JP2015015442A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2015015442A
JP2015015442A JP2013142861A JP2013142861A JP2015015442A JP 2015015442 A JP2015015442 A JP 2015015442A JP 2013142861 A JP2013142861 A JP 2013142861A JP 2013142861 A JP2013142861 A JP 2013142861A JP 2015015442 A JP2015015442 A JP 2015015442A
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Japan
Prior art keywords
pad
semiconductor device
conductive tape
conductive adhesive
conductive
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JP2013142861A
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English (en)
Inventor
靖和 山本
Yasukazu Yamamoto
靖和 山本
勝巳 宮脇
Katsumi Miyawaki
勝巳 宮脇
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013142861A priority Critical patent/JP2015015442A/ja
Priority to US14/222,723 priority patent/US9018775B2/en
Priority to KR1020140082372A priority patent/KR101574145B1/ko
Priority to CN201410323364.3A priority patent/CN104282651A/zh
Publication of JP2015015442A publication Critical patent/JP2015015442A/ja
Pending legal-status Critical Current

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

【課題】製品の品質及び生産性を向上することができる半導体装置を得る。【解決手段】基板１上にパッド２，３が隣接して設けられている。導電性テープ６がパッド２，３に貼り付けられている。導電性テープ６はパッド２の内側に貫通穴７を有する。導電性接着剤８が貫通穴７内に塗布されている。導電性接着剤８は導電性テープ６よりも高い熱伝導率を持つ。半導体チップ９が導電性接着剤８によりパッド２上に実装されている。電子部品１０が導電性テープ６によりパッド３上に実装されている。【選択図】図３

Description

本発明は、製品の品質及び生産性を向上することができる半導体装置に関する。
光モジュールや携帯電話用パワーアンプにおいて、電気特性の向上と小型化のために、半導体チップやコンデンサ部品を狭い間隔で高密度に実装する狭隣接実装が必要となってきている。現在の実装方法では、Ａｇペースト樹脂をダイパット上に転写やディスペンスにより塗布し、そのＡｇペースト樹脂上に部品を自動ダイボンド装置により載せる。また、部品を導電性テープにより実装する方法も提案されている（例えば、特許文献１の段落００１３−００１４及び図３参照）。
実開平６−２１２４４号公報
Ａｇペースト樹脂による実装の場合、チップ端と部品端からＡｇペースト樹脂がはみ出す。特に狭隣接実装では両者からはみ出したＡｇペースト樹脂が狭い隙間で重なり合って樹脂量が多くなる。このため、Ａｇペースト樹脂が半導体と電子部品の上面に這い上がり、上面電極と下面側の配線がショートする。また、大電流を流し発熱量が大きいアクティブ部品を導電性テープ上に実装した場合、放熱性と電流容量が不足し部品が故障する可能性がある。このため、製品の品質及び生産性が低下するという問題があった。
本発明は、上述のような課題を解決するためになされたもので、その目的は製品の品質及び生産性を向上することができる半導体装置を得るものである。
本発明に係る半導体装置は、基板と、基板上に隣接して設けられた第１及び第２のパッドと、前記第１及び第２のパッドに貼り付けられ、前記第１のパッドの内側に貫通穴を有する導電性テープと、前記貫通穴内に塗布され、前記導電性テープよりも高い熱伝導率を持つ導電性接着剤と、前記導電性接着剤により前記第１のパッド上に実装された半導体チップと、前記導電性テープにより前記第２のパッド上に実装された電子部品とを備えることを特徴とする。
本発明により、製品の品質及び生産性を向上することができる。
本発明の実施の形態に係る半導体装置を示す斜視図である。 本発明の実施の形態に係る半導体装置の内部を示す上面図である。 本発明の実施の形態に係る半導体装置の主要部を示す断面図である。 比較例に係る半導体装置を示す断面図である。 比較例に係る半導体装置を示す断面図である。
図１は、本発明の実施の形態に係る半導体装置を示す斜視図である。ただし、図１では一部を切り欠いて装置内部を示している。図２は、本発明の実施の形態に係る半導体装置の内部を示す上面図である。図３は、本発明の実施の形態に係る半導体装置の主要部を示す断面図である。
基板１はセラミック材又は有機材である。基板１の上面にパッド２，３，４及び配線５を有する電気回路が設けられている。パッド２，３は隣接して配置され、配線５を介して接続されている。はんだ付け性とワイヤボンド性を向上させるため、パッド２，３，４の最表層には表面処理としてＡｕめっきが施されている。
導電性テープ６がパッド２，３に貼り付けられている。導電性テープ６は、熱を加えることで硬化して接合強度を保つダイボンドフィルムなどである。導電性テープ６はパッド２の内側に貫通穴７を有する。導電性接着剤８が貫通穴７内に塗布されている。導電性接着剤８はＡｇペースト樹脂（Ａｇエポシキ樹脂、Ａｇホリィミド樹脂）又ははんだなどであり、導電性テープ６よりも高い熱伝導率を持つ。
半導体チップ９が導電性テープ６と導電性接着剤８によりパッド２上に実装されている。電子部品１０が導電性テープ６によりパッド３上に実装されている。半導体チップ９は大電流を流し発熱量が大きいアクティブ部品である。電子部品１０はコンデンサ、インダクタ、スイッチ等である。
半導体チップ９の下面に下面電極１１が設けられ、半導体チップ９の上面に上面電極１２，１３が設けられている。下面電極１１は導電性接着剤８を介してパッド２に接続されている。貫通穴７のサイズは半導体チップ９の外形サイズより若干小さい。導電性テープ６には厚みが存在するため、導電性接着剤８は導電性テープ６の貫通穴７内において下面電極１１とパッド２の間に留まる。
半導体チップ９の上面電極１２が金属ワイヤ１４を介してパッド４に接続され、上面電極１３が金属ワイヤ１５を介して電子部品１０に接続されている。半導体チップ９、電子部品１０、及び金属ワイヤ１４，１５は樹脂１６により封止されている。
続いて、本実施の形態の効果を比較例と比較して説明する。図４及び図５は比較例に係る半導体装置を示す断面図である。比較例では半導体チップ９と電子部品１０の実装に導電性接着剤８のみを用いる。このため、図４に示すように半導体チップ９と電子部品１０の間隔を近づけると、部品からはみ出した導電性接着剤８が半導体チップ９と電子部品１０の上面に這い上がり、上面電極１３と下面側のパッド２等がショートする。従って、図５に示すように半導体チップ９と電子部品１０の間隔を広げなければならない。
一方、本実施の形態では、導電性テープ６の貫通穴７に塗布した導電性接着剤８を用いて半導体チップ９を実装する。半導体チップ９が蓋として機能するため、導電性接着剤８が貫通穴７から漏れ広がるのを防ぐことができる。従って、半導体チップ９と電子部品１０の間隔を近づけることができる。この結果、製品を小型化することができ、部品間を接続する金属ワイヤ１５の長さが短くなることで電気特性が向上する。また、半導体チップ９の実装に高い熱伝導率を持つ導電性接着剤８を用いる。これにより、放熱性と電流容量を確保できる。この結果、製品の品質及び生産性を向上させることができる。なお、アクティブ部品ではない電子部品１０は導電性テープ６により実装しても問題は生じない。
１ 基板、２ パッド（第１のパッド）、３ パッド（第２のパッド）、６ 導電性テープ、７ 貫通穴、８ 導電性接着剤、９ 半導体チップ、１０ 電子部品、１１ 下面電極、１３ 上面電極、１５ 金属ワイヤ

Claims (2)

  1. 基板と、
    基板上に隣接して設けられた第１及び第２のパッドと、
    前記第１及び第２のパッドに貼り付けられ、前記第１のパッドの内側に貫通穴を有する導電性テープと、
    前記貫通穴内に塗布され、前記導電性テープよりも高い熱伝導率を持つ導電性接着剤と、
    前記導電性接着剤により前記第１のパッド上に実装された半導体チップと、
    前記導電性テープにより前記第２のパッド上に実装された電子部品とを備えることを特徴とする半導体装置。
  2. 前記半導体チップは、チップ下面に設けられた下面電極と、チップ上面に設けられた上面電極とを有し、
    前記下面電極は前記導電性接着剤を介して前記第１のパッドに接続され、
    前記上面電極はワイヤを介して前記電子部品に接続されていることを特徴とする請求項１に記載の半導体装置。
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