CN103181040B - 用于垂直外部腔体表面发射激光器的光学元件 - Google Patents
用于垂直外部腔体表面发射激光器的光学元件 Download PDFInfo
- Publication number
- CN103181040B CN103181040B CN201180053163.0A CN201180053163A CN103181040B CN 103181040 B CN103181040 B CN 103181040B CN 201180053163 A CN201180053163 A CN 201180053163A CN 103181040 B CN103181040 B CN 103181040B
- Authority
- CN
- China
- Prior art keywords
- optical
- vecsel
- substrate
- mirror
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
- G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Microscoopes, Condenser (AREA)
- Optical Elements Other Than Lenses (AREA)
- Lenses (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10189788.2 | 2010-11-03 | ||
| EP10189788 | 2010-11-03 | ||
| PCT/IB2011/054850 WO2012059864A1 (en) | 2010-11-03 | 2011-11-01 | Optical element for vertical external-cavity surface-emitting laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103181040A CN103181040A (zh) | 2013-06-26 |
| CN103181040B true CN103181040B (zh) | 2016-04-27 |
Family
ID=45370528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180053163.0A Expired - Fee Related CN103181040B (zh) | 2010-11-03 | 2011-11-01 | 用于垂直外部腔体表面发射激光器的光学元件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9112330B2 (enExample) |
| EP (1) | EP2636111B8 (enExample) |
| JP (1) | JP2013541854A (enExample) |
| CN (1) | CN103181040B (enExample) |
| WO (1) | WO2012059864A1 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2013230056A1 (en) * | 2012-03-05 | 2014-09-18 | Nanoprecision Products, Inc. | Coupling device having a structured reflective surface for coupling input/output of an optical fiber |
| CN103412406B (zh) * | 2013-07-30 | 2015-12-09 | 中国科学院半导体研究所 | 一种用于激光显示的红光半导体面阵光源装置 |
| JP2015219422A (ja) * | 2014-05-19 | 2015-12-07 | Nltテクノロジー株式会社 | 光学部材及び表示装置 |
| US10177527B2 (en) | 2015-05-28 | 2019-01-08 | Vixar Inc. | VCSELS and VCSEL arrays designed for improved performance as illumination sources and sensors |
| US10630053B2 (en) | 2015-07-30 | 2020-04-21 | Optipulse Inc. | High power laser grid structure |
| CN108141005B (zh) | 2015-07-30 | 2021-08-10 | 奥普蒂脉冲公司 | 刚性高功率和高速激光网格结构 |
| WO2017027864A1 (en) | 2015-08-12 | 2017-02-16 | Nanoprecision Products, Inc. | Multiplexer/demultiplexer using stamped optical bench with micro mirrors |
| US9880366B2 (en) | 2015-10-23 | 2018-01-30 | Nanoprecision Products, Inc. | Hermetic optical subassembly |
| DE102017105997A1 (de) | 2017-03-21 | 2018-09-27 | Valeo Schalter Und Sensoren Gmbh | Sendeeinrichtung für eine optische Erfassungseinrichtung eines Kraftfahrzeugs mit einem spezifischen Vormontagemodul, optische Erfassungseinrichtung sowie Kraftfahrzeug |
| EP3607622A4 (en) * | 2017-04-05 | 2021-01-06 | Vixar Inc. | NEW VCSEL CONFIGURATION FOR DISPLAYS, DETECTION AND IMAGING |
| EP3633807B1 (en) | 2017-05-31 | 2021-12-29 | Sony Group Corporation | Light-emitting element and light-emitting element manufacturing method |
| DE102017112235A1 (de) * | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Laserdiode und Verfahren zum Herstellen einer Laserdiode |
| DE112018003684T5 (de) * | 2017-07-18 | 2020-05-14 | Sony Corporation | Lichtemittierendes element und array aus lichtemittierenden elementen |
| CA3072769A1 (en) | 2017-08-11 | 2019-02-14 | Optipulse Inc. | Laser grid structures for wireless high speed data transfers |
| CA3072763A1 (en) * | 2017-08-11 | 2019-02-14 | Optipulse Inc. | High power laser grid structure |
| CN111226360B (zh) | 2017-08-14 | 2021-08-24 | 朗美通经营有限责任公司 | 表面贴装的兼容的vcsel阵列 |
| US10374705B2 (en) | 2017-09-06 | 2019-08-06 | Optipulse Inc. | Method and apparatus for alignment of a line-of-sight communications link |
| DE102017122325A1 (de) | 2017-09-26 | 2019-03-28 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen |
| EP3688422B1 (en) | 2017-09-29 | 2024-05-15 | Apple Inc. | Connected epitaxial optical sensing systems |
| CN108490633A (zh) * | 2018-03-12 | 2018-09-04 | 广东欧珀移动通信有限公司 | 结构光投射器、深度相机和电子设备 |
| CN108303757B (zh) * | 2018-03-12 | 2020-07-10 | Oppo广东移动通信有限公司 | 激光投射模组、深度相机和电子装置 |
| US10897122B2 (en) * | 2018-04-20 | 2021-01-19 | Hewlett Packard Enterprise Development Lp | Optical apparatus for optical transceivers |
| US11303355B2 (en) | 2018-05-30 | 2022-04-12 | Apple Inc. | Optical structures in directional free-space optical communication systems for portable electronic devices |
| EP3598591A1 (en) * | 2018-07-17 | 2020-01-22 | Koninklijke Philips N.V. | Laser arrangement with reduced building height |
| US11178392B2 (en) * | 2018-09-12 | 2021-11-16 | Apple Inc. | Integrated optical emitters and applications thereof |
| CN109346922B (zh) * | 2018-11-29 | 2020-11-17 | 西安工业大学 | 一种输出均匀偏振光的微型激光器及其制备方法 |
| DE102018130562A1 (de) * | 2018-11-30 | 2020-06-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiter-bauelement mit stromverteilungsschicht und verfahren zur herstellung des optoelektronischen halbleiter-bauelements |
| WO2020163139A2 (en) * | 2019-02-04 | 2020-08-13 | Apple Inc. | Vertical emitters with integral microlenses |
| DE112020002694B4 (de) * | 2019-06-04 | 2024-11-28 | Sony Group Corporation | Lichtemittierendes element und verfahren zum herstellen eines arrays aus lichtemittierenden elementen |
| US11549799B2 (en) | 2019-07-01 | 2023-01-10 | Apple Inc. | Self-mixing interference device for sensing applications |
| JP2021114556A (ja) * | 2020-01-20 | 2021-08-05 | ソニーセミコンダクタソリューションズ株式会社 | 発光装置およびその製造方法 |
| JP2023037044A (ja) * | 2020-02-19 | 2023-03-15 | ソニーセミコンダクタソリューションズ株式会社 | 発光装置およびその製造方法 |
| CN115516721A (zh) | 2020-05-10 | 2022-12-23 | 苹果公司 | 折叠的光学共轭透镜 |
| KR102836755B1 (ko) * | 2020-08-20 | 2025-07-21 | 애플 인크. | 통합된 에지-생성 수직 방출 레이저 |
| US12372724B2 (en) | 2020-09-23 | 2025-07-29 | Apple Inc. | Light splitting device |
| JP2024004502A (ja) * | 2020-11-20 | 2024-01-17 | ソニーセミコンダクタソリューションズ株式会社 | 発光装置およびその製造方法 |
| US11994694B2 (en) | 2021-01-17 | 2024-05-28 | Apple Inc. | Microlens array with tailored sag profile |
| US20240120711A1 (en) * | 2021-02-22 | 2024-04-11 | Sony Group Corporation | Laser device, laser device array, and method of producing a laser device |
| CN115117735A (zh) * | 2021-03-17 | 2022-09-27 | 上海禾赛科技有限公司 | 激光器、光源模组及激光雷达 |
| US12413043B2 (en) | 2021-09-21 | 2025-09-09 | Apple Inc. | Self-mixing interference device with tunable microelectromechanical system |
| WO2023145271A1 (ja) * | 2022-01-27 | 2023-08-03 | ソニーグループ株式会社 | 面発光素子、光源装置及び面発光素子の製造方法 |
| US20240088629A1 (en) * | 2022-09-13 | 2024-03-14 | Ii-Vi Delaware, Inc. | Micro-optics on vcsel-based flood illuminator |
| DE102023133477A1 (de) * | 2023-11-30 | 2025-06-05 | Trumpf Photonic Components Gmbh | VCSEL und Verfahren zum Herstellen eines VCSEL |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1448000A (zh) * | 2000-07-12 | 2003-10-08 | 普林斯顿光电子学公司 | 用于半导体激光器泵浦的固体激光器系统中的具有集成微透镜的vcsel及vcsel阵列 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08321660A (ja) * | 1995-05-25 | 1996-12-03 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
| US6026111A (en) * | 1997-10-28 | 2000-02-15 | Motorola, Inc. | Vertical cavity surface emitting laser device having an extended cavity |
| JP3618655B2 (ja) | 2000-09-12 | 2005-02-09 | 株式会社西建設 | 蓄熱式電気暖房装置を用いた暖房方法 |
| JP4437376B2 (ja) * | 2001-03-27 | 2010-03-24 | 株式会社リコー | 面発光レーザ素子の製造方法 |
| FR2824188B1 (fr) * | 2001-04-25 | 2003-12-12 | Commissariat Energie Atomique | Dispositif optique comportant une pluralite de cavites resonantes de longueurs differentes associees a differentes longueurs d'ondes |
| JP2003060299A (ja) * | 2001-06-07 | 2003-02-28 | Ricoh Opt Ind Co Ltd | 光出力素子・光出力素子アレイおよびレンズ素子・レンズ素子アレイ |
| US20060165144A1 (en) * | 2002-09-02 | 2006-07-27 | Aleksei Mikhailov | Semiconductor laser device |
| US7502392B2 (en) * | 2003-09-12 | 2009-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser oscillator |
| US7449724B2 (en) * | 2003-09-12 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7260135B2 (en) * | 2003-09-26 | 2007-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2006066538A (ja) | 2004-08-25 | 2006-03-09 | Hamamatsu Photonics Kk | 面発光レーザ光源の製造方法及び面発光レーザ光源 |
| US20070002922A1 (en) | 2005-06-30 | 2007-01-04 | Intel Corporation | Retro-reflecting lens for external cavity optics |
| WO2007044711A1 (en) | 2005-10-07 | 2007-04-19 | University Of Florida Research Foundation, Inc. | Multiple component nanoparticles for multiplexed signaling and optical encoding |
| EP1793269B1 (de) * | 2005-12-01 | 2011-04-27 | LIMO Patentverwaltung GmbH & Co. KG | Vorrichtung zur Beeinflussung von Licht |
| WO2008012767A2 (en) | 2006-07-26 | 2008-01-31 | Ecole Polytechnique Federale De Lausanne (Epfl) | Miniaturized optical tweezers based on high-na micro-mirrors |
| KR100811032B1 (ko) * | 2006-10-17 | 2008-03-06 | 삼성전기주식회사 | 모노리틱 조명장치 |
| US7786808B2 (en) | 2007-01-31 | 2010-08-31 | Teledyne Scientific & Imaging, Llc | Micro-structured optic apparatus |
| WO2008150934A1 (en) | 2007-05-29 | 2008-12-11 | University Of Utah Research Foundation | Micro-lens arrays and curved surface fabrication techniques |
| KR101338354B1 (ko) | 2007-12-28 | 2013-12-16 | 광주과학기술원 | 마이크로렌즈의 제조방법 |
| IT1391530B1 (it) | 2008-07-31 | 2012-01-11 | Cyanagen S R L | Particelle attive per applicazioni bio-analitiche e metodi per la loro preparazione |
| WO2010013136A2 (en) | 2008-07-31 | 2010-02-04 | Alma Mater Studiorum - Universita' Di Bologna | Active particles for bio-analytical applications and methods for their preparation |
| CN102246367B (zh) | 2008-12-10 | 2013-05-29 | 皇家飞利浦电子股份有限公司 | 具有改进的空间模式的高功率vcsel |
| US8111730B2 (en) * | 2009-08-20 | 2012-02-07 | International Business Machines Corporation | 3D optoelectronic packaging |
-
2011
- 2011-11-01 WO PCT/IB2011/054850 patent/WO2012059864A1/en not_active Ceased
- 2011-11-01 JP JP2013537237A patent/JP2013541854A/ja active Pending
- 2011-11-01 CN CN201180053163.0A patent/CN103181040B/zh not_active Expired - Fee Related
- 2011-11-01 EP EP11797357.8A patent/EP2636111B8/en active Active
- 2011-11-01 US US13/882,998 patent/US9112330B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1448000A (zh) * | 2000-07-12 | 2003-10-08 | 普林斯顿光电子学公司 | 用于半导体激光器泵浦的固体激光器系统中的具有集成微透镜的vcsel及vcsel阵列 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130223466A1 (en) | 2013-08-29 |
| JP2013541854A (ja) | 2013-11-14 |
| US9112330B2 (en) | 2015-08-18 |
| EP2636111B8 (en) | 2020-08-19 |
| WO2012059864A1 (en) | 2012-05-10 |
| EP2636111B1 (en) | 2020-05-06 |
| CN103181040A (zh) | 2013-06-26 |
| EP2636111A1 (en) | 2013-09-11 |
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Address after: Eindhoven, Netherlands Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
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Effective date of registration: 20200709 Address after: Ulm Patentee after: Tongkuai optoelectronic device Co.,Ltd. Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS N.V. |
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