JP2013541854A - 垂直外部キャビティ面発光レーザに対する光学素子 - Google Patents

垂直外部キャビティ面発光レーザに対する光学素子 Download PDF

Info

Publication number
JP2013541854A
JP2013541854A JP2013537237A JP2013537237A JP2013541854A JP 2013541854 A JP2013541854 A JP 2013541854A JP 2013537237 A JP2013537237 A JP 2013537237A JP 2013537237 A JP2013537237 A JP 2013537237A JP 2013541854 A JP2013541854 A JP 2013541854A
Authority
JP
Japan
Prior art keywords
vecsel
optical
mirror
substrate
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013537237A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013541854A5 (enExample
Inventor
シュテファン グローネンボルン
ホルガー メンチ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2013541854A publication Critical patent/JP2013541854A/ja
Publication of JP2013541854A5 publication Critical patent/JP2013541854A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Microscoopes, Condenser (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Lenses (AREA)
JP2013537237A 2010-11-03 2011-11-01 垂直外部キャビティ面発光レーザに対する光学素子 Pending JP2013541854A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10189788.2 2010-11-03
EP10189788 2010-11-03
PCT/IB2011/054850 WO2012059864A1 (en) 2010-11-03 2011-11-01 Optical element for vertical external-cavity surface-emitting laser

Publications (2)

Publication Number Publication Date
JP2013541854A true JP2013541854A (ja) 2013-11-14
JP2013541854A5 JP2013541854A5 (enExample) 2014-12-18

Family

ID=45370528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013537237A Pending JP2013541854A (ja) 2010-11-03 2011-11-01 垂直外部キャビティ面発光レーザに対する光学素子

Country Status (5)

Country Link
US (1) US9112330B2 (enExample)
EP (1) EP2636111B8 (enExample)
JP (1) JP2013541854A (enExample)
CN (1) CN103181040B (enExample)
WO (1) WO2012059864A1 (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018221042A1 (ja) 2017-05-31 2018-12-06 ソニー株式会社 発光素子および発光素子の製造方法
CN110892597A (zh) * 2017-07-18 2020-03-17 索尼公司 发光装置和发光装置阵列
JP2020530666A (ja) * 2017-08-11 2020-10-22 オプティパルス・インコーポレイテッド ハイパワーのレーザグリッド構造
JP2020530941A (ja) * 2017-08-14 2020-10-29 トリルミナ コーポレーション 表面実装対応可能なｖｃｓｅｌアレイ
WO2020246280A1 (ja) * 2019-06-04 2020-12-10 ソニー株式会社 発光素子、発光素子アレイ及び発光素子アレイの製造方法
WO2021149372A1 (ja) * 2020-01-20 2021-07-29 ソニーセミコンダクタソリューションズ株式会社 発光装置およびその製造方法
WO2021166473A1 (ja) * 2020-02-19 2021-08-26 ソニーセミコンダクタソリューションズ株式会社 発光装置およびその製造方法
WO2022107571A1 (ja) * 2020-11-20 2022-05-27 ソニーセミコンダクタソリューションズ株式会社 発光装置およびその製造方法
JP2022088580A (ja) * 2017-09-26 2022-06-14 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射放出半導体デバイス
WO2022176434A1 (ja) * 2021-02-22 2022-08-25 ソニーグループ株式会社 レーザ素子、レーザ素子アレイ及びレーザ素子の製造方法
KR20230037660A (ko) * 2020-08-20 2023-03-16 애플 인크. 통합된 에지-생성 수직 방출 레이저
WO2023145271A1 (ja) * 2022-01-27 2023-08-03 ソニーグループ株式会社 面発光素子、光源装置及び面発光素子の製造方法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK2823344T3 (da) * 2012-03-05 2019-05-20 Nanoprecision Products Inc Koblingsenhed, der har en struktureret reflektiv overflade til at koble indgang/udgang af en optisk fiber
CN103412406B (zh) * 2013-07-30 2015-12-09 中国科学院半导体研究所 一种用于激光显示的红光半导体面阵光源装置
JP2015219422A (ja) * 2014-05-19 2015-12-07 Ｎｌｔテクノロジー株式会社 光学部材及び表示装置
US10749312B2 (en) 2015-05-28 2020-08-18 Vixar, Inc. VCSELs and VCSEL arrays designed for improved performance as illumination sources and sensors
EP3329562B1 (en) 2015-07-30 2024-03-13 Optipulse Inc. Rigid high power and high speed lasing grid structures
US10630053B2 (en) 2015-07-30 2020-04-21 Optipulse Inc. High power laser grid structure
WO2017027864A1 (en) 2015-08-12 2017-02-16 Nanoprecision Products, Inc. Multiplexer/demultiplexer using stamped optical bench with micro mirrors
US9880366B2 (en) 2015-10-23 2018-01-30 Nanoprecision Products, Inc. Hermetic optical subassembly
DE102017105997A1 (de) 2017-03-21 2018-09-27 Valeo Schalter Und Sensoren Gmbh Sendeeinrichtung für eine optische Erfassungseinrichtung eines Kraftfahrzeugs mit einem spezifischen Vormontagemodul, optische Erfassungseinrichtung sowie Kraftfahrzeug
US20180301871A1 (en) * 2017-04-05 2018-10-18 Vixar Novel patterning of vcsels for displays, sensing, and imaging
DE102017112235A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Laserdiode und Verfahren zum Herstellen einer Laserdiode
US10958350B2 (en) 2017-08-11 2021-03-23 Optipulse Inc. Laser grid structures for wireless high speed data transfers
US10374705B2 (en) 2017-09-06 2019-08-06 Optipulse Inc. Method and apparatus for alignment of a line-of-sight communications link
CN111164393A (zh) 2017-09-29 2020-05-15 苹果公司 连接的外延光学感测系统
CN108490633A (zh) * 2018-03-12 2018-09-04 广东欧珀移动通信有限公司 结构光投射器、深度相机和电子设备
CN108303757B (zh) * 2018-03-12 2020-07-10 Oppo广东移动通信有限公司 激光投射模组、深度相机和电子装置
US10897122B2 (en) * 2018-04-20 2021-01-19 Hewlett Packard Enterprise Development Lp Optical apparatus for optical transceivers
US11303355B2 (en) 2018-05-30 2022-04-12 Apple Inc. Optical structures in directional free-space optical communication systems for portable electronic devices
EP3598591A1 (en) * 2018-07-17 2020-01-22 Koninklijke Philips N.V. Laser arrangement with reduced building height
US11178392B2 (en) * 2018-09-12 2021-11-16 Apple Inc. Integrated optical emitters and applications thereof
CN109346922B (zh) * 2018-11-29 2020-11-17 西安工业大学 一种输出均匀偏振光的微型激光器及其制备方法
DE102018130562A1 (de) * 2018-11-30 2020-06-04 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiter-bauelement mit stromverteilungsschicht und verfahren zur herstellung des optoelektronischen halbleiter-bauelements
CN118117450A (zh) * 2019-02-04 2024-05-31 苹果公司 具有一体式微透镜的竖直发射器
US11549799B2 (en) 2019-07-01 2023-01-10 Apple Inc. Self-mixing interference device for sensing applications
US12218478B2 (en) 2020-05-10 2025-02-04 Apple Inc. Folded optical conjugate lens
US12372724B2 (en) 2020-09-23 2025-07-29 Apple Inc. Light splitting device
US11994694B2 (en) 2021-01-17 2024-05-28 Apple Inc. Microlens array with tailored sag profile
CN115117735A (zh) * 2021-03-17 2022-09-27 上海禾赛科技有限公司 激光器、光源模组及激光雷达
US12413043B2 (en) 2021-09-21 2025-09-09 Apple Inc. Self-mixing interference device with tunable microelectromechanical system
US20240088629A1 (en) * 2022-09-13 2024-03-14 Ii-Vi Delaware, Inc. Micro-optics on vcsel-based flood illuminator
DE102023133477A1 (de) * 2023-11-30 2025-06-05 Trumpf Photonic Components Gmbh VCSEL und Verfahren zum Herstellen eines VCSEL

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08321660A (ja) * 1995-05-25 1996-12-03 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2002289969A (ja) * 2001-03-27 2002-10-04 Ricoh Co Ltd 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび波長多重伝送システム
JP2005537643A (ja) * 2002-09-02 2005-12-08 ヘンツェ−リソチェンコ パテントフェルヴァルトゥングス ゲーエムベーハー ウント コー．カーゲー 半導体レーザ装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6026111A (en) * 1997-10-28 2000-02-15 Motorola, Inc. Vertical cavity surface emitting laser device having an extended cavity
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
JP3618655B2 (ja) 2000-09-12 2005-02-09 株式会社西建設 蓄熱式電気暖房装置を用いた暖房方法
FR2824188B1 (fr) * 2001-04-25 2003-12-12 Commissariat Energie Atomique Dispositif optique comportant une pluralite de cavites resonantes de longueurs differentes associees a differentes longueurs d'ondes
JP2003060299A (ja) 2001-06-07 2003-02-28 Ricoh Opt Ind Co Ltd 光出力素子・光出力素子アレイおよびレンズ素子・レンズ素子アレイ
US7502392B2 (en) * 2003-09-12 2009-03-10 Semiconductor Energy Laboratory Co., Ltd. Laser oscillator
US7449724B2 (en) * 2003-09-12 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7260135B2 (en) * 2003-09-26 2007-08-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2006066538A (ja) 2004-08-25 2006-03-09 Hamamatsu Photonics Kk 面発光レーザ光源の製造方法及び面発光レーザ光源
US20070002922A1 (en) * 2005-06-30 2007-01-04 Intel Corporation Retro-reflecting lens for external cavity optics
CN101321686A (zh) 2005-10-07 2008-12-10 佛罗里达大学研究基金会有限公司 用于多路信号传递和光编码的多组分纳米颗粒
ATE507503T1 (de) * 2005-12-01 2011-05-15 Limo Patentverwaltung Gmbh Vorrichtung zur beeinflussung von licht
WO2008012767A2 (en) 2006-07-26 2008-01-31 Ecole Polytechnique Federale De Lausanne (Epfl) Miniaturized optical tweezers based on high-na micro-mirrors
KR100811032B1 (ko) * 2006-10-17 2008-03-06 삼성전기주식회사 모노리틱 조명장치
US7786808B2 (en) 2007-01-31 2010-08-31 Teledyne Scientific & Imaging, Llc Micro-structured optic apparatus
US7777956B2 (en) 2007-05-29 2010-08-17 University Of Utah Research Foundation Micro-lens arrays and curved surface fabrication techniques
KR101338354B1 (ko) 2007-12-28 2013-12-16 광주과학기술원 마이크로렌즈의 제조방법
CN102231991A (zh) 2008-07-31 2011-11-02 生物工程大学精神物质实验室 应用于生物分析的活性粒子及其制备方法
IT1391530B1 (it) 2008-07-31 2012-01-11 Cyanagen S R L Particelle attive per applicazioni bio-analitiche e metodi per la loro preparazione
JP5744749B2 (ja) 2008-12-10 2015-07-08 コーニンクレッカ フィリップス エヌ ヴェ 改善された空間モードを備えるハイパワーｖｃｓｅｌ
US8111730B2 (en) * 2009-08-20 2012-02-07 International Business Machines Corporation 3D optoelectronic packaging

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08321660A (ja) * 1995-05-25 1996-12-03 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2002289969A (ja) * 2001-03-27 2002-10-04 Ricoh Co Ltd 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび波長多重伝送システム
JP2005537643A (ja) * 2002-09-02 2005-12-08 ヘンツェ−リソチェンコ パテントフェルヴァルトゥングス ゲーエムベーハー ウント コー．カーゲー 半導体レーザ装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6015024834; ＩＥＥＥ　ＰＨＯＴＯＮＩＣＳ　ＴＥＣＨＮＯＬＯＧＹ　ＬＥＴＴＥＲＳ Ｖｏｌ．１７　Ｎｏ．３, 2005, ｐ．５２２-５２４ *

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11374384B2 (en) 2017-05-31 2022-06-28 Sony Corporation Light-emitting device and method of manufacturing light-emitting device
WO2018221042A1 (ja) 2017-05-31 2018-12-06 ソニー株式会社 発光素子および発光素子の製造方法
CN110892597A (zh) * 2017-07-18 2020-03-17 索尼公司 发光装置和发光装置阵列
US11594859B2 (en) 2017-07-18 2023-02-28 Sony Corporation Light emitting element and light emitting element array
CN110892597B (zh) * 2017-07-18 2022-11-04 索尼公司 发光装置和发光装置阵列
JP7418328B2 (ja) 2017-08-11 2024-01-19 オプティパルス・インコーポレイテッド ハイパワーのレーザグリッド構造
JP2020530666A (ja) * 2017-08-11 2020-10-22 オプティパルス・インコーポレイテッド ハイパワーのレーザグリッド構造
JP2020530941A (ja) * 2017-08-14 2020-10-29 トリルミナ コーポレーション 表面実装対応可能なｖｃｓｅｌアレイ
US12191635B2 (en) 2017-08-14 2025-01-07 Lumentum Operations Llc Surface-mount compatible VCSEL array
JP7021829B2 (ja) 2017-08-14 2022-02-17 ルメンタム・オペレーションズ・リミテッド・ライアビリティ・カンパニー 表面実装対応可能なｖｃｓｅｌアレイ
US12142712B2 (en) 2017-09-26 2024-11-12 Osram Oled Gmbh Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component
JP2022088580A (ja) * 2017-09-26 2022-06-14 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射放出半導体デバイス
US11848406B2 (en) 2017-09-26 2023-12-19 Osram Oled Gmbh Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component
JP7318048B2 (ja) 2017-09-26 2023-07-31 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射放出半導体デバイス
JPWO2020246280A1 (enExample) * 2019-06-04 2020-12-10
WO2020246280A1 (ja) * 2019-06-04 2020-12-10 ソニー株式会社 発光素子、発光素子アレイ及び発光素子アレイの製造方法
US12334706B2 (en) 2019-06-04 2025-06-17 Sony Group Corporation Light emitting element, light emitting element array, and method of manufacturing light emitting element array
JP7548226B2 (ja) 2019-06-04 2024-09-10 ソニーグループ株式会社 発光素子、発光素子アレイ及び発光素子アレイの製造方法
WO2021149372A1 (ja) * 2020-01-20 2021-07-29 ソニーセミコンダクタソリューションズ株式会社 発光装置およびその製造方法
WO2021166473A1 (ja) * 2020-02-19 2021-08-26 ソニーセミコンダクタソリューションズ株式会社 発光装置およびその製造方法
KR20230037660A (ko) * 2020-08-20 2023-03-16 애플 인크. 통합된 에지-생성 수직 방출 레이저
KR102836755B1 (ko) * 2020-08-20 2025-07-21 애플 인크. 통합된 에지-생성 수직 방출 레이저
JP2023539134A (ja) * 2020-08-20 2023-09-13 アップル インコーポレイテッド 集積型端面生成垂直放出レーザ
JP7536183B2 (ja) 2020-08-20 2024-08-19 アップル インコーポレイテッド 集積型端面生成垂直放出レーザ
WO2022107571A1 (ja) * 2020-11-20 2022-05-27 ソニーセミコンダクタソリューションズ株式会社 発光装置およびその製造方法
WO2022176434A1 (ja) * 2021-02-22 2022-08-25 ソニーグループ株式会社 レーザ素子、レーザ素子アレイ及びレーザ素子の製造方法
JPWO2022176434A1 (enExample) * 2021-02-22 2022-08-25
WO2023145271A1 (ja) * 2022-01-27 2023-08-03 ソニーグループ株式会社 面発光素子、光源装置及び面発光素子の製造方法

Also Published As

Publication number Publication date
CN103181040B (zh) 2016-04-27
EP2636111A1 (en) 2013-09-11
US20130223466A1 (en) 2013-08-29
EP2636111B1 (en) 2020-05-06
WO2012059864A1 (en) 2012-05-10
US9112330B2 (en) 2015-08-18
EP2636111B8 (en) 2020-08-19
CN103181040A (zh) 2013-06-26

Similar Documents

Publication Publication Date Title
US9112330B2 (en) Optical element for vertical external-cavity surface-emitting laser
JP6154460B2 (ja) 光学的にポンピングされる外部共振器型垂直面発光レーザーデバイス
JP2015518282A5 (enExample)
US8023547B2 (en) Vertical extended cavity surface emission laser and method for manufacturing a light emitting component of the same
US11749967B2 (en) Laser diode and method for manufacturing a laser diode
US6259713B1 (en) Laser beam coupler, shaper and collimator device
JP7582204B2 (ja) 垂直共振器型面発光レーザ素子の製造方法、垂直共振器型面発光レーザ素子アレイの製造方法及び垂直共振器型面発光レーザモジュールの製造方法
US20190386464A1 (en) Opto-electronic device having a backside illuminating vcsel array with integrated diffractive optical elements (doe), diffuser and/or lens
JP2007194597A (ja) 外部共振器型の面発光レーザ
JP7627364B2 (ja) 光電子半導体チップ及び構成要素
CN115516721A (zh) 折叠的光学共轭透镜
US12119610B2 (en) Top-emitting vertical-cavity surface-emitting laser with bottom-emitting structure
US11621542B2 (en) Microsystems and semiconductor hybrid coherent light sources
CN219917900U (zh) 一种具有晶圆级集成光学微透镜的垂直光腔面发射激光器
US11949211B2 (en) Broadband active mirror architecture for high power optically pumped semiconductor disk lasers
JP2012098756A (ja) 光路変換体及びその実装構造並びに光モジュール
US20250350090A1 (en) Hybrid membrane external-cavity surface emitting laser
US20240039245A1 (en) Optoelectronic device
JP2024086696A (ja) 赤緑青垂直キャビティ面発光レーザアレイ
CN101627513A (zh) 具有聚合物光导的激光器和监测光电检测器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141031

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141031

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150617

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150623

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160405

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160704

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20161027

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170214