KR20140103080A - 온도 제어를 구비한 다중 플레넘 샤워헤드 - Google Patents

온도 제어를 구비한 다중 플레넘 샤워헤드 Download PDF

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Publication number
KR20140103080A
KR20140103080A KR20140017451A KR20140017451A KR20140103080A KR 20140103080 A KR20140103080 A KR 20140103080A KR 20140017451 A KR20140017451 A KR 20140017451A KR 20140017451 A KR20140017451 A KR 20140017451A KR 20140103080 A KR20140103080 A KR 20140103080A
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South Korea
Prior art keywords
plate
radical
precursor
shower head
passage
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Withdrawn
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KR20140017451A
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English (en)
Korean (ko)
Inventor
패트릭 지. 브라이링
브하드리 엔. 바라다라잔
제니퍼 엘. 페트라글리아
슈라벤디크 바트 제이. 반
칼 에프. 리저
만디암 암만지 스리람
레이첼 이. 뱃저
Original Assignee
노벨러스 시스템즈, 인코포레이티드
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Publication of KR20140103080A publication Critical patent/KR20140103080A/ko
Withdrawn legal-status Critical Current

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
KR20140017451A 2013-02-15 2014-02-14 온도 제어를 구비한 다중 플레넘 샤워헤드 Withdrawn KR20140103080A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361765432P 2013-02-15 2013-02-15
US61/765,432 2013-02-15
US201361770251P 2013-02-27 2013-02-27
US61/770,251 2013-02-27
US13/934,620 US20140235069A1 (en) 2013-02-15 2013-07-03 Multi-plenum showerhead with temperature control
US13/934,620 2013-07-03

Publications (1)

Publication Number Publication Date
KR20140103080A true KR20140103080A (ko) 2014-08-25

Family

ID=51351505

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20140017451A Withdrawn KR20140103080A (ko) 2013-02-15 2014-02-14 온도 제어를 구비한 다중 플레넘 샤워헤드

Country Status (5)

Country Link
US (1) US20140235069A1 (https=)
JP (2) JP2014220231A (https=)
KR (1) KR20140103080A (https=)
SG (1) SG2014011712A (https=)
TW (2) TW201828361A (https=)

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KR20170006214A (ko) * 2015-07-07 2017-01-17 에이에스엠 아이피 홀딩 비.브이. 박막 증착 장치
KR20170082989A (ko) * 2016-01-07 2017-07-17 램 리써치 코포레이션 복수의 가스 주입 지점들 및 듀얼 주입기를 포함한 기판 프로세싱 챔버
KR20190077632A (ko) * 2016-12-08 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 시간적 원자 층 증착 프로세싱 챔버
KR20190087608A (ko) * 2016-12-14 2019-07-24 램 리써치 코포레이션 리모트 플라즈마 막 증착을 인에이블하도록 다운스트림 챔버로 라디칼 및 전구체 가스를 전달하기 위한 열적 제어부와 통합된 샤워헤드
US10388820B2 (en) 2015-02-03 2019-08-20 Lg Electronics Inc. Metal organic chemical vapor deposition apparatus for solar cell
US20200087790A1 (en) * 2018-09-14 2020-03-19 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors
KR20210006019A (ko) * 2018-06-08 2021-01-15 어플라이드 머티어리얼스, 인코포레이티드 플랫 패널 프로세스 장비를 위한 온도 제어식 가스 확산기
KR20210030484A (ko) * 2018-08-06 2021-03-17 어플라이드 머티어리얼스, 인코포레이티드 내장형 히터를 가진 페이스 플레이트
US12116669B2 (en) 2017-12-08 2024-10-15 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
CN106884157B (zh) 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
KR101327458B1 (ko) * 2012-01-10 2013-11-08 주식회사 유진테크 냉각 방식의 샤워헤드 및 이를 구비하는 기판 처리 장치
US9447499B2 (en) 2012-06-22 2016-09-20 Novellus Systems, Inc. Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US9255326B2 (en) 2013-03-12 2016-02-09 Novellus Systems, Inc. Systems and methods for remote plasma atomic layer deposition
KR102053350B1 (ko) * 2013-06-13 2019-12-06 삼성전자주식회사 저유전율 절연층을 가진 반도체 소자를 형성하는 방법
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US9905400B2 (en) 2014-10-17 2018-02-27 Applied Materials, Inc. Plasma reactor with non-power-absorbing dielectric gas shower plate assembly
KR20170074883A (ko) * 2014-10-24 2017-06-30 오지 홀딩스 가부시키가이샤 광학 소자, 광학 복합 소자 및 보호 필름이 부착된 광학 복합 소자
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
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JP6487747B2 (ja) * 2015-03-26 2019-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置と処理ガス供給ノズル
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
US11004661B2 (en) 2015-09-04 2021-05-11 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
JP6615544B2 (ja) * 2015-09-14 2019-12-04 株式会社東芝 流量調整装置及び処理装置
US10497542B2 (en) * 2016-01-04 2019-12-03 Daniel T. Mudd Flow control showerhead with integrated flow restrictors for improved gas delivery to a semiconductor process
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US10267728B2 (en) * 2016-09-28 2019-04-23 Lam Research Corporation Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system
JP6764771B2 (ja) * 2016-11-28 2020-10-07 東京エレクトロン株式会社 基板処理装置及び遮熱板
US9865433B1 (en) * 2016-12-19 2018-01-09 Varian Semiconductor Equipment Associats, Inc. Gas injection system for ion beam device
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US11380557B2 (en) 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
US20190032211A1 (en) * 2017-07-28 2019-01-31 Lam Research Corporation Monolithic ceramic gas distribution plate
DE202017105481U1 (de) * 2017-09-11 2018-12-12 Aixtron Se Gaseinlassorgan für einen CVD- oder PVD-Reaktor
KR102560283B1 (ko) * 2018-01-24 2023-07-26 삼성전자주식회사 샤워 헤드를 설계하고 제조하는 장치 및 방법
US10900124B2 (en) * 2018-06-12 2021-01-26 Lam Research Corporation Substrate processing chamber with showerhead having cooled faceplate
KR102576220B1 (ko) * 2018-06-22 2023-09-07 삼성디스플레이 주식회사 박막 처리 장치 및 박막 처리 방법
US11970775B2 (en) * 2018-08-10 2024-04-30 Applied Materials, Inc. Showerhead for providing multiple materials to a process chamber
CN112673456B (zh) * 2018-09-10 2025-05-13 朗姆研究公司 使用亚稳的活化自由基物质的原子层处理工艺
JP2020068247A (ja) * 2018-10-23 2020-04-30 東京エレクトロン株式会社 シャワーヘッドおよび基板処理装置
JP7104973B2 (ja) * 2018-10-29 2022-07-22 スピードファム株式会社 局所ドライエッチング装置
WO2020146047A1 (en) * 2019-01-08 2020-07-16 Applied Materials, Inc. Pumping apparatus and method for substrate processing chambers
KR20200109620A (ko) * 2019-03-13 2020-09-23 (주)포인트엔지니어링 접합부품
KR102935543B1 (ko) 2019-07-17 2026-03-05 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
US12359313B2 (en) * 2019-07-31 2025-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition apparatus and method of forming metal oxide layer using the same
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
CN112713074B (zh) * 2019-10-25 2023-03-07 中微半导体设备(上海)股份有限公司 气体喷淋头组件及等离子体处理设备
CN115867999A (zh) * 2020-06-06 2023-03-28 朗姆研究公司 用于半导体处理的可移除喷头面板
US12152302B2 (en) 2020-07-08 2024-11-26 Applied Materials, Inc. Multiple-channel showerhead design and methods in manufacturing
WO2022020639A1 (en) * 2020-07-24 2022-01-27 Lam Research Corporation Showerhead with reduced interior volumes
USD948658S1 (en) * 2020-08-03 2022-04-12 Lam Research Corporation High density hole pattern dual plenum hole showerhead assembly
CN115720681A (zh) * 2020-09-28 2023-02-28 朗姆研究公司 真实自由基处理的远程等离子体架构
CN115478261B (zh) * 2021-05-31 2025-02-14 中微半导体设备(上海)股份有限公司 一种气体喷淋头及化学气相沉积设备
USD1005445S1 (en) * 2021-06-03 2023-11-21 PTP Turbo Solutions, LLC Inlet shield
WO2023027915A1 (en) * 2021-08-25 2023-03-02 Applied Materials, Inc. Clamped dual-channel showerhead
USD1038900S1 (en) 2021-09-30 2024-08-13 Lam Research Corporation Showerhead for semiconductor processing
JP2024539698A (ja) * 2021-10-29 2024-10-29 ラム リサーチ コーポレーション ラジカル種供給のための穴サイズを有するシャワーヘッド
USD1071886S1 (en) * 2022-01-20 2025-04-22 Applied Materials, Inc. Substrate support for a substrate processing chamber
KR20240008701A (ko) * 2022-07-12 2024-01-19 삼성전자주식회사 충격 흡수 플레이트 및 이를 포함하는 기판 처리 장치
WO2024091420A1 (en) * 2022-10-24 2024-05-02 Lam Research Corporation Showerhead with three plenums
CN115404463B (zh) * 2022-10-31 2023-03-24 上海星原驰半导体有限公司 原子层沉积设备及原子层沉积喷淋装置
WO2025064514A1 (en) * 2023-09-22 2025-03-27 Lam Research Corporation Showerhead having components removably coupled to one another
USD1105018S1 (en) * 2024-02-12 2025-12-09 Lam Research Corporation Shower head
WO2025212306A1 (en) * 2024-04-04 2025-10-09 Lam Research Corporation Gas distribution assembly for semiconductor processing chamber with aluminum nitride layer
USD1101709S1 (en) * 2024-04-12 2025-11-11 Applied Materials, Inc. Process chamber shower head

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3156326B2 (ja) * 1992-01-07 2001-04-16 富士通株式会社 半導体成長装置およびそれによる半導体成長方法
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
JP4149051B2 (ja) * 1998-11-09 2008-09-10 東京エレクトロン株式会社 成膜装置
US6635117B1 (en) * 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
KR100406174B1 (ko) * 2000-06-15 2003-11-19 주식회사 하이닉스반도체 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
JP2006261217A (ja) * 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
KR100731164B1 (ko) * 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20070016344A1 (en) * 2005-07-15 2007-01-18 Arinc, Incorporated Systems and methods for voice communications and control using adapted portable data storage and display devices
US7895970B2 (en) * 2005-09-29 2011-03-01 Tokyo Electron Limited Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component
JP2007191792A (ja) * 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
KR100752622B1 (ko) * 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
JP2008066413A (ja) * 2006-09-05 2008-03-21 Tokyo Electron Ltd シャワーヘッド構造及びこれを用いた処理装置
JP2010084190A (ja) * 2008-09-30 2010-04-15 Sharp Corp 気相成長装置および気相成長方法
WO2011011532A2 (en) * 2009-07-22 2011-01-27 Applied Materials, Inc. Hollow cathode showerhead
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
DE102011056589A1 (de) * 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388820B2 (en) 2015-02-03 2019-08-20 Lg Electronics Inc. Metal organic chemical vapor deposition apparatus for solar cell
KR20170006214A (ko) * 2015-07-07 2017-01-17 에이에스엠 아이피 홀딩 비.브이. 박막 증착 장치
KR20170082989A (ko) * 2016-01-07 2017-07-17 램 리써치 코포레이션 복수의 가스 주입 지점들 및 듀얼 주입기를 포함한 기판 프로세싱 챔버
KR20190077632A (ko) * 2016-12-08 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 시간적 원자 층 증착 프로세싱 챔버
US12000047B2 (en) 2016-12-14 2024-06-04 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR20190087608A (ko) * 2016-12-14 2019-07-24 램 리써치 코포레이션 리모트 플라즈마 막 증착을 인에이블하도록 다운스트림 챔버로 라디칼 및 전구체 가스를 전달하기 위한 열적 제어부와 통합된 샤워헤드
US12331402B2 (en) 2016-12-14 2025-06-17 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US11608559B2 (en) 2016-12-14 2023-03-21 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR20240118202A (ko) * 2016-12-14 2024-08-02 램 리써치 코포레이션 리모트 플라즈마 막 증착을 인에이블하도록 다운스트림 챔버로 라디칼 및 전구체 가스를 전달하기 위한 열적 제어부와 통합된 샤워헤드
US12116669B2 (en) 2017-12-08 2024-10-15 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR20210006019A (ko) * 2018-06-08 2021-01-15 어플라이드 머티어리얼스, 인코포레이티드 플랫 패널 프로세스 장비를 위한 온도 제어식 가스 확산기
KR20210030484A (ko) * 2018-08-06 2021-03-17 어플라이드 머티어리얼스, 인코포레이티드 내장형 히터를 가진 페이스 플레이트
US12043895B2 (en) 2018-09-14 2024-07-23 Applied Materials, Inc. Methods of using a segmented showerhead for uniform delivery of multiple pre-cursors
US11834743B2 (en) * 2018-09-14 2023-12-05 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors
US20200087790A1 (en) * 2018-09-14 2020-03-19 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors

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US20140235069A1 (en) 2014-08-21
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SG2014011712A (en) 2014-09-26

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