asm Ip Holding B.V. |
Selective deposition of aluminum and nitrogen containing material
|
|
US10121699B2
(en)
|
2015-08-05 |
2018-11-06 |
Asm Ip Holding B.V. |
Selective deposition of aluminum and nitrogen containing material
|
|
US9706634B2
(en)
*
|
2015-08-07 |
2017-07-11 |
Varian Semiconductor Equipment Associates, Inc |
Apparatus and techniques to treat substrates using directional plasma and reactive gas
|
|
US10062548B2
(en)
*
|
2015-08-31 |
2018-08-28 |
Varian Semiconductor Equipment Associates, Inc. |
Gas injection system for ion beam device
|
|
CN107924993B
(zh)
*
|
2015-09-18 |
2022-03-18 |
英特尔公司 |
自旋转移矩存储器(sttm)、使用易失性化合物形成元素来形成其的方法以及包括其的设备
|
|
KR101900334B1
(ko)
*
|
2015-10-02 |
2018-09-20 |
캐논 아네르바 가부시키가이샤 |
이온 빔 에칭 방법 및 이온 빔 에칭 장치
|
|
US10695794B2
(en)
|
2015-10-09 |
2020-06-30 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
|
US10814349B2
(en)
|
2015-10-09 |
2020-10-27 |
Asm Ip Holding B.V. |
Vapor phase deposition of organic films
|
|
US9812349B2
(en)
|
2015-12-01 |
2017-11-07 |
Lam Research Corporation |
Control of the incidence angle of an ion beam on a substrate
|
|
US9997351B2
(en)
*
|
2015-12-08 |
2018-06-12 |
Varian Semiconductor Equipment Associates, Inc. |
Apparatus and techniques for filling a cavity using angled ion beam
|
|
US9589850B1
(en)
*
|
2015-12-10 |
2017-03-07 |
Globalfoundries Inc. |
Method for controlled recessing of materials in cavities in IC devices
|
|
JP6888007B2
(ja)
|
2016-01-26 |
2021-06-16 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
ウェハエッジリングの持ち上げに関する解決
|
|
KR102689380B1
(ko)
|
2016-01-26 |
2024-07-26 |
어플라이드 머티어리얼스, 인코포레이티드 |
웨이퍼 에지 링 리프팅 솔루션
|
|
US9779955B2
(en)
*
|
2016-02-25 |
2017-10-03 |
Lam Research Corporation |
Ion beam etching utilizing cryogenic wafer temperatures
|
|
US11081342B2
(en)
|
2016-05-05 |
2021-08-03 |
Asm Ip Holding B.V. |
Selective deposition using hydrophobic precursors
|
|
GB201608926D0
(en)
*
|
2016-05-20 |
2016-07-06 |
Spts Technologies Ltd |
Method for plasma etching a workpiece
|
|
US10373820B2
(en)
|
2016-06-01 |
2019-08-06 |
Asm Ip Holding B.V. |
Deposition of organic films
|
|
US10453701B2
(en)
|
2016-06-01 |
2019-10-22 |
Asm Ip Holding B.V. |
Deposition of organic films
|
|
US10014212B2
(en)
*
|
2016-06-08 |
2018-07-03 |
Asm Ip Holding B.V. |
Selective deposition of metallic films
|
|
US9803277B1
(en)
*
|
2016-06-08 |
2017-10-31 |
Asm Ip Holding B.V. |
Reaction chamber passivation and selective deposition of metallic films
|
|
US10163642B2
(en)
*
|
2016-06-30 |
2018-12-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor device, method and tool of manufacture
|
|
WO2018039315A1
(en)
*
|
2016-08-26 |
2018-03-01 |
Applied Materials, Inc. |
Plasma screen for plasma processing chamber
|
|
US10141161B2
(en)
|
2016-09-12 |
2018-11-27 |
Varian Semiconductor Equipment Associates, Inc. |
Angle control for radicals and reactive neutral ion beams
|
|
US10032661B2
(en)
|
2016-11-18 |
2018-07-24 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor device, method, and tool of manufacture
|
|
US20180143332A1
(en)
*
|
2016-11-18 |
2018-05-24 |
Plasma-Therm Llc |
Ion Filter
|
|
US11430656B2
(en)
|
2016-11-29 |
2022-08-30 |
Asm Ip Holding B.V. |
Deposition of oxide thin films
|
|
US9947517B1
(en)
|
2016-12-16 |
2018-04-17 |
Applied Materials, Inc. |
Adjustable extended electrode for edge uniformity control
|
|
US11694911B2
(en)
|
2016-12-20 |
2023-07-04 |
Lam Research Corporation |
Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
|
|
KR20180081291A
(ko)
|
2017-01-06 |
2018-07-16 |
삼성전자주식회사 |
이온 빔을 이용한 기판 처리 방법 및 이를 수행하기 위한 장치
|
|
KR102768880B1
(ko)
|
2017-01-11 |
2025-02-19 |
삼성전자주식회사 |
반도체 소자의 패턴 형성 방법
|
|
CN207396531U
(zh)
|
2017-01-31 |
2018-05-22 |
杭州探真纳米科技有限公司 |
一种悬臂末端纳米探针
|
|
US10553404B2
(en)
|
2017-02-01 |
2020-02-04 |
Applied Materials, Inc. |
Adjustable extended electrode for edge uniformity control
|
|
US11094535B2
(en)
|
2017-02-14 |
2021-08-17 |
Asm Ip Holding B.V. |
Selective passivation and selective deposition
|
|
US11501965B2
(en)
|
2017-05-05 |
2022-11-15 |
Asm Ip Holding B.V. |
Plasma enhanced deposition processes for controlled formation of metal oxide thin films
|
|
CN110651064B
(zh)
|
2017-05-16 |
2022-08-16 |
Asm Ip 控股有限公司 |
电介质上氧化物的选择性peald
|
|
TWI729285B
(zh)
*
|
2017-06-14 |
2021-06-01 |
荷蘭商Asm Ip控股公司 |
金屬薄膜的選擇性沈積
|
|
US10193066B2
(en)
*
|
2017-06-30 |
2019-01-29 |
Varian Semiconductor Equipment Associates, Inc. |
Apparatus and techniques for anisotropic substrate etching
|
|
CN109216540A
(zh)
*
|
2017-06-30 |
2019-01-15 |
中电海康集团有限公司 |
Mtj器件与其制作方法
|
|
US10900120B2
(en)
|
2017-07-14 |
2021-01-26 |
Asm Ip Holding B.V. |
Passivation against vapor deposition
|
|
US10851457B2
(en)
|
2017-08-31 |
2020-12-01 |
Lam Research Corporation |
PECVD deposition system for deposition on selective side of the substrate
|
|
US11075105B2
(en)
|
2017-09-21 |
2021-07-27 |
Applied Materials, Inc. |
In-situ apparatus for semiconductor process module
|
|
US10354887B2
(en)
*
|
2017-09-27 |
2019-07-16 |
Lam Research Corporation |
Atomic layer etching of metal oxide
|
|
KR102273971B1
(ko)
|
2017-10-20 |
2021-07-07 |
주식회사 엘지화학 |
파라데이 상자를 이용한 플라즈마 식각 방법
|
|
JP7012347B2
(ja)
*
|
2017-11-01 |
2022-02-14 |
国立研究開発法人産業技術総合研究所 |
二次元層状材料の積層体
|
|
US10276340B1
(en)
*
|
2017-12-20 |
2019-04-30 |
Varian Semiconductor Equipment Associates, Inc. |
Low particle capacitively coupled components for workpiece processing
|
|
US11043400B2
(en)
|
2017-12-21 |
2021-06-22 |
Applied Materials, Inc. |
Movable and removable process kit
|
|
US10766057B2
(en)
*
|
2017-12-28 |
2020-09-08 |
Micron Technology, Inc. |
Components and systems for cleaning a tool for forming a semiconductor device, and related methods
|
|
JP7146690B2
(ja)
|
2018-05-02 |
2022-10-04 |
エーエスエム アイピー ホールディング ビー.ブイ. |
堆積および除去を使用した選択的層形成
|
|
US10790123B2
(en)
|
2018-05-28 |
2020-09-29 |
Applied Materials, Inc. |
Process kit with adjustable tuning ring for edge uniformity control
|
|
US11935773B2
(en)
|
2018-06-14 |
2024-03-19 |
Applied Materials, Inc. |
Calibration jig and calibration method
|
|
KR102273084B1
(ko)
|
2018-06-29 |
2021-07-06 |
주식회사 엘지화학 |
파라데이 상자를 이용한 플라즈마 식각 방법
|
|
US10535522B1
(en)
|
2018-08-21 |
2020-01-14 |
Varian Semiconductor Equipment Associates, Inc. |
Angular control of ion beam for vertical surface treatment
|
|
US12482648B2
(en)
|
2018-10-02 |
2025-11-25 |
Asm Ip Holding B.V. |
Selective passivation and selective deposition
|
|
JP2020056104A
(ja)
|
2018-10-02 |
2020-04-09 |
エーエスエム アイピー ホールディング ビー.ブイ. |
選択的パッシベーションおよび選択的堆積
|
|
US11289310B2
(en)
|
2018-11-21 |
2022-03-29 |
Applied Materials, Inc. |
Circuits for edge ring control in shaped DC pulsed plasma process device
|
|
US11195703B2
(en)
|
2018-12-07 |
2021-12-07 |
Applied Materials, Inc. |
Apparatus and techniques for angled etching using multielectrode extraction source
|
|
EP3899617B1
(en)
*
|
2018-12-17 |
2024-04-10 |
Applied Materials, Inc. |
Methods of optical device fabrication using an electron beam apparatus
|
|
US11715621B2
(en)
*
|
2018-12-17 |
2023-08-01 |
Applied Materials, Inc. |
Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
|
|
US10770338B2
(en)
*
|
2018-12-19 |
2020-09-08 |
Globalfoundries Inc. |
System comprising a single wafer, reduced volume process chamber
|
|
CN109786194B
(zh)
*
|
2018-12-20 |
2020-10-30 |
丰豹智能科技(上海)有限公司 |
一种改变离子束方向的装置
|
|
CN120500263A
(zh)
|
2019-02-28 |
2025-08-15 |
朗姆研究公司 |
利用侧壁清洁的离子束蚀刻
|
|
US11965238B2
(en)
|
2019-04-12 |
2024-04-23 |
Asm Ip Holding B.V. |
Selective deposition of metal oxides on metal surfaces
|
|
WO2020214327A1
(en)
|
2019-04-19 |
2020-10-22 |
Applied Materials, Inc. |
Ring removal from processing chamber
|
|
US12009236B2
(en)
|
2019-04-22 |
2024-06-11 |
Applied Materials, Inc. |
Sensors and system for in-situ edge ring erosion monitor
|
|
JP2022544221A
(ja)
|
2019-08-16 |
2022-10-17 |
ラム リサーチ コーポレーション |
ウエハ内の様々な反りを補償するために空間を調整する堆積
|
|
US11791126B2
(en)
*
|
2019-08-27 |
2023-10-17 |
Applied Materials, Inc. |
Apparatus for directional processing
|
|
WO2021050386A1
(en)
*
|
2019-09-13 |
2021-03-18 |
Applied Materials, Inc. |
Semiconductor processing chamber
|
|
US11158786B2
(en)
|
2019-09-25 |
2021-10-26 |
International Business Machines Corporation |
MRAM device formation with controlled ion beam etch of MTJ
|
|
TWI750521B
(zh)
*
|
2019-10-23 |
2021-12-21 |
聚昌科技股份有限公司 |
磁力線遮蔽控制反應腔室磁場之蝕刻機結構
|
|
US11139163B2
(en)
|
2019-10-31 |
2021-10-05 |
Asm Ip Holding B.V. |
Selective deposition of SiOC thin films
|
|
US11043394B1
(en)
|
2019-12-18 |
2021-06-22 |
Applied Materials, Inc. |
Techniques and apparatus for selective shaping of mask features using angled beams
|
|
US20210210355A1
(en)
*
|
2020-01-08 |
2021-07-08 |
Tokyo Electron Limited |
Methods of Plasma Processing Using a Pulsed Electron Beam
|
|
TWI862807B
(zh)
|
2020-03-30 |
2024-11-21 |
荷蘭商Asm Ip私人控股有限公司 |
相對於金屬表面在介電表面上之氧化矽的選擇性沉積
|
|
TWI865747B
(zh)
|
2020-03-30 |
2024-12-11 |
荷蘭商Asm Ip私人控股有限公司 |
在兩不同表面上同時選擇性沉積兩不同材料
|
|
TW202140832A
(zh)
|
2020-03-30 |
2021-11-01 |
荷蘭商Asm Ip私人控股有限公司 |
氧化矽在金屬表面上之選擇性沉積
|
|
CN111463107B
(zh)
*
|
2020-04-07 |
2023-04-28 |
北京晶亦精微科技股份有限公司 |
一种晶圆清洗设备
|
|
CN115398601A
(zh)
|
2020-04-21 |
2022-11-25 |
株式会社日立高新技术 |
等离子体处理装置
|
|
CN211957594U
(zh)
*
|
2020-05-29 |
2020-11-17 |
北京鲁汶半导体科技有限公司 |
一种离子束刻蚀旋转平台
|
|
US12139791B2
(en)
*
|
2020-06-15 |
2024-11-12 |
Lam Research Corporation |
Showerhead faceplates with angled gas distribution passages for semiconductor processing tools
|
|
US11948781B2
(en)
*
|
2020-06-16 |
2024-04-02 |
Applied Materials, Inc. |
Apparatus and system including high angle extraction optics
|
|
US11637242B2
(en)
|
2020-08-21 |
2023-04-25 |
Tokyo Electron Limited |
Methods for resistive RAM (ReRAM) performance stabilization via dry etch clean treatment
|
|
US12354873B2
(en)
*
|
2020-09-30 |
2025-07-08 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
System and method for multiple step directional patterning
|
|
KR102841631B1
(ko)
|
2020-12-01 |
2025-07-31 |
삼성전자주식회사 |
웨이퍼 처리 장치
|
|
JP7500450B2
(ja)
*
|
2021-01-21 |
2024-06-17 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
WO2023209812A1
(ja)
|
2022-04-26 |
2023-11-02 |
株式会社日立ハイテク |
プラズマ処理方法
|
|
US20250218745A1
(en)
*
|
2022-05-20 |
2025-07-03 |
Nextin, Inc. |
Static electrcity control device for semiconductor processing system
|
|
US12469715B2
(en)
*
|
2022-10-13 |
2025-11-11 |
Applied Materials, Inc. |
Dry etching with etch byproduct self-cleaning
|
|
US20240145252A1
(en)
*
|
2022-11-02 |
2024-05-02 |
Applied Materials, Inc. |
Faraday faceplate
|
|
US12400824B2
(en)
*
|
2022-12-13 |
2025-08-26 |
Applied Materials, Inc. |
Ion extraction optics having novel blocker configuration
|
|
US20250063749A1
(en)
*
|
2023-08-16 |
2025-02-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor device structure and methods of forming the same
|
|
US20250095967A1
(en)
*
|
2023-09-19 |
2025-03-20 |
Applied Materials, Inc. |
Plasma source with multiple extraction apertures
|