JP2014220231A - 温度制御機能を備えるマルチプレナムシャワーヘッド - Google Patents
温度制御機能を備えるマルチプレナムシャワーヘッド Download PDFInfo
- Publication number
- JP2014220231A JP2014220231A JP2014021856A JP2014021856A JP2014220231A JP 2014220231 A JP2014220231 A JP 2014220231A JP 2014021856 A JP2014021856 A JP 2014021856A JP 2014021856 A JP2014021856 A JP 2014021856A JP 2014220231 A JP2014220231 A JP 2014220231A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- radical
- showerhead
- precursor delivery
- radical passage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
- Particle Accelerators (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361765432P | 2013-02-15 | 2013-02-15 | |
| US61/765,432 | 2013-02-15 | ||
| US201361770251P | 2013-02-27 | 2013-02-27 | |
| US61/770,251 | 2013-02-27 | ||
| US13/934,620 US20140235069A1 (en) | 2013-02-15 | 2013-07-03 | Multi-plenum showerhead with temperature control |
| US13/934,620 | 2013-07-03 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018087939A Division JP2018160462A (ja) | 2013-02-15 | 2018-05-01 | 温度制御機能を備えるマルチプレナムシャワーヘッド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014220231A true JP2014220231A (ja) | 2014-11-20 |
| JP2014220231A5 JP2014220231A5 (https=) | 2017-06-01 |
Family
ID=51351505
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014021856A Pending JP2014220231A (ja) | 2013-02-15 | 2014-02-07 | 温度制御機能を備えるマルチプレナムシャワーヘッド |
| JP2018087939A Pending JP2018160462A (ja) | 2013-02-15 | 2018-05-01 | 温度制御機能を備えるマルチプレナムシャワーヘッド |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018087939A Pending JP2018160462A (ja) | 2013-02-15 | 2018-05-01 | 温度制御機能を備えるマルチプレナムシャワーヘッド |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20140235069A1 (https=) |
| JP (2) | JP2014220231A (https=) |
| KR (1) | KR20140103080A (https=) |
| SG (1) | SG2014011712A (https=) |
| TW (2) | TW201828361A (https=) |
Cited By (12)
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| JPWO2016063915A1 (ja) * | 2014-10-24 | 2017-08-03 | 王子ホールディングス株式会社 | 光学素子、光学複合素子及び保護フィルム付光学複合素子 |
| JP2018088465A (ja) * | 2016-11-28 | 2018-06-07 | 東京エレクトロン株式会社 | 基板処理装置及び遮熱板 |
| WO2019023429A3 (en) * | 2017-07-28 | 2019-02-28 | Lam Research Corporation | MONOLITHIC CERAMIC GAS DISTRIBUTION PLATE |
| KR20190089210A (ko) * | 2016-12-19 | 2019-07-30 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 이온 빔 디바이스에 대한 가스 주입 시스템 |
| JP2020502793A (ja) * | 2016-12-14 | 2020-01-23 | ラム リサーチ コーポレーションLam Research Corporation | ラジカルおよび前駆体ガスを下流チャンバに供給して遠隔プラズマ膜蒸着を可能にするための温度制御を備えた統合シャワーヘッド |
| WO2020085128A1 (ja) * | 2018-10-23 | 2020-04-30 | 東京エレクトロン株式会社 | シャワーヘッドおよび基板処理装置 |
| JP2020072126A (ja) * | 2018-10-29 | 2020-05-07 | スピードファム株式会社 | 局所ドライエッチング装置 |
| CN112262228A (zh) * | 2018-06-08 | 2021-01-22 | 应用材料公司 | 用于平板处理设备的温控气体扩散器 |
| TWI728354B (zh) * | 2014-10-17 | 2021-05-21 | 美商應用材料股份有限公司 | 用於電漿反應器的氣體分配板 |
| JP2023529166A (ja) * | 2020-06-06 | 2023-07-07 | ラム リサーチ コーポレーション | 半導体処理ツールのための着脱可能シャワーヘッドフェースプレート |
| JP2023544274A (ja) * | 2020-09-28 | 2023-10-23 | ラム リサーチ コーポレーション | 真のラジカル処理のためのリモートプラズマアーキテクチャ |
| US12116669B2 (en) | 2017-12-08 | 2024-10-15 | Lam Research Corporation | Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
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| US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US9449859B2 (en) * | 2009-10-09 | 2016-09-20 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
| US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
| CN106884157B (zh) | 2011-03-04 | 2019-06-21 | 诺发系统公司 | 混合型陶瓷喷淋头 |
| KR101327458B1 (ko) * | 2012-01-10 | 2013-11-08 | 주식회사 유진테크 | 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치 |
| US9447499B2 (en) | 2012-06-22 | 2016-09-20 | Novellus Systems, Inc. | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery |
| US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
| US9121097B2 (en) | 2012-08-31 | 2015-09-01 | Novellus Systems, Inc. | Variable showerhead flow by varying internal baffle conductance |
| US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
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| US10825659B2 (en) * | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
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- 2014-02-10 SG SG2014011712A patent/SG2014011712A/en unknown
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- 2014-02-14 TW TW103104956A patent/TWI626685B/zh active
- 2014-02-14 KR KR20140017451A patent/KR20140103080A/ko not_active Withdrawn
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201448026A (zh) | 2014-12-16 |
| KR20140103080A (ko) | 2014-08-25 |
| TW201828361A (zh) | 2018-08-01 |
| US20140235069A1 (en) | 2014-08-21 |
| JP2018160462A (ja) | 2018-10-11 |
| TWI626685B (zh) | 2018-06-11 |
| SG2014011712A (en) | 2014-09-26 |
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