CN113395079B - Rf电路模块及其制造方法 - Google Patents
Rf电路模块及其制造方法 Download PDFInfo
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- CN113395079B CN113395079B CN202110264331.6A CN202110264331A CN113395079B CN 113395079 B CN113395079 B CN 113395079B CN 202110264331 A CN202110264331 A CN 202110264331A CN 113395079 B CN113395079 B CN 113395079B
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Abstract
本发明提供RF电路模块及其制造方法。构成能够提高散热性且能够小型化的RF电路模块。另外,构成抑制基于线材的电路的电特性的恶化且高频性能优异的RF电路模块。RF电路模块(113A)具备:模块基板(90);第一基材(10),构成第一电路;以及第二基材(20),构成第二电路。第一电路包括控制第二电路的动作的控制电路,第二电路包括放大RF信号的高频放大电路。第二基材(20)安装于第一基材(10),第一基材(10)以电路形成面对置的方式配置于模块基板(90)。第一基材(10)和第二基材(20)具有将第一电路和第二电路不经由模块基板(90)而电连接的电路间连接布线(32)。
Description
技术领域
本发明涉及RF电路模块,特别是涉及对高频电力进行处理的电路所使用且具有发热部的RF电路模块及其制造方法。
背景技术
以往,在移动体通信、卫星通信等电子设备中,组装有将高频信号的发送接收功能一体化的RF前端模块。通过将高频放大器、控制高频放大器的控制IC、开关IC、双工器等搭载于模块基板,并对整体进行树脂模制,来构成RF前端模块。
例如,上述高频放大器是形成于GaAs基板的MMIC(Monolithic MicrowaveIntegrated Circuit:单片微波集成电路),上述控制IC和开关IC是形成于Si基板的MMIC,单独地搭载于模块基板的表面。
另一方面,在专利文献1中公开如下的构造:为了将模块基板缩小化,在高频放大器层叠控制IC等,将高频放大器和控制IC等与模块基板上的电极线接合。
图25的(A)是与专利文献1所示的器件相同结构的器件的俯视图,图25的(B)是其剖视图。在该例中,在电路基板(LAMINATESUBSTRATE:层压基板)搭载有异质结双极晶体管的芯片(HBT DIE),在该芯片上搭载有硅芯片(Si DIE),异质结双极晶体管的芯片与电路基板之间、硅芯片与电路基板之间、硅芯片与异质结双极晶体管的芯片之间分别线接合。
专利文献1:美国专利申请公开第2015/0303971号说明书
在将高频放大器、控制IC、开关IC等单独地搭载于模块基板的表面的构造中,针对模块基板的这些部件的安装面积较大,将部件间连接的布线较长,信号损耗也较大。另外,高频放大器例如构成在GaAs基板上,因此高频放大器自身的散热性较低。
根据专利文献1所公开的构造,与占有面积比较大的将高频放大器、控制IC等并列设置的情况进行比较,能够将模块基板的尺寸缩小化。然而,需要用于线接合的空间,模块基板的缩小效果较小,而且由于在线材产生的寄生电感等的影响,特别是在高频区域中损耗变大,或者容易产生线路的阻抗不匹配。另外,从高频放大器产生的热的散热效果较低。
另一方面,伴随着高频放大器的近年来的更高速、高输出化的要求,其自身发热引起的特性界限成为课题。例如,在双极晶体管中,由于其集电极损耗而发热,双极晶体管自身升温,从而基极-发射极间饱和电压Vbe降低,由此集电极电流增大,Vbe进一步降低,若施加上述那样的正反馈,则会导致热失控,因此在能够控制的范围中所能处理的电力被限制。
因此,在构成RF电路模块的状态下,如果不能高效率地对高频放大器的热进行散热,则也不能实现RF电路模块的小型化。
发明内容
因此,本发明的目的在于提供一种不受散热性制约且小型化的RF电路模块、或者小型且散热性较高的RF电路模块、以及该RF电路模块的制造方法。另外,本发明的目的在于提供一种抑制基于线材的电路的电特性的恶化且高频性能优异的RF电路模块以及该RF电路模块的制造方法。
(1)作为本发明的一个方式的RF电路模块具备:模块基板,具有部件搭载用的电极;第一基材,构成第一电路;以及第二基材,构成第二电路,上述第一电路包括控制上述第二电路的动作的控制电路,上述第二电路包括放大RF信号的高频放大电路,上述第二基材安装于上述第一基材,上述第一基材倒装芯片接合于上述模块基板,上述第一基材和上述第二基材具有导体层,上述导体层构成将上述第一电路和上述第二电路不经由上述模块基板而电连接的电路间连接布线,上述第一基材具有与上述模块基板的上述电极连接的第一基材侧导体突起部,上述第二基材具有与上述模块基板的上述电极连接的第二基材侧导体突起部。
(2)作为本发明的一个方式的RF电路模块具备:模块基板,具有部件搭载用的电极;第一基材,构成第一电路;以及第二基材,构成第二电路,上述第一电路包括控制上述第二电路的动作的控制电路,上述第二电路包括放大RF信号的高频放大电路,上述第二基材安装于上述第一基材,上述第一基材和上述第二基材具有导体层,上述导体层构成将上述第一电路和上述第二电路不经由上述模块基板而电连接的电路间连接布线,在俯视上述模块基板时,构成上述电路间连接布线的导体层的上表面位于上述第二电路的上表面以下的位置。
(3)在作为本发明的一个方式的RF电路模块的制造方法中,上述RF电路模块具备:模块基板,具有部件搭载用的电极;第一基材,构成包括控制电路的第一电路;以及第二基材,构成包括由上述控制电路控制的高频放大电路的第二电路,其中,上述RF电路模块的制造方法具有:在作为上述第一基材的单体半导体基材形成上述第一电路和基材间连接导体的工序;经由剥离层在作为上述第二基材的化合物半导体基材形成具有上述第二电路和基材间连接导体的半导体薄膜的工序;通过蚀刻除去上述剥离层而将上述半导体薄膜从上述化合物半导体基材剥离来构成上述第二基材的工序;通过在上述第一基材的规定位置接合上述第二基材,来将上述第一基材的上述基材间连接导体和上述第二基材的上述基材间连接导体连接,并构成由上述第一基材和上述第二基材形成的层叠体的工序;形成与上述第一电路连接的第一基材侧导体突起部以及与上述第二电路连接的第二基材侧导体突起部的工序;以及通过将上述第一基材侧导体突起部和上述第二基材侧导体突起部与上述模块基板的上述电极连接,来将上述层叠体搭载于上述模块基板的工序。
(4)在作为本发明的一个方式的RF电路模块的制造方法中,上述RF电路模块具备:模块基板,具有部件搭载用的电极;第一基材,构成包括控制电路的第一电路;以及第二基材,构成包括由上述控制电路控制的高频放大电路的第二电路,其中,上述RF电路模块的制造方法具有:在作为上述第一基材的单体半导体基材形成上述第一电路的工序;经由剥离层在作为上述第二基材的化合物半导体基材形成具有上述第二电路的半导体薄膜的工序;通过蚀刻除去上述剥离层而将上述半导体薄膜从上述化合物半导体基材剥离来构成上述第二基材的工序;在上述第一基材的规定位置接合上述第二基材来构成由上述第一基材和上述第二基材形成的层叠体的工序;形成将上述第一电路和上述第二电路连接的基材间连接导体的工序;以及将上述层叠体搭载于上述模块基板的工序。
根据本发明,能够得到不受散热性制约且小型化的RF电路模块、或者小型且散热性较高的RF电路模块。另外,能够得到避免基于线材的电路的电特性的恶化且高频性能优异的RF电路模块。
附图说明
图1的(A)是第一实施方式的RF电路模块111的俯视图。图1的(B)是图1的(A)中的X-X部分处的剖视图。
图2的(A)、图2的(B)是表示RF电路模块111的制造工序的图。
图3是表示RF电路模块111中的、自形成于第二基材20的电路元件的散热路径即两个热传导路径的图。
图4是表示PA电路元件3的制造方法的图。
图5是表示第二基材20的制造方法以及第二基材20相对于第一基材10的接合方法的图,是各工序的立体图。
图6的(A)是第二实施方式的前端模块120的俯视图,图6的(B)是图6的(A)中的X-X部分处的剖视图。
图7是表示第二实施方式的前端模块120的电路结构的框图。
图8是第三实施方式的RF电路模块113A的局部剖视图。
图9是表示形成于第二基材20的HBT的结构的局部放大图。
图10是表示RF电路模块113A中的自电路元件21的散热路径即两个热传导路径的图。
图11是第三实施方式的其他的RF电路模块113B的局部剖视图。
图12是散热器HS的导通孔层处的横剖视图。
图13是表示RF电路模块113B中的自电路元件21的散热路径的图。
图14是第三实施方式的另一其他的RF电路模块113C的局部剖视图。
图15是第四实施方式的RF电路模块所具备的层叠体104A的剖视图。
图16是第四实施方式的其他的电路模块114B的剖视图。
图17是表示第四实施方式的PA电路元件等层叠体的制造方法的图。
图18是表示第四实施方式的前端模块120的电路结构的框图。
图19是表示第五实施方式的RF电路模块115的剖视图。
图20是第六实施方式的RF电路模块116A的概略主视图。
图21是第六实施方式的其他的RF电路模块116B的主视图。
图22是第七实施方式的RF电路模块117A的主视图。
图23是第七实施方式的其他的RF电路模块117B的主视图。
图24的(A)、图24的(B)是表示作为第二实施方式的前端模块的比较例的前端模块的结构的图。
图25的(A)是与专利文献1所示的器件相同结构的器件的俯视图,图25的(B)是其剖视图。
图26是表示作为第四实施方式的RF电路模块的比较例的RF电路模块的结构的图。
图27是表示作为第四实施方式的RF电路模块的其他的比较例的RF电路模块的结构的图。
附图标记说明:ANT…天线;HS…散热器;PB1…第一导体柱凸块;PB2…第二导体柱凸块;PM…P-MOS;NM…N-MOS;Si-sub…Si基板;V…导通孔;3…PA电路元件;10…第一基材;10C…第一电路;12…第一基材侧电极;13、23…导体柱;14、24…焊料层;15…树脂层;20…第二基材;20C…第二电路;20D…外延层;20N…GaAs基材;21…电路元件;22…第二基材侧电极;22U…基底电极;29…剥离层;31…外部连接用电极(接合焊盘);32…电路间连接布线;41、41A、41B、42、43…接合线;51…贯通导体;52…表面导体;60…高频放大器;61…高频放大器控制电路(PAC);62、64、65…开关(SW);63、66、69A、69B…阻抗匹配电路;67…低噪声放大器;68A、68B…双工器;70…天线开关(ANT-SW);71…带通滤波器;85…抗蚀剂膜;90…模块基板;91、92、93…模块基板侧电极;100…模制树脂;104A、104B…层叠体;111、113A、113B、113C、114B、115、116A、116B…RF电路模块;120…前端模块;200…母基板。
具体实施方式
之后,参照附图并列举几个具体的例子,表示用于实施本发明的多个方式。在各图中对同一部位标注同一附图标记。考虑到要点的说明或者理解的容易性,为了便于说明实施方式,而分为多个实施方式进行表示,但能够进行在不同的实施方式中表示的结构的局部置换或者组合。在第二实施方式及其之后,省略与第一实施方式共同的事项的记述,仅对不同点进行说明。特别是,对于基于相同的结构的相同的作用效果,不在每个实施方式中依次提及。
《第一实施方式》
在第一实施方式中,例示具备基本的结构要素的RF电路模块。
图1的(A)是第一实施方式的RF电路模块111的俯视图。图1的(B)是图1的(A)中的X-X部分处的剖视图。该RF电路模块111具备:具有部件搭载用的模块基板侧电极91、92的模块基板90、构成第一电路的第一基材10、构成第二电路的第二基材20、以及模制树脂100。模块基板90例如是玻璃环氧基板等PCB(Printed Circuit Board:印刷电路板)。模制树脂100例如是环氧树脂。
上述第一电路包括控制上述第二电路的动作的控制电路,上述第二电路包括放大RF信号的高频放大电路。第二基材20安装于第一基材10,第一基材10倒装芯片接合(倒置搭载)于模块基板90。
第一基材10和第二基材20具有将形成于第一基材10的电路和形成于第二基材20的电路不经由模块基板90而电连接的电路间连接布线。
第一基材10具有第一基材侧电极12和第一导体柱凸块PB1,第二基材20具有第二基材侧电极22和第二导体柱凸块PB2。第一导体柱凸块PB1相当于本发明的“第一基材侧导体突起部”,第二导体柱凸块PB2相当于本发明的“第二基材侧导体突起部”。
第一导体柱凸块PB1由在第一基材10的第一基材侧电极12形成的导体柱13和对该导体柱13的前端部施加的焊料层14构成。第二导体柱凸块PB2由在第二基材20的第二基材侧电极22形成的导体柱23和对该导体柱23的前端部施加的焊料层24构成。上述导体柱13、23例如是Cu镀膜,焊料层14、24例如是SnAg合金的膜。
形成于第一基材10的第一电路和形成于第二基材20的第二电路与模块基板90的电极形成面对置。
在模块基板90形成有模块基板侧电极91、92。第一基材10的第一导体柱凸块PB1与模块基板90的模块基板侧电极91连接。另外,第二基材20的第二导体柱凸块PB2与模块基板90的模块基板侧电极92连接。
这样,形成于第一基材10的第一电路和形成于第二基材20的第二电路与模块基板90的电极形成面对置,并经由第一导体柱凸块PB1和第二导体柱凸块PB2与模块基板90的模块基板侧电极91、92连接,由此第一电路与模块基板90侧的电路之间的路径、第二电路与模块基板90侧的电路之间的路径分别最短化。因此,抑制信号路径中的电特性的恶化。
在将包括第一基材10和第二基材20的功率放大模块(之后所示的PA电路元件3)搭载于模块基板90之后,由模制树脂100模制模块基板90的表面。
图2的(A)、图2的(B)是表示RF电路模块111的制造工序的图。图2的(A)是表示紧接在模块基板90上搭载包括第一基材10和第二基材20的PA电路元件3之前的状态的剖视图。图2的(B)是表示在模块基板90上搭载了PA电路元件3的状态的剖视图。
之后示出PA电路元件3的形成方法。在PA电路元件3的下表面形成有第一导体柱凸块PB1和第二导体柱凸块PB2。通过将该PA电路元件3的第一导体柱凸块PB1和第二导体柱凸块PB2与模块基板90对位,并进行加热加压,从而如图2的(B)所示,PA电路元件3的第一导体柱凸块PB1和第二导体柱凸块PB2的焊料层14、24与模块基板侧电极91、92连接。
图3是表示RF电路模块111中的、自形成于第二基材20的电路元件的散热路径即两个热传导路径的图。在图3中,虚线的箭头表示两个热传导路径。第一热传导路径由第二基材侧电极22和第二导体柱凸块PB2构成,电路元件产生的热经由该第一热传导路径而向模块基板侧电极92和模块基板90散热、排热。另外,第二热传导路径是从第二基材20向第一基材10方向的热传导路径,电路元件产生的热经由第二热传导路径而散热、排热。
第二导体柱凸块PB2设置在最接近作为形成于第二基材20的第二电路的一部分的第二基材侧电极22的附近。因此,上述散热、排热效率较高。
第一导体柱凸块PB1的高度比第一基材10的厚度低。因此,与例如通过线接合等安装技术将安装有第二基材20的第一基材10与模块基板90连接的情况相比,能够缩短布线长度,另外能够削减环路电感。
接下来,例示RF电路模块111的制造方法。图4是表示PA电路元件3的制造方法的图。图4中的步骤S1至S7的图是PA电路元件3的制造中途阶段的剖视图,步骤S8是所完成的PA电路元件3的剖视图。实际的制造是以晶片为单位进行的,但在图4中,图示单个半导体装置。
首先,如图4中的步骤S1所示,配置由Si基材构成的第一基材10。也可以根据需要,在由该Si基材构成的第一基材10的表面,使用一般的半导体工艺来形成接合层。该接合层是Au膜等金属膜、聚酰亚胺(PI)膜、聚苯并恶唑(PBO)、苯并环丁烯(BCB)等有机材料膜、AlN、SiC、金刚石等绝缘体。
接下来,如步骤S2所示,在第一基材10上接合第二基材20。在第二基材20上已经通过其他工序而形成有电路元件和电极。
接下来,如步骤S3所示,通过一般的半导体工艺,在第二基材20上形成第二基材侧电极22,另外,在第一基材10上形成第一基材侧电极12。
接下来,如步骤S4所示,形成在应该形成导体柱13和焊料层14(图2的(A)、图2的(B))的区域具有开口的抗蚀剂膜85。电极12、22在抗蚀剂膜85的开口内露出。
然后,如步骤S5、步骤S6所示,通过电镀法,使导体柱13、23和焊料层14、24堆积于在抗蚀剂膜85的开口内露出的电极12、22上。导体柱13、23由Cu形成,其厚度例如为40μm。这样,形成CPB(CopperPillar Bump:铜柱凸块)。焊料层14、24由SnAg合金形成,其厚度例如为30μm。
然后,如步骤S7所示,除去抗蚀剂膜85,最后进行回流处理,使焊料层14、24熔融,然后固化,由此像步骤S8所示那样得到PA电路元件3。
图5是表示第二基材20的制造方法、以及第二基材20相对于第一基材10的接合方法的图,是各工序的立体图。实际的制造是以晶片为单位进行的,但在图5中,图示单个半导体装置。
如图5中步骤S11所示,首先,在化合物半导体基材的母基板200形成剥离层29,在该剥离层29的上部通过外延生长法形成半导体薄膜,在该半导体薄膜形成多个电路元件和与该电路元件连接的电极。该部分是之后的第二基材20。
接下来如步骤S12所示,通过进行仅选择性地蚀刻剥离层29的处理,来将第二基材20(半导体薄膜片)从母基板200剥离。
然后,如步骤S13所示,在第一基材10上接合(bonding)第二基材20。即,从母基板200将半导体薄膜片即第二基材20转印到第一基材10。该接合基于范德华结合或者氢结合。除此之外,也可以通过静电力、共价结合、共晶合金结合等来接合。此外,也可以在其他工序中,在第一基材10上形成作为接合层的Au膜,使第二基材20加压、紧贴于接合层的表面,从而使接合层的Au向第二基材的GaAs层扩散并共晶化,由此进行接合。
向上述第二基材20的电路元件和电极的形成不仅在步骤S11所示的阶段进行,也可以如步骤S14所示,在将第二基材20与第一基材10接合之后,通过针对第二基材20的工艺(光刻、蚀刻工序)来进行。
上述半导体薄膜片的剥离和转印的方法能够应用专利第5132725号中公开的方法。即,在如图5中步骤S12所示,将第二基材20(半导体薄膜片)从母基板200剥离时,在第二基材20被支承体支承的状态下,从母基板200剥离。另外,在如图5中步骤S13所示,将第二基材20与第一基材10接合时,在被上述支承体支承的状态下进行。在图5中的步骤S12、S13中,为了明确表示第二基材20,省略上述支承体的图示。
这样构成的本实施方式的RF电路模块111实现如下的效果。
(a)第一基材10倒装芯片接合(倒置搭载)于模块基板90,因此不需要配置线接合用的焊盘、线材的空间,能够整体小型化。
(b)关于第一基材10和第二基材20,形成于第一基材10的电路和形成于第二基材20的电路由基材间连接导体电连接而不经由模块基板90,另外,第一基材10具有与模块基板90的电极连接的第一导体柱凸块PB1,第二基材20具有与模块基板90的电极连接的第二导体柱凸块PB2,因此,不需要在模块基板90形成用于将形成于第一基材10的电路和形成于第二基材20的电路连接的布线,能够整体小型化。
(c)形成于第二基材20的高频放大电路产生的热能够高效率地散热、排热,因此能够得到不受散热性制约且小型化的RF电路模块、或者小型且散热性高的RF电路模块。
《第二实施方式》
在第二实施方式中,例示构成为前端模块的RF电路模块。
图6的(A)是第二实施方式的前端模块120的俯视图,图6的(B)是图6的(A)中的X-X部分处的剖视图。其中,图6的(A)是没有之后所示的顶面屏蔽层和模制树脂的状态下的俯视图。
该前端模块120是连接在天线与发送电路和接收电路之间的电路。在模块基板90安装多个芯片部件而构成该前端模块120。在模块基板90的内层和最下层形成有接地导体。在模块基板90安装有天线开关70、低噪声放大器67、PA电路元件3、双工器、芯片电感器、芯片电容器等。模块基板90的上部由模制树脂100模制,在模制树脂100的表面形成有顶面屏蔽用的金属层。
PA电路元件3是由第一基材10和第二基材20构成的PA模块。在第一基材10形成有选择之后所示的2个系统的发送信号中的一方的开关和高频放大器的控制电路。在第二基材20上构成高频放大电路。
图7是表示本实施方式的前端模块120的电路结构的框图。前端模块120具备:与天线ANT连接的带通滤波器71、天线开关70、阻抗匹配电路69A、69B、双工器68A、68B、开关65、阻抗匹配电路66、低噪声放大器67、开关62、高频放大器60、高频放大器控制电路61、阻抗匹配电路63以及开关64。
开关62和高频放大器控制电路61形成于第一基材10,高频放大器60形成于第二基材。
另外,在图7中,天线开关70是选择天线与两个发送接收电路系统的连接的开关。低噪声放大器67是接收信号的初级的放大器。
这里,图24的(A)、图24的(B)表示作为第二实施方式的前端模块的比较例的前端模块的结构例。图24的(B)是图24的(A)中的X-X部分处的剖视图。与图6的(A)、图6的(B)所示的例子不同,具备作为分别单独部件的高频放大器60、高频放大器控制电路61和开关62。
根据第二实施方式,与图24的(A)、图24的(B)所示的作为比较例的前端模块进行对比可知,针对模块基板90的电子部件的安装面积缩小化。另外,高频放大器60与开关62之间的布线长度、高频放大器60与高频放大器控制电路61之间的布线长度缩短化,减少信号损耗、阻抗不匹配。
另外,在第一基材10上构成开关62和高频放大器控制电路61,因此与开关62单体、高频放大器控制电路61单体的尺寸相比,适度地变大,形成有高频放大器60的第二基材20与第一基材10的层叠体即PA电路元件3的形成变得容易。另外,利用该第一基材10与第二基材20的层叠体构成PA电路元件3,由此提高前端模块120的面积的缩小化效率。
另外,在以往的例如通过线接合、凸块将GaAs基板连接的结构中,为了该处理而需要较厚的GaAs基板,但在本实施方式中,是将例如GaAs基材的较薄的第二基材20粘贴于例如Si基材的第一基材10的结构,因此即使是2芯片的堆叠,也能够实现低高度化。
《第三实施方式》
在第三实施方式中,示出具备PA电路元件的RF电路模块的几个结构例。
图8是第三实施方式的RF电路模块113A的局部剖视图。在该图8中,表示安装有PA电路元件3的模块基板90的一部分和PA电路元件3的剖面。
在基于PCB(Printed Circuit Board:印刷电路板)的模块基板90形成有部件搭载用的模块基板侧电极91、92。PA电路元件3具备第一导体柱凸块PB1和第二导体柱凸块PB2。而且,PA电路元件3的第一导体柱凸块PB1和第二导体柱凸块PB2与模块基板90的模块基板侧电极91、92连接,由此倒置安装PA电路元件3。第一导体柱凸块PB1和第二导体柱凸块PB2的构造如第一实施方式所示。
PA电路元件3包括第一基材10和第二基材20。第一基材10在Si基板Si-sub上依次形成有作为绝缘层的SiO2层、作为器件层的Si层、作为布线形成层的SiO2层、作为钝化层的SiN层。
在第二基材20上形成有多个电路元件21和对该多个电路元件21施加工作电压或者通电工作电流的电极。第二基材20像第一实施方式中图5所示那样由其他工序形成,上述电路元件形成在其外延层上。外延层例如为约3μm,上述电极(布线层)为约10μm。
在SiN层的表面形成有作为再布线层的第一基材侧电极12、第二基材侧电极22和电路间连接布线32。在制造时,构成电路间连接布线32的导体层与第二基材侧电极22(本发明的“构成第二电路的导体层”)由同一层构成。
如图8所示,第一导体柱凸块PB1之一与构成电路间连接布线32的导体层直接接触。因此,第一电路的一部分与第二电路的一部分由较短的路径连接,并且也以较短的路径与模块基板侧的电路连接。
第一基材侧电极12、第二基材侧电极22和电路间连接布线32的表面被树脂层15绝缘覆盖。
在本实施方式中,第一基材10是单体半导体的基材,例如主要由Si或Ge构成。该第一基材10也可以由包括GaAs、AlAs、InAs、InP、GaP、InSb、GaN、InN、AlN、SiC、Ga2O3、DLC(Diamond-Like Carbon:类金刚石碳)、石墨(Graphite)、金刚石(Diamond)、玻璃(Glass)、蓝宝石(Sapphire)、Al2O3中的任一种的多种材料构成。
另外,在本实施方式中,第二基材20是化合物半导体的基材,例如由GaAs、AlAs、InAs、InP、GaP、InSb、GaN、InN、AlN、SiGe、SiC、Ga2O3、GaBi中的任一种构成。该第二基材20也可以是由这些材料中的多种材料构成的多元系混晶材料。
但是,选定为第一基材10的材料与选定为第二基材20的材料不同,第一基材10与第二基材20的制造工艺不同。基本上,优选第二基材20例如采用能够得到放大率、截止频率等规定的电特性的材料,另外,第一基材10选定为与第二基材20相比热传导率较高的关系。
在本实施方式中,第一基材10是Si基材,第二基材20是GaAs基材。Si基材的热传导率是156,GaAs基材的热传导率是46。上述电路元件21例如是多个单位晶体管并联连接而得的异质结双极晶体管(HBT),是通过针对第二基材20即GaAs基材的工艺而形成的。上述导体柱凸块PB2与多个单位晶体管的发射极电连接。多个单位晶体管在第一方向(图1的(A)、图1的(B)中的左右方向)上排列,导体柱凸块PB2形成为在第一方向上也延伸的形状。
图9是表示形成于第二基材20的HBT的结构的局部放大图。第二基材20具备GaAs基材20N和在其表面形成的外延层20D。在外延层20D形成有电路元件21(HBT)。第二基材20是共用的集电极。多个HBT的发射极由基底电极22U和第二基材侧电极22共同连接。
在图8中,在作为器件层的Si层例如形成有基于P沟道MOSPM和N沟道MOSNM的CMOS电路等。另外,在作为器件层的Si层与作为钝化层的SiN层之间形成有将形成于作为器件层的Si层的电路引出到第一基材侧电极12和电路间连接布线32的布线。该布线由基于Cu或者Al的多层布线层和将各布线层间连接的基于Cu或者Al的导通孔V构成。
图10是表示RF电路模块113A中的自电路元件21的散热路径即两个热传导路径的图。在图10中,虚线的箭头表示两个热传导路径。第一热传导路径由第二基材侧电极22和第二导体柱凸块PB2构成,电路元件21产生的热经由该第一热传导路径而向模块基板侧电极92和模块基板90散热、排热。另外,第二热传导路径是从第二基材20向第一基材10方向的热传导路径,电路元件21产生的热经由第二热传导路径而散热、排热。
作为布线形成层的SiO2层的热传导率为1.0[W/cm K],Si基材的热传导率为156[W/cm K],GaAs基板的热传导率为46[W/cm K]。即,第一基材10的热传导率比第二基材20的热传导率高。因此,第一基材10作为高效的热放射体发挥作用。像这样,第一基材10作为热传导路径发挥作用,因此导体柱13、焊料层14和模块基板侧电极92也作为热传导路径发挥作用。
在图8、图10所示的例子中,向模块基板90侧的散热、排热效果较高,因此抑制对上述CMOS电路等的热影响。
在这样构成的RF电路模块113A中,与第一实施方式所示的例子同样,能够得到整体小型化、另外散热性较高的RF电路模块。
图11是第三实施方式的其他的RF电路模块113B的局部剖视图。在具备散热器HS的方面与图8所示的RF电路模块113A不同。该RF电路模块113B在作为布线形成层的SiO2层不仅形成有将形成于作为器件层的Si层的电路引出到第一基材侧电极12的布线,而且在HBT即电路元件21的附近形成有散热器HS。该散热器HS由基于Cu或者Al的多层布线层和将各布线层间连接的基于Cu或者Al的导通孔V构成。
图12是上述散热器HS的导通孔层处的横剖视图。这样,构成散热器HS的布线层的导体呈面状扩展,多个导通孔在面方向上排列。这样,在散热器HS中,布线层(导体层)和导通孔的周围(绝缘体层)在横剖面方向和纵剖面方向上分别形成为格子状。
图13是表示RF电路模块113B中的自电路元件21的散热路径的图。在图13中,如虚线的箭头所示,电路元件21(HBT)产生的热由3个热传导路径散热、排热。第一热传导路径是将电路元件21的热经由第二基材侧电极22、第二导体柱凸块PB2向模块基板侧电极92和模块基板90散热、排热的路径。第二热传导路径是将电路元件21产生的热向第一基材10散热、排热的路径。第三热传导路径是将电路元件21的热经由散热器HS、第一基材侧电极12、第一导体柱凸块PB1向模块基板侧电极91和模块基板90散热、排热的路径。在该第一基材10形成有散热器HS,因此向第一基材10方向的热经由散热器HS而高效率地散热、排热。另外,还形成上述第三热传导路径,因此电路元件21的热高效率地散热、排热。
图14是第三实施方式的另一其他的RF电路模块113C的局部剖视图。在散热器HS的形成范围较宽的方面与图11所示的RF电路模块113B不同。在该RF电路模块113C中,散热器HS的尺寸较大,由此电路元件21的热经由散热器HS而有效地散热。另外,与图13所示的例子相比,形成多个将电路元件21的热经由散热器HS、第一基材侧电极12、第一导体柱凸块PB1向模块基板侧电极91和模块基板90散热、排热的热传导路径,因此经由该热传导路径的散热效果也较高。
在这样构成的RF电路模块113B、113C中,添加向散热器HS的散热、排热路径,并且还添加经由第一基材侧电极12和第一导体柱凸块PB1的热传导路径,从而能够得到散热性更高的RF电路模块。另外,散热器HS的导通孔V到达Si基板,因此基于Si基板的散热、排热效率较高。
此外,在图12所示的例子中,示出具有呈面状扩展的布线层的导体的散热器HS,布线层的导体也可以是按照导通孔V导通的每个部位而独立的图案。由此,抑制流过布线层的导体的涡流。另外,布线层的导体也可以在俯视布线层时为格子状。由此,也抑制流过布线层的导体的涡流。
《第四实施方式》
在第四实施方式中,例示了在使第一基材的电路形成面不与模块基板对置的状态下安装于模块基板的RF电路模块。
图15是第四实施方式的RF电路模块所具备的层叠体104A的剖视图。PA电路元件3包括第一基材10和第二基材20。层叠体104A是由第一基材10和第二基材20形成的层叠体。
第一基材10在Si基板Si-sub上依次形成有作为绝缘层的SiO2层、作为器件层的Si层、作为布线形成层的SiO2层、作为钝化层的SiN层。在SiN层的表面形成有作为再布线层的第一基材侧电极12、第二基材侧电极22和电路间连接布线32。
在制造时,构成这些电路间连接布线32、第二基材侧电极22(本发明的“构成第二电路的导体层”)以及第一基材侧电极12的导体层也可以由同一层构成。由此,能够简化制造工序。
在第二基材20形成有多个电路元件21和对该多个电路元件21施加工作电压或者通电工作电流的电极。第二基材20像第一实施方式中图5所示那样由其他工序形成,上述电路元件形成在其外延层上。
另外,在第一基材10的表面,在与第二基材20不重叠的位置形成有第一基材侧电极12和电路间连接布线32。第一基材侧电极12、第二基材侧电极22和电路间连接布线32为了外部连接,而它们的表面露出。
第一基材10、形成于第一基材10的第一电路、第二基材20和形成于第二基材20的第二电路的结构与图8所示的例子相同。
关于层叠体104A,第一基材10的底面搭载于模块基板,第一基材侧电极12、第二基材侧电极22或者电路间连接布线32与模块基板上的电极经由线材连接。
如图15中细线的辅助线所示,在俯视模块基板时,构成电路间连接布线32的导体层的上表面比位于第二电路的最上部的第二基材侧电极22的上表面低。
图16是第四实施方式的其他的电路模块114B的剖视图。该电路模块114B具备模块基板90和层叠体104B。
层叠体104B的基本的结构与图15所示的层叠体104A相同,但在第一基材10和第二基材20的表面覆盖树脂层15,与第一基材侧电极12导通的外部连接用电极(接合焊盘)31、第二基材侧电极22和电路间连接布线32的表面从该树脂层15露出。
层叠体104B搭载于模块基板90,层叠体104B的上表面的外部连接用电极31与模块基板侧电极93经由线材41连接。
在图16所示的例中,在俯视模块基板90时,构成电路间连接布线32的导体层的上表面与位于第二电路的最上部的第二基材侧电极22的上表面为同一面。
在本实施方式中也是,构成与第一基材侧电极12导通的外部连接用电极(接合焊盘)31、第二基材侧电极22以及电路间连接布线32的导体层可以由同一层构成,能够通过由同一层形成而简化制造工序。
图17是表示第四实施方式的功率放大模块等层叠体的制造方法的图。特别是表示电路间连接布线的形成方法。
图17中的步骤S1至S3的图是功率放大模块的制造中途阶段的剖视图。实际的制造是以晶片为单位进行的,但在图17中,图示单个半导体装置。
首先,如图17中的步骤S1所示,配置由Si基材构成的第一基材10。也可以根据需要,在由该Si基材构成第一基材10的表面,使用一般的半导体工艺形成接合层。该接合层是Au膜等金属膜、聚酰亚胺(PI)膜、聚苯并恶唑(PBO)、苯并环丁烯(BCB)等有机材料膜、AlN、SiC、金刚石等绝缘体。
接下来,如步骤S2所示,在第一基材10上接合第二基材20。在第二基材20上已经由其他工序形成有电路元件和电极。
接下来,如步骤S3所示,通过一般的半导体工艺,在第二基材20上形成第二基材侧电极22,在第一基材10上形成第一基材侧电极12,从第二基材20到第一基材10形成电路间连接布线32。该电路间连接布线32将形成于第一基材10的第一电路和形成于第二基材20的第二电路连接。
上述第一基材侧电极12、第二基材侧电极22和电路间连接布线32能够在一个工序中同时形成。
图18是表示第四实施方式的前端模块120的电路结构的框图。前端模块120具备:与天线ANT连接的带通滤波器71、天线开关70、阻抗匹配电路69A、69B、双工器68A、68B、开关64、65、阻抗匹配电路66、低噪声放大器67、开关62、高频放大器60、高频放大器控制电路61、阻抗匹配电路63i、63o、开关64。
开关62和高频放大器控制电路61形成于第一基材10的第一电路10C,高频放大器60形成于第二基材20的第二电路20C。阻抗匹配电路63o形成于第一电路10C、第二电路20C或者这双方。阻抗匹配电路63i也形成于第一电路10C、第二电路20C或者这双方。阻抗匹配电路63i、63o例如分别由在将第一电路10C和第二电路20C连接的导体部产生的电感和电容构成。
图18所示的前端模块120的基本的结构与图7所示的前端模块120相同。在图18中,若由(1)表示向开关62的发送信号输入部,由(2)表示发送信号的第一电路10C的输出部,由(3)表示发送信号向第二电路20C的输入部,则(2)与(3)的路径非常近。
这里,在图26和图27中表示作为比较例的RF电路模块的剖视图。在图26、图27任一方所示的例子中,形成有第一电路的第一基材10搭载于模块基板90,形成有第二电路的第二基材20搭载于该第一基材10。
在图26所示的例子中,模块基板侧电极93A与第一电路的一部分经由线材41A连接,模块基板侧电极93B与第一电路的一部分经由线材41B连接,该模块基板侧电极93B与第二电路的一部分经由线材43连接。
在图27所示的例子中,模块基板侧电极93与第一电路的一部分经由线材41连接,第一电路的一部分与第二电路的一部分经由线材42连接。
在图26所示的构造中,第一电路的一部分与第二电路的一部分经由线材41B、43连接,但该连接路径成为图18所示的(2)-(3)间的路径,因此基于线材41B、43的寄生电感和寄生电容较大。因此,信号损耗较大,另外无法得到阻抗匹配电路63i的规定的特性。
在图27所示的构造中,第一电路的一部分与第二电路的一部分经由线材42连接,但该连接路径成为图18所示的(2)-(3)间的路径,因此受到基于线材42的寄生电感和寄生电容的影响。因此,虽然与图26所示的构造相比得到改善,但仍然存在信号损耗,另外无法得到规定的阻抗匹配电路63i的特性。
与此相对,在图15、图16、图17所示的本实施方式的RF电路模块中,图18所示的(2)-(3)间的路径由电路间连接布线32构成。该电路间连接布线32所产生的寄生电感和寄生电容较小。因此,信号损耗较小,另外能够得到阻抗匹配电路63i的规定的特性。
《第五实施方式》
在第五实施方式中,例示了在第一基材10具有贯通导体的RF电路模块。
图19是第五实施方式的RF电路模块115的剖视图。该RF电路模块115在作为布线形成层的SiO2层形成有将形成于作为器件层的Si层的电路引出到第一基材侧电极12的导通孔V等布线。另外,在HBT即电路元件21的附近形成有散热器HS。该散热器HS由基于Cu或者Al的多层布线层和将各布线层间连接的基于Cu或者Al的导通孔V构成。在第一基材10的上表面形成有表面导体52,在该表面导体52与散热器HS之间形成有多个贯通导体51。
在第一基材10为Si的情况下,贯通导体51例如由W(钨)或者Cu构成。在第一基材10为GaAs的情况下,贯通导体51例如能够由Au构成。
根据本实施方式,能够将HBT即电路元件21产生的热经由散热器HS、贯通导体51和表面导体52高效率地散热、排热到外部。
《第六实施方式》
在第六实施方式中,表示第一电路与第二电路的连接构造和第一电路和第二电路相对于模块基板的连接构造与之前所示的例子不同的RF电路模块。
图20是第六实施方式的RF电路模块116A的概略主视图。在第一基材10的表面形成有第一电路10C,在第二基材20的表面形成有第二电路20C。
在模块基板90形成有部件连接用的电极即模块基板侧电极93。
第一电路10C或者第二电路20C包括放大高频信号的高频放大电路。另外,构成高频放大电路的电路以外的另一个电路包括控制高频放大电路的动作的控制电路。例如第二电路20C包括上述高频放大器,第一电路10C包括上述控制电路。该“高频放大电路”例如相当于图18所示的高频放大器60,“控制电路”例如相当于图18所示的高频放大器控制电路61。
第二基材20与第一基材10以在俯视模块基板90时一方内包于另一方的状态重叠。在图20所示的例子中,以第二基材20内包于第一基材10的状态重叠。
从形成有第二电路20C的第二基材20到形成有第一电路10C的第一基材10,形成有构成将第一电路10C和第二电路20C电连接的电路间连接布线32的导体层。即,第一基材10和第二基材20具有构成将第一电路10C和第二电路20C不经由模块基板90而电连接的电路间连接布线32的导体层。
构成电路间连接布线32的导体层与构成第一电路10C或者第二电路20C的导体层由同一层构成。即,构成电路间连接布线32的导体层的一部分与构成第一电路10C的导体层处于同一层,构成电路间连接布线32的导体层的一部分与构成第二电路12C的导体层处于同一层。
通过该构造,第一电路10C的一部分与第二电路20C的一部分导通,并且该导通部经由线材41与模块基板侧电极93导通。
图21是第六实施方式的其他的RF电路模块116B的主视图。在第一基材10的表面形成有第一电路10C,在第二基材20的表面形成有第二电路20C。
该RF电路模块116B在第一基材10的下表面形成有表面导体52,在该表面导体52与第一电路10C之间形成有多个贯通导体51。其他的结构与RF电路模块116A相同。根据RF电路模块116B,能够将第一电路10C产生的热经由贯通导体51和表面导体52而高效率地散热、排热到外部。
《第七实施方式》
在第七实施方式中,例示了在第一电路和第二电路与模块基板对置的状态下,将第一基材和第二基材搭载于模块基板的RF电路模块。
图22是第七实施方式的RF电路模块117A的主视图。在第一基材10的表面形成有第一电路10C,在第二基材20的表面形成有第二电路20C。
第一基材10的第一电路10C和第二基材20的第二电路20C与模块基板90的电极的形成面对置。
第一基材10具有与模块基板90的电极连接的导体柱凸块PB1A、PB1B。导体柱凸块PB1B与构成电路间连接布线32的导体层直接接触。导体柱凸块PB1A、PB1B相当于本发明的“导体突起部”。根据该构造,第一电路10C的一部分与第二电路20C的一部分的连接路径能够缩短化,并且这些第一电路10C和第二电路20C与模块基板90的电极的连接路径也能够较短。因此,与以往的使用线材进行连接的构造相比,能够将上述连接路径低阻抗化、低电感化。
第一电路10C或者第二电路20C包括放大高频信号的高频放大电路。另外,构成高频放大电路的电路以外的另一个电路包括控制高频放大电路的动作的控制电路。例如第二电路20C包括上述高频放大器,第一电路10C包括上述控制电路。该“高频放大电路”例如相当于图18所示的高频放大器60,“控制电路”例如相当于图18所示的高频放大器控制电路61。
第二基材20和第一基材10以在俯视模块基板90时一方内包于另一方的状态重叠。在图22所示的例子中,以第二基材20内包于第一基材10的状态重叠。
从形成有第二电路20C的第二基材20到形成有第一电路10C的第一基材10,形成有构成将第一电路10C和第二电路20C电连接的电路间连接布线32的导体层。
根据该构造,第一电路10C的一部分与第二电路20C的一部分经由电路间连接布线32导通,第一电路10C的一部分和第二电路20C的一部分经由导体柱凸块PB1与模块基板的电极导通。
图23是第七实施方式的其他的RF电路模块117B的主视图。在第一基材10的表面形成有第一电路10C,在第二基材20的表面形成有第二电路20C。
第一基材10的第一电路10C和第二基材20的第二电路20C与模块基板90的电极的形成面对置。第一基材10具有与模块基板90的电极连接的导体柱凸块PB1A、PB1B。另外,第二基材20具有与模块基板90的电极连接的导体柱凸块PB2。
上述导体柱凸块PB2与构成电路间连接布线32的导体层直接接触。根据该构造,第一电路10C的一部分与第二电路20C的一部分的连接路径能够缩短化,并且这些第一电路10C和第二电路20C与模块基板90的电极的连接路径也能够较短。特别是,能够使第二电路20C与形成于模块基板90的电极的连接路径更短。因此,与以往的使用线材进行连接的构造相比,能够将上述连接路径低阻抗化、低电感化。
最后,上述的实施方式的说明在所有的方面是例示,并不是限制性的。对于本领域技术人员来说,能够适当地变形和变更。本发明的范围由权利要求书表示,而不是由上述的实施方式表示。并且,在本发明的范围中包括与权利要求书均等的范围内的从实施方式的变更。
Claims (31)
1.一种RF电路模块,具备:
模块基板,具有部件搭载用的电极;
第一基材,构成第一电路;以及
第二基材,构成第二电路,
所述第一电路包括控制所述第二电路的动作的控制电路,
所述第二电路包括放大RF信号的高频放大电路,
所述第二基材安装于所述第一基材,
所述第一基材倒装芯片接合于所述模块基板,
所述第一基材和所述第二基材具有导体层,所述导体层构成将所述第一电路和所述第二电路不经由所述模块基板而电连接的电路间连接布线,
所述第一基材具有与所述模块基板的所述电极连接的第一基材侧导体突起部,
所述第二基材具有与所述模块基板的所述电极连接的第二基材侧导体突起部。
2.根据权利要求1所述的RF电路模块,其中,
所述第二基材侧导体突起部设置于最靠近所述第二电路的附近。
3.根据权利要求1或2所述的RF电路模块,其中,
在所述第一基材的与所述第二基材不重叠的位置的表面形成有第一基材侧电极,
所述第一基材侧导体突起部与所述第一基材侧电极连接。
4.根据权利要求1或2所述的RF电路模块,其中,
所述第一基材为单体半导体的基材,
所述第二基材为化合物半导体的基材。
5.根据权利要求1或2所述的RF电路模块,其中,
所述第一基材的热传导率比所述第二基材的热传导率高。
6.根据权利要求1或2所述的RF电路模块,其中,
所述第二基材比所述第一基材薄。
7.根据权利要求1或2所述的RF电路模块,其中,
所述控制电路具有所述RF信号的开关电路。
8.根据权利要求1或2所述的RF电路模块,其中,
所述第一基材具备由导体层和绝缘体层层叠而成的散热器,所述散热器配置在所述第二电路的附近。
9.根据权利要求1或2所述的RF电路模块,其中,
构成所述电路间连接布线的导体层与构成所述第二电路的导体层由同一层构成。
10.根据权利要求1或2所述的RF电路模块,其中,
所述第一电路和所述第二电路与所述模块基板的电极形成面对置。
11.根据权利要求10所述的RF电路模块,其中,
所述第一基材侧导体突起部与构成所述电路间连接布线的导体层直接接触。
12.根据权利要求10所述的RF电路模块,其中,
所述第一基材侧导体突起部的高度比所述第一基材的厚度低。
13.一种RF电路模块,具备:
模块基板,具有部件搭载用的电极;
第一基材,构成第一电路;以及
第二基材,构成第二电路,
所述第一电路包括控制所述第二电路的动作的控制电路,
所述第二电路包括放大RF信号的高频放大电路,
所述第二基材安装于所述第一基材,
所述第一基材和所述第二基材具有导体层,所述导体层构成将所述第一电路和所述第二电路不经由所述模块基板而电连接的电路间连接布线,
在俯视所述模块基板时,构成所述电路间连接布线的导体层的上表面位于所述第二电路的上表面以下的位置。
14.根据权利要求13所述的RF电路模块,其中,
所述第一电路或者所述第二电路具有在所述高频放大电路与所述高频放大电路的输入或者输出之间使阻抗匹配的阻抗匹配电路或者阻抗匹配电路的一部分。
15.根据权利要求13或14所述的RF电路模块,其中,
所述第一基材为单体半导体的基材,
所述第二基材为化合物半导体的基材。
16.根据权利要求13或14所述的RF电路模块,其中,
所述第一基材的热传导率比所述第二基材的热传导率高。
17.根据权利要求13或14所述的RF电路模块,其中,
所述第二基材比所述第一基材薄。
18.根据权利要求13或14所述的RF电路模块,其中,
所述控制电路具有所述RF信号的开关电路。
19.根据权利要求13或14所述的RF电路模块,其中,
所述第一基材具备由导体层和绝缘体层层叠而成的散热器,所述散热器配置在所述第二电路的附近。
20.根据权利要求13或14所述的RF电路模块,其中,
构成所述电路间连接布线的导体层与构成所述第二电路的导体层由同一层构成。
21.根据权利要求13或14所述的RF电路模块,其中,
所述第一基材具有与所述模块基板的所述电极连接的第一基材侧导体突起部,
所述第二基材具有与所述模块基板的所述电极连接的第二基材侧导体突起部,
所述第一电路和所述第二电路与所述模块基板的电极形成面对置。
22.根据权利要求21所述的RF电路模块,其中,
所述第一基材侧导体突起部与构成所述电路间连接布线的导体层直接接触。
23.根据权利要求21所述的RF电路模块,其中,
所述第一基材侧导体突起部的高度比所述第一基材的厚度低。
24.一种RF电路模块,具备:
模块基板,具有部件连接用的电极;
第一基材,构成与所述模块基板的电极导通的第一电路;以及
第二基材,构成与所述模块基板的电极导通的第二电路,
所述第一电路或者所述第二电路包括放大高频信号的高频放大电路,
构成所述高频放大电路的电路以外的另一个电路包括控制所述高频放大电路的动作的控制电路,
所述第二基材和所述第一基材以在俯视所述模块基板时一方内包于另一方的状态重叠,
所述第一基材和所述第二基材具有导体层,所述导体层构成将所述第一电路和所述第二电路不经由所述模块基板而电连接的电路间连接布线。
25.根据权利要求24所述的RF电路模块,其中,
构成所述电路间连接布线的导体层与构成所述第一电路或者所述第二电路的导体层由同一层构成。
26.根据权利要求24或25所述的RF电路模块,其中,
所述第一基材和所述第二基材中的与所述模块基板接近地配置的基材具有贯通导体,所述贯通导体将构成所述第一电路或所述第二电路的所述基材的第一面和与所述第一面对置的所述基材的第二面电连接。
27.根据权利要求24或25所述的RF电路模块,其中,
所述第一基材或者所述第二基材具有与所述模块基板的电极连接的导体突起部,所述第一基材的所述第一电路和所述第二基材的所述第二电路与所述模块基板的电极的形成面对置。
28.根据权利要求27所述的RF电路模块,其中,
所述导体突起部与构成所述电路间连接布线的导体层直接接触。
29.根据权利要求27所述的RF电路模块,其中,
所述第一基材和所述第二基材中的在俯视所述模块基板时内包另一个基材的基材所具备的所述导体突起部的高度比所述第一基材的厚度低。
30.一种RF电路模块的制造方法,所述RF电路模块具备:模块基板,具有部件搭载用的电极;第一基材,构成包括控制电路的第一电路;以及第二基材,构成包括由所述控制电路控制的高频放大电路的第二电路,其中,所述RF电路模块的制造方法具有:
在作为所述第一基材的单体半导体基材形成所述第一电路和基材间连接导体的工序;
经由剥离层在作为所述第二基材的化合物半导体基材形成具有所述第二电路和基材间连接导体的半导体薄膜的工序;
通过蚀刻除去所述剥离层而将所述半导体薄膜从所述化合物半导体基材剥离来构成所述第二基材的工序;
通过在所述第一基材的规定位置接合所述第二基材,来将所述第一基材的所述基材间连接导体和所述第二基材的所述基材间连接导体连接,并构成由所述第一基材和所述第二基材形成的层叠体的工序;
形成与所述第一电路连接的第一基材侧导体突起部以及与所述第二电路连接的第二基材侧导体突起部的工序;以及
通过将所述第一基材侧导体突起部和所述第二基材侧导体突起部与所述模块基板的所述电极连接,来将所述层叠体搭载于所述模块基板的工序。
31.一种RF电路模块的制造方法,所述RF电路模块具备:模块基板,具有部件搭载用的电极;第一基材,构成包括控制电路的第一电路;以及第二基材,构成包括由所述控制电路控制的高频放大电路的第二电路,其中,所述RF电路模块的制造方法具有:
在作为所述第一基材的单体半导体基材形成所述第一电路的工序;
经由剥离层在作为所述第二基材的化合物半导体基材形成具有所述第二电路的半导体薄膜的工序;
通过蚀刻除去所述剥离层而将所述半导体薄膜从所述化合物半导体基材剥离来构成所述第二基材的工序;
在所述第一基材的规定位置接合所述第二基材来构成由所述第一基材和所述第二基材形成的层叠体的工序;
形成将所述第一电路和所述第二电路连接的基材间连接导体的工序;以及
将所述层叠体搭载于所述模块基板的工序。
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