ATE305626T1 - Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie - Google Patents

Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie

Info

Publication number
ATE305626T1
ATE305626T1 AT01903545T AT01903545T ATE305626T1 AT E305626 T1 ATE305626 T1 AT E305626T1 AT 01903545 T AT01903545 T AT 01903545T AT 01903545 T AT01903545 T AT 01903545T AT E305626 T1 ATE305626 T1 AT E305626T1
Authority
AT
Austria
Prior art keywords
ray
structures
metal
euv
etch
Prior art date
Application number
AT01903545T
Other languages
English (en)
Inventor
Dominique Drouin
Eric Lavallee
Jacques Beauvais
Original Assignee
Quantiscript Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantiscript Inc filed Critical Quantiscript Inc
Application granted granted Critical
Publication of ATE305626T1 publication Critical patent/ATE305626T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
AT01903545T 2001-02-05 2001-02-05 Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie ATE305626T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CA2001/000129 WO2002063394A1 (en) 2001-02-05 2001-02-05 Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography

Publications (1)

Publication Number Publication Date
ATE305626T1 true ATE305626T1 (de) 2005-10-15

Family

ID=4143124

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01903545T ATE305626T1 (de) 2001-02-05 2001-02-05 Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie

Country Status (8)

Country Link
US (1) US6897140B2 (de)
EP (1) EP1360552B1 (de)
JP (1) JP2004525506A (de)
KR (1) KR20040030501A (de)
AT (1) ATE305626T1 (de)
CA (1) CA2433076A1 (de)
DE (1) DE60113727D1 (de)
WO (1) WO2002063394A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7727547B2 (en) * 2000-04-04 2010-06-01 Tissuemed Limited Tissue-adhesive formulations
US6642158B1 (en) * 2002-09-23 2003-11-04 Intel Corporation Photo-thermal induced diffusion
JP3878997B2 (ja) * 2003-02-20 2007-02-07 国立大学法人名古屋大学 細線構造の作製方法、多層膜構造体、及び多層膜中間構造体
US20050150758A1 (en) * 2004-01-09 2005-07-14 Yakshin Andrey E. Processes and device for the deposition of films on substrates
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
FR2894690B1 (fr) * 2005-12-13 2008-02-15 Commissariat Energie Atomique Masque de lithographie en reflexion et procede de fabrication du masque
KR101909567B1 (ko) * 2011-07-08 2018-10-18 에이에스엠엘 네델란즈 비.브이. 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트
CN113376960A (zh) * 2020-05-22 2021-09-10 台湾积体电路制造股份有限公司 制造半导体器件的方法和图案形成方法
US20240027891A1 (en) * 2020-12-25 2024-01-25 Hoya Corporation Reflective mask blank, reflective mask, and method for manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157249A (en) * 1981-03-23 1982-09-28 Nec Corp Preparation of optical exposure mask
JPS6255928A (ja) 1985-09-05 1987-03-11 Fujitsu Ltd 半導体装置の製造方法
CA2197400C (en) * 1997-02-12 2004-08-24 Universite De Sherbrooke Fabrication of sub-micron silicide structures on silicon using resistless electron beam lithography
US6261938B1 (en) * 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
CA2287671A1 (en) * 1999-10-27 2001-04-27 Jacques Beauvais Method for using sub-micron silicide structures formed by direct-write electron beam lithography for fabricating masks for extreme ultra-violet and deep ultra-violet lithography

Also Published As

Publication number Publication date
DE60113727D1 (de) 2006-02-09
US6897140B2 (en) 2005-05-24
US20040115960A1 (en) 2004-06-17
EP1360552A1 (de) 2003-11-12
EP1360552B1 (de) 2005-09-28
WO2002063394A1 (en) 2002-08-15
JP2004525506A (ja) 2004-08-19
KR20040030501A (ko) 2004-04-09
CA2433076A1 (en) 2002-08-15

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