JP2014220231A - 温度制御機能を備えるマルチプレナムシャワーヘッド - Google Patents

温度制御機能を備えるマルチプレナムシャワーヘッド Download PDF

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Publication number
JP2014220231A
JP2014220231A JP2014021856A JP2014021856A JP2014220231A JP 2014220231 A JP2014220231 A JP 2014220231A JP 2014021856 A JP2014021856 A JP 2014021856A JP 2014021856 A JP2014021856 A JP 2014021856A JP 2014220231 A JP2014220231 A JP 2014220231A
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Japan
Prior art keywords
plate
radical
showerhead
precursor delivery
radical passage
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Pending
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JP2014021856A
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English (en)
Japanese (ja)
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JP2014220231A5 (https=
Inventor
パトリック・ジー.・ブレイリング
G Breiling Patrick
バドリ・エヌ.・バラダラジャン
N Varadarajan Badri
ジェニファー・エル.・ペトラグリア
L Petraglia Jennifer
シュラベンジック バート・ジェイ.・バン
J Van Schravendijk Bart
シュラベンジック バート・ジェイ.・バン
カール・エフ.・リーサー
F Leeser Karl
マンディアム・アマンジー・スリラム
Ammanjee Sriram Mandyam
レイチェル・イー.・バッザー
E Batzer Rachel
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Novellus Systems Inc
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Novellus Systems Inc
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Application filed by Novellus Systems Inc filed Critical Novellus Systems Inc
Publication of JP2014220231A publication Critical patent/JP2014220231A/ja
Publication of JP2014220231A5 publication Critical patent/JP2014220231A5/ja
Pending legal-status Critical Current

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/02Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45574Nozzles for more than one gas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
JP2014021856A 2013-02-15 2014-02-07 温度制御機能を備えるマルチプレナムシャワーヘッド Pending JP2014220231A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361765432P 2013-02-15 2013-02-15
US61/765,432 2013-02-15
US201361770251P 2013-02-27 2013-02-27
US61/770,251 2013-02-27
US13/934,620 US20140235069A1 (en) 2013-02-15 2013-07-03 Multi-plenum showerhead with temperature control
US13/934,620 2013-07-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018087939A Division JP2018160462A (ja) 2013-02-15 2018-05-01 温度制御機能を備えるマルチプレナムシャワーヘッド

Publications (2)

Publication Number Publication Date
JP2014220231A true JP2014220231A (ja) 2014-11-20
JP2014220231A5 JP2014220231A5 (https=) 2017-06-01

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JP2014021856A Pending JP2014220231A (ja) 2013-02-15 2014-02-07 温度制御機能を備えるマルチプレナムシャワーヘッド
JP2018087939A Pending JP2018160462A (ja) 2013-02-15 2018-05-01 温度制御機能を備えるマルチプレナムシャワーヘッド

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Country Link
US (1) US20140235069A1 (https=)
JP (2) JP2014220231A (https=)
KR (1) KR20140103080A (https=)
SG (1) SG2014011712A (https=)
TW (2) TW201828361A (https=)

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JPWO2016063915A1 (ja) * 2014-10-24 2017-08-03 王子ホールディングス株式会社 光学素子、光学複合素子及び保護フィルム付光学複合素子
JP2018088465A (ja) * 2016-11-28 2018-06-07 東京エレクトロン株式会社 基板処理装置及び遮熱板
WO2019023429A3 (en) * 2017-07-28 2019-02-28 Lam Research Corporation MONOLITHIC CERAMIC GAS DISTRIBUTION PLATE
KR20190089210A (ko) * 2016-12-19 2019-07-30 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 빔 디바이스에 대한 가스 주입 시스템
JP2020502793A (ja) * 2016-12-14 2020-01-23 ラム リサーチ コーポレーションLam Research Corporation ラジカルおよび前駆体ガスを下流チャンバに供給して遠隔プラズマ膜蒸着を可能にするための温度制御を備えた統合シャワーヘッド
WO2020085128A1 (ja) * 2018-10-23 2020-04-30 東京エレクトロン株式会社 シャワーヘッドおよび基板処理装置
JP2020072126A (ja) * 2018-10-29 2020-05-07 スピードファム株式会社 局所ドライエッチング装置
CN112262228A (zh) * 2018-06-08 2021-01-22 应用材料公司 用于平板处理设备的温控气体扩散器
TWI728354B (zh) * 2014-10-17 2021-05-21 美商應用材料股份有限公司 用於電漿反應器的氣體分配板
JP2023529166A (ja) * 2020-06-06 2023-07-07 ラム リサーチ コーポレーション 半導体処理ツールのための着脱可能シャワーヘッドフェースプレート
JP2023544274A (ja) * 2020-09-28 2023-10-23 ラム リサーチ コーポレーション 真のラジカル処理のためのリモートプラズマアーキテクチャ
US12116669B2 (en) 2017-12-08 2024-10-15 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
KR101327458B1 (ko) * 2012-01-10 2013-11-08 주식회사 유진테크 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치
US9447499B2 (en) 2012-06-22 2016-09-20 Novellus Systems, Inc. Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US9255326B2 (en) 2013-03-12 2016-02-09 Novellus Systems, Inc. Systems and methods for remote plasma atomic layer deposition
KR102053350B1 (ko) * 2013-06-13 2019-12-06 삼성전자주식회사 저유전율 절연층을 가진 반도체 소자를 형성하는 방법
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
EP3061845B1 (en) 2015-02-03 2018-12-12 LG Electronics Inc. Metal organic chemical vapor deposition apparatus for solar cell
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
KR101670382B1 (ko) * 2015-03-10 2016-10-28 우범제 퍼지가스 분사 플레이트 및 그 제조 방법
JP6487747B2 (ja) * 2015-03-26 2019-03-20 株式会社Screenホールディングス 基板処理装置と処理ガス供給ノズル
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
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US11004661B2 (en) 2015-09-04 2021-05-11 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
JP6615544B2 (ja) * 2015-09-14 2019-12-04 株式会社東芝 流量調整装置及び処理装置
US10497542B2 (en) * 2016-01-04 2019-12-03 Daniel T. Mudd Flow control showerhead with integrated flow restrictors for improved gas delivery to a semiconductor process
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US10267728B2 (en) * 2016-09-28 2019-04-23 Lam Research Corporation Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system
US10954596B2 (en) * 2016-12-08 2021-03-23 Applied Materials, Inc. Temporal atomic layer deposition process chamber
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US11380557B2 (en) 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
DE202017105481U1 (de) * 2017-09-11 2018-12-12 Aixtron Se Gaseinlassorgan für einen CVD- oder PVD-Reaktor
KR102560283B1 (ko) * 2018-01-24 2023-07-26 삼성전자주식회사 샤워 헤드를 설계하고 제조하는 장치 및 방법
US10900124B2 (en) * 2018-06-12 2021-01-26 Lam Research Corporation Substrate processing chamber with showerhead having cooled faceplate
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US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
US11970775B2 (en) * 2018-08-10 2024-04-30 Applied Materials, Inc. Showerhead for providing multiple materials to a process chamber
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US11834743B2 (en) 2018-09-14 2023-12-05 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors
WO2020146047A1 (en) * 2019-01-08 2020-07-16 Applied Materials, Inc. Pumping apparatus and method for substrate processing chambers
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US12152302B2 (en) 2020-07-08 2024-11-26 Applied Materials, Inc. Multiple-channel showerhead design and methods in manufacturing
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USD1005445S1 (en) * 2021-06-03 2023-11-21 PTP Turbo Solutions, LLC Inlet shield
WO2023027915A1 (en) * 2021-08-25 2023-03-02 Applied Materials, Inc. Clamped dual-channel showerhead
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USD1071886S1 (en) * 2022-01-20 2025-04-22 Applied Materials, Inc. Substrate support for a substrate processing chamber
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WO2025212306A1 (en) * 2024-04-04 2025-10-09 Lam Research Corporation Gas distribution assembly for semiconductor processing chamber with aluminum nitride layer
USD1101709S1 (en) * 2024-04-12 2025-11-11 Applied Materials, Inc. Process chamber shower head

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05186292A (ja) * 1992-01-07 1993-07-27 Fujitsu Ltd 半導体成長装置およびそれによる半導体成長方法
JPH08239775A (ja) * 1994-10-26 1996-09-17 Applied Materials Inc プロセスガス流入及び散布の通路
JP2002030445A (ja) * 2000-06-15 2002-01-31 Hynix Semiconductor Inc Cecvd装備に用いられるシャワーヘッド
JP2002033311A (ja) * 2000-04-26 2002-01-31 Axcelis Technologies Inc プラズマ処理装置及びガス分散プレート
JP2006261217A (ja) * 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
JP2010084190A (ja) * 2008-09-30 2010-04-15 Sharp Corp 気相成長装置および気相成長方法
WO2011011532A2 (en) * 2009-07-22 2011-01-27 Applied Materials, Inc. Hollow cathode showerhead
WO2011044451A2 (en) * 2009-10-09 2011-04-14 Applied Materials, Inc. Multi-gas centrally cooled showerhead design

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4149051B2 (ja) * 1998-11-09 2008-09-10 東京エレクトロン株式会社 成膜装置
KR100731164B1 (ko) * 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20070016344A1 (en) * 2005-07-15 2007-01-18 Arinc, Incorporated Systems and methods for voice communications and control using adapted portable data storage and display devices
US7895970B2 (en) * 2005-09-29 2011-03-01 Tokyo Electron Limited Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component
JP2007191792A (ja) * 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
KR100752622B1 (ko) * 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
JP2008066413A (ja) * 2006-09-05 2008-03-21 Tokyo Electron Ltd シャワーヘッド構造及びこれを用いた処理装置
DE102011056589A1 (de) * 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05186292A (ja) * 1992-01-07 1993-07-27 Fujitsu Ltd 半導体成長装置およびそれによる半導体成長方法
JPH08239775A (ja) * 1994-10-26 1996-09-17 Applied Materials Inc プロセスガス流入及び散布の通路
JP2002033311A (ja) * 2000-04-26 2002-01-31 Axcelis Technologies Inc プラズマ処理装置及びガス分散プレート
JP2002030445A (ja) * 2000-06-15 2002-01-31 Hynix Semiconductor Inc Cecvd装備に用いられるシャワーヘッド
JP2006261217A (ja) * 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
JP2010084190A (ja) * 2008-09-30 2010-04-15 Sharp Corp 気相成長装置および気相成長方法
WO2011011532A2 (en) * 2009-07-22 2011-01-27 Applied Materials, Inc. Hollow cathode showerhead
WO2011044451A2 (en) * 2009-10-09 2011-04-14 Applied Materials, Inc. Multi-gas centrally cooled showerhead design

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728354B (zh) * 2014-10-17 2021-05-21 美商應用材料股份有限公司 用於電漿反應器的氣體分配板
JPWO2016063915A1 (ja) * 2014-10-24 2017-08-03 王子ホールディングス株式会社 光学素子、光学複合素子及び保護フィルム付光学複合素子
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US12000047B2 (en) 2016-12-14 2024-06-04 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
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JP2020502793A (ja) * 2016-12-14 2020-01-23 ラム リサーチ コーポレーションLam Research Corporation ラジカルおよび前駆体ガスを下流チャンバに供給して遠隔プラズマ膜蒸着を可能にするための温度制御を備えた統合シャワーヘッド
US12331402B2 (en) 2016-12-14 2025-06-17 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
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US11608559B2 (en) 2016-12-14 2023-03-21 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
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