WO2012059864A1 - Optical element for vertical external-cavity surface-emitting laser - Google Patents

Optical element for vertical external-cavity surface-emitting laser Download PDF

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Publication number
WO2012059864A1
WO2012059864A1 PCT/IB2011/054850 IB2011054850W WO2012059864A1 WO 2012059864 A1 WO2012059864 A1 WO 2012059864A1 IB 2011054850 W IB2011054850 W IB 2011054850W WO 2012059864 A1 WO2012059864 A1 WO 2012059864A1
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WO
WIPO (PCT)
Prior art keywords
vecsel
optical
substrate
mirrors
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2011/054850
Other languages
English (en)
French (fr)
Inventor
Stephan Gronenborn
Holger MÖENCH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Intellectual Property and Standards GmbH, Koninklijke Philips Electronics NV filed Critical Philips Intellectual Property and Standards GmbH
Priority to CN201180053163.0A priority Critical patent/CN103181040B/zh
Priority to JP2013537237A priority patent/JP2013541854A/ja
Priority to US13/882,998 priority patent/US9112330B2/en
Priority to EP11797357.8A priority patent/EP2636111B8/en
Publication of WO2012059864A1 publication Critical patent/WO2012059864A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Definitions

  • the present invention relates to an optical element being formed of a substrate, which is transparent at least in a wavelength region of optical radiation, a first interface of said substrate comprising one or several curved regions forming part of an optical lens or of an array of optical lenses integrated in said substrate.
  • the invention also refers to a vertical external-cavity surface-emitting laser (VECSEL) with such an optical element arranged at an emission side of the laser.
  • VECSEL vertical external-cavity surface-emitting laser
  • VECSELs are one of the most promising high brightness laser sources and offer many advantages compared to edge emitters, like addressable 2D-array arrangements and circular beam shapes.
  • the external cavity is composed of macroscopic optical elements, which are very bulky and need sophisticated adjustment.
  • the external cavity of the VECSEL is defined by a spherical mirror on an optically transparent substrate bonded on the semiconductor wafer.
  • several VECSELs can be arranged in an array. For thermal reasons, many small devices are more suited than few large devices.
  • a small active diameter and therefore small beam waist means a high divergence angle, reducing the brightness of such an array.
  • a microlens array can be used collimating the radiation of each VECSEL and thus lowering the beam parameter product and increasing the brightness of the VECSEL array. But an additional adjustment step is necessary for this lens array, either on chip-level or on wafer level, if stacked optical transparent wafers are used.
  • An creme of the present invention is to provide means for fabricating a VECSEL or VECSEL array which increase the brightness of the VECSEL without the requirement of an additional adjustment step during fabrication.
  • Claim 6 describes a VECSEL (array) comprising such an optical element.
  • the proposed optical element is formed of a substrate, which is transparent at least in a wavelength region within the wavelenth range of optical radiation.
  • optical radiation means electromagnetic radiation in the infrared (IR), visible (VIS) and ultraviolett (UV) wavelength range.
  • the substrate has to be transparent only in a wavelength region, in which the corresponding VECSEL for which the optical element is designed, emitts laser radiation.
  • a first interface of the substrate comprises one or several curved regions forming part of an optical lens (in case of one curved region) or of an array of optical lenses, in particular micro-lenses, integrated in the substrate.
  • the substrate further comprises one or several optical mirrors formed on a second interface of the substrate opposing the first interface or embedded in the substrate in a plane substantially parallel to the first interface.
  • the one or several optical mirrors are arranged and designed to back reflect a fraction of optical radiation in said wavelength region incident on the first or second interface.
  • the arrangement is such that optical radiation in said wavelength region incident at an angle of 90° will be back reflected by the corresponding optical mirror partly, whereas the remaining portion passes the lens formed behind the mirror in the substrate.
  • the reflectivity of the mirror is preferably between 30% and 99.5% in the desired wavelength region.
  • the one or several optical mirrors are flat mirrors or curved mirrors having a radius of curvature different from the radius of curvature of the one or several curved regions forming the optical lenses.
  • the laser radiation passing through the mirrors can be collimated by the optical lenses and thus allow a higher brightness of the VECSELs.
  • the invention thus suggests using a combination of the external mirror of a VECSEL and a collimation lens on a single substrate, preferably a glass substrate.
  • a single substrate preferably a glass substrate.
  • Such an optical element can be fabricated, for example in the following manner.
  • micro- lenses in particular spherical micro-lenses, are formed on the substrate e.g. by glass moulding, UV-moulding or RIE-transfer (RIE: Reactive Ion Etching).
  • RIE Reactive Ion Etching
  • a reflective coating is applied on the lenses, the surfaces of which will then serve as the external micro-mirrors of the VECSELs.
  • the reflective coating may also cover only a fraction of the surface, i.e. may be patterned. This is may serve to backreflect only special angular regions of the radiation, e.g.
  • spherical or aspherical micro-lenses with a different radius of curvature are formed on top of the first micro-lenses, i.e. on top of the micro -mirrors.
  • the ROC of surface of this further micro-lenses is chosen such that the light coming from the VECSEL through the micro-mirrors will be collimated.
  • Such an optical element does not require an additional adjustment step for the micro-lenses during fabrication of a VECSEL. Therefore, the fabrication process is simplified.
  • the optical element comprises an array of micro-lenses and micro-mirrors which can be used in a VECSEL-array, for example on wafer.
  • the optical element can be applied with different techniques to the substrate (carrier substrate) which carries the semiconductor components of the VECSEL .
  • the optical element may for example be bonded, glued or soldered to this carrier substrate, e.g. a semiconductor substrate, or to the layer stacks forming the semiconductor components of the VECSELs.
  • the VECSEL for example may comprise an optical gain medium arranged between a first DBR (Distributed Bragg Reflector) and a second DBR. Both DBR form the internal laser cavity.
  • the second DBR is partially transparent for laser radiation resonating in the laser cavity .
  • the second DBR may have a reflectivity that does not allow lasing between the first DBR and the second DBR without the external mirror, or may also have a reflecitvity which allows lasing in the internal laser cavity without the external mirror
  • the DBRs and the gain medium may be formed in a known manner from appropriately designed layer stacks on a semiconductor substrate, in particular a GaAs-substrate.
  • the optical element forming the external mirror is then attached to this substrate, which must be optically transparent for the generated laser radiation in this case.
  • the electrical connections necessary for operating the VECSEL can also be formed in the known manner.
  • spacers mounted on the surface of the carrier substrate or next to the lasers to which spacers the optical element is then attached may also first be applied to the surface of the optical element or may be integrated in this surface during fabrication of the optical element. In such an embodiment, an air gap remains between the surface of the optical element and the layer stack.
  • a transparent spacer layer may be applied between the optical element and the carrier substrate.
  • Such a layer may also already be formed on the surface of the optical element during fabrication of this element.
  • the optical element in case of a epitaxy-side emitting VECSEL or a VECSEL with removed carrier substrate, may also be applied to the second DBR or to another structure of the underlying VECSEL stack, for example to an intermediate layer, or - when omitting the second DBR - on a layer on the active region.
  • the layer stack of the VECSEL can be made in different manners as already known in the art.
  • the mirrors of the optical element are curved mirrors, in particular concave mirrors, and the radius of curvature of the curved regions on the first interface of the optical element forming the micro-lenses are selected to collimate the laser radiation being emitted by the VECSEL.
  • the ROC of the mirrors is larger than the ROC of the curved regions of the micro-lenses. Nevertheless, the micro-lenses may also be designed to achieve another beam forming effect.
  • Fig. 1 a first example of the optical element mounted on a VECSEL array compared with solutions of the prior art
  • Fig. 2 a second example of the proposed optical element
  • Fig. 3 an example of a VECSEL array with the proposed optical element
  • Fig. 4 a further example of a VECSEL array with proposed optical element.
  • Figure 1 shows a comparison of an embodiment of a VECSEL array with the optical element of the present invention compared with solutions of the prior art.
  • Figur 1 A depicts a VECSEL array of the prior art in which the external mirrors are formed on an optically transparent substrate 200 which is attached to the optically transparent carrier substrate 120 on which the semiconductor layer stack 110 of the VECSELs is bonded or grown.
  • This construction is similar to a so called backside or bottom emitting VCSEL which emits the laser radiation through the carrier substrate.
  • the external mirrors on substrate 200 are formed by processing the surface to a spherical (or aspherical) shape (mirror surface 210) and coating a reflective layer on this surface.
  • the radius of curvature (ROC) of the resulting curved regions of the surface fulfill the condition ROC > L, L being the distance of these external concave mirrors to the gain region of the VECSEL.
  • micro-lenses In the field of VCSELs it is known to use an array of micro-lenses in order to collimate the laser emission of the VCSELs 111 of such an array. These micro-lenses are formed in an optically transparent substrate 200, the surface of which is processed surface to a spherical (or aspherical) shape (lens surface 220) to provide curved regions forming part of the micro-lenses, as shown in figure IB..
  • FIG. 1C shows an example of the proposed VECSEL array with integrated optical element according to the present invention.
  • the optical element comprises an optically transparent substrate 200 with integrated micro-mirrors, which are formed by a spherical (or aspherical) shaped surface (mirror surface 210) having a reflective coating, and with integrated micro-lenses formed on top of the micro-mirrors by the spherical (or aspherical) shape of the substrate surface (lens surface 220).
  • a surface of a substrate 200 is processed to have several curved regions with a spherical or aspherical shape (mirror surface 210).
  • the substrate is made of an appropriate material optically transparent in the desired wavelength region, for example made of glass, gallium arsenide, silicon etc.
  • the spherical shape of the mirror surface 210 can be achieved by e.g. glass moulding, RIE transfer, machining or hot embossing. It is also possible to apply a different material on the substrate and to form this different material to the desired shape, e.g. by UV replication or by deposition of a polymer with a jet process.
  • the ROC of the spherical shape of the mirror surface 210 is selected to act as a spherical mirror forming one of the end mirrors of the laser cavity of a VECSEL having the gain medium at a distance L.
  • the ROC of this external spherical mirror is larger than L, preferably around 2L.
  • a reflective coating is applied on the mirror surface 210 to provide the desired reflectivity R, which is typically between 30% and 99.5% in the desired wavelength region.
  • material optically transparent in said wavelength region is deposited on the mirror surface 210 (i.e. on the coating of the mirror surface 210) and shaped to a spherical lens surface 220 with a different ROC smaller than the ROC of the mirror surface 210.
  • the exact ROC of the lens surface 220 is determined by the collimation condition and is approximately L/2 for a refractive index of its material of around 1.5.
  • the lens surface can also have an aspherical shape to minimize aberrations, like it is well known for all lenses.
  • the lens surface 220 can be antireflection coated to optimize the performance of the optical element.
  • semiconductor layer stack 110 of the VECSEL may be designed as already known in the art.
  • the semiconductor layer stack is arranged on an optically transparent carrier substrate 120 like in the case of substrate-side emitting VCSELs and the optical element is attached to this carrier substrate.
  • the layer stack may also be grown or mounted on a carrier substrate arranged at the opposite side of the layer stack.
  • the optical element is then attached directy or via one or several intermediate layers or spacers to the layer stack.
  • the optical element can also be mounted on spacers placed next to the lasers, e.g. on the submount or the heat sink or, if the carrier substrate is removed, directly on the epitaxial layer stack.
  • the material of the collimation lenses formed between the mirror surface 210 and the lens surface 220 can be different from the material of the substrate 200 or the material from which the mirrors are formed.
  • An advantageous embodiment comprises a moulded glass wafer for forming the substrate 200 and the mirror surfaces 210 and a polymer material on top of the reflective coating for forming the micro-lens surfaces 220. Allthough the mirror surfaces 210 are shown to have a concave form, the mirrors can also be flat mirrors in all of the embodiments of the present invention. In such a case, lens surface 220 is the only curved surface of the optical element.
  • the mirrors can also be formed on one interface of the substrate 200 by an appropriate mirror coating and, if applicable, by an appropriate shaping of this interface or side.
  • Figure 2 shows concave mirror surfaces 211 which are formed on the interface opposing the interface with the spherical surfaces 220 of the micro-lenses. Nevertheless, the mirrors 211 may also be formed as flat mirrors by applying a reflective coating to a flat interface of the substrate 200.
  • FIG 3 shows an embodiment of a VECSEL array of the present invention, in which the optical element with the micro-mirrors (mirror surface 211) and micro-lenses (lens surface 220) are attached to the VECSEL carrier substrate 120 via spacer structures 310.
  • Figure 4 shows such an embodiment, in which instead of the spacer structures 310 a transparent spacer layer 311 is arranged between the optical element and the carrier substrate 120 carriying the semiconductor layer stacks 110 of the VECSELs.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Microscoopes, Condenser (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Lenses (AREA)
PCT/IB2011/054850 2010-11-03 2011-11-01 Optical element for vertical external-cavity surface-emitting laser Ceased WO2012059864A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201180053163.0A CN103181040B (zh) 2010-11-03 2011-11-01 用于垂直外部腔体表面发射激光器的光学元件
JP2013537237A JP2013541854A (ja) 2010-11-03 2011-11-01 垂直外部キャビティ面発光レーザに対する光学素子
US13/882,998 US9112330B2 (en) 2010-11-03 2011-11-01 Optical element for vertical external-cavity surface-emitting laser
EP11797357.8A EP2636111B8 (en) 2010-11-03 2011-11-01 Optical element for vertical external-cavity surface-emitting laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10189788.2 2010-11-03
EP10189788 2010-11-03

Publications (1)

Publication Number Publication Date
WO2012059864A1 true WO2012059864A1 (en) 2012-05-10

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PCT/IB2011/054850 Ceased WO2012059864A1 (en) 2010-11-03 2011-11-01 Optical element for vertical external-cavity surface-emitting laser

Country Status (5)

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US (1) US9112330B2 (enExample)
EP (1) EP2636111B8 (enExample)
JP (1) JP2013541854A (enExample)
CN (1) CN103181040B (enExample)
WO (1) WO2012059864A1 (enExample)

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