JP2014093339A - 実装方法 - Google Patents
実装方法 Download PDFInfo
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- JP2014093339A JP2014093339A JP2012241595A JP2012241595A JP2014093339A JP 2014093339 A JP2014093339 A JP 2014093339A JP 2012241595 A JP2012241595 A JP 2012241595A JP 2012241595 A JP2012241595 A JP 2012241595A JP 2014093339 A JP2014093339 A JP 2014093339A
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- bonding
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 230000004913 activation Effects 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000002203 pretreatment Methods 0.000 claims description 2
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 abstract description 21
- 230000002542 deteriorative effect Effects 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 description 26
- 239000010931 gold Substances 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
- H01L2224/13018—Shape in side view comprising protrusions or indentations
- H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1401—Structure
- H01L2224/1403—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】実装基板101の実装面と素子102の実装面とを向き合わせ、バンプ103の接合面103aと電極パッド113の接合面113aとが対向し、バンプ104の接合面104aと電極パッド114の接合面114aとが対向する状態とし、次いで、バンプ103の接合面103aと電極パッド113の接合面113aとを突き合わせ、バンプ104の接合面104aと電極パッド114の接合面114aとを突き合わせ、この状態で、実装基板101と素子102との間に荷重を加え、また150℃程度に加熱する。
【選択図】 図2H
Description
Claims (3)
- 化合物半導体からなる素子の表面に形成された配線に接続するバンプを形成する工程と、
前記素子が実装される実装基板の表面に形成された配線に電極パッドを形成する工程と、
前記電極パッドに接合させる前記バンプの接合面を凹凸形状にする工程と、
前記バンプの接合面と前記電極パッドの接合面とを表面活性化接合により接合する工程と
を少なくとも備え、
前記バンプと前記電極パッドとは同じ金属から構成することを特徴とする実装方法。 - 請求項1記載の実装方法において、
前記電極パッドに接合させる前記接合面を凹凸形状にした前記バンプを、表面活性化接合により接合する前に熱処理をすることで軟化させる前処理を行う工程を備えることを特徴とする実装方法。 - 請求項1または2記載の実装方法において、
前記バンプの接合面および前記電極パッドの接合面にアルゴンビームを照射することにより前記表面活性化接合を行うことを特徴とする実装方法。
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JP2012241595A JP6100503B2 (ja) | 2012-11-01 | 2012-11-01 | 実装方法 |
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JP2012241595A JP6100503B2 (ja) | 2012-11-01 | 2012-11-01 | 実装方法 |
Publications (2)
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JP2014093339A true JP2014093339A (ja) | 2014-05-19 |
JP6100503B2 JP6100503B2 (ja) | 2017-03-22 |
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JP2012241595A Expired - Fee Related JP6100503B2 (ja) | 2012-11-01 | 2012-11-01 | 実装方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180026613A (ko) * | 2016-09-02 | 2018-03-13 | 삼성디스플레이 주식회사 | 반도체 칩, 이를 구비한 전자장치 및 반도체 칩의 연결방법 |
JP2020178017A (ja) * | 2019-04-17 | 2020-10-29 | 日亜化学工業株式会社 | 実装方法 |
WO2022209978A1 (ja) * | 2021-03-30 | 2022-10-06 | 三井金属鉱業株式会社 | 多層基板の製造方法及び配線基板 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0323928U (ja) * | 1989-07-19 | 1991-03-12 | ||
JPH04340732A (ja) * | 1991-05-17 | 1992-11-27 | Toshiba Corp | 実装回路装置 |
JP2002093946A (ja) * | 2000-09-19 | 2002-03-29 | Hitachi Ltd | 半導体装置及び半導体装置の実装構造体 |
WO2005097396A1 (ja) * | 2004-04-08 | 2005-10-20 | Matsushita Electric Industrial Co., Ltd. | 接合方法及びその装置 |
JP2006032791A (ja) * | 2004-07-20 | 2006-02-02 | Matsushita Electric Works Ltd | 実装方法 |
JP2006344672A (ja) * | 2005-06-07 | 2006-12-21 | Fujitsu Ltd | 半導体チップとそれを用いた半導体装置 |
JP2011109002A (ja) * | 2009-11-20 | 2011-06-02 | Citizen Holdings Co Ltd | 集積デバイスおよび集積デバイスの製造方法 |
JP2011114133A (ja) * | 2009-11-26 | 2011-06-09 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
-
2012
- 2012-11-01 JP JP2012241595A patent/JP6100503B2/ja not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0323928U (ja) * | 1989-07-19 | 1991-03-12 | ||
JPH04340732A (ja) * | 1991-05-17 | 1992-11-27 | Toshiba Corp | 実装回路装置 |
JP2002093946A (ja) * | 2000-09-19 | 2002-03-29 | Hitachi Ltd | 半導体装置及び半導体装置の実装構造体 |
WO2005097396A1 (ja) * | 2004-04-08 | 2005-10-20 | Matsushita Electric Industrial Co., Ltd. | 接合方法及びその装置 |
JP2006032791A (ja) * | 2004-07-20 | 2006-02-02 | Matsushita Electric Works Ltd | 実装方法 |
JP2006344672A (ja) * | 2005-06-07 | 2006-12-21 | Fujitsu Ltd | 半導体チップとそれを用いた半導体装置 |
JP2011109002A (ja) * | 2009-11-20 | 2011-06-02 | Citizen Holdings Co Ltd | 集積デバイスおよび集積デバイスの製造方法 |
JP2011114133A (ja) * | 2009-11-26 | 2011-06-09 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180026613A (ko) * | 2016-09-02 | 2018-03-13 | 삼성디스플레이 주식회사 | 반도체 칩, 이를 구비한 전자장치 및 반도체 칩의 연결방법 |
KR102627991B1 (ko) * | 2016-09-02 | 2024-01-24 | 삼성디스플레이 주식회사 | 반도체 칩, 이를 구비한 전자장치 및 반도체 칩의 연결방법 |
JP2020178017A (ja) * | 2019-04-17 | 2020-10-29 | 日亜化学工業株式会社 | 実装方法 |
JP7189441B2 (ja) | 2019-04-17 | 2022-12-14 | 日亜化学工業株式会社 | 実装方法 |
WO2022209978A1 (ja) * | 2021-03-30 | 2022-10-06 | 三井金属鉱業株式会社 | 多層基板の製造方法及び配線基板 |
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JP6100503B2 (ja) | 2017-03-22 |
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