KR20150006358A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR20150006358A
KR20150006358A KR20140082372A KR20140082372A KR20150006358A KR 20150006358 A KR20150006358 A KR 20150006358A KR 20140082372 A KR20140082372 A KR 20140082372A KR 20140082372 A KR20140082372 A KR 20140082372A KR 20150006358 A KR20150006358 A KR 20150006358A
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South Korea
Prior art keywords
pad
conductive tape
semiconductor chip
conductive adhesive
electrically conductive
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KR20140082372A
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English (en)
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KR101574145B1 (ko
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야스카즈 야마모토
카쓰미 미야와키
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미쓰비시덴키 가부시키가이샤
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Publication of KR20150006358A publication Critical patent/KR20150006358A/ko
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Publication of KR101574145B1 publication Critical patent/KR101574145B1/ko

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    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

제품의 품질 및 생산성을 향상시킬 수 있는 반도체장치를 얻는다. 기판(1) 위에 패드 2, 3이 인접해서 설치되어 있다. 도전성 테이프(6)가 패드 2, 3에 부착되어 있다. 도전성 테이프(6)는 패드 2의 내측에 관통공(7)을 갖는다. 도전성 접착제(8)가 관통공(7) 내부에 도포되어 있다. 도전성 접착제(8)는 도전성 테이프(6)보다도 높은 열전도율을 갖는다. 반도체 칩(9)이 도전성 접착제(8)에 의해 패드 2 위에 실장되어 있다. 전자부품(10)이 도전성 테이프(6)에 의해 패드 3 위에 실장되어 있다.

Description

반도체장치{SEMICONDUCTOR DEVICE}
본 발명은, 제품의 품질 및 생산성을 향상시킬 수 있는 반도체장치에 관한 것이다.
광 모듈이나 휴대전화용 파워앰프에 있어서, 전기 특성의 향상과 소형화를 위해, 반도체 칩이나 콘덴서 부품을 좁은 간격으로 고밀도로 실장하는 협인접 실장(close-adjacency mounting)이 필요하게 되기 시작하고 있다. 현재의 실장방법에서는, Ag 페이스트 수지를 다이패드 위에 전사나 디스펜싱에 의해 도포하고, 그 Ag 페이스트 수지 위에 부품을 자동 다이본드 장치에 의해 싣는다. 또한, 부품을 도전성 테이프에 의해 실장하는 방법도 제안되어 있다(예를 들면, 특허문헌 1의 단락 0013-0014 및 도 3 참조).
일본국 실개평 제 6-21244호 공보
Ag 페이스트 수지에 의한 실장의 경우, 칩 끝과 부품 끝에서 Ag 페이스트 수지가 튀어나온다. 특히 협인접 실장에서는 양자로부터 튀어나온 Ag 페이스트 수지가 좁은 틈에서 중첩되어 수지량이 많아진다. 이 때문에, Ag 페이스트 수지가 반도체와 전자부품의 윗면으로 기어올라가, 윗면 전극과 밑면측의 배선이 쇼트한다. 또한, 대전류를 흘려 발열량이 큰 액티브 부품을 도전성 테이프 위에 실장한 경우, 방열성과 전류용량이 부족하여 부품이 고장날 가능성이 있다. 이 때문에, 제품의 품질 및 생산성이 저하한다고 하는 문제가 있었다.
본 발명은, 전술한 것과 같은 과제를 해결하기 위해 이루어진 것으로서, 그 목적은 제품의 품질 및 생산성을 향상시킬 수 있는 반도체장치를 얻는 것이다.
본 발명에 관한 반도체장치는, 기판과, 기판 위에 인접해서 설치된 제1 및 제2 패드와, 상기 제1 및 제2 패드에 부착되고, 상기 제1 패드의 내측에 관통공을 갖는 도전성 테이프와, 상기 관통공 내부에 도포되고, 상기 도전성 테이프보다도 높은 열전도율을 갖는 도전성 접착제와, 상기 도전성 접착제에 의해 상기 제1 패드 위에 실장된 반도체 칩과, 상기 도전성 테이프에 의해 상기 제2 패드 위에 실장된 전자부품을 구비한 것을 특징으로 한다.
본 발명에 의해, 제품의 품질 및 생산성을 향상시킬 수 있다.
도 1은 본 발명의 실시형태에 관한 반도체장치를 나타낸 사시도다.
도 2는 본 발명의 실시형태에 관한 반도체장치의 내부를 나타낸 평면도다.
도 3은 본 발명의 실시형태에 관한 반도체장치의 주요부를 나타낸 단면도다.
도 4는 비교예에 관한 반도체장치를 나타낸 단면도다.
도 5는 비교예에 관한 반도체장치를 나타낸 단면도다.
도 1은, 본 발명의 실시형태에 관한 반도체장치를 나타낸 사시도다. 단, 도 1에서는 일부를 절결하여 장치 내부를 나타내고 있다. 도 2는, 본 발명의 실시형태에 관한 반도체장치의 내부를 나타낸 평면도다. 도 3은, 본 발명의 실시형태에 관한 반도체장치의 주요부를 나타낸 단면도다.
기판(1)은 세라믹재 또는 유기재이다. 기판(1)의 윗면에 패드 2, 3, 4 및 배선(5)을 갖는 전기회로가 설치되어 있다. 패드 2, 3은 인접해서 배치되고, 배선(5)을 거쳐 접속되어 있다. 납땜성과 와이어 본드성을 향상시키기 위해, 패드 2, 3, 4의 최표층에는 표면처리로서 Au 도금이 실시되어 있다.
도전성 테이프(6)가 패드 2, 3에 부착되어 있다. 도전성 테이프(6)는, 열을 가함으로써 경화해서 접합 강도를 유지하는 다이본드 필름 등이다. 도전성 테이프(6)는 패드 2의 내측에 관통공(7)을 갖는다. 도전성 접착제(8)가 관통공(7) 내부에 도포되어 있다. 도전성 접착제(8)는 Ag 페이스트 수지(Ag 에폭시 수지, Ag 폴리이미드 수지) 또는 땜납 등이며, 도전성 테이프(6)보다도 높은 열전도율을 갖는다.
반도체 칩(9)이 도전성 테이프(6)와 도전성 접착제(8)에 의해 패드 2 위에 실장되어 있다. 전자부품(10)이 도전성 테이프(6)에 의해 패드 3 위에 실장되어 있다. 반도체 칩(9)은 대전류를 흘려 발열량이 큰 액티브 부품이다. 전자부품(10)은 콘덴서, 인덕터, 스위치 등이다.
반도체 칩(9)의 밑면에 하면 전극(11)이 설치되고, 반도체 칩(9)의 윗면에 상면 전극(12, 13)이 설치되어 있다. 하면 전극(11)은 도전성 접착제(8)를 개재하여 패드 2에 접속되어 있다. 관통공(7)의 사이즈는 반도체 칩(9)의 외형 사이즈보다 약간 작다. 도전성 테이프(6)에는 두께가 존재하기 때문에, 도전성 접착제(8)는 도전성 테이프(6)의 관통공(7) 내부에 있어서 하면 전극(11)과 패드 2 사이에 머무른다.
반도체 칩(9)의 상면 전극 12가 금속 와이어 14를 거쳐 패드 4에 접속되고, 상면 전극 13이 금속 와이어 15를 거쳐 전자부품(10)에 접속되어 있다. 반도체 칩(9), 전자부품(10), 및 금속 와이어 14, 15는 수지(16)에 의해 봉지되어 있다.
이어서, 본 실시형태의 효과를 비교예와 비교해서 설명한다. 도 4 및 도 5는 비교예에 관한 반도체장치를 나타낸 단면도다. 비교예에서는 반도체 칩(9)과 전자부품(10)의 실장에 도전성 접착제(8) 만을 사용한다. 이 때문에, 도 4에 나타낸 것과 같이 반도체 칩(9)과 전자부품(10)의 간격을 가깝게 하면, 부품으로부터 튀어나온 도전성 접착제(8)가 반도체 칩(9)과 전자부품(10)의 윗면에 기어올라, 상면 전극 13과 밑면측의 패드 2 등이 쇼트한다. 따라서, 도 5에 나타낸 것과 같이 반도체 칩(9)과 전자부품(10)의 간격을 넓히지 않으면 안된다.
한편, 본 실시형태에서는, 도전성 테이프(6)의 관통공(7)에 도포한 도전성 접착제(8)를 사용해서 반도체 칩(9)을 실장한다. 반도체 칩(9)이 덮개로서 기능하기 때문에, 도전성 접착제(8)가 관통공(7)으로부터 새어서 퍼지는 것을 방지할 수 있다. 따라서, 반도체 칩(9)과 전자부품(10)의 간격을 가깝게 할 수 있다. 이 결과, 제품을 소형화할 수 있고, 부품 사이를 접속하는 금속 와이어 15의 길이가 짧아짐으로써 전기 특성이 향상된다. 또한, 반도체 칩(9)의 실장에 높은 열전도율을 갖는 도전성 접착제(8)를 사용한다. 이에 따라, 방열성과 전류용량을 확보할 수 있다. 이 결과, 제품의 품질 및 생산성을 향상시킬 수 있다. 이때, 액티브 부품이 아닌 전자부품(10)은 도전성 테이프(6)에 의해 실장해도 문제는 생기지 않는다.
1 기판, 2 패드(제1 패드), 3 패드(제2 패드), 6 도전성 테이프, 7 관통공, 8 도전성 접착제, 9 반도체 칩, 10 전자부품, 11 하면 전극, 13 상면 전극, 15 금속 와이어

Claims (2)

  1. 기판과,
    기판 위에 인접해서 설치된 제1 및 제2 패드와,
    상기 제1 및 제2 패드에 부착되고, 상기 제1 패드의 내측에 관통공을 갖는 도전성 테이프와,
    상기 관통공 내부에 도포되고, 상기 도전성 테이프보다도 높은 열전도율을 갖는 도전성 접착제와,
    상기 도전성 접착제에 의해 상기 제1 패드 위에 실장된 반도체 칩과,
    상기 도전성 테이프에 의해 상기 제2 패드 위에 실장된 전자부품을 구비한 것을 특징으로 하는 반도체장치.
  2. 제 1항에 있어서,
    상기 반도체 칩은, 칩 밑면에 설치된 하면 전극과, 칩 윗면에 설치된 상면 전극을 갖고,
    상기 하면 전극은 상기 도전성 접착제를 개재하여 상기 제1 패드에 접속되고,
    상기 상면 전극은 와이어를 거쳐 상기 전자부품에 접속되어 있는 것을 특징으로 하는 반도체장치.
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