JP2014521111A5 - - Google Patents
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- JP2014521111A5 JP2014521111A5 JP2014517551A JP2014517551A JP2014521111A5 JP 2014521111 A5 JP2014521111 A5 JP 2014521111A5 JP 2014517551 A JP2014517551 A JP 2014517551A JP 2014517551 A JP2014517551 A JP 2014517551A JP 2014521111 A5 JP2014521111 A5 JP 2014521111A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate table
- mode
- support structure
- target portion
- patterning device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161505768P | 2011-07-08 | 2011-07-08 | |
| US61/505,768 | 2011-07-08 | ||
| PCT/EP2012/060133 WO2013007442A1 (en) | 2011-07-08 | 2012-05-30 | Lithographic patterning process and resists to use therein |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017208377A Division JP6637943B2 (ja) | 2011-07-08 | 2017-10-27 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014521111A JP2014521111A (ja) | 2014-08-25 |
| JP2014521111A5 true JP2014521111A5 (OSRAM) | 2015-07-16 |
| JP6236000B2 JP6236000B2 (ja) | 2017-11-22 |
Family
ID=46208008
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014517551A Active JP6236000B2 (ja) | 2011-07-08 | 2012-05-30 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
| JP2017208377A Active JP6637943B2 (ja) | 2011-07-08 | 2017-10-27 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017208377A Active JP6637943B2 (ja) | 2011-07-08 | 2017-10-27 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9261784B2 (OSRAM) |
| EP (1) | EP2729844B1 (OSRAM) |
| JP (2) | JP6236000B2 (OSRAM) |
| KR (2) | KR101909567B1 (OSRAM) |
| CN (2) | CN108594599B (OSRAM) |
| TW (1) | TWI631423B (OSRAM) |
| WO (1) | WO2013007442A1 (OSRAM) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| US9632411B2 (en) * | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| JP6218192B2 (ja) * | 2013-09-26 | 2017-10-25 | 国立研究開発法人物質・材料研究機構 | 高感度積層レジスト膜及びレジスト膜の感光度向上方法 |
| TWI639179B (zh) | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| JP6283120B2 (ja) | 2014-02-24 | 2018-02-21 | 東京エレクトロン株式会社 | 光増感化学増幅レジスト内の光増感剤濃度の測定メトロロジー |
| TWI575566B (zh) * | 2014-02-24 | 2017-03-21 | 東京威力科創股份有限公司 | 與光敏化化學放大光阻化學品及程序一起使用的方法及技術 |
| JP6524388B2 (ja) | 2014-02-24 | 2019-06-05 | 東京エレクトロン株式会社 | 光増感化学増幅レジストで酸ショットノイズとして複製されるｅｕｖショットノイズの軽減 |
| JP6895600B2 (ja) | 2014-02-25 | 2021-06-30 | 東京エレクトロン株式会社 | 現像可能な底部反射防止コーティングおよび着色インプラントレジストのための化学増幅方法および技術 |
| FR3023843B1 (fr) * | 2014-07-21 | 2016-07-22 | Michelin & Cie | Polymere modifie le long de la chaine et son procede de synthese |
| JP6427684B2 (ja) * | 2015-09-30 | 2018-11-21 | 富士フイルム株式会社 | レジスト組成物、並びに、これを用いたレジスト膜、パターン形成方法及び電子デバイスの製造方法 |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| US10048594B2 (en) * | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| WO2017197288A1 (en) | 2016-05-13 | 2017-11-16 | Tokyo Electron Limited | Critical dimension control by use of a photo agent |
| TWI657314B (zh) | 2016-05-13 | 2019-04-21 | 東京威力科創股份有限公司 | 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制 |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US11092890B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
| US11092889B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
| KR102307977B1 (ko) | 2018-07-31 | 2021-09-30 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| WO2020176181A1 (en) | 2019-02-25 | 2020-09-03 | Applied Materials, Inc. | A film stack for lithography applications |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| WO2021034567A1 (en) | 2019-08-16 | 2021-02-25 | Tokyo Electron Limited | Method and process for stochastic driven defectivity healing |
| KR102446362B1 (ko) | 2019-10-15 | 2022-09-21 | 삼성에스디아이 주식회사 | 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| WO2021089270A1 (en) * | 2019-11-07 | 2021-05-14 | Asml Netherlands B.V. | Methods for improving uniformity in substrates in a lithographic process |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| WO2021173557A1 (en) | 2020-02-28 | 2021-09-02 | Lam Research Corporation | Multi-layer hardmask for defect reduction in euv patterning |
| TWI876020B (zh) | 2020-04-03 | 2025-03-11 | 美商蘭姆研究公司 | 處理光阻的方法、以及用於沉積薄膜的設備 |
| US12159787B2 (en) * | 2020-07-02 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| US12222643B2 (en) | 2020-07-02 | 2025-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| WO2022016124A1 (en) * | 2020-07-17 | 2022-01-20 | Lam Research Corporation | Photoresists containing tantalum |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| KR20230162611A (ko) * | 2021-03-26 | 2023-11-28 | 제이에스알 가부시끼가이샤 | 반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물 |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5837980B2 (ja) | 1975-12-30 | 1983-08-19 | 富士通株式会社 | フオトエツチングホウホウ |
| JP2516207B2 (ja) * | 1987-03-05 | 1996-07-24 | 株式会社日立製作所 | 放射線感応性材料 |
| US5061599A (en) * | 1986-06-11 | 1991-10-29 | Hitachi, Ltd. | Radiation sensitive materials |
| US5178989A (en) | 1989-07-21 | 1993-01-12 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
| DE69125634T2 (de) * | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
| JPH0422957A (ja) * | 1990-05-17 | 1992-01-27 | Fujitsu Ltd | 電離放射線感光材料とパターン形成方法 |
| JPH04107562A (ja) * | 1990-08-29 | 1992-04-09 | Fujitsu Ltd | 有機ケイ素重合体およびレジスト組成物 |
| JPH05117392A (ja) * | 1991-10-30 | 1993-05-14 | Fujitsu Ltd | 有機ケイ素重合体およびレジスト組成物 |
| JP2953252B2 (ja) * | 1993-01-19 | 1999-09-27 | 信越化学工業株式会社 | レジスト材料 |
| US5352564A (en) * | 1993-01-19 | 1994-10-04 | Shin-Etsu Chemical Co., Ltd. | Resist compositions |
| JPH0792683A (ja) * | 1993-09-22 | 1995-04-07 | Hitachi Ltd | 放射線感光材料 |
| US5534312A (en) * | 1994-11-14 | 1996-07-09 | Simon Fraser University | Method for directly depositing metal containing patterned films |
| JP3180629B2 (ja) * | 1994-12-09 | 2001-06-25 | 三菱マテリアル株式会社 | 金属酸化物薄膜パターン形成用組成物及びその製造方法、金属酸化物薄膜パターンの形成方法並びに電子部品及び光学部品の製造方法 |
| FR2759360B1 (fr) * | 1997-02-10 | 1999-03-05 | Commissariat Energie Atomique | Materiau polymerique inorganique a base d'oxyde de tantale notamment a indice de refraction eleve, mecaniquement resistant a l'abrasion, son procede de fabrication et materiau optique comprenant ce materiau |
| TW574629B (en) * | 1997-02-28 | 2004-02-01 | Shinetsu Chemical Co | Polystyrene derivative chemically amplified positive resist compositions, and patterning method |
| US6331378B1 (en) | 1998-02-25 | 2001-12-18 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method |
| JP3299214B2 (ja) | 1999-03-12 | 2002-07-08 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
| JP2001051418A (ja) * | 1999-08-05 | 2001-02-23 | Canon Inc | 感光性樹脂及び該感光性樹脂を用いたレジスト組成物、並びに該レジスト組成物を用いた半導体装置・露光用マスクの製造方法及び該方法により製造された半導体装置・露光用マスク |
| US6849305B2 (en) * | 2000-04-28 | 2005-02-01 | Ekc Technology, Inc. | Photolytic conversion process to form patterned amorphous film |
| ATE305626T1 (de) * | 2001-02-05 | 2005-10-15 | Quantiscript Inc | Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie |
| US7008749B2 (en) * | 2001-03-12 | 2006-03-07 | The University Of North Carolina At Charlotte | High resolution resists for next generation lithographies |
| KR20030076225A (ko) | 2001-04-04 | 2003-09-26 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 |
| JP4055543B2 (ja) * | 2002-02-22 | 2008-03-05 | ソニー株式会社 | レジスト材料及び微細加工方法 |
| US7326514B2 (en) | 2003-03-12 | 2008-02-05 | Cornell Research Foundation, Inc. | Organoelement resists for EUV lithography and methods of making the same |
| SG115693A1 (en) * | 2003-05-21 | 2005-10-28 | Asml Netherlands Bv | Method for coating a substrate for euv lithography and substrate with photoresist layer |
| JP2004354417A (ja) * | 2003-05-27 | 2004-12-16 | Shin Etsu Chem Co Ltd | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
| US20060024589A1 (en) * | 2004-07-28 | 2006-02-02 | Siegfried Schwarzl | Passivation of multi-layer mirror for extreme ultraviolet lithography |
| JP4595688B2 (ja) | 2005-06-10 | 2010-12-08 | ソニー株式会社 | レジスト材料の製造方法およびレジスト材料ならびに露光方法 |
| JP2007086268A (ja) * | 2005-09-21 | 2007-04-05 | Toray Ind Inc | 感光性シート |
| TW200736834A (en) * | 2005-12-27 | 2007-10-01 | Kansai Paint Co Ltd | Active energy ray-curable resin composition and method for forming resist pattern |
| CN101374650A (zh) * | 2006-01-30 | 2009-02-25 | 佳能株式会社 | 制备多层光记录介质的方法和压模以及制造该压模的方法 |
| KR100787450B1 (ko) * | 2006-06-20 | 2007-12-26 | 삼성에스디아이 주식회사 | 감광성 페이스트 조성물 이를 이용하여 제조된 플라즈마디스플레이 패널의 격벽 및 이를 포함하는 플라즈마디스플레이 패널 |
| JP2008256838A (ja) * | 2007-04-03 | 2008-10-23 | Canon Inc | レチクル及びレチクルの製造方法 |
| US7914970B2 (en) * | 2007-10-04 | 2011-03-29 | International Business Machines Corporation | Mixed lithography with dual resist and a single pattern transfer |
| JP5407941B2 (ja) * | 2009-03-09 | 2014-02-05 | 信越化学工業株式会社 | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
| US20100255427A1 (en) * | 2009-04-02 | 2010-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conformal photo-sensitive layer and process |
| JP5698922B2 (ja) * | 2009-06-26 | 2015-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 電子デバイスを形成する方法 |
| JP5708522B2 (ja) * | 2011-02-15 | 2015-04-30 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
-
2012
- 2012-05-30 KR KR1020147003284A patent/KR101909567B1/ko active Active
- 2012-05-30 US US14/131,141 patent/US9261784B2/en active Active
- 2012-05-30 WO PCT/EP2012/060133 patent/WO2013007442A1/en not_active Ceased
- 2012-05-30 KR KR1020187024586A patent/KR102009869B1/ko active Active
- 2012-05-30 JP JP2014517551A patent/JP6236000B2/ja active Active
- 2012-05-30 CN CN201810445598.3A patent/CN108594599B/zh active Active
- 2012-05-30 CN CN201280033742.3A patent/CN103649830B/zh active Active
- 2012-05-30 EP EP12725373.0A patent/EP2729844B1/en active Active
- 2012-06-18 TW TW101121798A patent/TWI631423B/zh active
-
2017
- 2017-10-27 JP JP2017208377A patent/JP6637943B2/ja active Active
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