JP2014526149A5 - - Google Patents
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- JP2014526149A5 JP2014526149A5 JP2014522989A JP2014522989A JP2014526149A5 JP 2014526149 A5 JP2014526149 A5 JP 2014526149A5 JP 2014522989 A JP2014522989 A JP 2014522989A JP 2014522989 A JP2014522989 A JP 2014522989A JP 2014526149 A5 JP2014526149 A5 JP 2014526149A5
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- Prior art keywords
- component
- substrate
- metal
- opening
- metal layer
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- 239000002184 metal Substances 0.000 claims 24
- 239000000758 substrate Substances 0.000 claims 12
- 239000000463 material Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
Claims (20)
- 構成要素であって、
前面及び前記前面から隔った裏面を有する基板であって、10ppm/℃未満の熱膨張係数(CTE)を有する、基板と、
前記裏面から前記前面に向かって延在する開口部であって、前記前面及び裏面の間の内面を画定する、開口部と、
前記開口部内部に延在する導電ビアであって、前記内面の上方に重なる第1金属層、及び前記第1金属層の上方に重なり、前記第1金属層と電気的に結合された第2金属領域であって、前記第1金属層のCTEよりも大きいCTEを有する、第2金属領域を含む、導電ビアと、
を含み、
前記導電ビアは、前記導電ビアの直径にわたって、前記第2金属領域の前記CTEの80%未満である実効CTEを有し、
前記基板が、前記開口部と前記前面又は裏面のうちの少なくとも一方との間の移行面を有し、前記移行面の半径は前記開口部の半径の5%よりも大きい、
構成要素。 - 前記第2金属領域は、前記第1金属層と向かい合う外面と、前記第2金属領域内に構成された中央開口部を取り囲む内面と、を有する、請求項1に記載の構成要素。
- 前記第2金属領域の内面をコーティングする絶縁誘電体層を更に含む、請求項2に記載の構成要素。
- 前記導電ビアは、前軸方向端部及び裏軸方向端部を有し、前記開口部は、前記前軸方向端部及び裏軸方向端部の一方に形成された凹部である、請求項2に記載の構成要素。
- 前記開口部は、前記導電ビアの前記裏軸方向端部に形成された凹部であり、前記凹部は、前記基板の裏面の下方で延びている、請求項4に記載の構成要素。
- 前記凹部の露出面が、前記導電ビアの前記金属とは異なる材料である障壁層でコーティングされる、請求項5に記載の構成要素。
- 前記凹部の露出面は、前記凹部を少なくとも部分的に充填するポリマーでコーティングされている、請求項5に記載の構成要素。
- 前記凹部は、前記基板の前面と平行な横方向において、前記導電ビアの直径よりも小さい最大直径を有する、請求項5に記載の構成要素。
- 前記第2金属領域は、前記第1金属層をコンフォーマルコーティングする、請求項1に記載の構成要素。
- 前記第2金属領域は、前記基板の前面と裏面との間で前記開口部内で延びている、請求項1に記載の構成要素。
- 外部要素との相互接続のために前記裏面において露出した接触面を有する導電コンタクトを更に含み、前記接触面は、前記第2金属領域の露出面である、請求項1に記載の構成要素。
- 前記基板は、実質的に半導体材料からなり、前記構成要素は、前記開口部の内面をコーティングする絶縁誘電体層であって、少なくとも前記開口部内部で前記基板から前記導電ビアを分離し、絶縁する絶縁誘電体層を更に含む、請求項1に記載の構成要素。
- 前記導電ビアの一部は、前記基板の材料と直接接触している、請求項1に記載の構成要素。
- 前記基板は、実質的に誘電体材料からなる、請求項1に記載の構成要素。
- 前記前面において複数の導電要素を更に含み、前記複数の導電要素のうちの少なくとも一部は前記導電ビアの各々と電気的に接続され、前記基板が、前記複数の導電要素のうちの少なくとも一部と電気的に接続された複数の能動半導体デバイスを統合する、請求項1に記載の構成要素。
- 前記導電要素は、前記基板の前面から離れる方に向いた頂面と、前記前面と向かい合わせの底面とを有し、前記第1金属材料は、前記導電要素の底面と接触して形成されている、請求項15に記載の構成要素。
- 前記第2金属領域は、前記第1金属層によって前記導電要素から分離されている、請求項16に記載の構成要素。
- 前記導電ビアは、前記第1金属層と前記内面の間に第3の金属層を含み、前記第3金属層は、前記第1金属層及び前記第2金属領域とは異なる金属である、請求項1に記載の構成要素。
- 請求項1に記載の構成要素と、この構成要素に電気的に接続される1つ以上の他の電子構成要素とを備える、システム。
- ハウジングを更に備え、前記構成要素及び前記他の電子構成要素が、前記ハウジングに実装される、請求項19に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/193,814 US8816505B2 (en) | 2011-07-29 | 2011-07-29 | Low stress vias |
US13/193,814 | 2011-07-29 | ||
PCT/US2012/048288 WO2013019541A2 (en) | 2011-07-29 | 2012-07-26 | Low-stress vias |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014526149A JP2014526149A (ja) | 2014-10-02 |
JP2014526149A5 true JP2014526149A5 (ja) | 2015-09-10 |
JP6058664B2 JP6058664B2 (ja) | 2017-01-11 |
Family
ID=46634544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014522989A Active JP6058664B2 (ja) | 2011-07-29 | 2012-07-26 | 低応力ビア |
Country Status (5)
Country | Link |
---|---|
US (4) | US8816505B2 (ja) |
JP (1) | JP6058664B2 (ja) |
KR (1) | KR101928320B1 (ja) |
TW (1) | TWI538147B (ja) |
WO (1) | WO2013019541A2 (ja) |
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2011
- 2011-07-29 US US13/193,814 patent/US8816505B2/en active Active
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2012
- 2012-07-26 WO PCT/US2012/048288 patent/WO2013019541A2/en active Application Filing
- 2012-07-26 KR KR1020147005019A patent/KR101928320B1/ko active IP Right Grant
- 2012-07-26 TW TW101127123A patent/TWI538147B/zh active
- 2012-07-26 JP JP2014522989A patent/JP6058664B2/ja active Active
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2014
- 2014-08-01 US US14/450,109 patent/US9214425B2/en active Active
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2015
- 2015-07-16 US US14/801,259 patent/US9659858B2/en active Active
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2017
- 2017-05-17 US US15/597,699 patent/US10283449B2/en active Active
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