DE60113727D1 - Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie - Google Patents

Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie

Info

Publication number
DE60113727D1
DE60113727D1 DE60113727T DE60113727T DE60113727D1 DE 60113727 D1 DE60113727 D1 DE 60113727D1 DE 60113727 T DE60113727 T DE 60113727T DE 60113727 T DE60113727 T DE 60113727T DE 60113727 D1 DE60113727 D1 DE 60113727D1
Authority
DE
Germany
Prior art keywords
structures
metal
euv
ray
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60113727T
Other languages
English (en)
Inventor
Dominique Drouin
Eric Lavallee
Jacques Beauvais
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantiscript Inc
Original Assignee
Quantiscript Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantiscript Inc filed Critical Quantiscript Inc
Application granted granted Critical
Publication of DE60113727D1 publication Critical patent/DE60113727D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
DE60113727T 2001-02-05 2001-02-05 Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie Expired - Lifetime DE60113727D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CA2001/000129 WO2002063394A1 (en) 2001-02-05 2001-02-05 Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography

Publications (1)

Publication Number Publication Date
DE60113727D1 true DE60113727D1 (de) 2006-02-09

Family

ID=4143124

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60113727T Expired - Lifetime DE60113727D1 (de) 2001-02-05 2001-02-05 Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie

Country Status (8)

Country Link
US (1) US6897140B2 (de)
EP (1) EP1360552B1 (de)
JP (1) JP2004525506A (de)
KR (1) KR20040030501A (de)
AT (1) ATE305626T1 (de)
CA (1) CA2433076A1 (de)
DE (1) DE60113727D1 (de)
WO (1) WO2002063394A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642158B1 (en) 2002-09-23 2003-11-04 Intel Corporation Photo-thermal induced diffusion
JP3878997B2 (ja) * 2003-02-20 2007-02-07 国立大学法人名古屋大学 細線構造の作製方法、多層膜構造体、及び多層膜中間構造体
DE602004025217D1 (de) * 2003-04-04 2010-03-11 Tissuemed Ltd
US20050150758A1 (en) 2004-01-09 2005-07-14 Yakshin Andrey E. Processes and device for the deposition of films on substrates
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
FR2894690B1 (fr) 2005-12-13 2008-02-15 Commissariat Energie Atomique Masque de lithographie en reflexion et procede de fabrication du masque
WO2013007442A1 (en) * 2011-07-08 2013-01-17 Asml Netherlands B.V. Lithographic patterning process and resists to use therein
TWI781629B (zh) * 2020-05-22 2022-10-21 台灣積體電路製造股份有限公司 半導體裝置的製造方法
JPWO2022138360A1 (de) * 2020-12-25 2022-06-30

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157249A (en) 1981-03-23 1982-09-28 Nec Corp Preparation of optical exposure mask
JPS6255928A (ja) 1985-09-05 1987-03-11 Fujitsu Ltd 半導体装置の製造方法
CA2197400C (en) * 1997-02-12 2004-08-24 Universite De Sherbrooke Fabrication of sub-micron silicide structures on silicon using resistless electron beam lithography
US6261938B1 (en) * 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
CA2287671A1 (en) * 1999-10-27 2001-04-27 Jacques Beauvais Method for using sub-micron silicide structures formed by direct-write electron beam lithography for fabricating masks for extreme ultra-violet and deep ultra-violet lithography

Also Published As

Publication number Publication date
ATE305626T1 (de) 2005-10-15
EP1360552A1 (de) 2003-11-12
JP2004525506A (ja) 2004-08-19
US20040115960A1 (en) 2004-06-17
EP1360552B1 (de) 2005-09-28
WO2002063394A1 (en) 2002-08-15
US6897140B2 (en) 2005-05-24
KR20040030501A (ko) 2004-04-09
CA2433076A1 (en) 2002-08-15

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