TW201828361A - 具有溫控之多充氣部噴淋頭 - Google Patents
具有溫控之多充氣部噴淋頭 Download PDFInfo
- Publication number
- TW201828361A TW201828361A TW107110096A TW107110096A TW201828361A TW 201828361 A TW201828361 A TW 201828361A TW 107110096 A TW107110096 A TW 107110096A TW 107110096 A TW107110096 A TW 107110096A TW 201828361 A TW201828361 A TW 201828361A
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- TW
- Taiwan
- Prior art keywords
- radical
- plate
- precursor
- diffusion plate
- gas
- Prior art date
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- 239000002243 precursor Substances 0.000 claims abstract description 171
- 238000012545 processing Methods 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 150000003254 radicals Chemical class 0.000 claims description 284
- 238000005273 aeration Methods 0.000 claims description 26
- 239000012530 fluid Substances 0.000 claims description 16
- 238000004891 communication Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 163
- 238000009792 diffusion process Methods 0.000 description 148
- 239000012212 insulator Substances 0.000 description 114
- 238000000034 method Methods 0.000 description 95
- 230000008569 process Effects 0.000 description 87
- 239000010410 layer Substances 0.000 description 71
- 210000002381 plasma Anatomy 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 49
- 239000000463 material Substances 0.000 description 34
- 239000002826 coolant Substances 0.000 description 33
- 238000001816 cooling Methods 0.000 description 27
- 238000009826 distribution Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 12
- 230000013011 mating Effects 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000012217 deletion Methods 0.000 description 6
- 230000037430 deletion Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000011112 process operation Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
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- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
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- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
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- 238000002271 resection Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
- Particle Accelerators (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361765432P | 2013-02-15 | 2013-02-15 | |
| US61/765,432 | 2013-02-15 | ||
| US201361770251P | 2013-02-27 | 2013-02-27 | |
| US61/770,251 | 2013-02-27 | ||
| US13/934,620 US20140235069A1 (en) | 2013-02-15 | 2013-07-03 | Multi-plenum showerhead with temperature control |
| US13/934,620 | 2013-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201828361A true TW201828361A (zh) | 2018-08-01 |
Family
ID=51351505
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107110096A TW201828361A (zh) | 2013-02-15 | 2014-02-14 | 具有溫控之多充氣部噴淋頭 |
| TW103104956A TWI626685B (zh) | 2013-02-15 | 2014-02-14 | 具有溫控之多充氣部噴淋頭 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103104956A TWI626685B (zh) | 2013-02-15 | 2014-02-14 | 具有溫控之多充氣部噴淋頭 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20140235069A1 (https=) |
| JP (2) | JP2014220231A (https=) |
| KR (1) | KR20140103080A (https=) |
| SG (1) | SG2014011712A (https=) |
| TW (2) | TW201828361A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI822023B (zh) * | 2021-05-31 | 2023-11-11 | 大陸商中微半導體設備（上海）股份有限公司 | 氣體噴淋頭及化學氣相沉積設備 |
| TWI910197B (zh) * | 2020-07-24 | 2026-01-01 | 美商蘭姆研究公司 | 用於半導體處理之設備 |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US9449859B2 (en) * | 2009-10-09 | 2016-09-20 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
| US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
| CN106884157B (zh) | 2011-03-04 | 2019-06-21 | 诺发系统公司 | 混合型陶瓷喷淋头 |
| KR101327458B1 (ko) * | 2012-01-10 | 2013-11-08 | 주식회사 유진테크 | 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치 |
| US9447499B2 (en) | 2012-06-22 | 2016-09-20 | Novellus Systems, Inc. | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery |
| US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
| US9121097B2 (en) | 2012-08-31 | 2015-09-01 | Novellus Systems, Inc. | Variable showerhead flow by varying internal baffle conductance |
| US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
| US9255326B2 (en) | 2013-03-12 | 2016-02-09 | Novellus Systems, Inc. | Systems and methods for remote plasma atomic layer deposition |
| KR102053350B1 (ko) * | 2013-06-13 | 2019-12-06 | 삼성전자주식회사 | 저유전율 절연층을 가진 반도체 소자를 형성하는 방법 |
| US9677176B2 (en) * | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
| US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US9905400B2 (en) | 2014-10-17 | 2018-02-27 | Applied Materials, Inc. | Plasma reactor with non-power-absorbing dielectric gas shower plate assembly |
| KR20170074883A (ko) * | 2014-10-24 | 2017-06-30 | 오지 홀딩스 가부시키가이샤 | 광학 소자, 광학 복합 소자 및 보호 필름이 부착된 광학 복합 소자 |
| EP3061845B1 (en) | 2015-02-03 | 2018-12-12 | LG Electronics Inc. | Metal organic chemical vapor deposition apparatus for solar cell |
| CN105986245A (zh) * | 2015-02-16 | 2016-10-05 | 中微半导体设备(上海)有限公司 | 改善mocvd反应工艺的部件及改善方法 |
| KR101670382B1 (ko) * | 2015-03-10 | 2016-10-28 | 우범제 | 퍼지가스 분사 플레이트 및 그 제조 방법 |
| JP6487747B2 (ja) * | 2015-03-26 | 2019-03-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置と処理ガス供給ノズル |
| US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| US12281385B2 (en) * | 2015-06-15 | 2025-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
| KR102417934B1 (ko) * | 2015-07-07 | 2022-07-07 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 장치 |
| US11004661B2 (en) | 2015-09-04 | 2021-05-11 | Applied Materials, Inc. | Process chamber for cyclic and selective material removal and etching |
| JP6615544B2 (ja) * | 2015-09-14 | 2019-12-04 | 株式会社東芝 | 流量調整装置及び処理装置 |
| US10497542B2 (en) * | 2016-01-04 | 2019-12-03 | Daniel T. Mudd | Flow control showerhead with integrated flow restrictors for improved gas delivery to a semiconductor process |
| US10825659B2 (en) * | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
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| US10267728B2 (en) * | 2016-09-28 | 2019-04-23 | Lam Research Corporation | Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system |
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| DE202017105481U1 (de) * | 2017-09-11 | 2018-12-12 | Aixtron Se | Gaseinlassorgan für einen CVD- oder PVD-Reaktor |
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| KR102560283B1 (ko) * | 2018-01-24 | 2023-07-26 | 삼성전자주식회사 | 샤워 헤드를 설계하고 제조하는 장치 및 방법 |
| KR102572740B1 (ko) * | 2018-06-08 | 2023-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 플랫 패널 프로세스 장비를 위한 온도 제어식 가스 확산기 |
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| KR102576220B1 (ko) * | 2018-06-22 | 2023-09-07 | 삼성디스플레이 주식회사 | 박막 처리 장치 및 박막 처리 방법 |
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-
2013
- 2013-07-03 US US13/934,620 patent/US20140235069A1/en not_active Abandoned
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2014
- 2014-02-07 JP JP2014021856A patent/JP2014220231A/ja active Pending
- 2014-02-10 SG SG2014011712A patent/SG2014011712A/en unknown
- 2014-02-14 TW TW107110096A patent/TW201828361A/zh unknown
- 2014-02-14 TW TW103104956A patent/TWI626685B/zh active
- 2014-02-14 KR KR20140017451A patent/KR20140103080A/ko not_active Withdrawn
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2018
- 2018-05-01 JP JP2018087939A patent/JP2018160462A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI910197B (zh) * | 2020-07-24 | 2026-01-01 | 美商蘭姆研究公司 | 用於半導體處理之設備 |
| TWI822023B (zh) * | 2021-05-31 | 2023-11-11 | 大陸商中微半導體設備（上海）股份有限公司 | 氣體噴淋頭及化學氣相沉積設備 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201448026A (zh) | 2014-12-16 |
| JP2014220231A (ja) | 2014-11-20 |
| KR20140103080A (ko) | 2014-08-25 |
| US20140235069A1 (en) | 2014-08-21 |
| JP2018160462A (ja) | 2018-10-11 |
| TWI626685B (zh) | 2018-06-11 |
| SG2014011712A (en) | 2014-09-26 |
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