CN211957594U - 一种离子束刻蚀旋转平台 - Google Patents
一种离子束刻蚀旋转平台 Download PDFInfo
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Abstract
本实用新型涉及一种离子束刻蚀旋转平台,属于半导体加工领域。旋转平台的上部结构上端面设有基座;基座上端面设有静电卡盘,静电卡盘的下端面内设有若干条静电卡盘内冷却水道;上部结构与下部结构的轴向中心处设有与其内腔体相互贯通的旋转磁流体轴;上部结构的下端设有延伸部,延伸部延伸至下部结构的腔体内;下部结构的腔体内高扭矩电机;高扭矩电机布置在下部结构的腔体内,高扭矩电机与旋转磁流体轴相连并驱动转动;旋转磁流体轴的顶端与静电卡盘相固定;上部结构的腔体内位于基座的下端面设有顶针装置。离子束刻蚀旋转平台为上下圆柱体结构,结构紧凑、简单,区分明显,旋转平台为上下圆柱体结构,结构区分明显,重量较小,安装维护方便。
Description
技术领域
本实用新型提供了一种离子束刻蚀旋转平台,属于半导体加工领域。
背景技术
在离子束刻蚀系统(IBE)中,旋转平台是核心部件之一。离子束刻蚀平台是一个复杂的自动化系统,涉及气、电、液等系统的集成。由于涉及系统较多,且保持精密的运动性能,因此对于旋转平台的要求至关重要。
通常旋转平台包含,中空电机,用于平台旋转,动力传递;旋转接头,用于气、电、液的传递;静电卡盘或者机械卡盘,用于放置晶圆;顶针系统,用于晶圆的传输交互;旋转磁流体轴,用于隔离大气和真空的旋转运动等。现有的结构存在如下问题:
1.旋转平台体型较大,使得整个腔室空间变大,从而整机占地较大,在珍贵的无尘室内,广受诟病。
2.旋转平台较重,从而维护组装较麻烦。
3.内部空间狭小,操作维护不方便,
4.存在电机散热问题,长时间运行电机容易阻转,
5.旋转平台涉及水电气的连接,系统较多,装配复杂,平台旋转时,系统误差大,平台旋转轴向径向跳动大,影响刻蚀均匀性。
6.传统旋转平台通常采用的伺服电机和减速器或者中空电机等驱动载台旋转,由于减速机齿形等间隙的存在,平台旋转精度低。
实用新型内容
本实用新型针对上述不足提供了一种离子束刻蚀旋转平台。
本实用新型采用如下技术方案:
本实用新型所述的离子束刻蚀旋转平台,该旋转平台分为上部结构、下部结构;上部结构、下部结构内均为腔体结构;上部结构的上端面设有基座;基座上端面设有静电卡盘,静电卡盘的下端面内设有若干条静电卡盘内冷却水道;上部结构与下部结构的轴向中心处设有与其内腔体相互贯通的旋转磁流体轴;上部结构的下端设有延伸部,该延伸部延伸至下部结构的腔体内;下部结构的腔体内高扭矩电机;高扭矩电机布置在下部结构的腔体内,高扭矩电机与旋转磁流体轴相连并驱动转动;旋转磁流体轴的顶端与静电卡盘相固定;上部结构的腔体内位于基座的下端面设有顶针装置。
本实用新型所述的离子束刻蚀旋转平台,所述的旋转磁流体轴的位于下部结构的部分设有若干个环形通槽;若干个所述的环形通槽布置在旋转磁流体轴的圆周面;环形通槽内设有通孔,旋转磁流体轴内开设有若干个与若干个环形通槽相通的独立通道;该独立通道包括液体独立通道与气体独立通道;所述的基座内开设与顶针装置及磁流体轴相互连通的介质通道;
所述的上部结构面向下部结构的衔接面靠近旋转磁流体轴处设有高扭矩电机冷却水道,下部结构的腔体侧壁位于高扭矩电机定子部设有冷却水道。
本实用新型所述的离子束刻蚀旋转平台,所述的静电卡盘内的冷却水道成螺旋环形布置,所述的基座内开设通管,静电卡盘上的冷却水道与基座内通管相连通;基座内通管还与旋转磁流体轴内的独立通道相连。
本实用新型所述的离子束刻蚀旋转平台,所述的下部结构的底端设有冷却液出入接口,空气出入接口,旋转磁流体轴的底部侧壁设有氦气出入接口;冷却液出入接口,空气出入接口及氦气出入接口分别与环形通槽相连通;
本实用新型所述的离子束刻蚀旋转平台,所述的冷却液出入接口与上部结构、下部结构内的冷却水道相互连通;冷却水道用于冷却高扭矩电机;
所述的空气出入接口通过旋转磁流体轴内的气体独立通道相连通,气体独立通道与顶针装置相互连通;空气出入接口将气体通入顶针装置内,用于作动顶针装置运作;
冷却液出入接口通过旋转磁流体轴内的液体独立通道相连通,液体独立通道与静电卡盘的冷却水道相互连通,冷却液出入接口将冷却液体通入静电卡盘内的冷却水道内,用于静电卡盘降温;
所述的氦气出入接口通过旋转磁流体轴内的气体独立通道相连通,气体独立通道相连通至静电卡盘,用于为静电卡盘上的晶圆冷却。
本实用新型所述的离子束刻蚀旋转平台,其特征在于:所述的旋转磁流体轴的底部侧壁与高压电电刷相连,高压电电刷通过导线与外部电源相连,高压电电刷为静电卡盘静电吸附传递电力。
有益效果
本实用新型所述的离子束刻蚀旋转平台,离子束刻蚀旋转平台为上下圆柱体结构,结构紧凑、简单,区分明显,旋转平台为上下圆柱体结构,结构区分明显,重量较小,安装维护方便。
本实用新型所述的离子束刻蚀旋转平台, 采用力矩电机直接连接旋转轴,结构紧凑,旋转平台同轴度好,平台旋转精度高,减小对刻蚀均匀性的影响;避免了同类旋转平台通常使用电机与减速机连接,导致旋转平台外形尺寸偏大,重量较重。
本实用新型所述的离子束刻蚀旋转平台,整体的内腔为封闭式结构,通过该封闭结构其内的封闭电机冷却水道,能对系统进行有效冷却,避免长时间运行发生高温阻转。
本实用新型所述的离子束刻蚀旋转平台将各种气、液、电通道集成在磁流体旋转轴上,减小旋转轴上的附属连接零件,从而降低旋转平台旋转误差,且显著降低了旋转平台的外形尺寸及重量,从而可以缩小整个外部真空腔室的尺寸,因此本实用新型所采用的整机空间尺寸结构得到合理控制。
附图说明
图1是本实用新型的结构示意图;
图2是本实用新型的冷却水通道示意图;
图3是本实用新型的压缩空气通道示意图;
图4是本实用新型的高压电通路示意图;
图5是本实用新型的氦气通道示意图;
图6是本实用新型的冷却液通道示意图。
具体实施方式
为使本实用新型实施例的目的和技术方案更加清楚,下面将结合本实用新型实施例的附图,对本实用新型实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本实用新型的一部分实施例,而不是全部的实施例。基于所描述的本实用新型的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本实用新型保护的范围。
如图1所示:一种离子束刻蚀旋转平台,该旋转平台分为上部结构108、下部结构204;上部结构108、下部结构204内均为腔体结构;上部结构108形状为中空圆柱体,材料为航空铝材,图示区域A内为真空环境,与112旋转磁流体通过螺栓连接,通过密封圈密隔离大气环境;工艺时,108为固定状态。下部结构204材质为航空铝材,图示区域B为大气环境,204与108通过螺栓连接固定。
上部结构108的上端面设有基座106;基座106上端面设有静电卡盘102,基座106,形状为圆柱体,材质为航空铝材或不锈钢,用于传递气、电、液等介质,传递介质的接口通过密封圈密封;工艺过程中,106随转台一起旋转,需保证同轴度及圆柱度。
静电卡盘102的下端面内设有若干条静电卡盘内冷却水道302;静电卡盘102内的冷却水道302成螺旋环形布置,基座106内开设通管,静电卡盘102上的冷却水道302与基座106内通管相连通;基座106内通管还与旋转磁流体轴112内的独立通道相连。
102为静电卡盘(ESC),作为晶圆载台;302为静电卡盘内冷却水道;工艺时,晶圆被静电吸附,晶圆在转台上匀速旋转。卡座104用于保护静电卡盘ESC,形状为圆环状,通过螺栓与基座106连接,刻蚀过程中,保护静电卡盘周边被高能粒子轰击,延长静电卡盘使用寿命,104材质为石英或陶瓷,随旋转平台一起运动。
上部结构108与下部结构204的轴向中心处设有与其内腔体相互贯通的旋转磁流体轴112;旋转磁流体轴112主体材质为不锈钢,需采用较高精度轴承,保证同轴度及圆柱度;旋转磁流体轴112既能维持该系统高真空的环境,又能保证平台的稳定可靠旋转;
上部结构102的下端设有延伸部,该延伸部延伸至下部结构204的腔体内;下部结构204的腔体内高扭矩电机;高扭矩电机布置在下部结构204的腔体内,高扭矩电机与旋转磁流体轴112相连并驱动转动;旋转磁流体轴112的顶端与静电卡盘相固定;上部结构102的腔体内位于基座的下端面设有顶针装置110。
整个旋转平台为圆柱体,上下结构,图示108为上部腔室,旋转平台上部为旋转部分,包括旋转磁流体轴、顶针系统、静电卡盘及附属部件等;上部分各部件由下到上,由内向外连接;旋转平台下部分固定,图示204为下部腔室,需要连接的气、电、液等介质,全部在下部连接,下部分各部件由上到下,由内到外连接;整个结构连接紧凑,维护安装方便。
顶针系统110用于晶圆的升降传递,升降信号通过光纤传递,402为光纤接口;110顶针系统与106通过气缸连接;工艺时,顶针系统随旋转平台同步运动。
高扭矩电机定子202,定子部分镶嵌在上部结构108、下部结构204的内部,通过下部结构204周边压住,206为高扭矩电机转子,驱动旋转磁流体轴112旋转,电机转子206与旋转磁流体轴112通过键过盈配合,电机定子部分由下部结构204与上部结构108定位,高扭矩直驱电机与磁流体直接轴连接,减小了操作空间,降低转台的高度,从而降低了整体外形尺寸,避免了齿轮间隙等对运动精度的影响。
如图2所示:冷却水通道接口404为电机及系统提供循环冷却水;A1为冷却水A通道,A2为冷却水B通道;冷却水由外部水机供应,一般水温维持22±2℃,从底部404接口接入,404接口与204通过螺栓连接,在旋转平台内部形成回路,所有水道连接部位通过密封圈与外部隔离。
如图3压缩空气通道示意所示:压缩空气通道接口406为顶针系统升降提供动力源;B1为压缩空气A通道,B2为压缩空气B通道;气源洁净干燥,一般气源压力为0.5-0.6Mpa,压缩空气从底部接口406接入,406接口与204通过螺栓连接固定,气道进入磁流体旋转轴,通过旋转密封隔离,分别通入顶针气缸,两组气道分别用于气缸的升降运动,所有气道连接部位通过密封圈密封与外部隔离。
如图4高压电通道示意所示:高压电电刷412为静电卡盘静电吸附传递电力;C1为高压电A通道,C2为高压电B通道;其中电滑环定子部分为416,外部导线接在416上,通道用于穿过高压电导线,高压电通常通过旋转电滑环传递电力,电滑环转子部分414固定在磁流体轴上,导线与磁流体轴同步旋转,接入静电卡盘。
如图5氦气通道示意所示408为氦气通道接口,D为氦气通道。工艺时,氦气为晶圆冷却;氦气由底部接口408通入,408接口与204通过螺栓连接,氦气通入磁流体旋转轴内,通过旋转密封隔离外部环境。
图6冷却液通道示意所示:冷却液通道接口410为冷却液通往静电卡盘,用于晶圆冷却;冷却液由外部接入,E1为冷却液A通道,E2为冷却液B通道;410接口固定在204上,冷却液通入磁流体旋转轴内,通过旋转密封隔离外部环境,所有冷却液通道连接部分通过密封圈隔离,冷却液通道在旋转平台内部形成回路。
在实际使用中,整个系统内部处于密封环境下,散热不畅,且外部高能粒子不断轰击,亦会引起环境温度升高,电机常常因为环境温度过高发生阻转等故障,图示304为力矩电机部分冷却水道,306为下部腔体部分冷却水道,与304联通,循环的冷却水能及时将热量带走,保证系统的稳定可靠,冷却介质与外部环境通过密封圈隔离。
以上所述,仅为本实用新型较佳的具体实施方式,但本实用新型的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本实用新型揭露的技术范围内,可轻易想到的变化或替换,都应涵盖在本实用新型的保护范围之内。因此,本实用新型的保护范围应该以权利要求的保护范围为准。
Claims (6)
1.一种离子束刻蚀旋转平台,其特征在于:该旋转平台分为上部结构、下部结构;上部结构、下部结构内均为腔体结构;上部结构的上端面设有基座;基座上端面设有静电卡盘,静电卡盘的下端面内设有若干条静电卡盘内冷却水道;上部结构与下部结构的轴向中心处设有与其内腔体相互贯通的旋转磁流体轴;上部结构的下端设有延伸部,该延伸部延伸至下部结构的腔体内;下部结构的腔体内高扭矩电机;高扭矩电机布置在下部结构的腔体内,高扭矩电机与旋转磁流体轴相连并驱动转动;旋转磁流体轴的顶端与静电卡盘相固定;上部结构的腔体内位于基座的下端面设有顶针装置。
2.根据权利要求1所述的离子束刻蚀旋转平台,其特征在于:所述的旋转磁流体轴的位于下部结构的部分设有若干个环形通槽;若干个所述的环形通槽布置在旋转磁流体轴的圆周面;环形通槽内设有通孔,旋转磁流体轴内开设有若干个与若干个环形通槽相通的独立通道;该独立通道包括液体独立通道与气体独立通道;所述的基座内开设与顶针装置及磁流体轴相互连通的介质通道;
所述的上部结构面向下部结构的衔接面靠近旋转磁流体轴处设有高扭矩电机冷却水道,下部结构的腔体侧壁位于高扭矩电机定子部设有冷却水道。
3.根据权利要求2所述的离子束刻蚀旋转平台,其特征在于:所述的静电卡盘内的冷却水道成螺旋环形布置,所述的基座内开设通管,静电卡盘上的冷却水道与基座内通管相连通;基座内通管还与旋转磁流体轴内的独立通道相连。
4.根据权利要求2所述的离子束刻蚀旋转平台,其特征在于:所述的下部结构的底端设有冷却液出入接口,空气出入接口,旋转磁流体轴的底部侧壁设有氦气出入接口;冷却液出入接口,空气出入接口及氦气出入接口分别与环形通槽相连通。
5.根据权利要求4所述的离子束刻蚀旋转平台,其特征在于:所述的冷却液出入接口与上部结构、下部结构内的冷却水道相互连通;冷却水道用于冷却高扭矩电机;
所述的空气出入接口通过旋转磁流体轴内的气体独立通道相连通,气体独立通道与顶针装置相互连通;空气出入接口将气体通入顶针装置内,用于作动顶针装置运作;
冷却液出入接口通过旋转磁流体轴内的液体独立通道相连通,液体独立通道与静电卡盘的冷却水道相互连通,冷却液出入接口将冷却液体通入静电卡盘内的冷却水道内,用于静电卡盘降温;
所述的氦气出入接口通过旋转磁流体轴内的气体独立通道相连通,气体独立通道相连通至静电卡盘,用于为静电卡盘上的晶圆冷却。
6.根据权利要求1所述的离子束刻蚀旋转平台,其特征在于:所述的旋转磁流体轴的底部侧壁与高压电电刷相连,高压电电刷通过导线与外部电源相连,高压电电刷为静电卡盘静电吸附传递电力。
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